JPH0330981B2 - - Google Patents

Info

Publication number
JPH0330981B2
JPH0330981B2 JP21810184A JP21810184A JPH0330981B2 JP H0330981 B2 JPH0330981 B2 JP H0330981B2 JP 21810184 A JP21810184 A JP 21810184A JP 21810184 A JP21810184 A JP 21810184A JP H0330981 B2 JPH0330981 B2 JP H0330981B2
Authority
JP
Japan
Prior art keywords
decomposition
semiconductor thin
hydrofluoric acid
thin film
decomposition liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21810184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6196736A (ja
Inventor
Ayako Shimazaki
Rie Yamayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP21810184A priority Critical patent/JPS6196736A/ja
Publication of JPS6196736A publication Critical patent/JPS6196736A/ja
Publication of JPH0330981B2 publication Critical patent/JPH0330981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP21810184A 1984-10-17 1984-10-17 半導体薄膜の分解装置 Granted JPS6196736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21810184A JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21810184A JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Publications (2)

Publication Number Publication Date
JPS6196736A JPS6196736A (ja) 1986-05-15
JPH0330981B2 true JPH0330981B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-05-01

Family

ID=16714646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21810184A Granted JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Country Status (1)

Country Link
JP (1) JPS6196736A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2909086B2 (ja) * 1989-01-20 1999-06-23 株式会社東芝 半導体基板表面の不純物回収方法及び装置
JP4516379B2 (ja) * 2004-08-18 2010-08-04 Sumco Techxiv株式会社 処理装置
JP4769439B2 (ja) * 2004-08-18 2011-09-07 Sumco Techxiv株式会社 処理装置
JP4769440B2 (ja) * 2004-08-18 2011-09-07 Sumco Techxiv株式会社 処理装置

Also Published As

Publication number Publication date
JPS6196736A (ja) 1986-05-15

Similar Documents

Publication Publication Date Title
Buttner et al. Adsorption of oxygen on silver
Siegel et al. X-ray diffraction studies of some transition metal hexafluorides
Flanagan et al. Electrode potentials of the palladium+ hydrogen system
Fawcett The surface resistance of normal and superconducting tin at 36 kMc/s
US4584886A (en) Resolution device for semiconductor thin films
JPH0330981B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Friis et al. Magnesium: Comparison of density functional theory calculations with electron and x-ray diffraction experiments
Peterson et al. The Strontium-Strontium Hydride Phase System1
Quist et al. ICE VIII—AN ACETONE HYDRATE?
Osborne et al. Heat Capacity and Other Thermodynamic Properties of MoF6 between 4 and 350 K
Bergner et al. Diffusion of foreign elements in aluminum solid solutions. Pt. 3. Investigations into the diffusion of silicon in aluminum using the microprobe
Daunt et al. XXVII. Absorption of infra-red light in supraconductors
Fischer et al. Liquid-vapor equilibriums and thermodynamics of lithium-tin system
Addison et al. 19. Liquid metals. Part X. Solutions of hydrogen in liquid sodium
CN218674921U (zh) 一种前驱体合成过程中pH和固含量便携式测量装置
Snyder et al. Bulk density of separated lithium isotopes
Holleck et al. The Activity Coefficient of Lithium Chloride in Anhydrous Dimethyl Sulfoxide Solutions
JPH0566727B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Addison et al. Reaction of nitrogen with stirred and unstirred liquid lithium
Mousa et al. NMR investigations of cation diffusion in some solids with antifluorite structure
Thomas Total mixing ratios
JPH0543289B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Ito Rotational correlation times of a nitroxide spin probe in low temperature matrices determined by saturation transfer ESR: their correlation to dynamic behavior of radiation products
Luz et al. The Acid-Catalyzed Oxygen Exchange of Acetylacetone in Dioxane—Water Solutions Measured by Oxygen-17 Nuclear Magnetic Resonance
JPS6247551A (ja) 半導体基板の薄膜分解方法及び装置