JPH0330410A - Manufacture of aluminum electrode for electrolytic capacitor - Google Patents
Manufacture of aluminum electrode for electrolytic capacitorInfo
- Publication number
- JPH0330410A JPH0330410A JP16576989A JP16576989A JPH0330410A JP H0330410 A JPH0330410 A JP H0330410A JP 16576989 A JP16576989 A JP 16576989A JP 16576989 A JP16576989 A JP 16576989A JP H0330410 A JPH0330410 A JP H0330410A
- Authority
- JP
- Japan
- Prior art keywords
- arc
- vapor
- cathode
- target
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000003990 capacitor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 20
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 238000007740 vapor deposition Methods 0.000 abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 5
- 239000013077 target material Substances 0.000 abstract description 5
- 238000010891 electric arc Methods 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
この発明は電解コンデンサに用いられるアルミニウム電
極の製造方法に関し、さらに詳しくは陰極用電極に用い
られる高純度アルミニウムの表面に蒸着によって白金層
を形成させるアルミニウム電極の製造方法に関する。The present invention relates to a method for manufacturing an aluminum electrode used in an electrolytic capacitor, and more particularly to a method for manufacturing an aluminum electrode in which a platinum layer is formed by vapor deposition on the surface of high-purity aluminum used for a cathode electrode.
電解コンデンサは、小型、大容量、安価で整流出力の平
滑用などの用途に優れた特性を示し、各種の電気・電子
機器の重要な構成要素の一つである。
電解コンデンサは、一般にアルミニウム等の絶縁性酸化
皮膜が形成され得る、いわゆる弁金属を陽極に用い、前
記絶縁性酸化皮膜を誘電体層として、集電用の陰極電極
との間に電解液を介在させて作成される。
陽極材料は前述したように、アルミニウムをはじめ、タ
ンタル、ニオブ、チタンなどが使用される。また集電の
ための陰極電極材料には、陽極材料と同種の金属が用い
られる。
ところが、弁金属は一般に自然酸化による酸化皮膜層が
表面に形成される。この傾向はアルミニウムにおいて特
に顕著である。そしてこの自然酸化皮膜は極めて薄い絶
縁層のため、陰極側にも静電容量が形成され、電解コン
デンサは陽極側の静電容量および、陰極側の静電容量が
直列に接続された合成容量となり、所望の静電容量が得
られない場合がある。また所望の静電容量を得るため、
陽極側の静電容量を必要以上に大きく設定する必要があ
る。
これの影響を少なくするためには、陽極側の静電容量値
に比べ陰極側の静電容量値を著しく高くすれば、陰極側
の静電容量による影響は殆ど無視できることになるが、
低電圧用の電解コンデンサの陽極はの単位面積あたりの
静電容量は相当に高く合成容量による静電容量値の低下
は免れ得ない。
そこで陰極側の静電容量値をより高くするために、陰極
電極表面をエツチング処理して表面積を拡大する方法が
ある。しかしこの表面積を拡大する技術は、現在では高
度に洗練されているが、この技術のみによって電解コン
デンサの静電容量を増加させるのは次第に困難になりつ
つある。
むしろ陰極との合成容量による静電容量の低下の問題は
、少なくとも陰極の表面部に自然酸化皮膜が形成されな
い形態をとるのが望ましい。
このためには、陰極材料に弁金属以外の金属を用いれば
、絶縁性の酸化皮膜が形成されない。しかし、電解コン
デンサは内部に電解液が含浸されており、電解液との反
応によって腐食等の不都合が発生することから、陰極材
料として弁金属以外には白金、金、パラジウム等の安定
性の高い貴金属に限られる。しかしこれら貴金属を集電
用の陰極としてそのまま用いることは、経済的理由ゆえ
、まず不可能である。
そこでこれを解決する手段として、アルミニウムの表面
に、これら貴金属を付着または溶着させることが考えら
れている（例えば特開昭６０４８２６号公報）。このよ
うな手段としては、例えば真空蒸着法、イオンブレーテ
ィング法またはスバ・ンタリング法のような物理的方法
により、アルミニウム表面に所望の蒸着金属層を形成す
ることで、電解コンデンサの静電容量を増加させること
ができる。
しかしながら前述した方法では、アルミニウム表面にお
ける白金等の金属の蒸着膜の密着性は必ずしも十分では
なく、特に蒸着技術を改良してより優れた電解コンデン
サ用アルミニウム陰極電極を製造する余地が残されてい
た。
また前記した蒸着技術を用いる方法では、処理時間が長
くかかるため、生産効率の点でも不十分であった。Electrolytic capacitors are small, large-capacitance, inexpensive, and have excellent characteristics for applications such as smoothing rectified output, and are one of the important components of various electrical and electronic devices. Electrolytic capacitors generally use a so-called valve metal such as aluminum on which an insulating oxide film can be formed as an anode, and an electrolyte is interposed between the insulating oxide film as a dielectric layer and a cathode electrode for current collection. It is created by As mentioned above, the anode materials used include aluminum, tantalum, niobium, and titanium. Further, the same type of metal as the anode material is used for the cathode electrode material for current collection. However, valve metals generally have an oxide film layer formed on their surfaces due to natural oxidation. This tendency is particularly noticeable in aluminum. Since this natural oxide film is an extremely thin insulating layer, capacitance is also formed on the cathode side, and an electrolytic capacitor is a composite capacitance in which the capacitance on the anode side and the capacitance on the cathode side are connected in series. , the desired capacitance may not be obtained. Also, in order to obtain the desired capacitance,
It is necessary to set the capacitance on the anode side to be larger than necessary. In order to reduce this effect, if the capacitance value on the cathode side is made significantly higher than the capacitance value on the anode side, the effect of the capacitance on the cathode side can be almost ignored.
The capacitance per unit area of the anode of a low-voltage electrolytic capacitor is quite high, and the capacitance value inevitably decreases due to the combined capacitance. Therefore, in order to increase the capacitance value on the cathode side, there is a method of enlarging the surface area by etching the surface of the cathode electrode. However, although this technique of increasing surface area is now highly sophisticated, it is becoming increasingly difficult to increase the capacitance of electrolytic capacitors by this technique alone. Rather, to solve the problem of a reduction in capacitance due to the combined capacitance with the cathode, it is preferable to take a form in which no natural oxide film is formed at least on the surface of the cathode. For this purpose, if a metal other than the valve metal is used as the cathode material, an insulating oxide film will not be formed. However, electrolytic capacitors are impregnated with an electrolytic solution, and reactions with the electrolytic solution can cause problems such as corrosion. Limited to precious metals. However, for economic reasons, it is almost impossible to use these noble metals as they are as cathodes for current collection. Therefore, as a means to solve this problem, it has been considered to attach or weld these noble metals to the surface of aluminum (for example, Japanese Patent Laid-Open No. 604826). Such means include forming a desired vapor-deposited metal layer on the aluminum surface by physical methods such as vacuum evaporation, ion-blating, or sputtering, thereby increasing the electrostatic capacitance of the electrolytic capacitor. can be increased. However, with the method described above, the adhesion of the vapor-deposited film of platinum or other metal to the aluminum surface is not necessarily sufficient, and there is still room to improve the vapor-deposition technology to produce better aluminum cathode electrodes for electrolytic capacitors. . Further, the method using the above-mentioned vapor deposition technique requires a long processing time, and therefore is insufficient in terms of production efficiency.
この発明は、高純度アルミニウムの表面に蒸着により白
金を付着させて、表面に白金層の蒸着膜を形成させるこ
とからなる、電解コンデンサ用アルミニウム電掻の製造
方法を改良することにより、蒸着膜の密着性および緻密
性を向上させ、処理時間を大幅に短縮させることを目的
とするとともに、静電容量を増加させ得る電解コンデン
サ用アルミニウム電極を得ることを目的としている。This invention improves the method for manufacturing aluminum electric scrapers for electrolytic capacitors, which involves depositing platinum on the surface of high-purity aluminum by vapor deposition to form a vapor-deposited platinum layer on the surface. The purpose of this invention is to improve adhesion and density, significantly shorten processing time, and to obtain an aluminum electrode for electrolytic capacitors that can increase capacitance.
この発明によれば、電解コンデンサ用アルミニウム電極
を製造するに際し、高純度アルミニウム表面に、陰極ア
ーク蒸着法によって白金の蒸着層を形成することを特徴
とする電解コンデンサ用アルミニウム電極の製造方法が
提供される。
陰極アーク蒸着法は、ターゲット側を陰極とした陰極ア
ーク放電現象を利用して、ターゲット材料を局所的に溶
融蒸発させ、被処理材料表面に蒸着をおこなうもので、
陰極アーク放電の特性として、陰極側（ターゲット）に
非常に小さな陰極輝点を生じ、大きなアーク電流がこの
小さい点に流れ込むことから、陰極点の近傍は極めて高
温に熱せられて、白金等の高融点材料も瞬時に溶融蒸発
させる。
そして溶融蒸発した、ターゲツト材は同時に金属イオン
となり、真空中に放出される。この際バイアス電圧を被
処理材料に印加することにより、この金属イオンは、加
速された反応ガス粒子と共に被処理材料の表面に密着し
、緻密な蒸着Ｉりを生成する。
この発明によれば、被処理材料としては、通常の電解コ
ンデンサの陰極に用いる高純度で箔状あるいは板状のア
ルミニウムを用いる。このアルミニウム表面は、あらか
じめ脱脂処理等にをより表面を清浄化しておく。またア
ルミニウム表面はエツチング処理を施しても良いし、ブ
レーンのままであってもよい。
この発明における、陰極アーク蒸着の好ましい条件とし
ては、真空度については、１０−７ないし１０”３Ｔｏ
ｒｒの圧力でおこなえば好適である。また不活性ガスと
しては、アルゴン、ヘリウム、窒素ガスの雰囲気中でお
こなえばよい。蒸発距離は１００ないし５００Ｍ、ター
ゲットの蒸発速度はｌＸｌ０−３ないしＩ Ｘｌ０−’
ｍｇ／ｃ＋ａ １秒、蒸着量は、１ｘｉｏ−３ないし１
１ｎｇ／ｃ１１１で蒸着をおこなえば好適である。更に
蒸着膜の厚さは、０．００５ないし３μｍ１蒸着時間は
、０．０５分ないし３０分程度である。According to the present invention, there is provided a method for manufacturing an aluminum electrode for an electrolytic capacitor, which comprises forming a deposited layer of platinum on the surface of high-purity aluminum by cathodic arc evaporation. Ru. The cathodic arc evaporation method uses cathodic arc discharge phenomenon with the target side as the cathode to locally melt and evaporate the target material and deposit it on the surface of the material to be processed.
As a characteristic of cathodic arc discharge, a very small cathode bright spot is created on the cathode side (target), and a large arc current flows into this small spot, so the area near the cathode spot is heated to an extremely high temperature, and high-grade materials such as platinum are heated to extremely high temperatures. Melting point materials are also instantly melted and vaporized. The target material that is melted and evaporated simultaneously turns into metal ions and is released into the vacuum. At this time, by applying a bias voltage to the material to be processed, the metal ions, together with the accelerated reaction gas particles, adhere to the surface of the material to be processed, producing a dense vapor deposition layer. According to this invention, the material to be treated is high-purity foil- or plate-shaped aluminum, which is used for the cathode of ordinary electrolytic capacitors. This aluminum surface is cleaned in advance by degreasing or the like. Further, the aluminum surface may be subjected to an etching treatment or may be left blank. In this invention, the preferred conditions for cathodic arc evaporation include a vacuum degree of 10-7 to 10''3 To
It is preferable to carry out the process at a pressure of rr. The inert gas may be argon, helium, or nitrogen gas. Evaporation distance is 100 to 500M, target evaporation rate is lXl0-3 to IXl0-'
mg/c+a 1 second, deposition amount is 1xio-3 to 1
It is preferable to perform the vapor deposition at 1 ng/c111. Furthermore, the thickness of the deposited film is about 0.005 to 3 μm, and the deposition time is about 0.05 to 30 minutes.
この発明の陰極アーク蒸着法により白金の蒸着層を高純
度アルミニウムの表面に形成できる。
この発明の方法によれば、粒子のイオン化率が高いため
、イオンボンバード効果が強く、またコーティング中の
バイアス効果も強いため、被処理材との密着性が極めて
高い皮膜が低温で容易に得られる。
この発明の陰極アーク蒸着法と、従来のイオンブレーテ
ィング法およびスパッタリング法について、白金の被処
理材上のイオン化率および粒子エネルギーを比較したも
のを、第１表に示す。
第１表
このように、陰極アーク蒸着法によれば、イオン化率が
他の方法に比べて著しく大きく、高イオンエネルギであ
るため、反応効率が向上し、アルミニウム電極と白金と
の密着性ならびに緻密性を顕著に向上させることができ
る。
また処理時間についても、この発明の陰極アーク蒸着法
によれば長くとも１０分程度で処理が終わるのに対し、
イオンブレーティング法では２０分程度、スパッタリン
グ法によれば５０分程度と、何れもこの発明の方法に比
べ相当の時間を要する。By the cathodic arc deposition method of the present invention, a deposited layer of platinum can be formed on the surface of high-purity aluminum. According to the method of this invention, since the ionization rate of particles is high, the ion bombardment effect is strong, and the bias effect during coating is also strong, so a film with extremely high adhesion to the treated material can be easily obtained at low temperatures. . Table 1 shows a comparison of the ionization rate and particle energy of platinum on the treated material between the cathodic arc evaporation method of the present invention and the conventional ion blating method and sputtering method. As shown in Table 1, the cathodic arc evaporation method has a significantly higher ionization rate and higher ion energy than other methods, which improves the reaction efficiency and improves the adhesion between the aluminum electrode and platinum. can significantly improve performance. Regarding the processing time, according to the cathodic arc evaporation method of the present invention, the processing can be completed in about 10 minutes at the most.
The ion blasting method takes about 20 minutes, and the sputtering method takes about 50 minutes, both of which take a considerable amount of time compared to the method of the present invention.
以下実施例に基づいて、この発明を更に詳細に説明する
。
一１！
まずこの発明の実施例として、高純度のアルミニウム箔
（純度９９．９５％）を５０Ｘ １００ｕニ切断したも
のを被処理材として使用し、この表面に白金を蒸着した
。
図面は、陰極アーク蒸着に使用する装置の概略を説明し
たものである。この発明は図面の装置により、実質的に
真空で白金からなる金属ターゲット（蒸発源）１０を陰
極としてアーク放電を起こすと、アークはターゲラ目０
の表面にアークスポットを形成し、アークスポットに集
中するアーク電流のエネルギーにより、ターゲツト材１
ｏは瞬時に溶融蒸発すると同時に金属イオン１２となり
、真空中に放出される。
この際、高純度のアルミニウムからなる被処理材１４に
対しバイアス電圧を印加することにより、この金属イオ
ン１２は、加速された反応ガス粒子１６と共に被処理材
１４の表面に密着し、緻密な膜を生成する。なお、図面
中１８および２ｏはアーク電源、２２はバイアス電源、
２４は回転テーブル、２６はガス入口、２８はガス出口
、３０は真空チャンバである。
トータルのチャンバ圧力を５ Ｘｌ０−’Ｔｏｒｒ、蒸
発距離２００層、アーク電源の電流値１００Ａ、形成速
度０．１ｕｍ／分とし、５分間陰極アーク蒸着をおこな
い、白金蒸着膜４約０．０５μｍの蒸着膜を形成させた
。
一土較■土−
被処理材の高純度アルミニウムは実施例１と同一のもの
を使用し、これをＩ Ｘ １０− ’Ｔｏｒｒのアルゴ
ン雰囲気中で、蒸発距離２００Ｍ、形成速度０．０５μ
ｍ／分で、イオンブレーティング法による白金蒸着をお
こない蒸着膜を形成させた。
−比較ＩＬＬ−
スパッタリング法による以外は、比較例１と同様に白金
の蒸着膜を形成させた。
形成条件は、Ｉ Ｘ ＩＦ ”Ｔｏｒｒのアルゴン雰囲
気中で白金をターゲットとして、形成速度０．０２μｍ
／分で蒸着をおこなった。
一比較、Ｌｌ
被処理材の高純度アルミニウムは、実施例１と同−のも
のを用いた。この比較例では、表面に蒸着膜を形成せず
、常法によってアルミニウム箔表面をエツチング処理し
、表面積を拡大して、単位面積あたりの静電容量を増大
させた。この比較例では、４００ ｕ Ｆ ／ ｃ＋ｌ
ｌであった。
これら実施例および比較例のアルミニウム箔について、
まず蒸着処理をしたものについて、蒸着された白金膜の
付着力を測定し、密着性を調べた。
この結果を第２表に示す。
第２表
この結果かられかるように、この発明の方法による蒸着
膜は、比較例に比べ密着性に優れることがわかる。
次に、これら実施例、各比較例の箔の静電容量を測定し
た結果を第３表に示す。
第３表
二の結果から明らかなように、この発明の方法により作
成された電解コンデンサは高い静電容量を得られること
がわかる。
■発明の効果】
以上述べたようにこの発明によれば、電解コンデンサ用
アルミニウム電極の表面に白金を付着させて蒸着膜の形
成する製造方法を改良することにより、蒸着膜の密着性
ならびに緻密性を向上させ、しかも処理時間を大幅に短
縮させることができる。
またアルミニウム電極表面に自然酸化皮膜によって形成
される静電容量によって電解コンデンサの静電容量値が
減少することが防止でき、小型大容量の電解コンデンサ
を得ることができる。The present invention will be described in more detail below based on Examples. One eleven! First, as an example of the present invention, high-purity aluminum foil (purity 99.95%) cut into 50×100 μ pieces was used as a material to be treated, and platinum was vapor-deposited on the surface. The drawings schematically illustrate an apparatus used for cathodic arc deposition. According to the present invention, when an arc discharge is caused by using the apparatus shown in the drawings in a substantially vacuum state using a metal target (evaporation source) 10 made of platinum as a cathode, the arc reaches 0.
An arc spot is formed on the surface of the target material 1, and the energy of the arc current concentrated on the arc spot causes the target material 1 to
o instantaneously melts and evaporates, turning into metal ions 12 and being released into vacuum. At this time, by applying a bias voltage to the material to be processed 14 made of high-purity aluminum, the metal ions 12, together with the accelerated reaction gas particles 16, adhere to the surface of the material to be processed 14, forming a dense film. generate. In addition, in the drawing, 18 and 2o are arc power supplies, 22 is a bias power supply,
24 is a rotary table, 26 is a gas inlet, 28 is a gas outlet, and 30 is a vacuum chamber. The total chamber pressure was 5 Xl0-' Torr, the evaporation distance was 200 layers, the current value of the arc power source was 100 A, and the formation rate was 0.1 um/min, and cathodic arc evaporation was performed for 5 minutes to deposit a platinum evaporated film of about 0.05 μm. A film was formed. The same high-purity aluminum as in Example 1 was used as the material to be treated, and it was evaporated in an argon atmosphere at I x 10-'Torr with an evaporation distance of 200M and a formation rate of 0.05μ.
Platinum was deposited by ion blating at a rate of m/min to form a deposited film. -Comparative ILL- A platinum vapor deposited film was formed in the same manner as in Comparative Example 1 except that the sputtering method was used. The formation conditions were platinum as a target in an argon atmosphere of I
/min. Comparison: Ll The same high-purity aluminum as in Example 1 was used as the material to be treated. In this comparative example, no vapor deposited film was formed on the surface, and the surface of the aluminum foil was etched by a conventional method to expand the surface area and increase the capacitance per unit area. In this comparative example, 400 uF/c+l
It was l. Regarding the aluminum foils of these examples and comparative examples,
First, the adhesion force of the deposited platinum film was measured and the adhesion was examined for the material that had been subjected to the vapor deposition process. The results are shown in Table 2. Table 2 As can be seen from the results, the film deposited by the method of the present invention has superior adhesion compared to the comparative example. Next, Table 3 shows the results of measuring the capacitance of the foils of these Examples and Comparative Examples. As is clear from the results in Table 3, Table 2, it can be seen that the electrolytic capacitor produced by the method of the present invention has a high capacitance. ■Effects of the Invention As described above, according to the present invention, by improving the manufacturing method of depositing platinum on the surface of an aluminum electrode for an electrolytic capacitor to form a deposited film, the adhesion and density of the deposited film can be improved. can be improved, and the processing time can be significantly shortened. Further, it is possible to prevent the capacitance value of the electrolytic capacitor from decreasing due to the capacitance formed by the natural oxide film on the surface of the aluminum electrode, and it is possible to obtain a small-sized, large-capacity electrolytic capacitor.
図面はこの発明で用いる陰極アーク蒸着装置の概略を表
した説明図である。
１８；アークｌｌ源The drawing is an explanatory diagram schematically showing a cathodic arc evaporation apparatus used in the present invention. 18; arc ll source
Claims (1)
よって白金の蒸着層を形成することを特徴とする電解コ
ンデンサ用アルミニウム電極の製造方法。(1) A method for producing an aluminum electrode for an electrolytic capacitor, which comprises forming a platinum vapor deposited layer on the surface of high-purity aluminum by cathodic arc evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16576989A JPH0330410A (en) | 1989-06-28 | 1989-06-28 | Manufacture of aluminum electrode for electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16576989A JPH0330410A (en) | 1989-06-28 | 1989-06-28 | Manufacture of aluminum electrode for electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0330410A true JPH0330410A (en) | 1991-02-08 |
Family
ID=15818689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16576989A Pending JPH0330410A (en) | 1989-06-28 | 1989-06-28 | Manufacture of aluminum electrode for electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0330410A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002371675A (en) * | 2001-06-14 | 2002-12-26 | Ig Tech Res Inc | Roof structure |
| JP2003013563A (en) * | 2001-06-29 | 2003-01-15 | Ig Tech Res Inc | Roof structure |
| US10580562B2 (en) | 2015-03-27 | 2020-03-03 | Epcos Ag | Inductive component and method for producing an inductive component |
-
1989
- 1989-06-28 JP JP16576989A patent/JPH0330410A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002371675A (en) * | 2001-06-14 | 2002-12-26 | Ig Tech Res Inc | Roof structure |
| JP2003013563A (en) * | 2001-06-29 | 2003-01-15 | Ig Tech Res Inc | Roof structure |
| US10580562B2 (en) | 2015-03-27 | 2020-03-03 | Epcos Ag | Inductive component and method for producing an inductive component |
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