JPH0330305B2 - - Google Patents
Info
- Publication number
- JPH0330305B2 JPH0330305B2 JP57068545A JP6854582A JPH0330305B2 JP H0330305 B2 JPH0330305 B2 JP H0330305B2 JP 57068545 A JP57068545 A JP 57068545A JP 6854582 A JP6854582 A JP 6854582A JP H0330305 B2 JPH0330305 B2 JP H0330305B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- type dopant
- integrated circuit
- collector
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- -1 aluminum ions Chemical class 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25729081A | 1981-04-24 | 1981-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57183068A JPS57183068A (en) | 1982-11-11 |
| JPH0330305B2 true JPH0330305B2 (fr) | 1991-04-26 |
Family
ID=22975664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57068545A Granted JPS57183068A (en) | 1981-04-24 | 1982-04-23 | Integrated circuit lateral transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183068A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61216469A (ja) * | 1985-03-22 | 1986-09-26 | Nec Corp | ラテラルトランジスタ |
| JP2859760B2 (ja) * | 1991-07-26 | 1999-02-24 | ローム株式会社 | ラテラルトランジスタおよびその製法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5360179A (en) * | 1976-11-10 | 1978-05-30 | Nippon Denso Co Ltd | Semiconductor device |
| JPS55108767A (en) * | 1979-02-15 | 1980-08-21 | Nec Corp | Semiconductor device and manufacture of the same |
-
1982
- 1982-04-23 JP JP57068545A patent/JPS57183068A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5360179A (en) * | 1976-11-10 | 1978-05-30 | Nippon Denso Co Ltd | Semiconductor device |
| JPS55108767A (en) * | 1979-02-15 | 1980-08-21 | Nec Corp | Semiconductor device and manufacture of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57183068A (en) | 1982-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4910160A (en) | High voltage complementary NPN/PNP process | |
| US3226613A (en) | High voltage semiconductor device | |
| US4458158A (en) | IC Including small signal and power devices | |
| JPH05347383A (ja) | 集積回路の製法 | |
| JPH05145076A (ja) | ウエーハ・ボンデイングを利用した縦型電流半導体デバイスおよびその製作方法 | |
| JPH0147014B2 (fr) | ||
| EP0243622A2 (fr) | Paire de transistors bipolaires complémentaires verticaux à jonction plate | |
| JPH0420265B2 (fr) | ||
| KR900005123B1 (ko) | 바이폴라 트랜지스터의 제조방법 | |
| US5128272A (en) | Self-aligned planar monolithic integrated circuit vertical transistor process | |
| US4804634A (en) | Integrated circuit lateral transistor structure | |
| EP0139130A1 (fr) | Procédé de fabrication d'un circuit intégré à transistor à haute performance et circuit intégré ainsi réalisé | |
| EP0386798A2 (fr) | Procédé de fabrication de régions d'interruption de canal dans une structure semi-conductrice | |
| US5411898A (en) | Method of manufacturing a complementary bipolar transistor | |
| EP0233202A1 (fr) | Fabrication d'un dispositif a semi-conducteur avec de l'oxyde enfoui. | |
| KR890003474B1 (ko) | Soi기판상에 형성된 래터럴 바이폴라 트랜지스터 | |
| US5151378A (en) | Self-aligned planar monolithic integrated circuit vertical transistor process | |
| US5602417A (en) | Low-noise bipolar transistor operating predominantly in the bulk region | |
| JPS62113471A (ja) | バイポ−ラトランジスタに浅く、大量にド−プされた外因性ベ−ス領域を形成する方法 | |
| US6445058B1 (en) | Bipolar junction transistor incorporating integral field plate | |
| US20040046186A1 (en) | Bipolar transistors and methods of manufacturing the same | |
| US4819049A (en) | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness | |
| JPH0330305B2 (fr) | ||
| US4089103A (en) | Monolithic integrated circuit device construction methods | |
| EP0718891B1 (fr) | Transistor bipolaire non-épitaxial à haute tension et haute performance |