JPH0329755B2 - - Google Patents
Info
- Publication number
- JPH0329755B2 JPH0329755B2 JP18577283A JP18577283A JPH0329755B2 JP H0329755 B2 JPH0329755 B2 JP H0329755B2 JP 18577283 A JP18577283 A JP 18577283A JP 18577283 A JP18577283 A JP 18577283A JP H0329755 B2 JPH0329755 B2 JP H0329755B2
- Authority
- JP
- Japan
- Prior art keywords
- cap
- crucible
- pulling
- single crystal
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 32
- 239000000470 constituent Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 239000002994 raw material Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000000155 melt Substances 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- -1 ZnS Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18577283A JPS6077196A (ja) | 1983-10-03 | 1983-10-03 | 単結晶の引上方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18577283A JPS6077196A (ja) | 1983-10-03 | 1983-10-03 | 単結晶の引上方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077196A JPS6077196A (ja) | 1985-05-01 |
| JPH0329755B2 true JPH0329755B2 (enrdf_load_stackoverflow) | 1991-04-25 |
Family
ID=16176614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18577283A Granted JPS6077196A (ja) | 1983-10-03 | 1983-10-03 | 単結晶の引上方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077196A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61275186A (ja) * | 1985-05-29 | 1986-12-05 | Hitachi Cable Ltd | 単結晶引上装置 |
-
1983
- 1983-10-03 JP JP18577283A patent/JPS6077196A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6077196A (ja) | 1985-05-01 |
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