JPH0329316B2 - - Google Patents

Info

Publication number
JPH0329316B2
JPH0329316B2 JP59225807A JP22580784A JPH0329316B2 JP H0329316 B2 JPH0329316 B2 JP H0329316B2 JP 59225807 A JP59225807 A JP 59225807A JP 22580784 A JP22580784 A JP 22580784A JP H0329316 B2 JPH0329316 B2 JP H0329316B2
Authority
JP
Japan
Prior art keywords
discharge
preliminary
discharge electrode
preliminary discharge
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59225807A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61104683A (ja
Inventor
Saburo Sato
Shuichi Ishida
Yasukazu Matsuoka
Tatsumi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP22580784A priority Critical patent/JPS61104683A/ja
Publication of JPS61104683A publication Critical patent/JPS61104683A/ja
Publication of JPH0329316B2 publication Critical patent/JPH0329316B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
JP22580784A 1984-10-29 1984-10-29 ガスレ−ザ発振装置 Granted JPS61104683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22580784A JPS61104683A (ja) 1984-10-29 1984-10-29 ガスレ−ザ発振装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22580784A JPS61104683A (ja) 1984-10-29 1984-10-29 ガスレ−ザ発振装置

Publications (2)

Publication Number Publication Date
JPS61104683A JPS61104683A (ja) 1986-05-22
JPH0329316B2 true JPH0329316B2 (OSRAM) 1991-04-23

Family

ID=16835097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22580784A Granted JPS61104683A (ja) 1984-10-29 1984-10-29 ガスレ−ザ発振装置

Country Status (1)

Country Link
JP (1) JPS61104683A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924506B2 (en) 1993-05-26 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel formation region comprising silicon and containing a group IV element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102761047B (zh) * 2012-07-30 2013-09-25 中国科学院光电研究院 一种气体激光器放电腔的电极机构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848485A (ja) * 1981-09-16 1983-03-22 Mitsubishi Electric Corp パルスレ−ザ発振器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924506B2 (en) 1993-05-26 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having channel formation region comprising silicon and containing a group IV element

Also Published As

Publication number Publication date
JPS61104683A (ja) 1986-05-22

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