JPH0329187B2 - - Google Patents

Info

Publication number
JPH0329187B2
JPH0329187B2 JP58125288A JP12528883A JPH0329187B2 JP H0329187 B2 JPH0329187 B2 JP H0329187B2 JP 58125288 A JP58125288 A JP 58125288A JP 12528883 A JP12528883 A JP 12528883A JP H0329187 B2 JPH0329187 B2 JP H0329187B2
Authority
JP
Japan
Prior art keywords
channel
transistors
basic cell
basic
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58125288A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6017930A (ja
Inventor
Shinji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58125288A priority Critical patent/JPS6017930A/ja
Priority to DE8484304668T priority patent/DE3477312D1/de
Priority to KR1019840003972A priority patent/KR890004568B1/ko
Priority to EP84304668A priority patent/EP0131463B1/fr
Publication of JPS6017930A publication Critical patent/JPS6017930A/ja
Priority to US07/008,042 priority patent/US4816887A/en
Publication of JPH0329187B2 publication Critical patent/JPH0329187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP58125288A 1983-07-09 1983-07-09 マスタ・スライス方式に於ける基本セル Granted JPS6017930A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58125288A JPS6017930A (ja) 1983-07-09 1983-07-09 マスタ・スライス方式に於ける基本セル
DE8484304668T DE3477312D1 (de) 1983-07-09 1984-07-09 Masterslice semiconductor device
KR1019840003972A KR890004568B1 (ko) 1983-07-09 1984-07-09 마스터슬라이스형 반도체장치
EP84304668A EP0131463B1 (fr) 1983-07-09 1984-07-09 Dispositif semi-conducteur du type "master slice"
US07/008,042 US4816887A (en) 1983-07-09 1987-01-21 CMOS gate array with orthagonal gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125288A JPS6017930A (ja) 1983-07-09 1983-07-09 マスタ・スライス方式に於ける基本セル

Publications (2)

Publication Number Publication Date
JPS6017930A JPS6017930A (ja) 1985-01-29
JPH0329187B2 true JPH0329187B2 (fr) 1991-04-23

Family

ID=14906364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125288A Granted JPS6017930A (ja) 1983-07-09 1983-07-09 マスタ・スライス方式に於ける基本セル

Country Status (1)

Country Link
JP (1) JPS6017930A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2868016B2 (ja) * 1988-12-28 1999-03-10 沖電気工業株式会社 ゲートアレイの基本セル
EP0394598B1 (fr) * 1989-04-28 1996-03-06 International Business Machines Corporation Cellule d'un réseau de transistors prédéposés composé de transistors à effet de champ à géométries différentes et optimisées
JPH03251338A (ja) * 1990-02-27 1991-11-08 Canon Inc 試料移送装置
US5300790A (en) * 1990-06-15 1994-04-05 Seiko Epson Corporation Semiconductor device
JP3186059B2 (ja) * 1990-06-15 2001-07-11 セイコーエプソン株式会社 半導体装置

Also Published As

Publication number Publication date
JPS6017930A (ja) 1985-01-29

Similar Documents

Publication Publication Date Title
KR100433025B1 (ko) 반도체장치,반도체집적회로장치,플립플롭회로,배타적논리합회로,멀티플렉서및가산기
US6765245B2 (en) Gate array core cell for VLSI ASIC devices
US5384472A (en) Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
US4589007A (en) Semiconductor integrated circuit device
EP0133958B1 (fr) Dispositif semi-conducteur du type "master slice"
EP0131463B1 (fr) Dispositif semi-conducteur du type "master slice"
JPH0516188B2 (fr)
US6590802B2 (en) Semiconductor storage apparatus
JPH0243349B2 (fr)
JPH0329187B2 (fr)
WO1993026044A1 (fr) Matrice logique symetrique en metal multicouche a bandes de connexion continues au niveau du substrat
JPH0252428B2 (fr)
JPS60254631A (ja) 半導体集積回路
JP2540222B2 (ja) 集積回路
JP2868016B2 (ja) ゲートアレイの基本セル
JPH0475664B2 (fr)
JPH0371789B2 (fr)
JPS6047440A (ja) 半導体集積回路
JPH0326548B2 (fr)
JPS60134435A (ja) 半導体集積回路装置
WO2023248772A1 (fr) Dispositif de circuit intégré à semi-conducteur
JP2522678B2 (ja) Ｃｍｏｓ集積回路装置
JP2002009176A (ja) Ｓｒａｍセル及びそれを内蔵した半導体集積回路
EP0495990A1 (fr) Dispositif semi-conducteur
JPH0496370A (ja) Ｃｍｏｓマスタスライス