JPH03291047A - Color photoelectric converter - Google Patents

Abstract

PURPOSE:To reduce moire caused at a joint region by arranging two picture elements or over in parallel in terms of the main scanning direction at an end of a picture element array in which adjacent color photoelectric conversion elements are arranged in the main scanning direction and using one picture element for an interpolation picture element. CONSTITUTION:A color photoelectric conversion device consists of semiconductor sensor chips 11, 12,... provided with plural color filters, resulting that plural picture elements R, G, B are arranged in the main scanning direction. A dead band region A without no picture element exists between the adjacent semiconductor sensor chips 11, 12. A picture element R3 as a picture element corresponding to the dead band region A is arranged in a direction at a right angle in the arrangement direction (Y direction) of picture elements as to the end of a picture element array of the semiconductor sensor 11, and the picture elements B2, R3 are arranged in parallel with the arrangement direction of the picture elements. Then an output signal from the picture element R3 interpolates the output signal of the picture element corresponding to the dead band region A.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a color photoelectric conversion device, and particularly has a plurality of pixels provided with a plurality of color filters, and the plurality of pixels are arranged in the main scanning direction. The present invention relates to a color photoelectric conversion device in which a plurality of color photoelectric conversion elements are arranged in the main scanning direction.

[Prior Art and Problems to be Solved by the Invention] Among color photoelectric conversion devices used in color image processing devices, there is a color photoelectric conversion device in which a plurality of semiconductor sensor chips, which are color photoelectric conversion elements, are arranged. In this color photoelectric conversion device, each semiconductor sensor chip is provided with a plurality of light receiving windows, and each of the light receiving windows is provided with a color filter.

FIG. 8(A) is an explanatory diagram showing an example of the arrangement of semiconductor sensor chips used in a conventional color photoelectric conversion device.

FIG. 8(B) is an enlarged view of section C in FIG. 8(A), and is an explanatory diagram showing the arrangement of color filters of the semiconductor sensor chip.

As shown in FIG. 8(A), semiconductor sensor chips 2-1 to 2-n are arranged in a line on a substrate 1,
As shown in FIG. 8(B), information is transmitted through color filters R (Red) and G (Green) arranged on each chip.
The color information signal is read out from the +B (Bj2ue) portion.

However, such a color photoelectric conversion device has a problem in that a dead zone occurs at the joint between each semiconductor sensor chip, and moiré occurs.

FIG. 9(A) is an explanatory diagram showing another example of the arrangement of semiconductor sensor chips used in a conventional color photoelectric conversion device.

FIG. 9 CB) is an enlarged view of section C in FIG. 9 (^), and is an explanatory diagram showing the arrangement of color filters of the semiconductor sensor chip.

The arrangement of sensors in which a plurality of chips are arranged alternately on the substrate 1 as shown in FIG. Since the pitch of the color filters does not change, there is no change in resolution even at the joints between chips.

However, the staggered sensor has a space d between the sensors that is considerably wider than the pitch X of the color filter.
A large amount of memory was required to synchronize output signals between sensors.

[Means for Solving the Problems] A color photoelectric conversion device of the present invention has a plurality of pixels provided with a plurality of color filters, and a color photoelectric conversion element in which the plurality of pixels are arranged in the main scanning direction. However, in a color photoelectric conversion device in which a plurality of color photoelectric conversion devices are arranged in the main scanning direction, a pixel row on two sides is placed at the end of the pixel row arranged in the main scanning direction of at least one of the adjacent color photoelectric conversion elements. The pixels are arranged in parallel in the main scanning direction, and the output signal from at least one of the pixels on two sides arranged in parallel is used as the output signal of the area corresponding to the seam of the color photoelectric conversion element. It is characterized by

[For use] The present invention provides pixels on two sides at the end of a pixel row arranged in the main scanning direction (pixel arrangement direction) of one color photoelectric conversion element of adjacent color photoelectric conversion elements. The output signals from the pixels arranged in parallel in the main scanning direction, excluding one of the pixels on the two sides arranged in parallel, are the output signals of the area corresponding to the seam of the color photoelectric conversion elements. This makes it possible to read information in the area corresponding to the seam.

Note that in this application, a pixel refers to a constituent unit of a sensor including a color filter, a photoelectric conversion region, and the like.

[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.

FIGS. 1A and 1B are explanatory diagrams showing the pixel arrangement of a first embodiment of a semiconductor sensor chip in a color photoelectric conversion device of the present invention.

Note that the arrangement of the semiconductor sensor chips is similar to that shown in FIG. 8 (Al).

As shown in FIG. 1 (Al(B)), between the adjacent semiconductor sensor chip 1 and the semiconductor sensor chip 12,
There is a dead area A with no pixels. Note that here, the dead area A corresponds to the pixel pitch (pitch of the color filter) X.

In this embodiment, pixel R is used as a pixel corresponding to dead area A.
8 is the pixel arrangement direction (main scanning direction) at the end of the pixel row of the semiconductor sensor chip 11.

Pixel B2 and pixel R1 are arranged in the direction perpendicular to the pixel arrangement direction (Y direction in the figure) (sub-scanning direction, here the sub-scanning direction refers to the direction in which the read document advances). They are arranged in parallel in the Y direction (in FIG. 1).

In FIG. 1(A), the middle of pixel B2 and pixel R1 is arranged so as to coincide with the center of other pixels arranged in the main scanning direction, but in FIG. 1(B), the pixel R1
are arranged in the same way as other pixels arranged in the main scanning direction, and pixel B2 is arranged above pixel R3 (or may be arranged below pixel R3).

Since the pixel pitch for each primary color (for example, between R and Rz) is twice (3X) the length X of the dead area A, even if the image sampling position of the pixel R8 is shifted by the distance X, the effect is small. This effect can be further reduced by providing a router on the sensor.

As shown in Figure 1 (A) and (B), the color filters are arranged in such a way that the color filters B and R are arranged in parallel with the direction in which the sensor chips are arranged, with emphasis placed on the continuity of the color signal G between each chip. It is desirable to place it in the direction. - This is because G occupies a very high proportion of the shooting image information.

When the color photoelectric conversion device of this embodiment is used in black and white mode, if the G output is used, the dead area becomes irrelevant because the arrangement is not changed like color filters B and H, and image deterioration is reduced. Does not occur.

FIG. 2 is an explanatory diagram showing the pixel arrangement of a second embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

The difference between this embodiment and the color photoelectric conversion device shown in FIGS. 1A and 1B lies in the inclusion of color filters B and R. When there is pixel discontinuity, pixel B, which has the least influence, is used for the insensitive area.

The configuration and operation of the signal readout circuit of the color photoelectric conversion device will be described below.

FIG. 3 is a circuit configuration diagram of a signal readout circuit of a color photoelectric conversion device.

FIG. 4 is a timing chart for explaining the operation of the signal readout circuit.

As shown in FIG. 3, the photoelectric conversion sensor is a bipolar type sensor, and one color light receiving element S is, for example, a sensor SR, as surrounded by a broken line.

It consists of S Gt and S Bt. Note that two pixels are arranged in parallel at the end of the pixel column of the semiconductor sensor chip, as in the first embodiment shown in FIG. 1(A). Here, for the sake of simplicity, the sensor SR,.

SG2. Only the configuration of the signal readout path configuration section regarding SB will be described.

Photo charges corresponding to the irradiated light passing through the color filters R, G, and B are accumulated in the base regions of the sensors SRx, SGt, and SB2, respectively. The signal charges amplified corresponding to the photocharges are sent to the sensors SR2 and SG, respectively.
i, is stored in the temporary storage capacitor Cxl+Cxt+Cxs from the emitter of SB2 via the MOS l-transistor MT2++WIrx□2MT□. -Time storage capacity C! i Cfl+ The signal transferred to Css is M controlled by the pulse φH1+ from the scanning circuit.
OS) Transistor MMll + MHxx + MH
21, to the horizontal output lines HL, HL, HL, and output signals for each of the three pixels R, G, B are transmitted to the horizontal output lines HL, HL, HL,
It is simultaneously output as IG Out + B 611t.

PMOS transistor M sz+ + Ma! 2+
N! a2s are sensors S R2, S c, S
This is for resetting the base of B2 to potential 2, and is controlled by pulse φRC. MOS transistor MV21 + MV2! + Mvxm are the vertical output lines V L zl, V L 2g, V
This is for resetting Lzs to potential VVC, and is controlled by pulse φvc. The MOS transistors Mcz+rWIcz*+Mcts are for resetting the negative storage capacitors C-3, Cz□, and C2, respectively, to predetermined potentials (here, GND), and the pulse φa. controlled by

MOS transistor M He! l+M 1le22
+ M Hczs are the horizontal output lines S L +
, S Lx , and ST- at predetermined potentials (here, G
This is for resetting to ND), and the pulse φ8c
controlled by

Note that the output of the pixel R1 is output simultaneously with the output of the pixels Gs, B= of the next semiconductor sensor chip. In other words, the output signal for every three pixels of one pixel G, R, and B is G out + R
After out I Bout is output, the scanning circuit pulse φ□. , , the interpolation pixel R1 is transferred to the output signal line, but at this time, the pixels G=, Bs from the next semiconductor sensor chip are also output at the same time. To drive the scanning circuit of the next semiconductor sensor chip in synchronization with the pulse φN□, the scanning circuit of the next semiconductor sensor chip must be driven by the pulse φ
A pulse outputted before Hn++, for example, the pulse φ shown in FIG. It may be set to the driving state with ut.

Next, the operation of the signal readout circuit will be explained using FIG. 4.

For simplicity, sensors SR-, SG*, SBt
Only the operation of the signal readout path configuration section will be described.

In the figure, first, in period T0, by setting φd to high level, the outputs of each sensor are accumulated in capacitors C, -C□, etc., respectively. The subsequent period T1 is a period for resetting the base of the sensor, which is a photoelectric conversion unit, and when the pulses φ and lc fall from high level to low level, the PMOS transistors Max+ and k*
+ Wlmgs is in the ON state, and each sensor S
The bases of Rx, S Gz, and S B- are set to the potential vllll
Reset to l.

Period T8 is a transient refresh period of the sensor, and when the pulse φvc is raised from low level to high level, MOS transistor Mv□.

Mvti and Mvz□ are in the ON state, and the vertical output line ■L
, , ,VL, , ,VL, , are reset to the potential V vc and the emitter of each sensor is also reset to the potential V vc. At this time, the charge remaining in the base is released to the emitter (this is called transient refresh). Period T3 is a period in which the signal accumulated in period f1 is output, as shown in FIG. 8(A). The signal accumulated from the temporary storage capacitor of each semiconductor sensor chip arranged in the sensor chip is output. - The signals accumulated during the f1 period are temporarily accumulated in the storage capacity. Period T sl, T within period T
sir T sx . . . each indicates a period during which signals from the semiconductor sensor chips 2-1.2-2.2-3° . . . are output.

The period T4 is a period for clearing the residual charge of the - time storage capacitor, and when the pulse φA is raised from a low level to a high level, the MOS transistor Mcw+ + M
cts + Mcts is in the ON state, and - time storage capacity CIl+ C2! The residual charge on +Cax is cleared.

The period T is a period in which the signal of the photoelectric conversion unit of each semiconductor sensor chip accumulated during the f2 period is charge-amplified and transferred to the negative storage capacitor.

Note that in the embodiment described above, the dead area A corresponds to the pixel pitch (color filter pitch) X, but if the dead area A is larger than this, the pixels on three sides are mainly used. The pixels are arranged in parallel in the scanning direction, and the output signals from all but one of the pixels on the three sides arranged in parallel are used as the output signal of the region corresponding to the seam of the color photoelectric conversion element. Bye. For example, if the length of the dead area A is 2x, three pixels are arranged in parallel in the main scanning direction, and the output signals from the two pixels are used as the output signals of the area corresponding to the seam of the color photoelectric conversion element. Bye.

FIG. 5 fA) (B) is an explanatory diagram showing the pixel arrangement of the third and fourth embodiments of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

This example shows a pixel arrangement in an example in which the length of the dead area A is 2X.

FIG. 5(A) shows pixels B2r on both sides of pixel G2.
A case is shown in which a pixel R8 is arranged, and FIG. 5B shows a case in which a pixel B29 and a pixel R1 are arranged above the five pixels G2 (they may be arranged below the pixel G2).

Furthermore, in the embodiments described above, three colors, R2G and H, are used, but the present invention can be applied even when there are two colors or four or more colors.

FIGS. 6A and 6B are explanatory diagrams showing pixel arrangements of a fifth embodiment and a sixth embodiment of a semiconductor sensor chip in a color photoelectric conversion device of the present invention.

This example shows a pixel arrangement in an example in which there are two colors.

Note that here, two colors are indicated by M.

In FIG. 6(A), the middle of pixel L4 and pixel M4 is arranged so as to coincide with the center of other pixels arranged in the main scanning direction, but in FIG. 6(B), the pixel M4
are arranged in the same way as other pixels arranged in the main scanning direction, and pixel L4 is arranged above pixel M4 (or may be arranged below pixel M4).

FIGS. 7(A) and 7(B) are explanatory diagrams showing pixel arrangements of a seventh embodiment and an eighth embodiment of a semiconductor sensor chip suitable for a color photoelectric conversion device of the present invention.

This example shows a pixel arrangement in an example in which there are four colors.

In addition, here, the four colors are L, M.

Indicated by N.

In FIG. 7(A), a pixel Li+pixel Nz of two colors out of four colors is arranged on both sides of the pixel M2, and in FIG. 7(B), a pixel L is arranged above the pixel M2.
A case where x+ pixel N2 is arranged is shown (it may be arranged below pixel M2).

Furthermore, in the embodiment described above, a plurality of pixels are arranged in parallel in the main scanning direction at the end of one chip, but by arranging a plurality of pixels in parallel in the main scanning direction at the end of the other chip as well. , the distance between the chips may be further increased.

[Effects of the Invention] As described above in detail, according to the color photoelectric conversion device of the present invention, the end portion of the pixel row arranged in the main scanning direction of one of the adjacent color photoelectric conversion elements The pixels on the two sides are arranged in parallel in the main scanning direction, and the output signal from at least one of the pixels on the two sides arranged in parallel is transmitted to the area corresponding to the seam of the color photoelectric conversion element. By setting the output signal to , it is possible to reduce moiré that occurs in the region corresponding to the seam of the color photoelectric conversion element. In the present invention, each pixel is arranged in a line in the main scanning direction, and there is no need for a staggered arrangement, so no special memory is required.

Therefore, it is possible to provide a color photoelectric conversion device that is inexpensive and has excellent performance.

[Brief explanation of the drawing]

FIGS. 1A and 1B are explanatory diagrams showing the pixel arrangement of a first embodiment of a semiconductor sensor chip in a color photoelectric conversion device of the present invention. FIG. 2 is an explanatory diagram showing the arrangement of pixels of a second embodiment of the semiconductor sensor chip in the color charge conversion device of the present invention. FIG. 3 is a circuit configuration diagram of a signal readout circuit of a color photoelectric conversion device. FIG. 4 is a timing chart for explaining the operation of the signal readout circuit. FIGS. 5A and 5B are explanatory diagrams showing pixel arrangements of a third embodiment and a fourth embodiment of a semiconductor sensor chip in a color photoelectric conversion device of the present invention. FIGS. 6A and 6B are explanatory diagrams showing pixel arrangements of a fifth embodiment and a sixth embodiment of a semiconductor sensor chip in a color photoelectric conversion device of the present invention. FIG. 7(^)(B) is an explanatory diagram showing the pixel arrangement of the seventh embodiment and the eighth embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention. FIG. 8(A) is an explanatory diagram showing an example of the arrangement of semiconductor sensor chips used in a conventional color photoelectric conversion device. FIG. 8(B) is an enlarged view of section C in FIG. 8(A), and is an explanatory diagram showing the arrangement of color filters of the semiconductor sensor chip. FIG. 9(A) is an explanatory diagram showing another example of the arrangement of semiconductor sensor chips used in a conventional color photoelectric conversion device. FIG. 9(B) is an enlarged view of section C in FIG. 9(A), and is an explanatory diagram showing the arrangement of color filters of the semiconductor sensor depth. Substrate, 11, 12.2-1 to 2-n, 2-1
~2-+n 3-1 to 3-m: semiconductor sensor chip.

Claims (1)

[Claims] (1) A color photoelectric conversion device in which a plurality of color photoelectric conversion elements are arranged in the main scanning direction, each having a plurality of pixels provided with a plurality of color filters, and the plurality of pixels are arranged in the main scanning direction. , two or more pixels are arranged in parallel in the main scanning direction at the end of a pixel row arranged in the main scanning direction of at least one of the adjacent color photoelectric conversion elements, and the pixels are arranged in parallel. A color photoelectric conversion device characterized in that an output signal from at least one pixel among the two or more pixels is an output signal of an area corresponding to a seam of color photoelectric conversion elements.