JP2578683B2 - Solid-state imaging device and driving method thereof - Google Patents

Solid-state imaging device and driving method thereof

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Publication number
JP2578683B2
JP2578683B2 JP2199585A JP19958590A JP2578683B2 JP 2578683 B2 JP2578683 B2 JP 2578683B2 JP 2199585 A JP2199585 A JP 2199585A JP 19958590 A JP19958590 A JP 19958590A JP 2578683 B2 JP2578683 B2 JP 2578683B2
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JP
Japan
Prior art keywords
transfer register
vertical transfer
bit
solid
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2199585A
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Japanese (ja)
Other versions
JPH0484575A (en
Inventor
透 渡辺
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Sanyo Denki Co Ltd
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Sanyo Denki Co Ltd
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Priority to JP2199585A priority Critical patent/JP2578683B2/en
Publication of JPH0484575A publication Critical patent/JPH0484575A/en
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Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は、撮像部の水平画素数に対して水平転送レジ
スタのビット数を半分にした固体撮像素子及びその駆動
方法に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device in which the number of bits of a horizontal transfer register is halved with respect to the number of horizontal pixels of an imaging unit, and a driving method thereof.

(ロ)従来の技術 従来のCCD固体撮像素子の水平転送レジスタの構造を
第3図に示す。
(B) Conventional technology FIG. 3 shows the structure of a horizontal transfer register of a conventional CCD solid-state imaging device.

(1)は水平転送部で、(2)は垂直転送部であり、
(3),(5),(6)は第2層ゲート電極、(4),
(7),(8)は第1層ゲート電極、(9)はチャンネ
ルストップ部である。また第1層ゲート電極(8)と第
2層ゲート電極(6)が、水平転送クロックφH1の入力
端子(a)に接続され、第1層ゲート電極(7)と第2
層ゲート電極(5)が水平転送クロックφH2の入力端子
(b)に接続されている。この図で示すように、通常水
平転送レジスタの1ビットは、第2層ゲート(5),
(6)、第1層ゲート(7),(8)の計4つのゲート
で構成されており、φH1とφH2が交互に反転することに
よって電荷が図面左方向に転送されていく。
(1) is a horizontal transfer unit, (2) is a vertical transfer unit,
(3), (5), and (6) are second-layer gate electrodes, (4),
(7) and (8) are first layer gate electrodes, and (9) is a channel stop portion. The first layer gate electrode (8) and the second layer gate electrode (6) are connected to the input terminal (a) of the horizontal transfer clock φH1, and the first layer gate electrode (7) and the second
The layer gate electrode (5) is connected to the input terminal (b) of the horizontal transfer clock φH2. As shown in this figure, one bit of the normal horizontal transfer register is composed of the second layer gate (5),
(6) The first layer gates (7) and (8) are composed of a total of four gates, and charges are transferred in the left direction in the drawing by alternately inverting φH1 and φH2.

(ハ)発明が解決しようとする課題 上述のような構造では、水平転送チャンネルの1ピッ
チ内に4本のゲートを構成する必要があり、ゲート間の
重なりなどを考えると解像度の向上のための高集積化に
対して大きな障害となる。
(C) Problems to be Solved by the Invention In the above-described structure, it is necessary to configure four gates within one pitch of the horizontal transfer channel. This is a major obstacle to high integration.

(ニ)課題を解決するための手段 本発明は、上述の課題を解決するためになされたもの
で、第1の特徴とするところは、受光素子からの信号電
荷を受ける適数ビットの複数の垂直転送レジスタが互い
に並行に配列され、この垂直転送レジスタの出力が水平
転送レジスタの各ビットに対応付けられた固体撮像素子
であって、偶数列の上記垂直転送レジスタには、独立駆
動可能な1ビットの付加ビットが出力側に設けられると
共に、この付加ビットを上記垂直転送レジスタの他のビ
ットと独立して駆動することで上記水平転送レジスタの
各ビットに奇数列と偶数列との垂直転送レジスタの信号
電荷を交互に転送することにある。
(D) Means for Solving the Problems The present invention has been made to solve the above-mentioned problems, and has a first feature in that a plurality of bits of an appropriate number of bits for receiving signal charges from a light receiving element are provided. Vertical transfer registers are arranged in parallel with each other, and the output of the vertical transfer register is a solid-state imaging device associated with each bit of the horizontal transfer register. An additional bit is provided on the output side, and the additional bit is driven independently of the other bits of the vertical transfer register, so that each bit of the horizontal transfer register has an odd column and an even column. Are alternately transferred.

そして第2の特徴とするところは、受光素子からの信
号電荷を受ける適数ビットの複数の垂直転送レジスタが
互いに並行に配列され、この垂直転送レジスタの出力が
水平転送レジスタの各ビットに対応付けられると共に、
偶数列の垂直転送レジスタに、独立駆動可能な1ビット
の付加ビットが出力側に設けられる固体撮像素子の駆動
方法に於いて、上記垂直転送レジスタから上記水平転送
レジスタに1ビットの上記信号電荷を転送した後に、上
記垂直転送レジスタの駆動を停止し、上記付加ビットを
駆動することで上記垂直転送レジスタの信号電荷を奇数
列と偶数列とを交互に上記水平転送レジスタの各ビット
に転送することにある。
The second feature is that a plurality of vertical transfer registers of a suitable number of bits for receiving signal charges from the light receiving element are arranged in parallel with each other, and the output of the vertical transfer register is associated with each bit of the horizontal transfer register. Along with
In a method for driving a solid-state image pickup device in which 1-bit additional bit that can be independently driven is provided on an output side in an even-numbered vertical transfer register, the 1-bit signal charge is transferred from the vertical transfer register to the horizontal transfer register. After the transfer, the driving of the vertical transfer register is stopped, and the additional bit is driven to transfer the signal charges of the vertical transfer register to each bit of the horizontal transfer register alternately in odd columns and even columns. It is in.

(ホ)作 用 本発明によれば、垂直転送レジスタの出力側に信号電
荷を一旦保持する付加ビットを設けることで、垂直転送
レジスタの信号電荷を奇数列と偶数列とで交互に水平転
送レジスタに出力することができ、水平転送レジスタの
ビット数が少なくとも1/2に削減される。
(E) Operation According to the present invention, by providing an additional bit for temporarily holding signal charges on the output side of the vertical transfer register, the signal charges of the vertical transfer register are alternately transferred to the horizontal transfer register in odd columns and even columns. And the number of bits in the horizontal transfer register is reduced to at least half.

(ヘ)実施例 本発明の実施例を図面に従って説明する。(F) Example An example of the present invention will be described with reference to the drawings.

第1図は、固体撮像素子の構造を示す図である。垂直
転送レジスタ(23)(24)は、チャンネルストップ領域
(22)で区画形成され、第1層ゲート電極(10),(1
2),(14),(15)と第2層ゲート電極(11),(1
3),(16),(17)が配列形成され、4つの転送ゲー
ト(10),(11),(12),(13)を1ビットとして、
垂直画素数分だけ存在し、また、1チャンネルおきに、
4つの転送ゲート電極(14),(15),(16),(17)
を設けることにより1ビット追加されている。4つの転
送ゲート電極(10),(11),(12),(13)は、それ
ぞれ転送クロックの入力端子(c)(d)(e)(f)
に接続され、垂直転送クロックVT1,VT2,VT3,VT4が入力
される。一方4つの転送ゲート電極(14),(15),
(16),(17)は、それぞれ入力端子(g)(h)
(i)(j)に接続され、垂直シフトクロック、VS1,VS
2,VS3,VS4が入力される。
FIG. 1 is a diagram showing a structure of a solid-state imaging device. The vertical transfer registers (23) and (24) are defined by the channel stop region (22), and are formed by the first-layer gate electrodes (10) and (1).
2), (14), (15) and the second layer gate electrode (11), (1
3), (16) and (17) are formed in an array, and four transfer gates (10), (11), (12) and (13) are defined as 1 bit.
There are as many as the number of vertical pixels, and every other channel
Four transfer gate electrodes (14), (15), (16), (17)
, One bit is added. The four transfer gate electrodes (10), (11), (12), and (13) are input terminals (c), (d), (e), and (f) of a transfer clock, respectively.
And the vertical transfer clocks VT1, VT2, VT3, VT4 are inputted. On the other hand, four transfer gate electrodes (14), (15),
(16) and (17) are input terminals (g) and (h), respectively.
(I) connected to (j), the vertical shift clock, VS1, VS
2, VS3, VS4 are input.

また、水平転送レジスタ(25)は、第1層ゲート電極
(18)(19)と第2層ゲート電極(20)(21)で構成さ
れ、ゲート電極(18)(21)は入力端子(a)に、ゲー
ト電極(19)(20)は入力端子(b)に接続され、それ
ぞれHT1,HT2とが入力される。
The horizontal transfer register (25) includes first layer gate electrodes (18) and (19) and second layer gate electrodes (20) and (21). The gate electrodes (18) and (21) are connected to the input terminal (a). ), The gate electrodes (19) and (20) are connected to the input terminal (b), and HT1 and HT2 are input, respectively.

次に、第2図に従い第1の固体撮像素子の動作につい
て説明する。この図において、(k)は、水平ブランキ
ング信号で、Highの期間が、有効映像期間であることを
示す。
Next, the operation of the first solid-state imaging device will be described with reference to FIG. In this figure, (k) indicates a horizontal blanking signal, and a High period is an effective video period.

垂直転送レジスタ(23)内の信号は、垂直転送パルス
VT1,VT2,VT3,VT4により、水平転送レジスタ(25)に転
送され、期間(26)の水平転送パルスHT1,HT2により出
力される。そして、垂直転送レジスタ(24)内の信号
は、垂直転送レジスタ(23)の信号と同様に垂直転送パ
ルスVT1,VT2,VT3,VT4により転送されタイミングT1にお
いては、ゲート電極(14)(16)の下に存在する。
The signal in the vertical transfer register (23) is the vertical transfer pulse
The signals are transferred to the horizontal transfer register (25) by VT1, VT2, VT3, and VT4, and output by the horizontal transfer pulses HT1 and HT2 in the period (26). The signals in the vertical transfer register (24) are transferred by the vertical transfer pulses VT1, VT2, VT3, and VT4 in the same manner as the signals in the vertical transfer register (23), and at timing T1, the gate electrodes (14) and (16) Exists under

次に、垂直転送レジスタ(23)の信号が水平転送レジ
スタ(25)より出力されるタイミングT2において、垂直
シフトパルスVS1,VS2,VS3,VS4により、水平転送チャン
ネル(25)に転送され、期間(27)の水平転送パルスHT
1,HT2により出力される。これらの動作を順次繰り返す
ことにより、すべての画素信号を、水平画素数の半分の
水平転送チャンネルで出力することができる。
Next, at timing T2 when the signal of the vertical transfer register (23) is output from the horizontal transfer register (25), the signal is transferred to the horizontal transfer channel (25) by the vertical shift pulses VS1, VS2, VS3, and VS4, and the period ( 27) Horizontal transfer pulse HT
Output by 1, HT2. By repeating these operations sequentially, all pixel signals can be output on a horizontal transfer channel having half the number of horizontal pixels.

なお、さらに1ビット増やした垂直転送チャンネルを
設けることによって水平転送チャンネルのビット数を1/
3,1/4と減らすことも可能である。
Note that the number of bits of the horizontal transfer channel is reduced by 1 /
It can be reduced to 3,1 / 4.

(ト)発明の効果 本発明によれば、固体撮像素子の高密度化の1つの障
害であった水平転送チャンネルの構造をより容易にか
つ、従来の2倍のサイズで構成できるため、固体撮像素
子の小型化、あるいは多画素化に有利となる。
(G) Effects of the Invention According to the present invention, the structure of the horizontal transfer channel, which has been one obstacle to the increase in the density of the solid-state imaging device, can be configured more easily and with twice the size of the conventional one. This is advantageous for reducing the size of the element or increasing the number of pixels.

通常のビデオカメラの信号処理においては、CCD出力
信号を通常の信号の時間軸に変換する必要があるが、こ
れは、1Hディレイライン、あるいは、ラインメモリーに
より容易に実現でき、特ディジタル信号処理において
は、より容易に変換できる。
In the signal processing of a normal video camera, it is necessary to convert the CCD output signal to the time axis of a normal signal.This can be easily realized by a 1H delay line or a line memory. Can be converted more easily.

さらに、単板カラーカメラにおいては、色分離のため
のサンプリングが必要なくなり、そのサンプリングによ
る高周波ノイズの折り返しノイズも防ぐことができ、画
質の向上にもつながる。
Further, in the single-chip color camera, sampling for color separation is not necessary, and aliasing of high frequency noise due to the sampling can be prevented, which leads to improvement in image quality.

【図面の簡単な説明】 第1図は、本発明の固体撮像素子の構成図、第2図は、
その動作を示すタイミング図、第3図は、従来の固体撮
像素子の構成図である。 (10)(11)(12)(13)……垂直転送用ゲート電極、
(14)(15)(16)(17)……垂直1ビットシフト用ゲ
ート電極、(18)(19)(20)(21)……水平転送用ゲ
ート電極、(22)……チャンネルストップ領域、(23)
(24)……垂直転送チャンネル領域、(25)……水平転
送チャンネル領域、VT1,VT2,VT3,VT4……垂直転送パル
ス、VS1,VS2,VS3,VS4……垂直シフトパルス、HT1,HT2…
…水平転送パルス。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram of a solid-state imaging device of the present invention, and FIG.
FIG. 3 is a timing chart showing the operation, and FIG. 3 is a configuration diagram of a conventional solid-state imaging device. (10) (11) (12) (13): Vertical transfer gate electrode
(14) (15) (16) (17) ... vertical 1-bit shift gate electrode, (18) (19) (20) (21) ... horizontal transfer gate electrode, (22) ... channel stop area ,(twenty three)
(24) Vertical transfer channel area (25) Horizontal transfer channel area VT1, VT2, VT3, VT4 Vertical transfer pulse, VS1, VS2, VS3, VS4 Vertical shift pulse, HT1, HT2
... horizontal transfer pulse.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】受光素子からの信号電荷を受ける適数ビッ
トの複数の垂直転送レジスタが互いに並行に配列され、
この垂直転送レジスタの出力が水平転送レジスタの各ビ
ットに対応付けられた固体撮像素子であって、 偶数列の上記垂直レジスタには、独立駆動可能な1ビッ
トの付加ビットが出力側に設けられると共に、 この付加ビットを上記垂直転送レジスタの他のビットと
独立して駆動することで上記水平転送レジスタの各ビッ
トに奇数列と偶数列との垂直転送レジスタの信号電荷を
交互に転送することを特徴とする固体撮像素子。
A plurality of vertical transfer registers of a suitable number of bits for receiving signal charges from a light receiving element are arranged in parallel with each other;
An output of the vertical transfer register is a solid-state imaging device corresponding to each bit of the horizontal transfer register. In the even-numbered vertical registers, one additional bit that can be driven independently is provided on the output side. By driving the additional bit independently of the other bits of the vertical transfer register, the signal charges of the odd-numbered column and the even-numbered vertical transfer register are alternately transferred to each bit of the horizontal transfer register. Solid-state imaging device.
【請求項2】上記垂直転送レジスタと上記水平転送レジ
スタとの間で上記信号電荷を一旦保持する付加ビットが
一定の間隔を置いて上記垂直転送レジスタの出力側に設
けられることを特徴とする請求項第1項記載の固体撮像
素子。
2. An additional bit for temporarily holding the signal charge between the vertical transfer register and the horizontal transfer register is provided at an output side of the vertical transfer register at a predetermined interval. Item 2. The solid-state imaging device according to Item 1.
【請求項3】受光素子からの信号電荷を受ける適数ビッ
トの複数の垂直転送レジスタが互いに並行に配列され、
この垂直転送レジスタの出力が水平転送レジスタの各ビ
ットに対応付けられると共に、偶数列の垂直転送レジス
タに、独立駆動可能な1ビットの付加ビットが出力側に
設けられる固体撮像素子の駆動方法に於いて、 上記垂直転送レジスタから上記水平転送レジスタに1ビ
ットの上記信号電荷を転送した後に、上記垂直転送レジ
スタの駆動を停止し、上記付加ビットを駆動することで
上記垂直転送レジスタの信号電荷を奇数列と偶数列とを
交互に上記水平転送レジスタの各ビットに転送すること
を特徴とする固体撮像素子の駆動方法。
3. A plurality of vertical transfer registers of a suitable number of bits receiving a signal charge from a light receiving element are arranged in parallel with each other,
The output of the vertical transfer register is associated with each bit of the horizontal transfer register, and the additional bits of one bit that can be independently driven are provided on the output side in the even-numbered vertical transfer registers. After the 1-bit signal charge is transferred from the vertical transfer register to the horizontal transfer register, the driving of the vertical transfer register is stopped, and the additional bit is driven to change the signal charge of the vertical transfer register into an odd number. A method for driving a solid-state imaging device, wherein columns and even columns are alternately transferred to each bit of the horizontal transfer register.
JP2199585A 1990-07-27 1990-07-27 Solid-state imaging device and driving method thereof Expired - Lifetime JP2578683B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2199585A JP2578683B2 (en) 1990-07-27 1990-07-27 Solid-state imaging device and driving method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2199585A JP2578683B2 (en) 1990-07-27 1990-07-27 Solid-state imaging device and driving method thereof

Publications (2)

Publication Number Publication Date
JPH0484575A JPH0484575A (en) 1992-03-17
JP2578683B2 true JP2578683B2 (en) 1997-02-05

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Country Link
JP (1) JP2578683B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288744B1 (en) 1994-11-11 2001-09-11 Sanyo Electric Co., Ltd. Solid-state image pickup device with a shared shift register and method of driving the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63108876A (en) * 1986-10-27 1988-05-13 Fuji Photo Film Co Ltd Solid-state image pickup device

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