JP2695507B2 - Color photoelectric conversion device - Google Patents

Description

The present invention relates to a color photoelectric conversion device, and more particularly to a color photoelectric conversion device having a plurality of pixels provided with a plurality of color filters, the plurality of pixels being arranged in a main scanning direction. The present invention relates to a color photoelectric conversion device in which a plurality of arranged color photoelectric conversion elements are arranged in the main scanning direction.

[Problems to be Solved by Prior Art and Invention] Among color photoelectric conversion devices used in color image processing devices, there is a color photoelectric conversion device in which a plurality of semiconductor sensor chips, which are color photoelectric conversion elements, are arranged. In this color photoelectric conversion device, a plurality of light receiving windows are provided in each of the semiconductor sensor chips, and a color filter is provided in the light receiving windows.

FIG. 8 (A) is an explanatory view showing an arrangement of an example of a semiconductor sensor chip used in a conventional color photoelectric conversion device.

FIG. 8 (B) is an enlarged view of the portion C of FIG. 8 (A), and is an explanatory view showing the arrangement of the color filters of the semiconductor sensor chip.

As shown in FIG. 8 (A), the semiconductor sensor chips 2-1 to 2-n are arranged in a line on the substrate 1, and as shown in FIG. Color filters on the chip R (Red), G (Green), B (Blue)
The color information signal is read from the portion.

However, such a color photoelectric conversion device has a problem that a dead zone is generated at the joint between the semiconductor sensor chips and moire is generated.

FIG. 9A is an explanatory view showing the arrangement of another example of the semiconductor sensor chip used in the conventional color photoelectric conversion device.

FIG. 9 (B) is an enlarged view of portion C of FIG. 9 (A), and is an explanatory view showing the arrangement of the color filters of the semiconductor sensor chip.

The arrangement of sensors in which a plurality of chips are alternately arranged on the substrate 1 as shown in FIG. 9 (A) is referred to as a zigzag arrangement. Such a zigzag arrangement of the sensor also includes information on the joint portion of the chips. Since the pitch of the color filter is not changed, there is a feature that the resolution does not change even at the joints of the chips.

However, the staggered sensor has a space d between the sensors which is considerably wider than the pitch x of the color filter, and a large amount of memory is required to synchronize the output signals between the sensors.

[Means for Solving the Problems] A color photoelectric conversion device of the present invention has a plurality of pixels provided with a plurality of color filters, and the plurality of pixels are arranged in the main scanning direction. In a color photoelectric conversion device in which a plurality of color photoelectric conversion elements are arranged in the main scanning direction, at least one of the adjacent color photoelectric conversion elements has a pixel row arranged in the main scanning direction at the end of which two or more pixels are arranged. Are arranged in parallel in the main scanning direction, and the output signal from at least one of the two or more pixels arranged in parallel is used as the output signal of the area corresponding to the joint of the color photoelectric conversion elements. To do.

[Operation] According to the present invention, two or more pixels are provided in the main scanning direction at an end of a pixel row arranged in the main scanning direction (pixel arrangement direction) of one color photoelectric conversion element of the adjacent color photoelectric conversion elements. About, arranged in parallel, the output signal from the other pixels except one of the two or more pixels arranged in parallel, by the output signal of the area corresponding to the joint of the color photoelectric conversion element, The information in the area corresponding to the joint can be read.

In the present application, the pixel refers to a constituent unit of a sensor including a color filter, a photoelectric conversion area, and the like.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIGS. 1A and 1B are explanatory views showing the pixel arrangement of the first embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

The layout of the semiconductor sensor chips is similar to that shown in FIG. 8 (A).

As shown in FIGS. 1 (A) and 1 (B), there is a dead area A having no pixel between the adjacent semiconductor sensor chips 11 and 12. In this case, the dead area A
Corresponds to the pixel pitch (color filter pitch) x.

In this embodiment, the pixel corresponding to the dead area A is a pixel.
R ₃ for the end of the pixel row of the semiconductor sensor chip 11,
Pixels B ₂ and R are arranged in a direction (sub-scanning direction, where the sub-scanning direction is the direction in which the read document advances) perpendicular to the pixel arrangement direction (main scanning direction, Y direction in the figure). ₃ is arranged in parallel in the pixel array direction (main scanning direction, Y direction in the figure).

In FIG. 1 (A), the pixel B ₂ and the pixel R ₃ are arranged so that the middle thereof is aligned with the centers of the other pixels arranged in the main scanning direction. However, in FIG. 1 (B), , Pixel R ₃ is arranged in the same manner as other pixels arranged in the main scanning direction,
Are arranged B ₂ above the display R ₃ (or may be disposed below the pixel R _3).

Since the pixel pitch for each primary color (for example, between R _{1 and} R ₂ ) is three times (3x) the length x of the dead area A, even if the image sampling position of the pixel R ₃ is displaced by the distance x, the effect is not affected. small. To further reduce this effect, It suffices to provide an optical filter on the sensor that causes the optical path shift of.

As shown in FIGS. 1 (A) and 1 (B), the color filters are arranged such that the color filters B and R are arranged in parallel with the arrangement direction of the sensor chips, placing importance on the continuity of the color signal G between the chips. It is desirable to arrange them in the direction. This is because the ratio of G in general image information is very high.

When the color photoelectric conversion device of the present embodiment is used in the black and white mode, if the G output is used, since the arrangement is not changed like the color filters B and R, the dead areas become irrelevant, and the image deterioration does not occur. Does not happen.

FIG. 2 is an explanatory diagram showing the pixel arrangement of the second embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

The difference between this embodiment and the color photoelectric conversion device shown in FIGS. 1A and 1B is that the color filters B and R are replaced. When there is discontinuity of pixels, the pixel B, which has the smallest influence, is used as the dead area.

The configuration and operation of the signal readout circuit of the color photoelectric conversion device will be described below.

FIG. 3 is a circuit configuration diagram of a signal reading circuit of the color photoelectric conversion device.

FIG. 4 is a timing chart for explaining the operation of the signal read circuit.

As shown in FIG. 3, the photoelectric conversion sensor is a bipolar type sensor, and one color light receiving element S is composed of sensors SR ₂ , SG ₂ and SB ₂ as surrounded by a broken line, for example. Two pixels are arranged in parallel at the end of the pixel row of the semiconductor sensor chip as in the first embodiment shown in FIG. 1 (A). Here, for simplification, the sensor
Only the configuration of the signal read circuit configuration unit relating to SR ₂ , SG ₂ and SB ₂ will be described.

Photoelectric charges corresponding to the irradiation light having passed through the color filters R, G, B are accumulated in the base regions of the sensors SR ₂ , SG ₂ , SB ₂ , respectively. The signal charges amplified corresponding to the photocharges are respectively stored in the temporary storage capacitors C ₂₁ , C ₂₂ from the emitters of the sensors SR ₂ , SG ₂ , SB ₂ via the MOS transistors M _T21 , M _T22 , M _T23. , it is stored in C _23. Temporary storage capacity C ₂₁ , C ₂₂ , C
_The signal transferred to ₂₃ is transferred to the horizontal output lines HL ₁ , HL ₂ , HL ₃ via the MOS transistors M _H21 , M _H22 , M _H23 controlled by the pulse φ _Hn from the scanning circuit, and the pixel R , G, and B are output as output signals R _out , G _out , and B _out for every three pixels at the same time.

The PMOS transistors M _B21 , M _B22 , and M _B23 are sensor
It is for resetting the bases of SR ₂ , SG ₂ , and SB ₂ to the potential V _BB , and is controlled by the pulse φ _RC . The MOS transistors M _V21 , M _V22 and M _V23 are respectively connected to the vertical output lines VL ₂₁ and V.
L ₂₂ and VL ₂₃ are for resetting the potential V _VC ,
Controlled by pulse φ _VC . MOS transistor M _C21 , M
_C22 and M _C23 are for resetting the temporary storage capacitors C ₂₁ , C ₂₂ and C ₂₃ to predetermined potentials (here, GND), and are controlled by the pulse φ _TC . MOS transistor M
_HC21 , M _HC22 , M _HC23 are horizontal output lines SL ₁ , SL ₂ , SL _{3 respectively.}
Is reset to a predetermined potential (here, GND), and is controlled by the pulse φ _HC .

The output of the pixel R ₃ is output at the same time as the output of the pixels G ₃ and B ₃ of the next semiconductor sensor chip. That is, pixel G,
After the output signals G _out , R _out , and B _{out for} every three pixels of R and B are output, the pixel R ₃ for interpolation by the pulse φ _{Hn + 1} of the scanning circuit is transferred to the output signal line. At this time, the pixels G ₃ and B ₃ from the next semiconductor sensor chip are also output at the same time. To drive the scanning circuit of the next semiconductor sensor chip in synchronization with the pulse φ _{Hn + 1} , the scanning circuit of the next semiconductor sensor chip is output before the pulse φ _{Hn + 1} , for example, the third pulse.
The pulse φ _out shown in the figure may be used for driving.

Next, the operation of the signal reading circuit will be described with reference to FIG.

Note that, for simplification, only the operation of the signal read circuit configuration unit regarding the sensors SR ₂ , SG ₂ , and SB ₂ will be described.

In the figure, first, in the period T ₀ , φ _{T is set} to the high level, and the outputs of the respective sensors are accumulated in the capacitors C _{21 to} C _23, etc. After that, the period T ₁ is a period for resetting the base of the sensor which is the photoelectric conversion unit, and when the pulse φ _RC falls from the high level to the low level, the PM
The OS transistors M _B21 , M _B22 , and M _B23 are turned on, and the bases of the sensors SR ₂ , SG ₂ , and SB ₂ are reset to the potential V _BB .

The period T ₂ is a transient refresh period of the sensor, and when the pulse φ _VC is raised from low level to high level,
The MOS transistors M _V21 , M _V22 , and M _V23 are turned on, the vertical output lines VL ₂₁ , VL ₂₂ , and VL ₂₃ are reset to the potential V _VC, and the emitters of the sensors are also reset to the potential V _VC . At this time,
The electric charge remaining in the base is discharged to the emitter (this is called transient refresh).

The period T ₃ is a period for outputting the signal accumulated in the period f ₁ and outputs the signal accumulated from the temporary accumulation capacity of each semiconductor sensor chip arranged as shown in FIG. 8 (A). . The signal accumulated in the f ₁ period is temporarily stored in the temporary storage capacity. The periods T ₃₁ , T ₃₂ , T _33, ... Within the period T ₃ indicate the periods in which the signals from the semiconductor sensor chips 2-1, 2-2, 2-3 ,.

The period T ₄ is a period for clearing the residual charge of the temporary storage capacitor, and when the pulse φ _TC is raised from the low level to the high level, the MOS transistors M _C21 , M _C22 , and M _C23 are turned on, and the temporary storage capacitor is turned on. The residual charges of C ₂₁ , C ₂₂ and C ₂₃ are cleared.

The period T ₅ is a period in which the signal of the photoelectric conversion unit of each semiconductor sensor chip accumulated in the period f ₂ is subjected to charge amplification and transferred to the temporary storage capacitor.

In the embodiment described above, the dead area A corresponds to the pixel pitch (color filter pitch) x, but when the dead area A is larger than this, three or more pixels are main-scanned. The pixels are arranged in parallel in the direction, and the output signals from the other pixels except one of the three or more pixels arranged in parallel may be used as the output signal of the area corresponding to the joint of the color photoelectric conversion elements. . For example, when the length of the dead area A is 2x, three pixels are arranged in parallel in the main scanning direction, and the output signals from the two pixels are the output signals of the area corresponding to the joint of the color photoelectric conversion elements. Good.

5 (A) and 5 (B) are explanatory views showing pixel arrangements of the third and fourth embodiments of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

The present embodiment shows a pixel arrangement according to an embodiment in which the length of the dead area A is 2x.

FIG. 5A shows a case where the pixels B ₂ and R ₃ are arranged on both sides of the pixel G ₂ , and FIG. 5B shows the pixels B ₂ and R on the upper side of the pixel G ₂ , respectively. _The case where ₃ is arranged is shown (may be arranged below the pixel G ₂ ).

Further, although the embodiment described above shows the case where the three colors of R, G and B are used, the present invention can be applied to the case of two colors or four or more colors.

FIGS. 6A and 6B are explanatory views showing pixel arrangements of the fifth and sixth embodiments of the semiconductor sensor chip in the color photoelectric conversion device of the present invention.

This embodiment shows a pixel arrangement of one embodiment when there are two colors.

 In addition, two color colors are indicated by L and M here.

In FIG. 6 (A), the pixel L ₄ and the pixel M ₄ are arranged so that the middle thereof is aligned with the centers of the other pixels arranged in the main scanning direction, but in FIG. 6 (B) , The pixel M ₄ is arranged in the same manner as the other pixels arranged in the main scanning direction,
The L ₄ are placed on top of the pixel M ₄ (may be disposed below the display M _4).

FIGS. 7A and 7B are explanatory views showing pixel arrangements of the semiconductor sensor chip of the seventh and eighth embodiments in the color photoelectric conversion device of the present invention.

This embodiment shows a pixel arrangement of one embodiment in the case of four color colors.

 In addition, the four color colors are indicated by K, L, M, and N here.

FIG. 7 (A) shows a case where pixels L ₂ and N ₂ of two colors out of four colors are arranged on both sides of the pixel M ₂ .
In FIG. 7B, the pixel L ₂ and the pixel N are provided above the pixel M ₂ , respectively.
A case where ₂ is arranged is shown (may be arranged below the pixel M ₂ ).

In the embodiment described above, a plurality of pixels are arranged in parallel in the main scanning direction at the end of one chip, but a plurality of pixels are arranged in parallel in the main scanning direction at the end of the other chip. The distance between chips may be further increased.

[Effects of the Invention] As described in detail above, according to the color photoelectric conversion device of the present invention, the end portion of the pixel row arranged in the main scanning direction of one color photoelectric conversion element of the adjacent color photoelectric conversion elements. , Two or more pixels are arranged in parallel in the main scanning direction, and the output signal from at least one of the two or more pixels arranged in parallel is output to the area corresponding to the joint of the color photoelectric conversion elements. By using a signal, it is possible to reduce moire generated in a region corresponding to the joint of the color photoelectric conversion elements. In the present invention, each pixel is arranged in a line in the main scanning direction and does not need to be arranged in a staggered manner, so that no special memory is required.

Therefore, it is possible to provide an inexpensive color photoelectric conversion device having excellent performance.

[Brief description of the drawings]

FIGS. 1A and 1B are explanatory views showing the pixel arrangement of the first embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention. FIG. 2 is an explanatory view showing the arrangement of pixels of the second embodiment of the semiconductor sensor chip in the color photoelectric conversion device of the present invention. FIG. 3 is a circuit configuration diagram of a signal reading circuit of the color photoelectric conversion device. FIG. 4 is a timing chart for explaining the operation of the signal read circuit. 5 (A) and 5 (B) are explanatory views showing pixel arrangements of the third and fourth embodiments of the semiconductor sensor chip in the color photoelectric conversion device of the present invention. 6A and 6B are explanatory views showing pixel arrangements of the semiconductor sensor chip of the fifth and sixth embodiments of the color photoelectric conversion device of the present invention. FIGS. 7A and 7B are explanatory views showing pixel arrangements of the semiconductor sensor chip of the seventh and eighth embodiments of the color photoelectric conversion device of the present invention. FIG. 8 (A) is an explanatory view showing an arrangement of an example of a semiconductor sensor chip used in a conventional color photoelectric conversion device. FIG. 8 (B) is an enlarged view of the portion C of FIG. 8 (A), and is an explanatory view showing the arrangement of the color filters of the semiconductor sensor chip. FIG. 9A is an explanatory view showing the arrangement of another example of the semiconductor sensor chip used in the conventional color photoelectric conversion device. FIG. 9 (B) is an enlarged view of portion C of FIG. 9 (A), and is an explanatory view showing the arrangement of the color filters of the semiconductor sensor chip. 1: substrate, 11, 12, 2-1 to 2-n, 2-1 to 2-m, 3-1 to 3
-M: Semiconductor sensor chip.

Claims (1)

(57) [Claims] 1. A color photoelectric conversion element having a plurality of pixels provided with a plurality of color filters, wherein the plurality of pixels are arranged in the main scanning direction, and a plurality of color photoelectric conversion elements are arranged in the main scanning direction. In the conversion device, two or more pixels are arranged in parallel in the main scanning direction at the end of the pixel row arranged in the main scanning direction of at least one of the color photoelectric conversion elements adjacent to each other, and arranged in parallel. A color photoelectric conversion device, wherein an output signal from at least one of the two or more pixels formed is an output signal of a region corresponding to a joint of the color photoelectric conversion element.