JPH03286568A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPH03286568A JPH03286568A JP8798690A JP8798690A JPH03286568A JP H03286568 A JPH03286568 A JP H03286568A JP 8798690 A JP8798690 A JP 8798690A JP 8798690 A JP8798690 A JP 8798690A JP H03286568 A JPH03286568 A JP H03286568A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- signal propagation
- substrate
- potential
- shielding electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 230000001902 propagating effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は集積回路装置の電極構造とその電位に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an electrode structure of an integrated circuit device and its potential.
［従来の技術］
従来、半導体集積回路装置における電極配線にはとりた
てて遮蔽電極が形成される事はながった又、プリント板
への配線等による集積回路装置に於てもとりたてて遮蔽
電極が形成される事もなく、ごく一部にシールド線によ
る配線が用いられ該シールド線の遮蔽電極も接地電位に
保持されるのが通例であった。[Prior Art] Conventionally, shielding electrodes have not been particularly formed in electrode wiring in semiconductor integrated circuit devices, and shielding electrodes have not been particularly formed in integrated circuit devices such as wiring to printed boards. It was customary to use a shielded wire for only a small portion of the wiring, and the shielding electrode of the shielded wire was also held at the ground potential.
［発明が解決しようとする課題］
しかし、上記従来技術によると電極配線間容量が大きく
なり、該容量への充、放電により信号の伝搬速度が遅延
し、高速度動作が出来ないと云う課題があった。[Problems to be Solved by the Invention] However, the above-mentioned conventional technology has the problem that the capacitance between the electrode wiring becomes large and the signal propagation speed is delayed due to charging and discharging of the capacitance, making it impossible to perform high-speed operation. there were.
本発明は、かかる従来技術の課題を解決し、高速動作が
可能な集積回路装置の電極構造とその電位を提供する事
を目的とする。It is an object of the present invention to solve the problems of the prior art and to provide an electrode structure and its potential for an integrated circuit device capable of high-speed operation.
［課題を解決するための手段］
上記課題を解決するために、本発明は、集積回路装置に
関し、信号伝搬電極の周辺の少なくとも一部に遮蔽電極
を形成し、該遮蔽電極の電位を信号伝搬電極等の動作電
位と同等か約半分の直流電位に保つか、あるいは緩衝回
路と連結して信号伝搬電極とほぼ同電位に保つ手段を取
る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to an integrated circuit device, in which a shielding electrode is formed at least in part around a signal propagation electrode, and the potential of the shielding electrode is used for signal propagation. Either keep it at a DC potential that is equal to or about half the operating potential of the electrodes, or take measures to keep it at about the same potential as the signal propagation electrode by connecting it to a buffer circuit.
［実施例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は、本発明の一実施例を示す半導体集積回路装置
の電極配線構造を示す要部の断面図である。すたわち、
半導体基板１の表面には絶縁膜２を介して信号伝搬電極
５とその両端に遮蔽電極４が形成されて戊る。いま、基
板１を接地し、遮蔽電極４及び４′に動作電圧を５ｖの
例をとると、その半分の２．５■の直流電位を付与する
と、信号伝播電極３と隣接して設けられる他の信号伝播
電極３′及び３“との間の電気容量は約１／２となりそ
の分信号伝播速度は速くなる。但し、基板１が接地され
ているので基板との容量は減少しない事になるが、基板
を半導体に限らず金属板として、該金属板に２．５Ｖを
印加しておくと、基板との間の電気容量も１／２となり
、その分信号伝播速度を高速化できる。更に、遮蔽電極
４及び４′に信号伝播電極３に伝わる信号と同期した信
号電位を緩衝回路を用いて付与すると、信号伝播電極、
うと遮蔽電極４，４′間の電気容量は、同期信号の付与
の仕方にもよるが、約１／２からほぼ零程度に迄減少す
る事もできる。FIG. 1 is a sectional view of a main part showing an electrode wiring structure of a semiconductor integrated circuit device according to an embodiment of the present invention. Stand,
A signal propagation electrode 5 and shielding electrodes 4 are formed on both ends of the signal propagation electrode 5 via an insulating film 2 on the surface of the semiconductor substrate 1. Now, if we take an example in which the substrate 1 is grounded and the operating voltage is 5V to the shielding electrodes 4 and 4', if we apply a DC potential of 2.5V, which is half of that, then the shielding electrodes 4 and 4' will be provided adjacent to the signal propagation electrode 3. The capacitance between the signal propagation electrodes 3' and 3'' is approximately 1/2, and the signal propagation speed increases accordingly.However, since the substrate 1 is grounded, the capacitance with the substrate does not decrease. However, if the substrate is not limited to a semiconductor but also a metal plate and 2.5V is applied to the metal plate, the capacitance between the substrate and the substrate will be reduced to 1/2, and the signal propagation speed can be increased accordingly. , when a signal potential synchronized with the signal transmitted to the signal propagation electrode 3 is applied to the shielding electrodes 4 and 4' using a buffer circuit, the signal propagation electrode,
The capacitance between the shield electrodes 4 and 4' can be reduced from about 1/2 to about zero, depending on how the synchronization signal is applied.
第２図は、本発明の他の実施例を示すプリント板等の電
極配線の要部の断面図である。すなわち絶縁体等から成
る基板１１及び、あるいは絶縁膜１２の表面に、信号伝
播電極１５をとり囲む様に遮蔽電極１４を形成したシー
ルド線と同等のものであり、信号伝播電極１６と遮蔽電
極１４との間は極力低誘電率の絶縁材で埋めるのが望ま
しく出来ればところどころに支柱を付けたエアー・アイ
ソレーションされたものが望ましい。いま、この信号伝
播電極１５に伝播する信号を０〜５■のパルス信号だと
し、遮蔽電極１４に５■または２．５■の直流電圧を印
加するが、前記信号伝播電極１３に伝播するパルス信号
と同期した同電位のパルス信号を緩衝回路を用いて付与
すると、遮蔽電極１４を接地した場合に比して電極間の
電気容量は約１／２からほぼ零近くに迄低減することが
でき、その分、信号伝播電極１３を流れる信号の伝播遅
延速度を短かくする事ができる。FIG. 2 is a sectional view of a main part of electrode wiring of a printed board or the like showing another embodiment of the present invention. In other words, it is equivalent to a shield wire in which a shield electrode 14 is formed to surround a signal propagation electrode 15 on the surface of a substrate 11 and/or an insulating film 12 made of an insulator or the like, and the signal propagation electrode 16 and the shield electrode 14 are It is desirable to fill the space between the two with an insulating material with a low dielectric constant as much as possible, and if possible, it is preferable to use an air-isolated structure with pillars installed here and there. Now, assuming that the signal propagating to the signal propagation electrode 15 is a pulse signal of 0 to 5 square meters, a DC voltage of 5 square or 2.5 square meters is applied to the shielding electrode 14, but the pulse signal propagating to the signal propagation electrode 13 By applying a pulse signal of the same potential in synchronization with the signal using a buffer circuit, the capacitance between the electrodes can be reduced from about 1/2 to almost zero compared to when the shield electrode 14 is grounded. , the propagation delay speed of the signal flowing through the signal propagation electrode 13 can be reduced accordingly.
尚、前記例でも示したが 集積回路装置にシールド線
による配線を行なう場合にも本発明が適用できることは
云うまでもない。As shown in the example above, it goes without saying that the present invention can also be applied to the case where shielded wires are used to wire the integrated circuit device.
［発明の効果コ
本発明により、高速動作が可能な集積回路装置を提供す
ることができる効果がある。[Effects of the Invention] According to the present invention, an integrated circuit device capable of high-speed operation can be provided.
第１図Figure 1
第１図及び第２図は本発明の実施例を示す集積回路装置
の電極配線部の要部の断面図である。
１．１１・・・・・・基 板
２．１２・・・・・・絶縁膜
５．３’、５“１１５，１１，１５”・・・・・・・・
・信号伝播電極
４．４’、１４・・・・・・遮蔽電極
第２図1 and 2 are cross-sectional views of essential parts of an electrode wiring section of an integrated circuit device showing an embodiment of the present invention. 1.11...Substrate 2.12...Insulating film 5.3', 5"115,11,15"...
・Signal propagation electrodes 4.4', 14... Shield electrodes Fig. 2
Claims (1)
成されて成り、該遮蔽電極の電位を信号伝搬電極等の動
作電位と同等か約半分の直流電位となるか、あるいは、
緩衝回路と連結して信号伝搬電極とほぼ同電位に保つ事
を特徴とする集積回路装置。A shielding electrode is formed at least in part around the signal propagation electrode, and the potential of the shielding electrode is set to a DC potential that is equal to or about half the operating potential of the signal propagation electrode, or
An integrated circuit device that is connected to a buffer circuit to maintain approximately the same potential as a signal propagation electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8798690A JPH03286568A (en) | 1990-04-02 | 1990-04-02 | Integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8798690A JPH03286568A (en) | 1990-04-02 | 1990-04-02 | Integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03286568A true JPH03286568A (en) | 1991-12-17 |
Family
ID=13930139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8798690A Pending JPH03286568A (en) | 1990-04-02 | 1990-04-02 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03286568A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5910684A (en) * | 1995-11-03 | 1999-06-08 | Micron Technology, Inc. | Integrated circuitry |
| US6091150A (en) * | 1996-09-03 | 2000-07-18 | Micron Technology, Inc. | Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms |
| US6456117B2 (en) | 2000-07-24 | 2002-09-24 | Mitsubishi Denki Kabushiki Kaisha | Shield circuit and integrated circuit in which the shield circuit is used |
| JP2014187183A (en) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | Semiconductor device |
-
1990
- 1990-04-02 JP JP8798690A patent/JPH03286568A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5910684A (en) * | 1995-11-03 | 1999-06-08 | Micron Technology, Inc. | Integrated circuitry |
| US6066553A (en) * | 1995-11-03 | 2000-05-23 | Micron Technology, Inc. | Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry |
| US6432813B1 (en) | 1995-11-03 | 2002-08-13 | Micron Technology, Inc. | Semiconductor processing method of forming insulative material over conductive lines |
| US6091150A (en) * | 1996-09-03 | 2000-07-18 | Micron Technology, Inc. | Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms |
| US6456117B2 (en) | 2000-07-24 | 2002-09-24 | Mitsubishi Denki Kabushiki Kaisha | Shield circuit and integrated circuit in which the shield circuit is used |
| JP2014187183A (en) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | Semiconductor device |
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