JPH03286546A - Surface light/voltage measurement device - Google Patents
Surface light/voltage measurement deviceInfo
- Publication number
- JPH03286546A JPH03286546A JP2087983A JP8798390A JPH03286546A JP H03286546 A JPH03286546 A JP H03286546A JP 2087983 A JP2087983 A JP 2087983A JP 8798390 A JP8798390 A JP 8798390A JP H03286546 A JPH03286546 A JP H03286546A
- Authority
- JP
- Japan
- Prior art keywords
- light
- transparent electrode
- wafer
- semiconductor
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000000523 sample Substances 0.000 abstract description 9
- 230000001066 destructive effect Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000001360 synchronised effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体の界面単位密度２表面絶縁膜中電荷量
、７′イア◆タイム、拡散長、 ＤｅｎｕｄｅｄＺＯｎ
θ深さ及び重金属汚染量を測定する５ｐｖ（Ｓｕｒｆａ
ｃｅ Ｐｈｏｔｏ Ｖｏｌｔａｇｅ ） 測定装置の
グローブ構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the interfacial unit density of a semiconductor, the amount of charge in the surface insulating film, the 7'ia◆time, the diffusion length, DenudedZOn
5 pv (Surfa) to measure θ depth and heavy metal contamination amount.
ce Photo Voltage) Regarding the glove structure of the measuring device.
［従来の技術］
従来、ＳＰＶ法として、Ｌ 、 、Ｔａ５ｔｒｚｅｂｓ
ｋｉ 。[Prior art] Conventionally, as the SPV method, L, , Ta5trzebs
ki.
” Ｎｏｎｄｅｓｔｒｎｃｔｉｖｅ ｒｅａｌ−ｔｉｍ
ｅ ｍｏｎｉｔｏｒｉｎｇｏｆ ｈｅａｕｙ ｍｅｔａ
ｌ ｃｏｎｔｏｍｉｎａｔｉｏｎ ａｎｄｅｆｆｉｃｉ
ｅｎｃｙ ｏｆ １ｎｔｅｒｎａｌ ｇｅｔｔｅ、ｒｉ
ｎｇｄｕｒｉｎｇ工Ｃｐｒｏｃｅｓｓｉｎｇ ｂｙ ｓ
ｕｒｆａｃｅｐｈｏｔｏｖｏｌｔａｇａ ｔｅｃｈｎ
ｉｑｕｌ ”Ｔｈｅ 工ｎｔｅｒｎａｔｉｏｎａｌ
ｃｏｎｆｅｒｅｎｃｅ ｏｎ ５ｃｉｅｎｃｅ
ａｎｄＴｅｃｈｎｏｌｏｇｙ ｃｆ Ｄｅｆｅｃ
ｔ ０ｏｎｔｒ、ｏユｌｉｎ Ｓｅｍ１ｃｏｎ４ｕ
ｃｔｏｒ ５ｅｐｔ １９８９．Ｙｏｋｏｈａｍａ
。” Non-destructive real-time
e monitoring of heauy meta
l contamination and deficiencies
ency of internal gette,ri
ngduring 工processing by s
surface photo voltage technology
iqul ”The engineering international
conference on 5science
andTechnology cf Defec
t 0ontr, oyulin Sem1con4u
ctor 5ept 1989. Yokohama
.
Ｊａｐａｎ及び、 Ｅｍｉｔ Ｋａｍｉｅｎｉｅｃｋｉ
、 ”Ｓｕｒｆａｃｅｃｈａｒｇｅ ａｎａｌｙｓｉｓ
：Ａｎｂｉ ｍｅｔｈｏｄ ｔｏ ｃｈａｒａｃｔｅｖ
ｉｚｅ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ／１ｎｓｕ’１
ａｔｏｒｓｔｒｕｃｔｕｒｅｓ ａｐｐｌｉｃａｔｉｏ
ｎ ｔｏ ５ｉｌｉｃｏｎ １０ｘｉｄθｓｙｓｔ１ｍ
ｌｌＣｌｅｃｔｒｏｃｈｅｍｉｃａｌ ５ｏｃｉ
ｅｔｙ、 工ｎＣ′θＦｉｃｒｓｔ 工ｎｔｅｒｎａ
ｔｉｏｎａｌ Ｓｙｍｐｏｓｉｕｍ ｏｎ （ｌｅａｎ
ｉｎｇＴｅｃｈｎｏｌｏｇｙ ｉｎＳｅｍｉｃｏｎｄｕ
ｃｔｏｒ Ｄｅｖｉｃｅ Ｍａｎｕｆａｃｔｕｒｉｎｇ
Ｏｏｃｔｏｂｅｒ １５−２０、１９８９ ）ｏに提案
された如く、マイカ等の絶縁体上に透明電極を付けたプ
ロ−プを半導体に接触させ、前記透明たプローブを通し
てチョッピングされた光を半導体表面から照射して、誘
起されて来る電荷による電圧を容量結合によりロックイ
ンアンプを通して測定すると云う方法が用いられていた
。Japan and Emit Kamieniecki
, ”Surface charge analysis
:Anbi method to character
ize semiconductor /1nsu'1
atorstructures application
n to 5ilicon 10xidθsyst1m
llElectrochemical 5oci
ety, 工nC′θFicrst 工interna
tional Symposium on (lean
ingTechnology inSemicondu
ctorDevice Manufacturing
As proposed in October 15-20, 1989), a probe with a transparent electrode attached to an insulator such as mica is brought into contact with the semiconductor, and chopped light is irradiated from the semiconductor surface through the transparent probe. Therefore, a method was used in which the voltage due to the induced charges was measured through a lock-in amplifier using capacitive coupling.
［発明が解決しようとする課題］
しかし、上記従来技術によると、プローブが半導体表面
に接触し、完全な非破壊テストではたく、半導体表面や
プローブ表面を汚染すると云う課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, there is a problem in that the probe comes into contact with the semiconductor surface, which does not allow for a complete non-destructive test, and contaminates the semiconductor surface and the probe surface.
本発明は、かかる従来技術の課題を解決し、完全に非破
壊なｓｐｖ測定装置を提供する事を目的とする。The present invention aims to solve the problems of the prior art and to provide a completely non-destructive spv measuring device.
［課題を解決するための手段］
上記課題を解決するために、本発明は表面光電圧測定装
置に関し、半導体基板表面から離間した位置に透明電極
を設置し、該透明電極を通してチョッピングされた光を
前記半導体表面に照射し、誘起された電荷による電位を
容量結合によりロック・イン・アンプを通して測定する
手段を取る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a surface optical voltage measuring device, in which a transparent electrode is installed at a position spaced apart from the surface of a semiconductor substrate, and the chopped light is transmitted through the transparent electrode to the A method is used to irradiate the semiconductor surface and measure the potential due to the induced charges through a lock-in amplifier using capacitive coupling.
［実施例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は、本発明の一実施例を示す表面光電圧測定装置
のシステム・ブロック・ダイアグラムである。すたわち
、光源１からの光１′はフィルター２及びライト・チョ
ッパ３を通して、１厘厚程度の石英、ガラス等の一生面
（表面又は裏面）に形成された、工Ｔｏ膜５から戊る透
明電極を通過させてＳｉウェーハ６の表面に照射する。FIG. 1 is a system block diagram of a surface optical voltage measuring device showing one embodiment of the present invention. That is, the light 1' from the light source 1 passes through the filter 2 and the light chopper 3, and is passed through the engineered To film 5 formed on the surface (front or back surface) of quartz, glass, etc. about 1 cm thick. The light passes through a transparent electrode and irradiates the surface of the Si wafer 6.
前記石英４及び工Ｔｏ膜５から戊るブローμは、Ｓｉウ
ェーハ６から１０μｍ〜ＩＤｗａ程度離間して設置でき
る様にしておく。Ｓｉウェーハ６０表面に誘起された電
荷は、容量結合によりライト・チョッパー５と同期して
ロック・イン・アンプ７により測定される。又、プロー
ブにＤＣ電圧を印加する場合には、Ｏｖ〜１０００Ｖ程
度のＤＣ電圧電源８により印加され、該ＤＣ電圧信号と
前記ロック・イン・アンプからの信号はデータ処理ユニ
ットにより処理され、界面準位密度、半導体表面絶縁膜
中電荷量、ライフ・タイム、拡散長２重金属汚染量ある
いはＤｅｎｖｅｌｅｄ Ｚｏｎθ深さとして計測、算出
される事となる。The blow μ formed from the quartz 4 and the To film 5 is arranged so as to be spaced apart from the Si wafer 6 by about 10 μm to IDwa. The charge induced on the surface of the Si wafer 60 is measured by the lock-in amplifier 7 in synchronization with the light chopper 5 due to capacitive coupling. In addition, when applying a DC voltage to the probe, it is applied by a DC voltage power source 8 of about Ov to 1000V, and the DC voltage signal and the signal from the lock-in amplifier are processed by a data processing unit and interface standard. It is measured and calculated as the potential density, the amount of charge in the semiconductor surface insulating film, the life time, the diffusion length, the amount of double heavy metal contamination, or the Denveled Zone θ depth.
［発明の効果］
本発明によると、プローブが半導体表面に接触する事が
ない為に、プローブ表面や半導体表面が汚染される事な
く完全に清浄た状態で測定する事ができ、プローブに寿
命が来たりする様た事も無く、正確た測定値が得られる
等の効果がある。[Effects of the Invention] According to the present invention, since the probe does not come into contact with the semiconductor surface, measurement can be performed in a completely clean state without contaminating the probe surface or the semiconductor surface, and the life of the probe can be extended. This has the advantage that accurate measurement values can be obtained without causing any problems.
６・・・・・・・・・ライト・チョッパー４・・・・・
・・・・石英（ガラス・マイラー）５・・・・・・・・
・工ＴＯ膜
６・・・・・・・・・Ｓ１ウエーハ（半導体基板）７・
・・・・・・・・ロック・インＯアンプ８・・・・・・
・・・ＤＣ電圧電源
９・・・・・・・・・データ処理ユニット以上6...Light Chopper 4...
...Quartz (glass/mylar) 5...
・TO film 6...S1 wafer (semiconductor substrate) 7・
......Lock-in O amplifier 8...
...DC voltage power supply 9... Data processing unit or higher
第１図は本発明の一実施例を示す表面光電圧測定装置の
システム・ブロック・ダイヤグラムである。
１・・・・−・・・・光 源
１′・・・・・・光FIG. 1 is a system block diagram of a surface optical voltage measuring device showing one embodiment of the present invention. 1...--...Light source 1'...Light
Claims (1)
、該透明電極を通して、チョッピングされた光を前記半
導体表面に照射して誘起された電荷による電位を容量結
合によりロック・イン・アンプを通して測定する事を特
徴とする表面光・電圧測定装置。A transparent electrode is installed at a distance from the surface of the semiconductor substrate, and the semiconductor surface is irradiated with chopped light through the transparent electrode, and the potential due to the induced charges is measured through a lock-in amplifier by capacitive coupling. A surface light/voltage measuring device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2087983A JPH03286546A (en) | 1990-04-02 | 1990-04-02 | Surface light/voltage measurement device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2087983A JPH03286546A (en) | 1990-04-02 | 1990-04-02 | Surface light/voltage measurement device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03286546A true JPH03286546A (en) | 1991-12-17 |
Family
ID=13930054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2087983A Pending JPH03286546A (en) | 1990-04-02 | 1990-04-02 | Surface light/voltage measurement device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03286546A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931803A (en) * | 2015-07-01 | 2015-09-23 | 清华大学 | Real-time measuring system for changes of an electric potential on the surface of an insulating material |
-
1990
- 1990-04-02 JP JP2087983A patent/JPH03286546A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931803A (en) * | 2015-07-01 | 2015-09-23 | 清华大学 | Real-time measuring system for changes of an electric potential on the surface of an insulating material |
| CN104931803B (en) * | 2015-07-01 | 2017-08-11 | 清华大学 | A kind of insulating materials surface potential variation real-time measurement system |
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