JPH02230698A - Plasma measurement procedure - Google Patents
Plasma measurement procedureInfo
- Publication number
- JPH02230698A JPH02230698A JP1050878A JP5087889A JPH02230698A JP H02230698 A JPH02230698 A JP H02230698A JP 1050878 A JP1050878 A JP 1050878A JP 5087889 A JP5087889 A JP 5087889A JP H02230698 A JPH02230698 A JP H02230698A
- Authority
- JP
- Japan
- Prior art keywords
- emitted light
- plasma
- axis
- light detection
- detection elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title description 11
- 238000005259 measurement Methods 0.000 title description 2
- 238000004020 luminiscence type Methods 0.000 claims description 14
- 238000000691 measurement method Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 10
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000001312 dry etching Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000001636 atomic emission spectroscopy Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000504 luminescence detection Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低温プラズマを利用した装置において、発光
分析法によりプラズマの計測及び制御を行うプラズマ計
測方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a plasma measurement method for measuring and controlling plasma by optical emission spectrometry in an apparatus using low-temperature plasma.
従来、プラズマ計１１｝１方法には、質量分析法、探針
法、発光分析法、電極電圧法、圧力変化法等がある。こ
のうち発光分析法は、最も簡単で安価な方法であり、プ
ラズマ系を乱さないため、ドライエッチングの終点検出
モニタとして一般的に用いられている。Conventional plasma meter 11}1 methods include mass spectrometry, probe method, emission spectrometry, electrode voltage method, pressure change method, and the like. Among these, the optical emission spectrometry method is the simplest and cheapest method, and because it does not disturb the plasma system, it is generally used as a monitor for detecting the end point of dry etching.
しかし、従来の発光分析法はチャンバーの特定箇所でプ
ラズマの広範囲領域の発光を検ＢＡ ｔ，ているため、
平均化された発光しか検出できないという問題点を有し
ていた。本発明はこのような問題点を解決するもので、
その目的とするところは、場所によるプラズマ状態の違
いを計測し、チャンバー内のプラズマ分布を知り得るプ
ラズマ計測方法を提供することにある。However, the conventional optical emission spectrometry method detects the emission of plasma over a wide range at a specific point in the chamber.
This method has a problem in that only averaged luminescence can be detected. The present invention solves these problems,
The purpose is to provide a plasma measurement method that can measure differences in plasma conditions depending on location and determine plasma distribution within a chamber.
本発明のプラズマ計測方法は、箱型チャンバーを有する
プラズマ発生装置において、前記箱型チャンバーの側面
ＸｓＹ方向に発光検出子を並設し、このＸＳＹ両方向の
発光検出子より得られるプラズマ発光強度に応じた電気
信号を演算処理することにより、チャンバー内の水平面
内プラズマ分布を計測することを特徴とする。In the plasma measurement method of the present invention, in a plasma generator having a box-shaped chamber, luminescence detectors are arranged in parallel on the side surfaces of the box-shaped chamber in the XsY directions, and the plasma emission intensity obtained from the luminescence detectors in both the It is characterized by measuring the plasma distribution in the horizontal plane within the chamber by processing the electrical signals generated.
第１図は、本発明の実施例におけるドライエッチング装
置の概略図である。箱型エッチングチャンパー１内には
、試料台電極２と対向電極３が設置されている。エッチ
ングガス導入後、この両電極間に高周波を印加すること
によりプラズマが形成され、試料台電極２上の基板４の
被膜がエッチングされる。発光検出子５は、エッチング
チャンパー１側面に取り付けられており、水平面内にお
けるプラズマ発光分布を計測する。FIG. 1 is a schematic diagram of a dry etching apparatus in an embodiment of the present invention. Inside the box-shaped etching chamber 1, a sample stage electrode 2 and a counter electrode 3 are installed. After the etching gas is introduced, plasma is formed by applying high frequency waves between the two electrodes, and the coating of the substrate 4 on the sample stage electrode 2 is etched. The light emission detector 5 is attached to the side surface of the etching chamber 1 and measures the plasma light emission distribution in a horizontal plane.
第２図は、上記エッチング装置の平面図である。FIG. 2 is a plan view of the etching apparatus.
以下、エッチングチャンパー１前面をＸ軸、側面をｙ軸
に設定する。Ｘ軸側には、発光検出子ＤＸ，、ＤＸ２・
・・Ｄｘｆｉが、ｙ軸側には、発光検出子ＤＹ，、ＤＹ
２・・・ＤＹ＋ｉが並列に配置されている。ここで、各
発光検出子（Ｄｘｌ−Ｄｘ．、ＤＹ１〜ＤＹｎ）には同
一空間の発光を測定ｉ〜ないような光学系を用いている
。各発光検出子は、それぞれの発光検出子により得られ
た信号を処理するための演算系６に接続されている。Hereinafter, the front side of the etching chamber 1 will be set as the X-axis, and the side surface will be set as the y-axis. On the X-axis side, there are light emission detectors DX, DX2.
・・Dxfi has light emission detectors DY,,DY on the y-axis side
2...DY+i are arranged in parallel. Here, each light emission detector (Dxl-Dx., DY1 to DYn) uses an optical system that does not measure light emission in the same space. Each luminescence detector is connected to an arithmetic system 6 for processing signals obtained by each luminescence detector.
あるエッチング条件下でプラズマ形成後、発光検出子（
Ｄｘ＋、Ｄ ｘｚ− Ｄ ｘ−）を用いて、ｙ軸に平行
な微小領域幅（Ｘ１、Ｘ２・・・ｘ６）の発光がそれぞ
れ計ハ１される。同時に、発光検出子（ＤＹＩ−ＤＹ２
・・・Ｄ ｙ−）を用いて、Ｘ軸に平行な微小幅領域（
Ｖｌ％Ｙ２・・・ｙ．）の発光がそれぞれ計測される。After plasma formation under certain etching conditions, a luminescence detector (
Dx+, Dxz-Dx-), a total of 1 light emission is generated in minute area widths (X1, X2...x6) parallel to the y-axis. At the same time, the luminescent detector (DYI-DY2
... D y-) to create a very small width region parallel to the X-axis (
Vl%Y2...y. ) are measured.
そして、上記各発光検出子により得られた信号は演算系
６に入力され、その時のエッチング条件下におけるプラ
ズマ状態がｘｙ平面内での相対発光強度分布として出力
される。The signals obtained by each of the light emission detectors are input to the calculation system 6, and the plasma state under the etching conditions at that time is output as a relative light emission intensity distribution in the xy plane.
以上のように、本発明は、チャンバー前面（Ｘ軸側）か
ら計１１）ＩＬた発光検出データと側面（ｙ軸側）から
計測した発光検出データより、２次元（ｘｙ平而内）の
プラズマ発光分布を計測することができる。As described above, the present invention detects a two-dimensional (xy-plane) plasma based on the luminescence detection data measured from the front side (X-axis side) of the chamber and the luminescence detection data measured from the side surface (y-axis side). Luminescence distribution can be measured.
本実施例においては、チャンバー前面（Ｘ軸側）及び側
面（ｙ軸側）上に並列に配列された各発光検出子により
発光分布を計測したが、前面、側面に１つずつの発光検
出子を用いて、各発光検出子をそれぞれＸ軸上、ｙ軸上
に沿って走査する方法によっても同様な測定が可能であ
る。In this example, the luminescence distribution was measured using luminescence detectors arranged in parallel on the front surface (X-axis side) and side surface (y-axis side) of the chamber. A similar measurement can also be made by scanning each light emitting detector along the X-axis and the Y-axis, respectively.
また、本発明の適用はドライエッチング装置に限定され
ず、スパッタリング装置等の一般的なプラズマ発生装置
に及ぶものである。Moreover, the application of the present invention is not limited to dry etching equipment, but extends to general plasma generation equipment such as sputtering equipment.
以上説明した本発明のプラズマπ１測方法は、水平面内
におけるプラズマ発光状態の場所による違いを計測する
ことができるので、装置固有のプラズマ特性あるいはプ
ラズマ発生条件と発光状態との関係を把握することがで
きる。従って、その結果をプロセス条件にフィードバッ
クすることにより、装置、条件を制御することが容易と
なる。また、局所的に発光分析を行うため、エッチング
の終点検出の確実性等のプロセスの安定化・自動化を図
ることができる。The plasma π1 measurement method of the present invention described above can measure the difference in plasma light emission state depending on the location in the horizontal plane, so it is possible to understand the plasma characteristics specific to the device or the relationship between the plasma generation conditions and the light emission state. can. Therefore, by feeding back the results to the process conditions, it becomes easy to control the apparatus and conditions. Furthermore, since the emission analysis is performed locally, it is possible to stabilize and automate processes such as reliable detection of the end point of etching.
第１図は本発明をドライエッチング装置に適用した場合
の一実施例を示す概略図、第２図は第１図の平面図を示
す。FIG. 1 is a schematic diagram showing an embodiment of the present invention applied to a dry etching apparatus, and FIG. 2 is a plan view of FIG. 1.
１ ・ ・ 拳 ・ ・ ２ 命 φ ・ ・ ・ ３一争−・・ ４ ・ ・ ・ ・ ・ ５ ・ ・ ψ ・ ・ ６ ・ ・ 中 ・ ・ Ｄｘ，〜ＤＸｎ・ ＤＹ＋〜ＤＹｎ’ ｘ １ 〜ｘＩｌ 瞭 ｙ １ 〜３’ｅ ’ エッチングチャンバー 試料台電極 対向電極 基板 発光検出子 演算系 Ｘ方向に配置した発光検出子 ｙ方向に配置した発光検出子 発光検出子（Ｄｘ＋−Ｄｘ．）の それぞれにより計測されるｙ 軸に平行な微小幅領域 ・発光検出子（ＤＹＩ〜ＤＹ．）の それぞれにより計測されるＸ 軸に平行な微小幅領域１ ・ ・ Fist ・・ 2 Life φ・・・・ 3-1 battle-- ４ ・ ・・ ・・ 5 ・ ・ ψ ・ ・ 6 ・ ・ Middle ・ ・ Dx, ~DXn・ DY+～DYn’ x1 ~ xIl clear y 1 ~ 3'e' etching chamber sample stage electrode Counter electrode substrate luminescent detector Arithmetic system Luminescent detector arranged in the X direction Luminescence detector placed in the y direction of the luminescent detector (Dx+-Dx.) y measured by each Small width region parallel to axis - Luminescence detector (DYI~DY.) X measured by each Small width region parallel to axis
以上 that's all
Claims (1)
記箱型チャンバーの側面ｘ、ｙ方向に発光検出子を並設
し、このｘ、ｙ両方向の発光検出子より得られるプラズ
マ発光強度に応じた電気信号を演算処理することにより
、チャンバー内の水平面内プラズマ分布を計測すること
を特徴とするプラズマ計測方法。In a plasma generation device having a box-shaped chamber, luminescence detectors are arranged side by side in the x and y directions on the sides of the box-shaped chamber, and electrical signals are generated according to the plasma luminescence intensity obtained from the luminescence detectors in both the x and y directions. A plasma measurement method characterized by measuring plasma distribution in a horizontal plane within a chamber by performing calculation processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1050878A JPH02230698A (en) | 1989-03-02 | 1989-03-02 | Plasma measurement procedure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1050878A JPH02230698A (en) | 1989-03-02 | 1989-03-02 | Plasma measurement procedure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02230698A true JPH02230698A (en) | 1990-09-13 |
Family
ID=12870983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1050878A Pending JPH02230698A (en) | 1989-03-02 | 1989-03-02 | Plasma measurement procedure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230698A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510095A (en) * | 1990-09-20 | 1996-04-23 | Kawasaki Steel Corporation | Production of high-purity silicon ingot |
| JP2017502259A (en) * | 2013-11-01 | 2017-01-19 | 東京エレクトロン株式会社 | Spatially resolved emission spectroscopy in plasma processing |
-
1989
- 1989-03-02 JP JP1050878A patent/JPH02230698A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510095A (en) * | 1990-09-20 | 1996-04-23 | Kawasaki Steel Corporation | Production of high-purity silicon ingot |
| JP2017502259A (en) * | 2013-11-01 | 2017-01-19 | 東京エレクトロン株式会社 | Spatially resolved emission spectroscopy in plasma processing |
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