JPH03286530A - Wafer cleaning apparatus - Google Patents

Wafer cleaning apparatus

Info

Publication number
JPH03286530A
JPH03286530A JP8881290A JP8881290A JPH03286530A JP H03286530 A JPH03286530 A JP H03286530A JP 8881290 A JP8881290 A JP 8881290A JP 8881290 A JP8881290 A JP 8881290A JP H03286530 A JPH03286530 A JP H03286530A
Authority
JP
Japan
Prior art keywords
wafer
cleaning
point
nozzle
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8881290A
Other languages
Japanese (ja)
Inventor
Shin Narisawa
成澤 伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8881290A priority Critical patent/JPH03286530A/en
Publication of JPH03286530A publication Critical patent/JPH03286530A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To reduce electrification in the central part of a wafer and to prevent an electrostatic breakdown by a method wherein a cleaning-water spray nozzle of a single-wafer-system wafer cleaning apparatus is equipped with an oscillating mechanism which works in conjunction with a nozzle reciprocating movement. CONSTITUTION:An arm 4 executes a link movement on a wafer 1 which is turned in the direction of (c) by using a point X as a fulcrum; a nozzle 3 at its tip executes an arc movement in directions of D and E from a point Y on the O-X line to a point Z on the outer circumference of the wafer. The distance X-Y is shorter than the distance X-O. The cleaning-water spray angle of the nozzle 3 is changed continuously in such a way that at the point Y it is at an angle at which the cleaning water reaches a point O on the wafer and that at the point Z it is a vertical direction. At the central part of the wafer, the cleaning water in the same quantity is received by a wide cleaning wafer spray face 9; as a result, a water pressure which is exerted on the surface is reduced. Consequently, while a cleaning effect is being kept, it is possible to prevent an electrostatic breakdown which is caused locally in the central part of the wafer.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はウェハ洗浄装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a wafer cleaning apparatus.

[従来の技術] 従来の技術としては第5図、第4図に示すように、重心
点○を回転中心とするウェハ1の上部に一点式の洗浄水
噴出ノ・ズル3を設け、ノズル3の洗浄水噴出角度を鉛
直方向に固定の状態でウェハ1の一端りから重心点Oを
経て他端Eまで円弧移動させるものであった。またノズ
ル3は移動速度が一定で、洗浄水2の噴出圧、噴出面積
もノズル6の位置に無関係に一定であった。
[Prior Art] As shown in FIGS. 5 and 4, the conventional technology is to provide a single-point type cleaning water jet nozzle 3 on the top of the wafer 1 with the center of gravity ◯ as the center of rotation. The wafer 1 was moved in an arc from one end of the wafer 1 through the center of gravity O to the other end E with the cleaning water ejection angle fixed in the vertical direction. Further, the moving speed of the nozzle 3 was constant, and the jetting pressure and jetting area of the cleaning water 2 were also constant regardless of the position of the nozzle 6.

[発明が解決しようとする課題] しかし前述の従来技術では使用する洗浄水の電気抵抗が
非常に高い場合が多く、ウニ・・表面では高水圧の洗浄
水2が外周部より中心部はど同−面瞳に長時間噴射され
ることから、ウェハ中心部はど帯電しやすく静電破壊が
多発するという課題を有していた。また静電破壊の対策
として洗浄水圧の低減が考えられるが、洗浄効果の面か
ら洗浄水量は確保しなげればたらない課題があった。
[Problem to be solved by the invention] However, in the conventional technology described above, the electrical resistance of the cleaning water used is often very high, and on the surface of sea urchins, the high pressure cleaning water 2 is applied to the center of the sea urchin rather than the outer periphery. - Since the spray is ejected into the surface pupil for a long period of time, the center of the wafer tends to be charged and electrostatic damage frequently occurs. In addition, reducing the water pressure for washing can be considered as a countermeasure against electrostatic damage, but from the viewpoint of cleaning effectiveness, it is necessary to ensure the amount of water for washing.

そこで本発明は従来のこの様な課題を解決するため、ウ
ェハ中心の洗浄効果を低減することなく静電破壊を防止
するウェハ洗浄装置を提供することを目的とする。
SUMMARY OF THE INVENTION In order to solve these conventional problems, it is an object of the present invention to provide a wafer cleaning apparatus that prevents electrostatic damage without reducing the cleaning effect of the wafer center.

[課題を解決するための手段] 上記課題を解決するため本発明のウニ・・洗浄装置は、
洗浄水噴出2ズルをウェー・表面上で往復運動させなが
ら洗浄水供給する枚葉式のウェハ洗浄装置において、前
記洗浄水噴出ノズルにノズル往復運動に連動する首振り
m構を備えたことを特徴とする。
[Means for Solving the Problems] In order to solve the above problems, the sea urchin cleaning device of the present invention has the following features:
A single-wafer type wafer cleaning device that supplies cleaning water while reciprocating two cleaning water jetting nozzles on the wafer surface, characterized in that the cleaning water jetting nozzle is provided with an oscillating mechanism that is linked to the reciprocating movement of the nozzle. shall be.

[作用] 本発明の上記構成によれば、洗浄水噴出角度がウェハ各
部で異たりウェハ表面の中心部受の洗浄水入射角度を小
さくすることができ、同量の洗浄水量のままウェハ表面
が受ける水圧は低減するので、ウェハ中心部での帯電が
低減し、静電破壊が防止される。
[Function] According to the above configuration of the present invention, the cleaning water ejection angle is different for each part of the wafer, and the angle of incidence of the cleaning water on the central receiver on the wafer surface can be made small, so that the wafer surface can be cleaned with the same amount of cleaning water. Since the applied water pressure is reduced, charging at the center of the wafer is reduced and electrostatic damage is prevented.

[実施料コ 第1図は本発明のウェハ洗浄装置の一実施列を示す側面
図である。ウェハ1は重心点○を回転中心とし、その上
部に洗浄水2をウェハ1の表面に噴出する一点式のノズ
ル3が、リンク運動するアーム4の先端に軸受5を介し
て配置される。またノズル5には軸受6を介して連接棒
7が取り付けられ、アーム4のリンク運動に連動して連
接棒7が矢印A、B方向に往復動し、その結果アーム4
のリンク運動に連動してノズル5はアーム4の先端の軸
受5を支点に首振り動をし、洗浄水2の噴出角度はZa
からZbまで変化する。ノズル35の洗浄水2の供給は
、ノズル5の首振り動による変位を吸収するチューブ8
から行なう。
FIG. 1 is a side view showing one implementation row of the wafer cleaning apparatus of the present invention. The wafer 1 rotates around the center of gravity ◯, and a one-point nozzle 3 above which sprays cleaning water 2 onto the surface of the wafer 1 is arranged via a bearing 5 at the tip of an arm 4 that moves in a linked manner. Further, a connecting rod 7 is attached to the nozzle 5 via a bearing 6, and the connecting rod 7 reciprocates in the directions of arrows A and B in conjunction with the link movement of the arm 4. As a result, the arm 4
In conjunction with the link movement of
It changes from to Zb. The cleaning water 2 is supplied to the nozzle 35 through a tube 8 that absorbs the displacement caused by the swinging motion of the nozzle 5.
Let's do it from

第2図は上述の実施例を示す平面図である。矢印C方向
に回転するウニ・・1上でアーム4は点Xを支点として
リンク運動し、先端のノズル5はO−X上の点Yからウ
ェハ外周上の点2まで矢印り、E方向に円弧移動する。
FIG. 2 is a plan view showing the above-mentioned embodiment. On the sea urchin rotating in the direction of arrow C...1, arm 4 moves in a linked manner with point Move in an arc.

距離X−Yは距離X−○より短く、ノズルろの洗浄水噴
出角度は点Yでは洗浄水がウェハ上の点0に達する角度
、点2では鉛直方向となるよう連続的に変化させる。9
はウェハ表面洗浄水噴射面である。ウニ・・中心部では
同水量の洗浄水を広い洗浄水噴射面で受けるため、表面
が受ける水圧が低減される。
The distance X-Y is shorter than the distance X-○, and the cleaning water jetting angle of the nozzle is continuously changed so that at point Y, the cleaning water reaches point 0 on the wafer, and at point 2, it is in the vertical direction. 9
is the wafer surface cleaning water injection surface. Sea urchins: Since the center receives the same amount of washing water on a wide washing water jetting surface, the water pressure applied to the surface is reduced.

上記構成では洗浄水噴出方向が鉛直方向に固定である場
合に比較して、ウェハ中心の表面が受ける水量は同量で
水圧が低減されるため帯電しにくい。またウェハ中心部
では洗浄水がウェハ外周方向にも速度を持つため洗浄効
果が増加する。
In the above configuration, compared to a case where the cleaning water ejection direction is fixed in the vertical direction, the surface at the center of the wafer receives the same amount of water and the water pressure is reduced, so that it is less likely to be charged. Further, in the center of the wafer, the cleaning water has a velocity also toward the outer circumference of the wafer, which increases the cleaning effect.

[発明の効果コ 以上述べたように本発明によれば、洗浄水量を同量とし
たままウニ・・表面の中心部が受ける洗浄水圧を低減で
きるため、洗浄効果を保ったままウェハ中心部で局所的
に発生する静電破壊を防止する効果がある。
[Effects of the invention] As described above, according to the present invention, it is possible to reduce the cleaning water pressure applied to the center of the wafer surface while keeping the amount of cleaning water the same. It has the effect of preventing electrostatic damage that occurs locally.

・・・・・・・・・洗浄水 ・・・・−・・・・ノズル ・・・・・・・・・アーム ・・・・・・・・・軸 受 ・・・・・・・−・軸 受 ・・・・・・・・・連接棒 ・・・・・・・・・チューブ ・・・・・・・・・ウェハ表面洗浄水噴射面取±・・・・・・・・・Washing water ・・・・・・・・・・Nozzle ·········arm ·········bearing ・・・・・・・・・-・Shaft holder ・・・・・・・・・Connecting rod ·········tube ・・・・・・Wafer surface cleaning water jet chamfering±

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第一のウェハ洗浄装置の一実施例を示
す測面図、第2図は同平面図、第3図は従来の技術を示
す平面図、第4図は同側面図である。
Fig. 1 is a surface diagram showing an embodiment of the first wafer cleaning apparatus of the present invention, Fig. 2 is a plan view of the same, Fig. 3 is a plan view showing a conventional technique, and Fig. 4 is a side view of the same. It is.

Claims (1)

【特許請求の範囲】[Claims] (1)洗浄水噴出ノズルをウエハ表面上で往復運動させ
ながら洗浄水供給する枚葉式のウェハ洗浄装置において
、前記洗浄水噴出ノズルにノズル往復運動に連動する首
振り機構を備えたことを特徴とするウェハ洗浄装置。
(1) A single-wafer type wafer cleaning apparatus that supplies cleaning water while reciprocating a cleaning water jetting nozzle on the wafer surface, characterized in that the cleaning water jetting nozzle is provided with a swinging mechanism that is linked to the reciprocating movement of the nozzle. Wafer cleaning equipment.
JP8881290A 1990-04-03 1990-04-03 Wafer cleaning apparatus Pending JPH03286530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8881290A JPH03286530A (en) 1990-04-03 1990-04-03 Wafer cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8881290A JPH03286530A (en) 1990-04-03 1990-04-03 Wafer cleaning apparatus

Publications (1)

Publication Number Publication Date
JPH03286530A true JPH03286530A (en) 1991-12-17

Family

ID=13953312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8881290A Pending JPH03286530A (en) 1990-04-03 1990-04-03 Wafer cleaning apparatus

Country Status (1)

Country Link
JP (1) JPH03286530A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368054A (en) * 1993-12-17 1994-11-29 International Business Machines Corporation Ultrasonic jet semiconductor wafer cleaning apparatus
US5785068A (en) * 1995-05-11 1998-07-28 Dainippon Screen Mfg. Co., Ltd. Substrate spin cleaning apparatus
US5904164A (en) * 1997-05-23 1999-05-18 Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag Arrangement for treatment of wafer-shaped articles, particularly silicon wafers
US6260562B1 (en) * 1997-10-20 2001-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning apparatus and method
US6691719B2 (en) * 2001-01-12 2004-02-17 Applied Materials Inc. Adjustable nozzle for wafer bevel cleaning
US6786224B2 (en) * 1999-07-01 2004-09-07 Lam Research Corporation Spin, rinse, and dry station with adjustable nozzle assembly for semiconductor wafer backside rinsing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5368054A (en) * 1993-12-17 1994-11-29 International Business Machines Corporation Ultrasonic jet semiconductor wafer cleaning apparatus
US5785068A (en) * 1995-05-11 1998-07-28 Dainippon Screen Mfg. Co., Ltd. Substrate spin cleaning apparatus
US5904164A (en) * 1997-05-23 1999-05-18 Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag Arrangement for treatment of wafer-shaped articles, particularly silicon wafers
US6260562B1 (en) * 1997-10-20 2001-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning apparatus and method
US6786224B2 (en) * 1999-07-01 2004-09-07 Lam Research Corporation Spin, rinse, and dry station with adjustable nozzle assembly for semiconductor wafer backside rinsing
US6691719B2 (en) * 2001-01-12 2004-02-17 Applied Materials Inc. Adjustable nozzle for wafer bevel cleaning

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