CN102416391A - Device and method for cleaning surface of wafer - Google Patents
Device and method for cleaning surface of wafer Download PDFInfo
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- CN102416391A CN102416391A CN2011103659106A CN201110365910A CN102416391A CN 102416391 A CN102416391 A CN 102416391A CN 2011103659106 A CN2011103659106 A CN 2011103659106A CN 201110365910 A CN201110365910 A CN 201110365910A CN 102416391 A CN102416391 A CN 102416391A
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- wafer surface
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- jet head
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Abstract
The invention discloses a device for cleaning the surface of a wafer, and relates to the technical field of semiconductor wafer processes. The device comprises a platform, at least one main spray nozzle and at least one auxiliary spray nozzle, wherein the at least one main spray nozzle is arranged on the platform; and the at least one auxiliary spray nozzle is arranged on the platform and is used for spraying liquid to the surface of a wafer to be cleaned, so that a liquid buffer layer for covering the surface of the wafer is formed. The invention also discloses a method for cleaning the surface of the wafer. In the method, the auxiliary spray nozzle sprays the liquid at intervals before the main spray nozzle sprays the cleaning liquid to the surface of the wafer to be cleaned and in the cleaning process so as to ensure that the liquid buffer layer completely covers the surface of the wafer to be cleaned. By the device and the method, high-speed nanoscale liquid is prevented from directly impacting patterns on the wafer through the liquid buffer layer, so that damages to the wafer are reduced.
Description
Technical field
The present invention relates to semiconductor wafer technology field, particularly a kind of wafer surface cleaning apparatus and cleaning method.
Background technology
Along with the integrated circuit characteristic size enters into the deep-submicron stage, the cleanliness factor of desired silicon chip surface is more and more harsher in the IC wafer manufacturing process, and cleaning also develops into one chip gradually and cleans.In the one chip cleaning process; Cleaning fluid is sprayed on wafer by the shower nozzle that is positioned at the wafer top; The centrifugal force that the rotation of impulsive force at a high speed and below wafer produces makes cleaning fluid leave wafer surface, simultaneously pollutants such as some particles is taken away, thereby is reached cleaning performance.But along with the size of wafer figure is more and more littler, the high velocity jet fluid can not be ignored the infringement of figure.In order to reduce the infringement to figure, all in research nanometer spraying technique, the fluid that promptly ejects is vaporific, is made up of various nano level drops now.As shown in Figure 1, the drop of shower nozzle 1 ejection drops on wafer surface, and the pollutant 3 on the patterning 2 of wafer surface is washed.Compare big drop or continuous fluid; The nanometer spraying technique can reduce the infringement to figure really to a certain extent; But the vaporific nano-liquid droplet that ejects is to be ejected on the wafer than higher speed, if these nano-liquid droplets at a high speed directly contact with figure, because drop size is little equally; Get into the inside of wafer feature size more easily, may cause deeper damage.And the fluid that sprays also not all is that vertical the injection fallen on the wafer, and the fluid of oblique incidence can cause bigger damage to the sidewall and the corner of figure again like this.Therefore, reducing into jet body is present problem demanding prompt solution to the damage of wafer surface.
Summary of the invention
The technical problem that (one) will solve
The technical problem that the present invention will solve is: in the process of clean wafers, how to reduce the damage of nanoscale drop at a high speed to wafer.
(2) technical scheme
For solving the problems of the technologies described above; The invention provides a kind of wafer surface cleaning apparatus; Comprise: platform, be arranged at least one the main jet head on the said platform; Comprise that also at least one is arranged on the auxiliary shower nozzle on the said platform, be used for, make to form the fluid cushion layer that one deck covers said wafer surface to wafer surface hydrojet to be cleaned.
Wherein, said main jet head and auxiliary shower nozzle include: turning arm, nozzle, liquid conduits, said nozzle are fixed on an end of said liquid conduits, and said liquid conduits is fixed on the turning arm, and said turning arm one end rotatably is fixed on the said platform.
Wherein, said turning arm is a hollow structure, and said liquid conduits is positioned at turning arm inside.
Wherein, said turning arm is a solid construction, and said liquid conduits is fixed on the turning arm outside.
Wherein, said main jet head and auxiliary shower nozzle turning arm separately evenly distribute with respect to the circumference at wafer place on platform.
The present invention also provides a kind of wafer surface cleaning method; Before wafer surface to be cleaned is sprayed cleaning fluid, reach in the cleaning process at the main jet head; Adopt auxiliary shower nozzle to wafer surface hydrojet to be cleaned, make to form the fluid cushion layer that one deck covers said wafer surface to be cleaned.
Wherein, spray in the process of cleaning fluid to said wafer surface to be cleaned, guaranteeing that the fluid cushion layer covers under the situation of wafer surface to be cleaned fully, auxiliary shower nozzle compartment of terrain spraying liquid at the main jet head.
Wherein, in cleaning process, one of said main jet head and auxiliary shower nozzle or all move in the regional extent above said wafer to be cleaned.
Wherein, if having when moving in main jet head and the regional extent of auxiliary shower nozzle above said wafer to be cleaned, have at least a main jet head opposite with the auxiliary shower nozzle direction of motion.
Wherein, the liquid of said auxiliary shower nozzle ejection comprises: water or with said cleaning fluid.
(3) beneficial effect
The present invention makes formation and keeps one deck to cover the fluid cushion layer of wafer surface to be cleaned fully through at auxiliary shower nozzle spraying liquid, avoids nanoscale drop at a high speed directly to impact the pattern on the wafer, thereby has reduced the damage to wafer.
Description of drawings
Sketch map when Fig. 1 is existing cleaning device clean wafers;
Fig. 2 is a kind of wafer surface cleaning apparatus structural representation of the embodiment of the invention;
Fig. 3 is the side schematic view of the device of Fig. 2;
Fig. 4 adopts the wafer surface sketch map behind the preceding formation of the device cleaning fluid cushion layer among Fig. 2;
Fig. 5 is the wafer surface sketch map that adopts when device cleans among Fig. 2;
Fig. 6 is that device auxiliary shower nozzle of main jet head rotation in cleaning process does not rotate sketch map among employing Fig. 2;
Fig. 7 is the sketch map that adopts device among Fig. 2 main jet head and auxiliary shower nozzle in cleaning process to rotate.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Like Fig. 2, shown in 3 and 4, wafer surface cleaning apparatus of the present invention comprises: platform 11, be fixed at least one main jet head 5, at least one auxiliary shower nozzle 8 on the platform 11, the situation of a main jet head and an auxiliary shower nozzle has been shown among Fig. 2.Main jet head 5 is used to spray cleaning fluid, and auxiliary shower nozzle 8 makes the fluid cushion layer 4 that forms one deck cover wafers 6 surfaces to wafer to be cleaned 6 surperficial hydrojets.
Preferably; Main jet head 5 includes with auxiliary shower nozzle 8: turning arm, nozzle, liquid conduits; Turning arm one end rotatably is fixed on the platform 11; Nozzle is fixed on an end of liquid conduits, and liquid conduits is connected (being not limited to this two kinds of connected modes) with nozzle through spiral or the cutting ferrule structure that cooperatively interacts.Liquid conduits is fixed on the turning arm, can rotate with turning arm, thereby make nozzle above wafer 6, move, and makes hydrojet arrive bigger scope.Turning arm can be hollow structure, and liquid conduits is positioned at turning arm inside; Liquid conduits can also be positioned at the turning arm outside.
Preferably; In order to keep spraying equably cleaning; The turning arm separately of main jet head 5 and auxiliary shower nozzle 8 evenly distributes with respect to the circumference at wafer 6 places on platform 11, and can be spaced apart, for the situation of having only a main jet head 5 and an auxiliary shower nozzle 8; The rotating shaft 7 of the turning arm of two shower nozzles and wafer 6 lays respectively at rotating shaft 7 both sides of wafer 6 at grade.
Owing to formed one deck fluid cushion layer 4 on the surface of wafer 6; Can directly not impact the patterned surfaces of wafer 6 from the drop of the high-speed nano of main jet head 5 ejection, as shown in Figure 5, but drop on the fluid cushion layer 4; Simultaneously wafer 6 itself is also along with rotating shaft 7 is rotated; Thereby cause fluid cushion layer 4 concussion, the chemical action of mechanism and chemical cleaning solution of utilizing this concussion has reached the purpose of not damaging wafer 6 picture on surface simultaneously together with the pollutant removal on the wafer 6.
Preferably, as shown in Figure 6 for clean wafers 6 more fully, when cleaning, main jet head 5 can move above wafer 6 around the turning arm of self, and main jet head 5 moves along track 9 among the figure.Simultaneously also avoided resting on a place for a long time, made the impulsive force accumulation at this place, this place is difficult to form fluid cushion layer 4.
Preferably, for guaranteeing fluid cushion layer 4 surface of cover wafers 6 fully, auxiliary shower nozzle 8 is moving in the region covered at self under the effect of turning arm, and is as shown in Figure 7, and auxiliary shower nozzle 8 moves along track 10, and main jet head 5 also moves along track 9 simultaneously.
Preferably; For guaranteeing fluid cushion layer 4 surface of cover wafers 6 fully; According to the size of wafer a plurality of main jet head 5, auxiliary shower nozzle 8 hydrojet simultaneously is installed above wafer, simultaneously a plurality of main jet head 5, auxiliary shower nozzle 8 can also can move in the region covered at self under the effect of turning arm.
The present invention also provides a kind of wafer surface cleaning method; Before cleaning; Auxiliary shower nozzle shift to an earlier date a period of time with lower speed to the wafer atomizing of liquids; Make wafer surface moistening, wafer surface has one deck fluid cushion layer when main jet head atomizing of liquids, thereby prevents that the wafer graphic structure directly receives the impact of high-velocity fluid.In cleaning process, auxiliary shower nozzle also with certain speed to the wafer hydrojet, the speed of its hydrojet will with the hydrojet speed of main jet head to cooperating, make it possible to keep forming the fluid cushion layer on complete cover wafers surface.
Spray in the process of cleaning fluid to wafer surface to be cleaned at the main jet head, guaranteeing that the fluid cushion layer covers under the situation of wafer surface to be cleaned fully, auxiliary shower nozzle compartment of terrain spraying liquid is to avoid unnecessary liquid waste.
Preferably, for guaranteeing the fluid cushion layer surface of cover wafers fully, and can clean better.In cleaning process, one of said main jet head and auxiliary shower nozzle or all move in the regional extent above said wafer to be cleaned.As shown in Figure 6, main jet head 5 moves along track 9.As shown in Figure 7; With the turning arm of two shower nozzles and wafer rotating shaft at grade, and the wafer rotating shaft situation that is positioned at both sides is an example respectively, and a begins rotation to main jet head 5 from the position; B finishes (being positioned at the c place among the figure) to the position; When main jet head 5 began to rotate, a ' began rotation to auxiliary shower nozzle 8 from the position, and b ' finishes (being positioned at c ' among the figure locates) to the position.Two shower nozzle rotating speeds are consistent, and that is to say, when main jet head 5 and two shower nozzle rotating shaft central points were wired to the α angle, auxiliary shower nozzle 8 and two shower nozzle rotating shaft central points were wired to the β angle, and the α angle is identical with the β angle.In cleaning process, the liquid phase that main jet head 5 and auxiliary shower nozzle 8 spray for the incident angle of wafer surface to be cleaned greater than 0 ° smaller or equal to 90 °.
The liquid of auxiliary shower nozzle ejection comprises: water, with the cleaning fluid of the first appearance of main jet or the liquid of other discord cleaning fluid reaction.
Above-mentioned wafer surface cleaning method can use above-mentioned wafer surface cleaning apparatus or the similar device of structure to realize.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. wafer surface cleaning apparatus; Comprise: platform, be arranged at least one the main jet head on the said platform; It is characterized in that; Comprise that also at least one is arranged on the auxiliary shower nozzle on the said platform, be used for, make to form the fluid cushion layer that one deck covers said wafer surface to wafer surface hydrojet to be cleaned.
2. wafer surface cleaning apparatus as claimed in claim 1; It is characterized in that; Said main jet head and auxiliary shower nozzle include: turning arm, nozzle, liquid conduits; Said nozzle is fixed on an end of said liquid conduits, and said liquid conduits is fixed on the turning arm, and said turning arm one end rotatably is fixed on the said platform.
3. wafer surface cleaning apparatus as claimed in claim 2 is characterized in that, said turning arm is a hollow structure, and said liquid conduits is positioned at turning arm inside.
4. wafer surface cleaning apparatus as claimed in claim 2 is characterized in that, said turning arm is a solid construction, and said liquid conduits is fixed on the turning arm outside.
5. like each described wafer surface cleaning apparatus in the claim 2～4, it is characterized in that said main jet head and auxiliary shower nozzle turning arm separately evenly distribute with respect to the circumference at wafer place on platform.
6. wafer surface cleaning method; It is characterized in that; Before wafer surface to be cleaned is sprayed cleaning fluid and in the cleaning process, adopt auxiliary shower nozzle at the main jet head, make to form the fluid cushion layer that one deck covers said wafer surface to be cleaned to wafer surface hydrojet to be cleaned.
7. wafer surface cleaning method as claimed in claim 6; It is characterized in that; Spray in the process of cleaning fluid to said wafer surface to be cleaned at the main jet head, guaranteeing that the fluid cushion layer covers under the situation of wafer surface to be cleaned fully, auxiliary shower nozzle compartment of terrain spraying liquid.
8. wafer surface cleaning method as claimed in claim 6 is characterized in that, in cleaning process, and one of said main jet head and auxiliary shower nozzle or all move in the regional extent above said wafer to be cleaned.
9. wafer surface cleaning method as claimed in claim 8 is characterized in that, if having when moving in main jet head and the regional extent of auxiliary shower nozzle above said wafer to be cleaned, has at least a main jet head opposite with the auxiliary shower nozzle direction of motion.
10. like each described wafer surface cleaning method in the claim 6～9, it is characterized in that the liquid of said auxiliary shower nozzle ejection comprises: water or with said cleaning fluid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103659106A CN102416391A (en) | 2011-11-17 | 2011-11-17 | Device and method for cleaning surface of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103659106A CN102416391A (en) | 2011-11-17 | 2011-11-17 | Device and method for cleaning surface of wafer |
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| CN102416391A true CN102416391A (en) | 2012-04-18 |
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| CN2011103659106A Pending CN102416391A (en) | 2011-11-17 | 2011-11-17 | Device and method for cleaning surface of wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103008299A (en) * | 2012-11-30 | 2013-04-03 | 北京七星华创电子股份有限公司 | Gas-liquid two-phase spray cleaning device and cleaning method |
| CN103346108A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Device and method for improving smoothness of wafer edge |
| WO2014082402A1 (en) * | 2012-11-28 | 2014-06-05 | 北京七星华创电子股份有限公司 | Cleaning device for preventing liquid from splashing and cleaning system having same |
| CN111081585A (en) * | 2018-10-18 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Spray device and cleaning equipment |
| CN113182249A (en) * | 2021-04-14 | 2021-07-30 | 燕山大学 | High-pressure cleaning machine and cleaning method for disc parts |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111337A (en) * | 1987-10-26 | 1989-04-28 | Toshiba Corp | Wafer cleaning apparatus |
| US5887605A (en) * | 1996-06-05 | 1999-03-30 | Samsung Electronics Co., Ltd. | Apparatus for cleaning semiconductor wafers |
| US5975098A (en) * | 1995-12-21 | 1999-11-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of cleaning substrate |
| CN1852778A (en) * | 2003-09-30 | 2006-10-25 | 东京毅力科创株式会社 | Method and apparatus for dispensing a rinse solution on a substrate |
| WO2007083358A1 (en) * | 2006-01-17 | 2007-07-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
| CN101459047A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning semiconductor wafer surface |
| CN202356338U (en) * | 2011-11-17 | 2012-08-01 | 北京七星华创电子股份有限公司 | Wafer surface cleaning device |
-
2011
- 2011-11-17 CN CN2011103659106A patent/CN102416391A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111337A (en) * | 1987-10-26 | 1989-04-28 | Toshiba Corp | Wafer cleaning apparatus |
| US5975098A (en) * | 1995-12-21 | 1999-11-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of cleaning substrate |
| US5887605A (en) * | 1996-06-05 | 1999-03-30 | Samsung Electronics Co., Ltd. | Apparatus for cleaning semiconductor wafers |
| CN1852778A (en) * | 2003-09-30 | 2006-10-25 | 东京毅力科创株式会社 | Method and apparatus for dispensing a rinse solution on a substrate |
| WO2007083358A1 (en) * | 2006-01-17 | 2007-07-26 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
| CN101459047A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning semiconductor wafer surface |
| CN202356338U (en) * | 2011-11-17 | 2012-08-01 | 北京七星华创电子股份有限公司 | Wafer surface cleaning device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014082402A1 (en) * | 2012-11-28 | 2014-06-05 | 北京七星华创电子股份有限公司 | Cleaning device for preventing liquid from splashing and cleaning system having same |
| CN103008299A (en) * | 2012-11-30 | 2013-04-03 | 北京七星华创电子股份有限公司 | Gas-liquid two-phase spray cleaning device and cleaning method |
| CN103346108A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Device and method for improving smoothness of wafer edge |
| CN111081585A (en) * | 2018-10-18 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Spray device and cleaning equipment |
| CN111081585B (en) * | 2018-10-18 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Spray device and cleaning equipment |
| CN113182249A (en) * | 2021-04-14 | 2021-07-30 | 燕山大学 | High-pressure cleaning machine and cleaning method for disc parts |
| CN113182249B (en) * | 2021-04-14 | 2022-08-05 | 燕山大学 | High-pressure cleaning machine and cleaning method for disc parts |
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Application publication date: 20120418 |