JPH0328372A - Production of thin film - Google Patents
Production of thin filmInfo
- Publication number
- JPH0328372A JPH0328372A JP16163389A JP16163389A JPH0328372A JP H0328372 A JPH0328372 A JP H0328372A JP 16163389 A JP16163389 A JP 16163389A JP 16163389 A JP16163389 A JP 16163389A JP H0328372 A JPH0328372 A JP H0328372A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film layer
- polymer substrate
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920000307 polymer substrate Polymers 0.000 claims abstract description 18
- 239000004642 Polyimide Substances 0.000 claims abstract description 4
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 239000000696 magnetic material Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 2
- 239000004760 aramid Substances 0.000 claims 1
- 229920003235 aromatic polyamide Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 19
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000004804 winding Methods 0.000 abstract description 5
- 230000008602 contraction Effects 0.000 abstract description 2
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 12
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 3
- 239000010952 cobalt-chrome Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 241000208140 Acer Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本゛発明{よ 形状の優れた薄膜を形成するための薄膜
の製造方法に関すん
従来の技術
現代社会において薄膜技術の果たす役割は非常に多岐に
わたっていも 薄膜基板材料は機械的特性から高分子フ
イルム等の可とう性基板及びガラス板等の非可とう性基
板に大別でき、基板の機械特性に合った薄膜製造方法が
用いられていも 高分子フィルムの様な可とう性基板を
用いる場合には 薄膜の量産方法として連続巻取り方式
を用いることが出来も これは巻出しロールから巻出さ
れたロール状の高分子基板が走行中にめっき法・スバッ
タ法・真空蒸着法などによって基板上に薄膜を形威した
檄 巻取りロールに巻き取る方法で、大量生産に適した
方法とされていも こうして形成された薄膜ζ友 装飾
包装用フィルム・磁気記録媒体をはじめとした広い分野
で用いられていも薄膜の形成法においては薄膜形成後の
内部応力の緩和・表面硬度の向上などを目的としたアニ
ールと呼ばれる熱処理が行われることがあも この処理
(よ 第3図に示すように巻取り走行系を用いて例えば
大気中で昇温ローラ54に沿って薄膜形戒済み高分子基
板3を走行させることによって可能であも 昇温ローラ
54を用いたアニール処理の場合は高分子基板3が昇温
ローラにふれ始めるとき及び昇温ローラからはなれると
きに急激に熱変形するので皺が発生し易L( またア
ニール処理後の薄膜の表面性が昇温ローラ54の表面性
に依存するので表面平滑性のよい薄膜を得るには昇温ロ
ーラ54の表面もまた平滑であることが必要である。昇
温ローラ54を用いたこれらの課題を回避する一つの手
段として、昇温ローラ54を用いない直接加熱が有効で
あも 即ち第4図に示すように薄膜形成済み高分子基板
3がガイドローラ4、4間を走行中に加熱用ヒータ55
を用いて非接触の加熱を行なうことによってアニール処
理を行なうことが出来も
発明が解決しようとする課題
ところがアニール処理によって高分子基板3の熱収縮が
おきると薄膜が形成された高分子基板3は一般に基板を
内側にしてカール(反り)をおこも カールの程度はア
ニール温度が高いほど強く、カールを少なくすることと
十分なアニール効果を与えることは相反する課題であつ
九 また非接触加熱を行なった場合は昇温ローラ55を
用いてアニール処理を行なった場合に比べて基板幅方向
のカールが更に強くなってしまう。[Detailed description of the invention] Industrial application field This invention relates to a thin film manufacturing method for forming a thin film with an excellent shape.Conventional technology Thin film technology plays a very wide variety of roles in modern society. Thin film substrate materials can be broadly classified into flexible substrates such as polymer films and non-flexible substrates such as glass plates based on their mechanical properties. When using a flexible substrate such as a film, a continuous winding method can be used as a method for mass production of thin films.・A thin film is formed on a substrate by a method such as a sputtering method or a vacuum evaporation method.A method of winding a thin film onto a take-up roll is considered to be a method suitable for mass production. Although it is used in a wide range of fields including recording media, thin film formation methods often involve heat treatment called annealing for the purpose of relaxing internal stress and improving surface hardness after thin film formation. (As shown in FIG. 3, it is possible to use the temperature-raising roller 54 by running the thin-film pre-treated polymer substrate 3 along the temperature-raising roller 54 in the atmosphere, for example, using a winding system. In the case of annealing, the polymer substrate 3 undergoes rapid thermal deformation when it begins to touch the temperature-raising roller and when it comes off the temperature-raising roller, so wrinkles are likely to occur (Also, the surface properties of the thin film after annealing Since it depends on the surface properties of the temperature-raising roller 54, in order to obtain a thin film with good surface smoothness, the surface of the temperature-raising roller 54 must also be smooth.These problems can be avoided by using the temperature-raising roller 54. Direct heating without using the temperature raising roller 54 is effective as a means for heating the polymer substrate 3 with a thin film formed thereon, as shown in FIG.
The problem to be solved by the present invention is that the annealing treatment can be performed by non-contact heating using a wafer. However, when the thermal contraction of the polymer substrate 3 occurs due to the annealing treatment, the polymer substrate 3 on which the thin film has been formed will shrink. In general, curling occurs with the substrate inside.The higher the annealing temperature, the stronger the curl, and reducing curl and providing a sufficient annealing effect are contradictory issues. In this case, the curl in the width direction of the substrate becomes even stronger than in the case where the annealing process is performed using the temperature raising roller 55.
本発明{上 このような従来技術の課題を解決すること
を目的とすム
課題を解決するための手段
本発明は長尺の高分子基板上に直接あるいは下地層を介
して薄膜層を形成した後に前記高分子基板を大気中また
は同等以上の酸素を含む雰囲気中で熱源に非接触で昇温
処理する薄膜の製造方法において、昇温処理中に前記高
分子基板をその幅方向の両側から吸引することを特徴と
する薄膜の製造方法であも
作用
本発明によれば長尺高分子基板上に形成された薄膜のア
ニール処理の際に基板長手方向及び幅方向の両方に張力
がかかるので特定方向に強いカールが発生することがな
く、全体としてカールの少ない薄膜を形成することが出
来も
実施例
以下に 本発明の実施例について図面を参照しながら説
明すも
第1図は本発明の一実施例を示す図玄 従来例を示す第
3図と異なる点は加熱部分に吸引ノズル7を設けたこと
にあも 第2図は第1図A−A′部分の断面を示も 薄
膜が形威された高分子基板3は熱源9および反射板8か
らなる加熱用ヒータ5の近傍を通過中に吸引ノズル7に
よって幅方向の張力を受けも 熱源9としては遠赤外線
ヒータの他 ハロゲンランプ・レーザなどを用いること
ができも また 吸引手段7としては各種の真空ポンプ
を用いることが出来も 厚さ10μ四 輻20cmのポ
リイミド基板上に真空蒸着法によつて膜厚250nmの
CoCr層を設けた垂直磁気記録媒体の表面酸化を目的
として、アニール温度320℃及び300t, フィ
ルム走行速度lm/分でアニール処理を行なl,X.吸
引ノズル7によって基板幅方向のテンシタンを加えるこ
とによりカールの低減を試みた アニール温度は予備実
験として加熱用ヒータ側の高分子基板面に蒸着によって
熱電対を形成したものを用いてヒータ電力と基板温度の
関係を求めておいた結果より決定しtち また吸引ノ
ズル7による基板幅方向のテンシタンも予備実験により
高分子基板3上の歪ゲージを用いて吸引強度とテンシa
ンの関係を求めておいた値を用いt4 更にカールの
強さはアニール処理後の薄膜を直径30mrnの円形に
切り出したときの反り量で評価しt4 第5図に測定
結果を示も 第5図か転 吸引によってカールが弱くな
っているのがわかも またオージエ電子分光分析によっ
て調べた酸化の状態(友 アニール温度が同じであれば
吸引によって変化しなかった また 厚さ20μ八 幅
20cmのポリアミド基板上に真空蒸着法によって膜厚
3 0 0 nmのCoCr層を設けた垂直磁気記録媒
体の表面酸化を目的として、アニール温度300℃及び
280t,. フィルム走行速度lm/分でアニール
処理を行なった場合にも同様の効果が得られた さらに
CoCrの代わりにCoCrNiを用いた場合にも同様
の効果が認められtも発明の効果
以上の様に本発明の薄膜の製造方法によれ(f,アニー
ル処理時に発生する基板幅方向のカールを小さくするこ
とが出来る。The present invention (1) aims to solve the problems of the prior art.Means for solving the problems The present invention provides a method for forming a thin film layer on a long polymer substrate directly or via an underlayer. In a thin film manufacturing method in which the polymer substrate is subsequently heated in the air or in an atmosphere containing an equivalent or higher amount of oxygen without contact with a heat source, the polymer substrate is sucked from both sides in the width direction during the temperature rise treatment. According to the present invention, tension is applied in both the longitudinal direction and the width direction of the substrate during the annealing treatment of the thin film formed on the long polymer substrate. In the following, embodiments of the present invention will be explained with reference to the drawings, but FIG. 1 shows one example of the present invention. Figure 2 shows an example. The difference from Figure 3, which shows a conventional example, is that a suction nozzle 7 is provided in the heated part. Figure 2 shows a cross section of the section A-A' in Figure 1. The polymer substrate 3 is subjected to tension in the width direction by the suction nozzle 7 while passing near the heater 5 consisting of a heat source 9 and a reflection plate 8. Also, various vacuum pumps can be used as the suction means 7. A CoCr layer with a thickness of 250 nm is provided on a polyimide substrate with a thickness of 10 μm and a diameter of 20 cm by vacuum evaporation. In order to oxidize the surface of the magnetic recording medium, an annealing treatment was carried out at an annealing temperature of 320° C. and 300 t, and a film running speed of 1 m/min. An attempt was made to reduce curl by applying tensile strength in the width direction of the substrate using the suction nozzle 7.As a preliminary experiment, the annealing temperature was determined using a thermocouple formed by vapor deposition on the polymer substrate surface on the heater side. The tensile strength in the width direction of the substrate due to the suction nozzle 7 was determined based on the results obtained by calculating the temperature relationship.In addition, the tensile strength in the substrate width direction due to the suction nozzle 7 was determined by preliminary experiments using a strain gauge on the polymer substrate 3.
Furthermore, the curl strength was evaluated by the amount of warpage when the thin film after the annealing treatment was cut into a circle with a diameter of 30 mrn, and the measurement results are shown in Figure 5. The oxidation state, as determined by Augier electron spectroscopy, was not changed by suction as long as the annealing temperature was the same. For the purpose of surface oxidation of a perpendicular magnetic recording medium in which a CoCr layer with a thickness of 300 nm was provided on a substrate by vacuum evaporation, annealing treatment was performed at an annealing temperature of 300 °C and 280 t, and a film running speed of 1 m/min. A similar effect was also obtained when CoCrNi was used instead of CoCr. Curling in the width direction of the substrate that occurs during processing can be reduced.
第1は 第2図は本発明の一実施例にかかる薄膜の製造
方法におけるアニール処理工程の一例を示す正面は 第
3@ 第4図はアニール処理工程の従来例を示す正面&
第5図は本発明の一実施例の薄膜の製造方法に於ける
吸引強度とカールの強さの関係を示すグラフであも
1・・・回転方砥 2・・・巻だしロー/k 3・・
・薄膜が形成された高分子基楓 4・・・ガイドローラ
、 5・・・加熱用ヒー久 6・・・巻き取りロー/k
7・・・吸引ノズノ\ 8・・・反射楓 9・・・
熱風方陳 11・・・昇温ローラ。Figure 1 is a front view showing an example of an annealing process in a thin film manufacturing method according to an embodiment of the present invention. Figure 4 is a front view showing a conventional example of an annealing process.
FIG. 5 is a graph showing the relationship between suction strength and curl strength in the method for manufacturing a thin film according to an embodiment of the present invention.Mode 1...Rotating method 2...Unwinding low/k 3・・・
・Polymer base maple on which a thin film is formed 4... Guide roller, 5... Heater for heating 6... Winding roller/k
7... Suction nozzle \ 8... Reflection maple 9...
Hot wind fan 11...Heating roller.
Claims (4)
て薄膜層を形成した後、前記高分子基板を大気中または
同等以上の酸素を含む雰囲気中で熱源に非接触で昇温処
理する薄膜の製造方法において、昇温処理中に前記高分
子基板をその幅方向の両側から吸引することを特徴とす
る薄膜の製造方法。(1) After forming a thin film layer on a long polymer substrate directly or via an underlayer, the polymer substrate is heated in the atmosphere or in an atmosphere containing an equivalent or higher amount of oxygen without contacting a heat source. A thin film manufacturing method comprising: sucking the polymer substrate from both sides in its width direction during the temperature raising treatment.
する請求項1記載の薄膜の製造方法。(2) The method for producing a thin film according to claim 1, wherein the thin film layer is made of a magnetic material for magnetic recording.
成分とすることを特徴とする請求項1または2記載の薄
膜の製造方法。(3) The method for producing a thin film according to claim 1 or 2, wherein the thin film layer contains Co, Cr, or Co, Cr, and Ni as main components.
イミドからなることを特徴とする請求項1、2または3
記載の薄膜の製造方法。(4) Claim 1, 2 or 3, wherein the material of the polymer substrate is aromatic polyamide or polyimide.
Method of manufacturing the described thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163389A JPH0328372A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163389A JPH0328372A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0328372A true JPH0328372A (en) | 1991-02-06 |
Family
ID=15738896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16163389A Pending JPH0328372A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0328372A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128350A (en) * | 2006-11-21 | 2008-06-05 | Maezawa Kyuso Industries Co Ltd | Stop valve with built-in check valve |
-
1989
- 1989-06-23 JP JP16163389A patent/JPH0328372A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128350A (en) * | 2006-11-21 | 2008-06-05 | Maezawa Kyuso Industries Co Ltd | Stop valve with built-in check valve |
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