JPH0328371A - Production of thin film - Google Patents
Production of thin filmInfo
- Publication number
- JPH0328371A JPH0328371A JP16163289A JP16163289A JPH0328371A JP H0328371 A JPH0328371 A JP H0328371A JP 16163289 A JP16163289 A JP 16163289A JP 16163289 A JP16163289 A JP 16163289A JP H0328371 A JPH0328371 A JP H0328371A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- heating
- cooling
- polymer substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000004642 Polyimide Substances 0.000 claims abstract description 3
- 229920001721 polyimide Polymers 0.000 claims abstract description 3
- 239000004760 aramid Substances 0.000 claims abstract 2
- 229920003235 aromatic polyamide Polymers 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 229920000307 polymer substrate Polymers 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000000137 annealing Methods 0.000 abstract description 15
- 238000004804 winding Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 239000000112 cooling gas Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010952 cobalt-chrome Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は形状の優れた薄膜を形戒するための薄膜の製造
方法に関する
従来の技術
現代社会において薄膜技術の果たす役割は非常に多岐に
わたっていも 薄膜基板材料は機械的特性から高分子フ
イルム等の可とう性基板及びガラス板等の非可とう性基
板に大別でき、基板の機械特性に合った薄膜製造方法が
用いられていも 高分子フィルムの様な可とう性基板を
用いる場合に(上 薄膜の量産方法として連続巻取り方
式を用いることが出来も これは巻出しロールから巻出
されたロール状の高分子基板が走行中にめっき法・スパ
ッタ法・真空蒸着法などによって基板上に薄膜を形成し
た抵 巻取りロールに巻き取る方法で、大量生産に適し
た方法とされていも こうして形威された薄膜(よ 装
飾包装用フィルム・磁気記録媒体をはじめとした多方面
に用いられていも 薄膜の形成法においては薄膜形成後
の内部応力の緩和・表面硬度の向上などを目的としたア
ニールと呼ばれる熱処理が行われることがあん この処
理{上 第2図に示すように巻取り走行系を用いて例え
ば大気中で昇温ローラ9に沿って薄膜形戊済み高分子基
板3を走行させることによって可能であも 昇温ローラ
9を用いたアニール処理の場合は高分子基板3が昇温ロ
ーラ9にふれ始めるとき及び昇温ローラ9からはなれる
ときに急激に熱変形するので皺が発生し易(1 またア
ニール処理後の薄膜の表面性が昇温ローラ9の表面性に
依存するので表面平滑性のよい薄膜を得るには昇温ロー
ラ9の表面もまた平滑であることが必要であも 昇温ロ
ーラ9を用いたこれらの課題を回避する一つの手段とし
て、昇温ローラ9を用いない直接加熱が有効であも 即
ち第3図に示すように薄膜形成済み高分子基板3がガイ
ドローラ4、 4間を走行中に加熱用ヒータ55を用い
て非接触の加熱を行なうことによってアニール処理を行
なうことが出来も
発明が解決しようとする課題
ところがアニール処理によって高分子基板の熱収縮がお
きると薄膜が形戒された高分子基板はカール(反り〉を
おこも カールの程度はアニール温度が高いほど強く、
カールを少なくすることと十分なアニール効果を与える
ことは相反する課題であった
本発明は このような従来技術の課題を解決することを
目的とすも
課題を解決するための手段
本発明は高分子基板上に直接あるいは下地層を介して薄
膜層を形成した後に前記高分子基板を、大気中または同
等以上の酸素を含む雰囲気中で、熱源に非接触の加熱方
法によって昇温する薄膜の製造方法において、前記薄膜
層側から加熱すると同時に前記高分子基板側から冷却す
ることを特徴とする薄膜の製造方法であも
作用
本発明によれば薄膜層側から昇温しでアニールすると同
時に高分子基板側から冷却するので、高分子基板側から
冷却しない場合に比べてカールを小さくすることができ
も
実施例
以下に 本発明の実施例について図面を参照しながら説
明すも
第l図は本発明の実施例を示す図弘 従来例を示す第3
図と異なる点は加熱ヒータ5と対向して冷却ノズル7を
設けたことにあも 加熱ヒータ5としては遠赤外線ヒー
タの他 ハロゲンランプ・レーザなどを用いることがで
きも また 冷却ノズル7からの気流は圧縮機を用いて
発生した清浄空気流とした八 窒素・酸素その他のガス
も用いることができも 気流の温度はアニール温度その
他との兼ね合いで常温でL また冷凍設備を用いて冷気
流としてもよ〜ち 厚さlOμ八 幅20cmのポリイ
ミド基板上に真空蒸着法によって膜厚2 5 0 nm
のC oC r層を設けた垂直磁気記録媒体の表面酸化
を目的として、フィルム走行速度lm/分でアニール処
理を行なっf, 予備実験として加熱ヒータ側の高分
子基板面に蒸着によって熱電対を形威したものを用1.
X.冷却用気流量を変化させたときに熱電対で測定した
温度(アニール温度)を一定とするためのヒータ電力を
求めておき、実際のアニール処理に於ける冷却用気流量
とカールの強さの関係を調べた カールの強さはアニー
ル処理後の薄膜を直径30mmの円形に切り出したとき
の反り量で評価した 第4図にアニール温度300℃及
び320℃に於ける測定結果を示す。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a conventional technology relating to a thin film manufacturing method for forming a thin film with an excellent shape.In modern society, thin film technology plays a very wide variety of roles.Thin film substrates Materials can be roughly divided into flexible substrates such as polymer films and non-flexible substrates such as glass plates based on their mechanical properties. When using a flexible substrate (above), a continuous winding method can be used as a mass production method for thin films. A thin film formed on a substrate by a method such as a vacuum deposition method or a vacuum evaporation method and then wound onto a winding roll is considered to be suitable for mass production. Although it is used in many fields including thin film formation, heat treatment called annealing is sometimes performed after thin film formation for the purpose of relieving internal stress and improving surface hardness. As shown in FIG. 2, it is possible to perform an annealing process using the temperature-raising roller 9 by running the thin film-shaped hollowed polymer substrate 3 along the temperature-raising roller 9 in the atmosphere, for example, using a winding system. In this case, wrinkles are likely to occur because the polymer substrate 3 is rapidly thermally deformed when it begins to touch the temperature-raising roller 9 and when it is separated from the temperature-raising roller 9 (1). Since it depends on the surface properties of the heating roller 9, in order to obtain a thin film with good surface smoothness, the surface of the heating roller 9 must also be smooth. Avoid these problems by using the heating roller 9. Although direct heating without using the temperature raising roller 9 is effective as one means, as shown in FIG. However, the problem to be solved by the present invention is that when the thermal contraction of the polymer substrate occurs due to the annealing treatment, the polymer substrate with the thin film formed will curl ( The higher the annealing temperature, the stronger the curl.
The purpose of the present invention is to solve the problems of the prior art, where reducing curl and providing a sufficient annealing effect are contradictory issues. Production of a thin film by forming a thin film layer on a molecular substrate directly or via a base layer, and then heating the polymer substrate in the atmosphere or in an atmosphere containing an equivalent or higher amount of oxygen by a heating method that does not contact a heat source. According to the present invention, the thin film manufacturing method is characterized in that the thin film layer side is heated and the polymer substrate side is cooled at the same time. Since cooling is performed from the substrate side, curling can be reduced compared to the case where cooling is not performed from the polymer substrate side. Figure 3 shows an example of the conventional example.
The difference from the diagram is that a cooling nozzle 7 is provided opposite the heating heater 5.As the heating heater 5, in addition to a far-infrared heater, a halogen lamp, laser, etc. can be used.Also, airflow from the cooling nozzle 7 The airflow is a clean airflow generated using a compressor.Nitrogen, oxygen, and other gases can also be used.The temperature of the airflow is set at room temperature (L) depending on the annealing temperature and other factors.Also, a cold airflow is generated using a refrigeration equipment. A film with a thickness of 250 nm was formed by vacuum evaporation on a polyimide substrate with a thickness of 10 μm and a width of 20 cm.
In order to oxidize the surface of a perpendicular magnetic recording medium with a CoCr layer, an annealing treatment was performed at a film running speed of 1 m/min.As a preliminary experiment, a thermocouple was formed by vapor deposition on the surface of the polymer substrate on the heater side. 1.
X. Calculate the heater power to keep the temperature measured by the thermocouple (annealing temperature) constant when changing the cooling air flow rate, and calculate the difference between the cooling air flow rate and the curl strength in the actual annealing process. The relationship was investigated. The curl strength was evaluated by the amount of warpage when the annealed thin film was cut into a circular shape with a diameter of 30 mm. Figure 4 shows the measurement results at annealing temperatures of 300°C and 320°C.
第4図か板 気流吹き付けによる冷却によってカールが
弱くなっているのがわかも またオージ工電子分光分析
によって調べた酸化の状態(よ アニール温度が同じで
あれば冷却用気流の吹き付けによって変化しなかっtラ
また 同様の効果が厚さ20μmのポリアミド上に
形成された膜厚300nmのCoCr薄膜の280℃及
び300℃に於けるアニール処理によっても確認され1
,発明の効果
以上の様に本発明の薄膜の製造方法によればアニール処
理時に発生するカールを小さく゜することが出来もFigure 4: It can be seen that the curl is weakened by the cooling caused by air blowing.Also, the oxidation state investigated by electronic electron spectroscopy (Fig. A similar effect was also confirmed by annealing a 300 nm thick CoCr thin film formed on a 20 μm thick polyamide at 280°C and 300°C1.
In addition to the effects of the invention, the thin film manufacturing method of the present invention also makes it possible to reduce curls that occur during annealing.
第1図は本発明にかかる一実施例の薄膜の製造方法にお
けるアニール処理工程の一例を示す正面は 第2図及び
第3図はアニール処理工程の従来例を示す正面は 第4
図は上記本発明にかかる実施例の薄膜の製造方法に於け
る冷却用気流量とカールの強さの関係を示すグラフであ
ム
1・・・回転方砥 2・・・巻だしロー/k 3・・
・薄膜が形成された高分子基K 4・・・ガイドローラ
、 5・・・加熱用ヒー久 6・・・巻き取りロー/t
,, 7・・・冷却ノズ& 8・・・冷却用ガ入
9・・・昇温ローラ。FIG. 1 is a front view showing an example of an annealing process in a thin film manufacturing method according to an embodiment of the present invention; FIGS. 2 and 3 are front views showing a conventional example of an annealing process;
The figure is a graph showing the relationship between the cooling air flow rate and the curl strength in the thin film manufacturing method according to the embodiment of the present invention. 3...
・Polymer group K on which a thin film is formed 4... Guide roller, 5... Heater for heating 6... Winding roller/t
,, 7... Cooling nozzle & 8... Cooling gas inlet
9...Temperature rising roller.
Claims (4)
層を形成した後に前記高分子基板を、大気中または同等
以上の酸素を含む雰囲気中で、熱源に非接触の加熱方法
によって昇温する薄膜の製造方法において、前記薄膜層
側から加熱すると同時に前記高分子基板側から冷却する
ことを特徴とする薄膜の製造方法。(1) After forming a thin film layer on a polymer substrate directly or via a base layer, the temperature of the polymer substrate is raised in the air or in an atmosphere containing an equivalent or higher amount of oxygen using a heating method that does not contact a heat source. A thin film manufacturing method comprising: heating from the thin film layer side and cooling from the polymer substrate side at the same time.
求項1記載の薄膜の製造方法。(2) The method for producing a thin film according to claim 1, characterized in that an air stream is used as the cooling means.
族ポリアミドを用いることを特徴とする請求項1または
2記載の薄膜の製造方法。(3) The method for producing a thin film according to claim 1 or 2, characterized in that polyimide or aromatic polyamide is used as the material of the polymer substrate.
とする請求項1、2または3記載の薄膜の製造方法。(4) The method for producing a thin film according to claim 1, 2 or 3, wherein the thin film is made of a metal or a metal compound.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163289A JPH0328371A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16163289A JPH0328371A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0328371A true JPH0328371A (en) | 1991-02-06 |
Family
ID=15738879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16163289A Pending JPH0328371A (en) | 1989-06-23 | 1989-06-23 | Production of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0328371A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6561884B1 (en) | 2000-08-29 | 2003-05-13 | Applied Materials, Inc. | Web lift system for chemical mechanical planarization |
US7030260B2 (en) | 2002-02-27 | 2006-04-18 | Honeywell International Inc. | Preparation of mixed-halogen halo-silanes |
-
1989
- 1989-06-23 JP JP16163289A patent/JPH0328371A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6561884B1 (en) | 2000-08-29 | 2003-05-13 | Applied Materials, Inc. | Web lift system for chemical mechanical planarization |
US7008303B2 (en) | 2000-08-29 | 2006-03-07 | Applied Materials Inc. | Web lift system for chemical mechanical planarization |
US7030260B2 (en) | 2002-02-27 | 2006-04-18 | Honeywell International Inc. | Preparation of mixed-halogen halo-silanes |
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