JPS60187674A - Manufacture of thin metallic film - Google Patents

Manufacture of thin metallic film

Info

Publication number
JPS60187674A
JPS60187674A JP4360284A JP4360284A JPS60187674A JP S60187674 A JPS60187674 A JP S60187674A JP 4360284 A JP4360284 A JP 4360284A JP 4360284 A JP4360284 A JP 4360284A JP S60187674 A JPS60187674 A JP S60187674A
Authority
JP
Japan
Prior art keywords
substrate
thin film
metal thin
polymer substrate
wrinkles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4360284A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Honda
和義 本田
Ryuji Sugita
龍二 杉田
Hiroshi Nishida
宏 西田
Kyoji Noda
恭司 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4360284A priority Critical patent/JPS60187674A/en
Publication of JPS60187674A publication Critical patent/JPS60187674A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates

Abstract

PURPOSE:To form stably a thin metallic film with no crease on a polymer substrate while preventing the thermal deformation of the substrate by preheating the substrate on the inlet side of a cylindrical can and moving it along the outside of the can. CONSTITUTION:A long-sized polymer substrate 5 of polyethylene terephthalate or the like is moved along the outside of a cylindrical can 6, and a thin metallic film is formed on the substrate 5 by vapor deposition with an evaporating source 10 on which an electron beam 9 is incident. At this time, the substrate 5 is preheated with a roll 18 heated to about 70-110 deg.C at a position close to the inlet side of the can 6 to prevent the sudden thermal deformation of the substrate 5 contacting with the heated can 6. By this method a thin metallic film with no crease can be manufactured on the substrate 5 at a high speed.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は長尺高分子基板上への金属薄膜の製造方法に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method of manufacturing a thin metal film on a long polymer substrate.

従来例の構成とその問題点 金属薄膜の製造方法としては、真空蒸着法、スパッタ法
、めっき法などがあるが、長尺高分子基板」−に生産性
良く優れた金属薄膜を製造する方法としては真空蒸着法
が最も優れている。第1図に真空蒸着法によって長尺j
1分子基板−ヒに金属薄膜を製造゛」る方法の一例を示
す。排気系1によって高真空に排気された真空槽2中で
巻出しロール3より回転方向41こ沿って巻出された高
分子基板5は、キャン(5に沿って走行中にマスク7の
開口部において、電子銃8から電子ヒーム9が入射され
ζいる蒸発源10より金属薄膜の蒸着を受のた後、巻取
りlj−ル11に巻取られる。この方法によれば、長尺
の高分子基板5」二に金属薄膜を生産性良く作製できる
が、蒸着中に受ける熱負荷によって高分子基板5が熱負
けする場合があり、その場合には若干の対策が必要とな
る。この対策として非當に有効であるのが高分子基板に
バイアスを印加する方法である。第2図に基板バイアス
法の一例を示す。第2図で、12はバイアスローラであ
り、これに電圧を印加することにより高分子基板5は茎
着股の形成期1す]から接地されているキャン6に静電
引力ではりつく。そのために蒸着中の熱負荷のほとんど
をキャ゛ン(jに逃がすことができるので、高分子基板
5の熱負けが防げる。
Conventional Structures and Problems There are vacuum evaporation methods, sputtering methods, plating methods, etc. for manufacturing thin metal films, but there is no method for manufacturing excellent metal thin films on long polymer substrates with high productivity. The vacuum evaporation method is the best. Figure 1 shows a long length j made by vacuum evaporation method.
An example of a method for manufacturing a metal thin film on a single molecule substrate is shown below. The polymer substrate 5 unwound along the rotational direction 41 from the unwinding roll 3 in the vacuum chamber 2 evacuated to high vacuum by the exhaust system 1 is exposed to the opening of the mask 7 while traveling along the can (5). In this process, an electron beam 9 is incident from an electron gun 8, and after the metal thin film is deposited from an evaporation source 10, it is wound up on a winding wheel 11. According to this method, a long polymer film is Although it is possible to fabricate a metal thin film on the substrate 5 with high productivity, the polymer substrate 5 may lose heat due to the heat load received during vapor deposition, and in that case, some countermeasures are required. A particularly effective method is to apply a bias to the polymer substrate. An example of the substrate bias method is shown in Figure 2. In Figure 2, 12 is a bias roller, and applying a voltage to it As a result, the polymer substrate 5 sticks to the grounded can 6 due to electrostatic attraction during the formation period of the stem and crotch.As a result, most of the heat load during vapor deposition can be released to the can (j). , heat loss of the polymer substrate 5 can be prevented.

さらに多層構造の金属薄膜を形成する例とし2て、既に
高分子基板5」二に下地層の金属層が形成されている場
合が考えられる。このような場合には、高分子基板5が
キャン6の入口で急激にバイアス電圧によってキャン6
にはりつげられると高分子基板5に亀の甲様のしわが生
じ、蒸着後もこのしわが残る。第3図にこの時のしわの
様子を示す。
Further, as an example of forming a metal thin film having a multilayer structure, a case can be considered in which a metal layer as a base layer has already been formed on the polymer substrate 5''. In such a case, the polymer substrate 5 is suddenly moved by the bias voltage at the entrance of the can 6.
When it is attached to the polymer substrate 5, tortoise shell-like wrinkles are formed on the polymer substrate 5, and these wrinkles remain even after vapor deposition. Figure 3 shows the appearance of wrinkles at this time.

5は高分子基板、13はマージン部分(蒸着されていな
い部分)、14は蒸着部分であり、15が亀の甲様のし
わである。このしわを防くために、第4図に示すよりに
キャン6の入口側にニップローラ24を設げることによ
り、高分子基板5が厚く、かつ低温である場合にはしわ
のない多層構造の金属薄膜が形成される場合もある。し
かし、より効果的な方法としては第5図に示すように蒸
着前のキャン6上にアースローラ16を設りるごとによ
りキャン6上の高分子基板5に途中まではバイアス電圧
が印加されないようにする方法がある。
5 is a polymer substrate, 13 is a margin portion (a portion that is not vapor deposited), 14 is a vapor deposited portion, and 15 is a tortoise shell-like wrinkle. In order to prevent this wrinkle, a nip roller 24 is provided on the inlet side of the can 6 as shown in FIG. A thin metal film may also be formed. However, a more effective method is to install an earth roller 16 on the can 6 before vapor deposition, as shown in FIG. 5, so that the bias voltage is not applied to the polymer substrate 5 on the can 6 halfway. There is a way to do it.

これ乙こよっ−(予め下地の金vA層が形成されていな
い場合とよくイ以た考え方でバイアス電圧の印加が可能
となる。
This makes it possible to apply a bias voltage in a similar way to the case where the underlying gold layer has not been formed in advance.

一方、いくつかの理由、すなわち膜の付着力の向上、カ
ールの防止、あるいは膜特性の向上等のために基板61
J1度を上げる必要のある場合がある。
On the other hand, for several reasons, such as improving film adhesion, preventing curling, or improving film properties, the substrate 6
There are cases where it is necessary to increase the J1 degree.

そのような場合には、蒸着が行なわれるキャン6を加メ
:4シすることによって基板温度を上げることができる
In such a case, the substrate temperature can be raised by changing the can 6 in which the vapor deposition is performed.

しかし、基板温度を上げるために高分子基板の!;(シ
膨張あるいは熱収縮といった熱変形が伴うために新たな
しわが発生ずる。すなわち、第3図や第6図に示したよ
うなしわが基板温度を上げた時に入りやすく、基板走行
方向の張力が比較的弱い場合に6才第3図のような亀の
甲様のしわが、張力が比較的強い場合には第6図のよう
なたてしわが入りやすい。これらのしわが入る原因とし
ては、高分子基板5が急激な熱変形を受げることにより
キャン6上で高分子基板5に弱いしわが入り、この時ノ
シわがバイアス印加Fでの蒸着というプロセスで強調さ
れることが本発明者らが調べた結果はぼ明らかになった
。また、このしわばキャン6および高分子基板5の表面
性が良い場合の力が強く入ることも分った。
However, to raise the substrate temperature of polymer substrate! (New wrinkles occur due to thermal deformation such as expansion or thermal contraction. In other words, wrinkles like those shown in Figures 3 and 6 tend to appear when the substrate temperature is increased, and the tension in the substrate running direction increases. If the tension is relatively weak, turtle shell-like wrinkles like the one shown in Figure 3 will appear when the tension is relatively strong, and if the tension is relatively strong, vertical wrinkles like the one shown in Figure 6 will appear. The present inventors have discovered that weak wrinkles appear in the polymer substrate 5 on the can 6 due to rapid thermal deformation of the molecular substrate 5, and that the wrinkles are accentuated during the vapor deposition process with the bias applied F. The results of the investigation were clear. It was also found that when the surface properties of the wrinkled can 6 and the polymer substrate 5 are good, a strong force is applied.

発明の目的 この発明は加熱された長尺高分子基板上に金属薄膜をし
わなしに製造することを目的とする。
OBJECT OF THE INVENTION The object of the present invention is to produce a metal thin film on a heated elongated polymer substrate without wrinkles.

発明の構成 この発明は加熱昇温された円筒状キャンの周側面に沿っ
て走行中の長尺高分子基板上に真空蒸着法によって金属
薄膜を形成する際にキャンへの入口側近傍で高分子基板
を予め加熱しておくことを特徴とする金属BH3膜の製
造方法であり、これによってキャン入[1での高分子基
板の熱変形を防ぎ、加熱された長尺高分子基板上に金属
薄膜をしわなしに安定に、かつ高速に製造することがで
きる。
Structure of the Invention This invention provides a method for forming a metal thin film by vacuum evaporation on a long polymer substrate running along the peripheral side of a heated cylindrical can. This is a method for manufacturing a metal BH3 film characterized by heating the substrate in advance, thereby preventing thermal deformation of the polymer substrate during canning [1], and forming a metal thin film on the heated long polymer substrate. can be manufactured stably and at high speed without wrinkles.

実施例の説明 第7図に予備加熱法の一例として加熱ローラ1)3を用
いた場合の実施例を示す。高分子基板5として幅100
〜150+u、厚さ20μmのポリエチレンテレソタレ
ート(以−f−’ P E Tと略す)基板5を用い、
キャン温度を90°CとしてNH8,−Fe+J!IJ
(以)’81Pa膜と略す)を基板速度10 m 7分
で真空蒸着法により2000人厚に形成した。加メ:!
10−ラ1)(とキャン6との最小距離は0.1−10
順とした。バイアスローラ12には直流−1o。
DESCRIPTION OF THE EMBODIMENT FIG. 7 shows an example in which a heating roller 1) 3 is used as an example of the preheating method. Width 100 as polymer substrate 5
~150+u, using a polyethylene telesotalate (hereinafter abbreviated as PET) substrate 5 with a thickness of 20 μm,
NH8, -Fe+J! with a can temperature of 90°C! I.J.
(hereinafter abbreviated as '81Pa film) was formed to a thickness of 2000 mm by vacuum evaporation at a substrate speed of 10 m for 7 minutes. Kame:!
10-la 1) (the minimum distance between can 6 is 0.1-10
In order. The bias roller 12 is supplied with DC -1o.

■を印加した。また加熱ローラ18の直径は100關、
キャン6の直径は500III11である。加熱ローラ
18を室温とし7て装着を行なうと第3図あるいは第6
図に示したようなしわが発生したが、加熱ローラ18の
温度を70〜110’cとするとしわは発生しなかった
。しかし、厚さ12μmのP ET基扱を用いた場合に
は、この方法でばしゎは減少するものの完全にはなくな
らなかった。この時には第8図に示すように第1加熱ロ
ーラ19と第2加熱し2−ラ20を用いて第1加熱ロー
ラ19を約6 (1°c、第2加熱r:r−ラ20を約
80 ℃とすることによりしわの発生を防くことができ
た。なお、第1.第2加メ′ハじ1−ラ19.20の直
径はともに100 +uであり、両者の間隔ばl〜5關
とした。
■ was applied. The diameter of the heating roller 18 is 100 mm.
The diameter of the can 6 is 500III11. If the heating roller 18 is set to room temperature 7 and installed, the image shown in Fig. 3 or 6 will be shown.
Although wrinkles as shown in the figure were generated, no wrinkles were generated when the temperature of the heating roller 18 was set to 70 to 110'C. However, when using a PET substrate with a thickness of 12 μm, although this method reduced the brightness, it did not completely eliminate it. At this time, as shown in FIG. By setting the temperature to 80°C, it was possible to prevent wrinkles from forming.The diameters of the first and second joints 19 and 20 were both 100 + u, and the distance between them was 1~ There were 5 questions.

また耐熱性基板を用いた場合として厚さ10〜20 p
 mのポリイミド基板を用い、キャン温度を2oo′c
として81Pa膜を基板速度10m/分で真空蒸着法に
より2000人厚に形成する際に第7図に示す構成で加
熱ローラ18を室温とすると第3図あるいは第6図に示
したようなしわが発生したが、加熱ローラ18の温度を
18o°c〜220℃にするとしわは発生しなかった。
In addition, when using a heat-resistant substrate, the thickness is 10 to 20 p.
Using a polyimide substrate of m, the can temperature is 2oo'c.
When an 81 Pa film is formed to a thickness of 2000 mm by vacuum evaporation at a substrate speed of 10 m/min with the configuration shown in FIG. 7 and the heating roller 18 is at room temperature, wrinkles as shown in FIG. 3 or 6 occur. However, when the temperature of the heating roller 18 was set to 18°C to 220°C, no wrinkles were generated.

つぎに既に長尺高分子基板5」二に金属薄膜層が形成さ
れた上にさらに金属薄膜を真空蒸着法で形成する場合の
例として、Ti下地」二に81Pa薄肋を形成する場合
について述べる。なお、81Paの下地層としてTi薄
股を用いるとPaFiの結晶配向性が良くなる。厚さ5
0μmのP T’、 T基板上にTi下地を500人厚
形彫成した上に第9図の方法によって8JPa薄膜層を
2000人厚に形成した。基板速度は10m/分、キャ
ン温度は90℃とした。加熱ローラ18を室温とすると
第6図のようなしわが発生したが加熱ローラ18を70
’C−110℃とすることによりしわの発生が防げた。
Next, as an example of forming a metal thin film by vacuum evaporation on a metal thin film layer already formed on the long polymer substrate 5'2, we will describe the case where 81 Pa thin ribs are formed on the Ti base layer'2. . Note that when a thin Ti layer is used as the 81 Pa underlayer, the crystal orientation of PaFi is improved. thickness 5
On a 0 μm P T', T substrate, a Ti underlayer was formed to a thickness of 500 μm, and then an 8 JPa thin film layer was formed to a thickness of 2000 μm by the method shown in FIG. The substrate speed was 10 m/min, and the can temperature was 90°C. When the heating roller 18 was brought to room temperature, wrinkles appeared as shown in FIG.
The generation of wrinkles was prevented by setting the temperature to -110°C.

厚さJ2μ川のPET基板を用いて同様にTi下地を5
00人厚形彫成した上に81Paを形成する場合には第
9図の方法ではしわが減少はしたが完全に消えなかった
。そこで、第10図に示すように第1加熱1:J−ラ1
1)と第2加熱ローラ20を用いて第1加熱1コーラI
9を約60℃、第2加熱ローラ20を約80℃とすると
しわが完全に消えた。また耐熱性基板として厚さ20μ
mのポリイミド基板を用い、予めTt下地を500人厚
形成形成した上にキャン温度を200℃として81Pa
膜を基板速度10m/分で真空蒸着法により2000人
厚に形成した。この時に第9図に示す構成で加熱ローラ
】8を室温とすると第3図あるいは第6図に示したよう
なしわが発生したが、加熱ローラ18の温度を180°
C〜220°Cにするとしわは発生しなかった。
Similarly, using a PET substrate with a thickness of J2μ, a Ti base layer was coated with 5.
When 81 Pa was formed on a 0.00 mm thick mold, the method shown in FIG. 9 reduced wrinkles but did not completely eliminate them. Therefore, as shown in FIG.
1) and the second heating roller 20 to first heat 1 cola I
9 and the second heating roller 20 to about 80° C., the wrinkles completely disappeared. Also, as a heat-resistant substrate, the thickness is 20μ.
Using a polyimide substrate with a thickness of 500 mm, a Tt undercoat was formed in advance to a thickness of 500 mm, and the can temperature was set to 200 °C and 81 Pa.
A film was formed to a thickness of 2000 by vacuum evaporation at a substrate speed of 10 m/min. At this time, when heating roller 8 was set at room temperature with the configuration shown in FIG. 9, wrinkles as shown in FIG. 3 or FIG.
No wrinkles occurred when the temperature was between 220°C and 220°C.

つぎに、予備加熱の他の例として光加熱を用いた場合の
実施例を第11図に示す。第11図で、21は光加熱装
置であり、これによって高分子基板5はキャ76に接し
始める前から加熱されるためにキャン6に接する際に高
分子基板5が急激な熱変形を受けることがなく、しわの
発生を防げる。
Next, FIG. 11 shows an example in which optical heating is used as another example of preheating. In FIG. 11, reference numeral 21 denotes a light heating device, which heats the polymer substrate 5 even before it comes into contact with the can 76, so that the polymer substrate 5 is subjected to rapid thermal deformation when it comes into contact with the can 6. There is no wrinkles, preventing the appearance of wrinkles.

光加熱装置21の例を第12図に示す。第12図で、内
側を鏡面仕上げしたランプケース22中にハロゲンラン
プ23が配置されており、これによって高分子基板5を
加熱できる。下地層が形成されていない無色透明の高分
子基板を用いた場合には光加熱の効果は得られなかった
。しかし5、例えば厚さ20μmのポリイミド基板を用
いて、キャン温度を200℃として81Pa膜を基板速
度10m/分で形成する際に第11図の方法を用いると
光加熱装置21への投入電力ゼロでは第3図あるいは第
6図に示したようなしわが発生したが、基板幅1cm当
たり300Wの電力を光加熱装置21に投入することに
よりしわの発生が防げた。光加熱装置21と高分子基板
5との距離は10mmとした。
An example of the optical heating device 21 is shown in FIG. In FIG. 12, a halogen lamp 23 is placed in a lamp case 22 whose inside is mirror-finished, and the polymer substrate 5 can be heated by this. When a colorless and transparent polymer substrate on which a base layer was not formed was used, no optical heating effect was obtained. However, if the method shown in FIG. 11 is used to form an 81 Pa film at a substrate speed of 10 m/min at a can temperature of 200° C. using a polyimide substrate with a thickness of 20 μm, for example, the power input to the optical heating device 21 is zero. In this case, wrinkles as shown in FIG. 3 or FIG. 6 were generated, but the generation of wrinkles was prevented by inputting a power of 300 W per 1 cm of substrate width to the optical heating device 21. The distance between the optical heating device 21 and the polymer substrate 5 was 10 mm.

また高分子基板5上に既に下地層が形成されているもの
を基板としてて用いる場合には、第13図に示した構成
が適していた。例として第13図の構成で厚さ50μm
のPET基板上にTi下地を5 f) 0形厚に形成し
た上に基板速度10m/分キャン温度90℃として81
Pa薄膜層を2000人厚に形影成した。光加熱装置2
1への投入電力ゼロでは第6図のようなしわが発生した
が基板幅1cm当たり40Wの電力を光加熱装置21に
投入することによりしわの発生が防げた。
Further, when a polymer substrate 5 on which a base layer has already been formed is used as a substrate, the configuration shown in FIG. 13 is suitable. For example, in the configuration shown in Figure 13, the thickness is 50 μm.
A Ti base layer was formed on a PET substrate with a thickness of 5 f) at a substrate speed of 10 m/min and a scan temperature of 90°C.
A Pa thin film layer was formed to a thickness of 2000 mm. Light heating device 2
When zero power was applied to the substrate 1, wrinkles as shown in FIG. 6 occurred, but by applying 40 W of power per 1 cm of substrate width to the optical heating device 21, wrinkles were prevented from occurring.

発明の効果 この発明によれば、加熱された長尺高分子基板上に金属
薄膜をしわなしにかつ高速に製造することができる。
Effects of the Invention According to the present invention, a metal thin film can be produced without wrinkles and at high speed on a heated long polymer substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図、第4図および第5図はそれぞれ連続巻
取真空蒸着による金属薄膜の製造方法の従来例を示す説
明図、第3図および第6図は従来例で問題となるしわを
示す説明図、第7図ないし第13図はこの発明の実施例
を示す説明図である。 l・・・排気系、2・・・真空槽、3・・・巻出しロー
ル、4・・・回転方向、5・・・高分子基板、6・・・
キャン、7・・・マスク、8・・・電子銃、9・・・電
子ビーム、10・・・蒸発源、■l・・・巻取りロール
、12・・・バイアスローラ、13・・・マージン部分
、14・・・蒸着部分、15・・・亀の子種のしわ、1
6・・・アース[I−ラ、17・・・たてしわ、18・
・・加熱ローラ、19・・・第1加熱ローラ、20・・
・第2加熱ローラ、21・・・光加熱装置、22・・・
ランプケース、23・・・ハロゲンランプ、24・・・
ニップローラ 第1図 第2図 第3図 第4図 第5図 第6図 第7図 第8図 第9図 第10図 第11図 第12図
Figures 1, 2, 4 and 5 are explanatory diagrams respectively showing conventional examples of the method for producing metal thin films by continuous winding vacuum evaporation, and Figures 3 and 6 are conventional examples with problems. 7 to 13 are explanatory diagrams showing wrinkles, and FIGS. 7 to 13 are explanatory diagrams showing embodiments of the present invention. l... Exhaust system, 2... Vacuum chamber, 3... Unwinding roll, 4... Rotation direction, 5... Polymer substrate, 6...
Can, 7... Mask, 8... Electron gun, 9... Electron beam, 10... Evaporation source, ■l... Winding roll, 12... Bias roller, 13... Margin Part, 14... Vapor deposition part, 15... Turtle seed wrinkles, 1
6...Earth [I-Ra, 17...Vertical wrinkles, 18.
... Heating roller, 19... First heating roller, 20...
- Second heating roller, 21... optical heating device, 22...
Lamp case, 23...Halogen lamp, 24...
Nip roller Fig. 1 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. 6 Fig. 7 Fig. 8 Fig. 9 Fig. 10 Fig. 11 Fig. 12

Claims (1)

【特許請求の範囲】 ill 加g465f温された円筒状キャンの周面に沿
って走行させる長尺高分子基板を前記円筒状キャンへの
入11側近傍で予備加熱する工程と、前記円筒状キャン
の周面に沿って走行中の前記長尺高分子基板上に真空蒸
着法によって金属薄膜を形成する」二程とを含む金属薄
膜の製造方法。 (2)長尺高分子基板として長尺基板上に予め下地金属
層が形成されたものを用いる特許請求の範囲第(11項
記載の金属薄膜の製造方法。 (3) 予備加熱の手段として加熱ローラを用いる特許
請求の範囲第f1.1項または第(2)項記載の金属薄
膜の製造方法。 (4)加熱ローラを複数段として長尺高分子基板を段階
的に予備加熱する特許請求の範囲第(3)項記載の金属
薄膜の製造方法。 (5) 円筒状キャンに最も近い加熱ローラと前記円筒
状キャンとの距離を1OL111以下とする特許請求の
範囲第(3)項のいずれか1項または第(4)項記載の
金属薄膜の製造方法。 (6)円筒状キャンに最も近い加熱ローラと前記円筒状
キャンとの温度差を±20度以内にする特許請求の範囲
第(3)項のいずれが1項または第(4)項記載の金属
薄膜の製造方法。 (7)予備加熱の手段として光加熱を利用する特許請求
の範囲第(])項または第(2)項記載の金属薄膜の製
造方法。 (8) 光加熱の光源としてハロゲンランプを使用する
特許請求の範囲第(7)項記載の金属薄膜の製造方法。
[Scope of Claims] ill A step of preheating a long polymer substrate, which is caused to run along the circumferential surface of a cylindrical can that has been heated to an additional g465f, near the entrance 11 side of the cylindrical can; 2. Forming a metal thin film on the elongated polymer substrate running along the circumferential surface of the long polymer substrate by vacuum evaporation. (2) A method for manufacturing a metal thin film according to claim 11, in which a long polymer substrate on which a base metal layer is previously formed is used. (3) Heating as a means of preheating. A method for producing a metal thin film according to claim f1.1 or claim (2) using a roller. (4) A method of manufacturing a metal thin film according to claim f1.1 or claim (2) using a roller. A method for producing a metal thin film according to claim 3. (5) Any one of claim 3, wherein the distance between the heating roller closest to the cylindrical can and the cylindrical can is 1OL111 or less. The method for manufacturing a metal thin film according to item 1 or item (4). ) The method for manufacturing a metal thin film according to claim 1 or (4). (7) The method of manufacturing a metal thin film according to claim 1 or (4). (8) The method for manufacturing a metal thin film according to claim (7), wherein a halogen lamp is used as a light source for optical heating.
JP4360284A 1984-03-07 1984-03-07 Manufacture of thin metallic film Pending JPS60187674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4360284A JPS60187674A (en) 1984-03-07 1984-03-07 Manufacture of thin metallic film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4360284A JPS60187674A (en) 1984-03-07 1984-03-07 Manufacture of thin metallic film

Publications (1)

Publication Number Publication Date
JPS60187674A true JPS60187674A (en) 1985-09-25

Family

ID=12668362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4360284A Pending JPS60187674A (en) 1984-03-07 1984-03-07 Manufacture of thin metallic film

Country Status (1)

Country Link
JP (1) JPS60187674A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277463A (en) * 1985-09-30 1987-04-09 Sumitomo Bakelite Co Ltd Vacuum roll coater for heat resistant resin film
JP2008081820A (en) * 2006-09-28 2008-04-10 Sumitomo Electric Ind Ltd Film deposition system
CN109392251A (en) * 2017-08-10 2019-02-26 株式会社藤仓 The manufacturing method of conductive layer stacked film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6277463A (en) * 1985-09-30 1987-04-09 Sumitomo Bakelite Co Ltd Vacuum roll coater for heat resistant resin film
JP2008081820A (en) * 2006-09-28 2008-04-10 Sumitomo Electric Ind Ltd Film deposition system
CN109392251A (en) * 2017-08-10 2019-02-26 株式会社藤仓 The manufacturing method of conductive layer stacked film
CN109392251B (en) * 2017-08-10 2020-01-31 株式会社藤仓 Method for producing conductive layer laminated film

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