JPH0328052B2 - - Google Patents
Info
- Publication number
- JPH0328052B2 JPH0328052B2 JP56069012A JP6901281A JPH0328052B2 JP H0328052 B2 JPH0328052 B2 JP H0328052B2 JP 56069012 A JP56069012 A JP 56069012A JP 6901281 A JP6901281 A JP 6901281A JP H0328052 B2 JPH0328052 B2 JP H0328052B2
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- alignment
- alignment mark
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 5
- -1 quinone azide compound Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56069012A JPS57184220A (en) | 1981-05-08 | 1981-05-08 | Protective method for conforming mark with eye in manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56069012A JPS57184220A (en) | 1981-05-08 | 1981-05-08 | Protective method for conforming mark with eye in manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57184220A JPS57184220A (en) | 1982-11-12 |
| JPH0328052B2 true JPH0328052B2 (enrdf_load_stackoverflow) | 1991-04-17 |
Family
ID=13390244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56069012A Granted JPS57184220A (en) | 1981-05-08 | 1981-05-08 | Protective method for conforming mark with eye in manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57184220A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6083129B2 (ja) * | 2012-04-27 | 2017-02-22 | 富士電機株式会社 | 半導体装置の製造方法および製造装置 |
-
1981
- 1981-05-08 JP JP56069012A patent/JPS57184220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57184220A (en) | 1982-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4751169A (en) | Method for repairing lithographic transmission masks | |
| US20040005516A1 (en) | Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer | |
| EP0037708B1 (en) | Method of forming patterns | |
| US6406818B1 (en) | Method of manufacturing photomasks by plasma etching with resist stripped | |
| JPH05127369A (ja) | レジスト材料 | |
| JPH0122728B2 (enrdf_load_stackoverflow) | ||
| US4610948A (en) | Electron beam peripheral patterning of integrated circuits | |
| JP2910157B2 (ja) | フオトレジストコントラストの最適化方法 | |
| JP2546690B2 (ja) | 電子ビーム近接効果補償方法 | |
| JPH0328052B2 (enrdf_load_stackoverflow) | ||
| JPH0219970B2 (enrdf_load_stackoverflow) | ||
| US6492094B1 (en) | Lithography for fast processing of large areas utilizing electron beam exposure | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| JPS6358829A (ja) | 電子線ビ−ムによるパタ−ン形成方法 | |
| JPH06110214A (ja) | レジストパターンの形成方法 | |
| KR100496815B1 (ko) | 화학적 팽창 공정을 이용한 반도체 소자 제조방법 | |
| JPH0954438A (ja) | フォトレジストパターン及びその形成方法 | |
| JP2506637B2 (ja) | パタ−ン形成方法 | |
| JPS62241338A (ja) | パタ−ン形成方法 | |
| JPS63182817A (ja) | 現像処理方法 | |
| JPH064576Y2 (ja) | ウエハ周辺露光装置 | |
| JPS588131B2 (ja) | 半導体装置の製造方法 | |
| JPH069487Y2 (ja) | ウェハ周辺露光装置 | |
| JPH0644550B2 (ja) | 半導体装置の製造方法 | |
| JPH01258420A (ja) | マークの保護方法 |