JPH03264140A - Method for cutting lead of semiconductor device - Google Patents

Method for cutting lead of semiconductor device

Info

Publication number
JPH03264140A
JPH03264140A JP9063125A JP6312590A JPH03264140A JP H03264140 A JPH03264140 A JP H03264140A JP 9063125 A JP9063125 A JP 9063125A JP 6312590 A JP6312590 A JP 6312590A JP H03264140 A JPH03264140 A JP H03264140A
Authority
JP
Japan
Prior art keywords
lead
cutting
cut
semiconductor device
cut surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9063125A
Other languages
Japanese (ja)
Other versions
JPH0832348B2 (en
Inventor
Saonori Hieda
稗田 佐百規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2063125A priority Critical patent/JPH0832348B2/en
Publication of JPH03264140A publication Critical patent/JPH03264140A/en
Publication of JPH0832348B2 publication Critical patent/JPH0832348B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Shearing Machines (AREA)
  • Wire Processing (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the reliability in quality by imparting such a plastic deforming force that the cut face of a lead subjected to an external plating treatment has a slope having a grade descending toward the front end part of the lead to the lead at the time of cutting the above-mentioned lead by means of a cutting die. CONSTITUTION:The semiconductor device having the lead 11 for external connection which is previously subjected to the external plating treatment is mounted on a receiving die 4. This lead 11 is then cut by the cutting die 12. Such plastic deforming force which the cut surface 11a of the lead has the slope having the grade descending toward the front end of the lead is imparted to the lead 11, by which the lead is cut. Since plating 1 can be stuck to the cut surface 11a of the lead 11 at the time of cutting of the lead, the cut surface 11a of the lead 11 can be coated with the plating 1 and the solder adhesiveness of the ensuring stage is assured. An increase in electric resistance, a decrease in joining strength, corrosion of the cut surface or the generation of a appearance defect is prevented in this way and the reliability in quality is improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、リードの切断に使用する半導体装置のり一部
カット方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cutting part of semiconductor device glue used to cut leads.

〔従来の技術〕[Conventional technology]

従来、この種の半導体装置のリードカット方法は、次に
示す手順を経て行われる。すなわち、第2図に示すよう
にめっきlによって外装処理が施された外部接続用のり
−ド2を有する半導体装置(図示せず)を受けダイ4上
に載置し、次にこの半導体装置(図示せず)のり一部2
を上下方向に昇降するカットダイ5によって切断するの
である。
Conventionally, a lead cutting method for this type of semiconductor device is performed through the following steps. That is, as shown in FIG. 2, a semiconductor device (not shown) having an external connection glue 2 which has been subjected to an exterior treatment with plating is placed on a receiving die 4, and then this semiconductor device ( (not shown) Glue part 2
The cutting die 5 moves up and down in the vertical direction.

この場合、切断時にはカットダイ5を上方から下方に向
かって垂直に下降させる。なお、リード2の切断面2a
には、切断時にだれによってめっき1が付着する。
In this case, during cutting, the cutting die 5 is vertically lowered from above to below. Note that the cut surface 2a of the lead 2
Plating 1 adheres to the surface due to dripping during cutting.

この後、リード2には基板実装用の半田が付着される。After this, solder for board mounting is attached to the leads 2.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、従来の半導体装置のリードカット方法におい
ては、リード2の切断面2aがリード突出方向に対して
垂直な切断面となるものであるため、この切断面2aに
めっき1が十分に付着せず、リード切断面の一部が外部
に露呈されていた。この結果、次工程においてリード2
の一部に半田が付着せず、電気抵抗が大きくなったり、
接合強度が低下したり、リード切断面が腐蝕したり、あ
るいは外観不良が発生したりして品質上の信頼性が低下
するという問題があった。
By the way, in the conventional lead cutting method for semiconductor devices, the cut surface 2a of the lead 2 is a cut surface perpendicular to the lead protrusion direction, so the plating 1 does not adhere sufficiently to the cut surface 2a. , a part of the lead cut surface was exposed to the outside. As a result, in the next process, lead 2
The solder may not adhere to some parts of the board, and the electrical resistance may increase.
There have been problems in that the bonding strength is reduced, the lead cut surface is corroded, or the appearance is defective, resulting in a reduction in quality reliability.

本発明はこのような事情に鑑みてなされたもので、リー
ドにおける電気抵抗の増大、接合強度の低下、切断面の
腐蝕あるいは外観不良の発生を防止することができ、も
って品質上の信頼性を向上させることができる半導体装
置のリードカット方法を提供するものである。
The present invention was developed in view of the above circumstances, and can prevent increases in electrical resistance in leads, decreases in bonding strength, corrosion of cut surfaces, and appearance defects, thereby improving quality reliability. The present invention provides a lead cutting method for a semiconductor device that can be improved.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る半導体装置のリードカフ)方法は、予め外
装めっき処理が施された外部接続用のリードを有する半
導体装置を受けダイ上に載置し、次にこの半導体装置の
リードをカントダイによって切断する方法であって、リ
ードに対してリード切断面がリード先端部に向かって下
る勾配をもつ傾斜面となるような塑性変形力を切断時に
付与するものである。
A semiconductor device lead cuff method according to the present invention includes placing a semiconductor device having external connection leads that have been subjected to an exterior plating process on a receiving die, and then cutting the leads of this semiconductor device with a canting die. In this method, a plastic deformation force is applied to the lead during cutting so that the lead cutting surface becomes an inclined surface having a slope downward toward the lead tip.

〔作 用〕[For production]

本発明においては、リード切断時にリードの切断面に外
装処理用のめっきを付着させることができる。
In the present invention, plating for exterior treatment can be attached to the cut surface of the lead when cutting the lead.

〔実施例〕〔Example〕

以下、本発明の槽底等を図に示す実施例によって詳細に
説明する。
EMBODIMENT OF THE INVENTION Hereinafter, the tank bottom etc. of this invention will be explained in detail by the Example shown in the figure.

第1図は本発明に係る半導体装置のリードカット方法を
説明するための断面図で、同図において第2図と同一の
部材については同一の符号を付し、詳細な説明は省略す
る。同図において、符号11で示す外部接続用のリード
の切断面11aは、封止樹脂(図示せず)の側から先端
部に向かってリード厚が薄くなるような傾斜面によって
形成されている。すなわち、このリード11の傾斜面は
、リード先端部に向かって下る勾配をもつのである。
FIG. 1 is a cross-sectional view for explaining a lead cutting method for a semiconductor device according to the present invention. In the same figure, the same members as in FIG. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the figure, a cut surface 11a of an external connection lead indicated by reference numeral 11 is formed by an inclined surface such that the lead thickness decreases from the side of the sealing resin (not shown) toward the tip. That is, the inclined surface of this lead 11 has a slope that descends toward the tip of the lead.

12は前記リード11を切断するカットダイで、前記受
けダイ4の上方に昇降自在に設けられている。このカッ
トダイ12の先端部は、前記リード11の切断面11a
に適合する形状に形成されている。
12 is a cutting die for cutting the lead 11, and is provided above the receiving die 4 so as to be movable up and down. The tip of this cut die 12 is connected to the cut surface 11a of the lead 11.
It is formed in a shape that fits.

次に、本発明の一実施例である半導体装置のリードカッ
ト方法について説明する。
Next, a lead cutting method for a semiconductor device, which is an embodiment of the present invention, will be described.

すなわち、リードカットは、予め外装めっき処理が施さ
れた外部接続用のリード11を有する半導体装置(図示
せず)を受けダイ4上に載置し、次にこの半導体装置(
図示せず)のリード11をカットダイ12によって切断
する方法であって、リード11にリード切断面11aが
リード先端部に向かって下る勾配をもつ傾斜面になるよ
うな塑性変形力を付与することにより行われる。この場
合、リード切断時にはカットダイ12を上方から下方に
向かって垂直に下降させる。
That is, lead cutting is performed by placing a semiconductor device (not shown) on a receiving die 4 having external connection leads 11 that have been previously subjected to exterior plating treatment, and then placing the semiconductor device (
This is a method of cutting a lead 11 (not shown) using a cut die 12, by applying a plastic deformation force to the lead 11 so that the lead cutting surface 11a becomes an inclined surface with a slope downward toward the lead tip. It will be done. In this case, when cutting the lead, the cutting die 12 is vertically lowered from above to below.

この後、リード11には基板接続用の半田が付着される
Thereafter, solder for board connection is attached to the leads 11.

したがって、本実施例においては、リード切断時にリー
ド11の切断面11aにめっき1を付着させることがで
きるから、めっき1によってり一部11の切断面11a
を覆うことができ、次工程におけるリード11に対する
半田付着を十分に保証することができる。
Therefore, in this embodiment, since the plating 1 can be attached to the cut surface 11a of the lead 11 when cutting the lead, the plating 1 can be applied to the cut surface 11a of the part 11.
This can fully ensure solder adhesion to the leads 11 in the next step.

なお、本実施例においては、カットダイ5を垂直に下降
させることによりリード切断面11aを傾斜させる例を
示したが、本発明はこれに限定されるものではなく、例
えばカントダイ12の下降方向を変更しても実施例と同
様の切断面11aとすることができる。すなわち要する
に、本発明はリード切断面11aをリード先端部に向か
って下る勾配をもつ傾斜面とすることにより、リード切
断面11aにめっき1を付着させることができればよい
のである。
Although this embodiment shows an example in which the lead cutting surface 11a is inclined by lowering the cut die 5 vertically, the present invention is not limited to this, and for example, the lowering direction of the cut die 12 may be changed. However, the same cut surface 11a as in the embodiment can be obtained. In other words, in the present invention, it is sufficient that the plating 1 can be attached to the lead cut surface 11a by forming the lead cut surface 11a into an inclined surface that slopes downward toward the lead tip.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、予め外装めっき処
理が施された外部接続用のリードを有する半導体装置を
受けダイ上に載置し、次にこの半導体装置のリードをカ
ットダイによって切断する方法であって、リードにリー
ド切断面がリード先端部に向かって下る勾配を傾斜面と
なるような塑性変形力を切断時に付与するので、リード
切断時にリードの切断面に外装処理用のめっきを付着さ
せ、このめっきによってリードの切断面を覆うことがで
きる。したがって、次工程におけるリードに対する半田
付着を十分に保証することができるから、リードにおけ
る電気抵抗の増大、接合強度の低下、切断面の腐蝕ある
いは外観不良の発生を防止することができ、品質上の信
頼性を向上させることができる。
As explained above, according to the present invention, a semiconductor device having external connection leads that have been subjected to exterior plating treatment in advance is placed on a receiving die, and then the leads of this semiconductor device are cut by a cutting die. Since a plastic deformation force is applied to the lead during cutting so that the lead cut surface slopes downward toward the lead tip, plating for exterior treatment is applied to the cut surface of the lead when cutting the lead. This plating can cover the cut surface of the lead. Therefore, it is possible to sufficiently guarantee solder adhesion to the leads in the next process, and it is possible to prevent an increase in electrical resistance in the leads, a decrease in bonding strength, corrosion of the cut surface, or occurrence of poor appearance. Reliability can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る半導体装置のリードカット方法を
説明するための断面図、第2図は従来の半導体装置のリ
ードカット方法を説明するための断面図である。 1・・・・めっき、4・・・・受けダイ、11・・・・
リード、lla・・・・切断面、12・・・・カットダ
イ。 代  理  人  大 岩 増 雄 12: カヅトタ〆
FIG. 1 is a sectional view for explaining a lead cutting method for a semiconductor device according to the present invention, and FIG. 2 is a sectional view for explaining a conventional lead cutting method for a semiconductor device. 1...Plating, 4...Receiving die, 11...
Lead, lla...cutting surface, 12...cutting die. Deputy Masuo Oiwa 12: Kazutota〆

Claims (1)

【特許請求の範囲】[Claims] 予め外装めっき処理が施された外部接続用のリードを有
する半導体装置を受けダイ上に載置し、次にこの半導体
装置のリードをカットダイによって切断する方法であっ
て、前記リードに対してリード切断面がリード先端部に
向かって下る勾配をもつ傾斜面となるような塑性変形力
を切断時に付与することを特徴とする半導体装置のリー
ドカット方法。
A method in which a semiconductor device having leads for external connection that have been previously subjected to exterior plating treatment is placed on a receiving die, and then the leads of this semiconductor device are cut with a cut die, and the leads are cut with respect to the leads. A method for cutting leads for a semiconductor device, characterized in that a plastic deformation force is applied during cutting so that the surface forms an inclined surface with a slope descending toward the tip of the lead.
JP2063125A 1990-03-14 1990-03-14 Lead cutting method for semiconductor device Expired - Fee Related JPH0832348B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2063125A JPH0832348B2 (en) 1990-03-14 1990-03-14 Lead cutting method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2063125A JPH0832348B2 (en) 1990-03-14 1990-03-14 Lead cutting method for semiconductor device

Publications (2)

Publication Number Publication Date
JPH03264140A true JPH03264140A (en) 1991-11-25
JPH0832348B2 JPH0832348B2 (en) 1996-03-29

Family

ID=13220243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2063125A Expired - Fee Related JPH0832348B2 (en) 1990-03-14 1990-03-14 Lead cutting method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0832348B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033943A (en) * 2008-07-30 2010-02-12 Yazaki Corp Method of manufacturing connector terminal, and connector terminal
JP2013215742A (en) * 2012-04-05 2013-10-24 Eiko Yamada Method of manufacturing slab for solvent cored welding wire
JP2015153913A (en) * 2014-02-14 2015-08-24 セイコーインスツル株式会社 Resin sealed type semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010033943A (en) * 2008-07-30 2010-02-12 Yazaki Corp Method of manufacturing connector terminal, and connector terminal
JP2013215742A (en) * 2012-04-05 2013-10-24 Eiko Yamada Method of manufacturing slab for solvent cored welding wire
JP2015153913A (en) * 2014-02-14 2015-08-24 セイコーインスツル株式会社 Resin sealed type semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0832348B2 (en) 1996-03-29

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