JPH03263356A - Cap of package for semiconductor device use - Google Patents
Cap of package for semiconductor device useInfo
- Publication number
- JPH03263356A JPH03263356A JP2249374A JP24937490A JPH03263356A JP H03263356 A JPH03263356 A JP H03263356A JP 2249374 A JP2249374 A JP 2249374A JP 24937490 A JP24937490 A JP 24937490A JP H03263356 A JPH03263356 A JP H03263356A
- Authority
- JP
- Japan
- Prior art keywords
- package
- cap
- thin sheet
- thin
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims description 7
- 238000007751 thermal spraying Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000008602 contraction Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000005304 joining Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005219 brazing Methods 0.000 description 4
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010289 gas flame spraying Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置用パッケージのキャップに関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a cap for a package for a semiconductor device.
（従来の技術）
半導体装置には、半導体素子収納用パッケージに半導体
素子を搭載して金属製キャップにより封止するものがあ
る。その際のキャップ封止には、キャップをパッケージ
の封止面にろう付け、はんだ付け、レーザー溶接等によ
って接合するようにしている。(Prior Art) Some semiconductor devices include a semiconductor device mounted in a semiconductor device storage package and sealed with a metal cap. To seal the cap at that time, the cap is joined to the sealing surface of the package by brazing, soldering, laser welding, or the like.
（発明が解決しようとする課題）
金属製キャップを上記のようにろう付け、はんだ付けに
よりパッケージに接合する場合には、パッケージ、ろう
材あるいははんだ、およびキャップを所定治具に組み込
んで炉中で全体を加熱して行う。したがって、その際の
加熱による熱膨張、および冷却による熱収縮はパッケー
ジ、キャップ共に同時に起きるので、両者の熱膨張係数
がほぼ同じであれば、冷却後熱収縮の差異により応力が
残留するという不具合はそれ程生じない。(Problem to be Solved by the Invention) When joining a metal cap to a package by brazing or soldering as described above, the package, brazing material or solder, and cap are assembled in a prescribed jig and placed in a furnace. Heat the whole thing. Therefore, thermal expansion due to heating and thermal contraction due to cooling occur simultaneously for both the package and the cap, so if the coefficients of thermal expansion of both are approximately the same, the problem of residual stress due to the difference in thermal contraction after cooling will not occur. It doesn't happen that much.
しかしながら、キャップをレーザー溶接によってパッケ
ージに接合する場合には、キャップの周縁をレーザーで
なぞりながらパッケージの封止面に溶接するものである
ため、溶接時キャップのみが加熱され、キャップが金属
製で、かつパッケージに比して熱容量が小さいこともあ
ってキャップ側がパッケージ側に比して高温に加熱され
て封止される。したがって冷却によるキャップの熱収縮
によってパッケージ上面に内方への大きな引張り応力が
作用し、特にパッケージがセラ果ツク製の場合には、セ
ラミックが引張り応力に弱いこともあって、パッケージ
にひび割れが生じ、配線が断線したり、封止の気密性が
損なわれるなどの問題点がある。However, when joining the cap to the package by laser welding, the peripheral edge of the cap is traced with a laser while being welded to the sealing surface of the package, so only the cap is heated during welding, and the cap is made of metal. In addition, since the heat capacity is smaller than that of the package, the cap side is heated to a higher temperature than the package side and sealed. Therefore, due to thermal contraction of the cap due to cooling, a large inward tensile stress is applied to the top surface of the package, which can cause cracks in the package, especially if the package is made of ceramic, as ceramic is weak against tensile stress. However, there are problems such as wiring breakage and loss of sealing.
本発明は上記問題点を解消すべくなされたもので、その
目的とするところは、キャップの封止時にパッケージと
の間に温度差が生じる接合方法により、冷却による熱収
縮が生じてもパッケージ側への応力を軽減することので
きる半導体装置用パッケージのキャップを提供するにあ
る。The present invention has been made to solve the above-mentioned problems.The purpose of the present invention is to use a bonding method that creates a temperature difference between the cap and the package when sealing the cap, so that even if heat shrinkage occurs due to cooling, the package side An object of the present invention is to provide a cap for a package for a semiconductor device that can reduce stress on the semiconductor device.
（課題を解決するための手段）
上記目的による本発明に係るキャップでは、金属薄板か
らなるキャップ本体のパッケージ接合面への接合部を除
く部位に、キャップ本体とは熱膨張係数の異なる素材か
らなる薄板を接合して形成されていることを特徴として
いる。(Means for Solving the Problems) In the cap according to the present invention for the above-mentioned purpose, the cap body made of a thin metal plate is made of a material having a different coefficient of thermal expansion from that of the cap body in a region other than the joint part to the package joint surface. It is characterized by being formed by joining thin plates.
上記薄板は、抵抗溶接、レーザー溶接等によりキャップ
本体上に接合したものであってもよいし、溶射法により
キャップ本体上に形成、接合した溶射皮膜であってもよ
い。The thin plate may be bonded onto the cap body by resistance welding, laser welding, or the like, or may be a thermally sprayed coating formed and bonded onto the cap body by thermal spraying.
（作用）
本発明に係る半導体装置用パッケージのキャップによれ
ば、金属薄板（キャップ本体）と、該金属薄板とは熱膨
張係数の異なる素材からなる薄板とを接合して形成した
から、パッケージとの封止の際、温度上昇して湾曲し、
そのためパッケージに対する見かけ上の膨張率が減じ、
また冷却して収縮する際にも湾曲部が元に戻るだけなの
で、パッケージへの応力を可及的に軽減できる。(Function) According to the cap for a package for a semiconductor device according to the present invention, since it is formed by joining a thin metal plate (cap body) and a thin plate made of a material having a different coefficient of thermal expansion from the thin metal plate, it is possible to combine the cap with the package. When sealing, the temperature rises and it curves,
Therefore, the apparent expansion rate for the package is reduced,
Furthermore, even when the package is cooled and shrinks, the curved portion simply returns to its original state, so stress on the package can be reduced as much as possible.
（実施例）
以下では本発明の好適な実施例を添付図面に基づいて詳
細に説明する。(Embodiments) Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings.
第１図に示すように、キャップ１０は、熱膨張係数の異
なる金属薄板Ａと薄板Ｂを接合して成る。As shown in FIG. 1, the cap 10 is made by joining thin metal plates A and B with different coefficients of thermal expansion.
金属薄板Ａ（キャップ本体）は、その周縁部でパッケー
ジ１２の接合面にレーザー溶接により接３
合される。The thin metal plate A (cap body) is joined to the joint surface of the package 12 at its peripheral edge by laser welding.
薄板Ｂトま金属薄板へのパッケージ接合面への接合部を
除く部位の上表面または下表面にその周縁部の数個所ま
たは全周に亘って抵抗溶接あるいはレーザー溶接によっ
て接合される。あるいはこれらの溶接の代りに、耐熱性
を有する接着剤で金属薄板Ａと薄板Ｂを接合してもよい
。Thin plate B is joined to the upper or lower surface of the thin metal plate at several points or over the entire circumference of the thin metal plate, excluding the area where it is joined to the package joining surface, by resistance welding or laser welding. Alternatively, instead of welding, the thin metal plates A and B may be joined using a heat-resistant adhesive.
金属薄板Ａには鉄−ニッケルーコバルト合金（熱膨張係
数４．５〜５ Ｘｌ０−６／”Ｃ）等が、薄板Ｂには銅
−タングステン合金（同６〜７Ｘ１０−６／°Ｃ）、銅
（同１８Ｘ１０−６／”Ｃ）あるいは鉄（同１４×１０
−ｈ／’Ｃ）等を用いることができる。Thin metal plate A is made of iron-nickel-cobalt alloy (coefficient of thermal expansion 4.5 to 5 Xl0-6/"C), etc.; thin plate B is made of copper-tungsten alloy (coefficient of thermal expansion 6 to 7X10-6/"C), etc. Copper (18×10-6/”C) or iron (14×10
-h/'C) etc. can be used.
例えば厚さ０．１ｍｍの鉄−ニッケルーコバルト合金の
金属薄板Ａと厚さ０．１ｍｍの鉄の薄板Ｂというように
２枚の熱膨張係数の異なる薄板を接合したキャップＩＯ
を用いることによって、パッケージ１２の接合面にキャ
ップＩＯを通常のごとくレーザー溶接すると、レーザー
によって、金属薄板Ａ、薄板Ｂが順次加熱され、従来と
同じようにパッケージ１２との間に温度差が生じる。For example, a cap IO is made by joining two thin plates with different coefficients of thermal expansion, such as a thin metal plate A of iron-nickel-cobalt alloy with a thickness of 0.1 mm and a thin metal plate B of iron with a thickness of 0.1 mm.
When the cap IO is laser welded to the joint surface of the package 12 as usual, the laser heats the metal thin plates A and B in sequence, creating a temperature difference between them and the package 12 as in the conventional case. .
４−
しかしながら、本実施例では、キャップ１ｏを熱膨張係
数の異なる金属薄板Ａと薄板Ｂを接合して形成したので
、レーザーによって加熱され、温度が上昇すると第２図
（ｂ）のように湾曲し、この湾曲した状態のままレーザ
ー溶接される。そして冷却すると第２図（Ｃ）のように
収縮して元の状態に戻る。4- However, in this example, since the cap 1o is formed by joining thin metal plates A and B with different coefficients of thermal expansion, when heated by the laser and the temperature rises, it curves as shown in Figure 2 (b). Then, it is laser welded in this curved state. When it is cooled, it contracts and returns to its original state as shown in Figure 2 (C).
上記のように、本実施例では、溶接時の温度上昇によっ
て金属薄板Ａ、Ｆｆ板Ｂは伸長するのであるが、湾曲す
るため、パッケージＩ２の接合面に対する外方への伸び
は、従来のように単板のキャップがそのまま平板状態で
伸長するのに比して実質的に少なくなる。もちろんキャ
ップは湾曲と同時に外方へも伸長するのであるが、外方
への伸長は湾曲することによってかなり軽減され、一方
パッケージ側もレーザーによる加熱によってやはり膨張
するので、両者のマツチングは従来よりも容易になる。As mentioned above, in this embodiment, the thin metal plates A and Ff plate B expand due to the temperature rise during welding, but since they are curved, the outward expansion with respect to the bonding surface of the package I2 is not the same as in the conventional case. This is substantially less than if a single plate cap were to expand as it is in a flat plate state. Of course, the cap expands outward at the same time as it curves, but the outward expansion is considerably reduced by curving, and the package side also expands due to heating by the laser, so the matching of the two is better than before. becomes easier.
したがって、冷却して収縮した際にも、従来に比してパ
ッケージ１２への応力を格段に軽減することができるの
である。Therefore, even when the package 12 is cooled and shrunk, the stress on the package 12 can be significantly reduced compared to the conventional case.
パッケージ１２の接合面には、キャップ１０の金属薄板
Ａと同種の金属、例えば鉄−ニッケルコバルト合金から
なる金属板Ｃをメタライズ層１４を介してろう付けなど
により接合しておき、レーザー溶接を行うようにする。A metal plate C made of the same type of metal as the metal thin plate A of the cap 10, for example, an iron-nickel cobalt alloy, is bonded to the bonding surface of the package 12 via a metallized layer 14 by brazing or the like, and then laser welding is performed. do it like this.
なお上記薄板Ｂは溶射法により金属薄板Ａのパッケージ
接合面への接合部を除く部位に形成、接合した溶射皮膜
であってもよい。溶射法は例えば高速ガス炎溶射法やプ
ラズマ溶射法を採用できる。Note that the thin plate B may be a thermal spray coating formed and bonded to the thin metal plate A at a portion other than the bonded portion to the package bonding surface by a thermal spraying method. For example, high-velocity gas flame spraying or plasma spraying can be employed as the thermal spraying method.
溶射材料にはタングステン、モリブデン等の金属を用い
ることができる。Metals such as tungsten and molybdenum can be used as the thermal spray material.
さらに薄板Ｂは、金属粉を溶剤、バインダーで混練した
金属粉ペーストを金属薄板Ａ上に塗布し焼結したメタラ
イズ層であってもよい。Further, the thin plate B may be a metallized layer obtained by applying a metal powder paste prepared by kneading metal powder with a solvent and a binder onto the metal thin plate A and sintering the paste.
また薄板Ｂは必ずしも金属でなくともよい。上記溶射法
によるときは、アルくす等の酸化物セラミックスや非酸
化物セラミックスを溶射材料にして金属薄板Ａ上にセラ
柔ツクスの薄板を形成することができる。Further, the thin plate B does not necessarily have to be made of metal. When using the above-mentioned thermal spraying method, a ceramic thin plate can be formed on the metal thin plate A using oxide ceramics such as alkoxide or non-oxide ceramics as the thermal spraying material.
薄板Ｂを形成する側は金属薄板Ａのどちら側でもよいが
、キャップ加熱時にパッケージ側に突出するよう反りが
発生するとパッケージ内部のデバイス等に接触して不具
合を生じる可能性があるため、上記と逆側に反りが生じ
るように、薄板Ｂが金属薄板Ａよりも熱膨張係数の大き
な素材のものであるときは金属薄板Ａの上面（パッケー
ジの外側となる面）側に、金属薄板Ａよりも熱膨張係数
が小さいものであるときは金属薄板六の下面側に薄板Ｂ
を接合するのが望ましい。The thin metal plate B can be formed on either side of the thin metal plate A, but if the cap is warped so as to protrude toward the package side when the cap is heated, it may come into contact with devices inside the package and cause problems. If thin plate B is made of a material with a larger coefficient of thermal expansion than thin metal plate A, the upper surface of thin metal plate A (the surface that will be the outside of the package) will be warped on the opposite side. If the coefficient of thermal expansion is small, thin plate B is placed on the bottom side of thin metal plate 6.
It is desirable to join.
なお、上記では金属薄板Ａに一枚の薄板Ｂを接合してキ
ャップを形成したが、これに限られることはなく、熱膨
張係数の順次異なる２枚以上の薄板を金属薄板Ａに接合
したキャップとしてもよい。Note that in the above, the cap is formed by bonding one thin plate B to the thin metal plate A, but the cap is not limited to this, and a cap may be formed by bonding two or more thin plates with sequentially different coefficients of thermal expansion to the thin metal plate A. You can also use it as
以上、本発明につき好適な実施例を挙げて種々説明した
が、本発明はこの実施例に限定されるものではなく、発
明の精神を逸脱しない範囲内で多くの改変を施し得るの
はもちろんのことである。The present invention has been variously explained above with reference to preferred embodiments, but the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.
（発明の効果）
以上のように本発明に係る半導体装置用パッケージのキ
ャップによれば、熱膨張係数の異なる金７−
属薄板と薄板とを接合して形成したから、パッケージと
の接合の際、温度上昇して湾曲し、そのためパッケージ
に対する見かけ上の膨張率が減じ、冷却して収縮する際
にも湾曲部が元に戻るだけなので、パッケージへの応力
を可及的に軽減でき、パッケージにひび割れが生じたり
封止の気密性が損なわれることがないなどの著効を奏す
る。(Effects of the Invention) As described above, according to the cap for a semiconductor device package according to the present invention, since the cap is formed by joining a metal thin plate and a thin metal plate having different coefficients of thermal expansion, it is possible to , the package curves as the temperature rises, which reduces the apparent expansion coefficient for the package, and when it cools and contracts, the curved part simply returns to its original shape, reducing stress on the package as much as possible, and making the package more stable. It has remarkable effects such as not causing cracks or impairing the airtightness of the seal.
第Ｖ図はキャップおよびパッケージの部分断面図を示す
。第２図はキャップをパッケージへレーザー溶接する捺
の説明図である。
１０・・・キャップ、 １２・・・パッケージ、Ａ・
・・金属薄板、 Ｂ・・・薄板。
第
１図
第
２図
（ａ）FIG. V shows a partial cross-sectional view of the cap and package. FIG. 2 is an explanatory diagram of the process for laser welding the cap to the package. 10...Cap, 12...Package, A.
...Thin metal plate, B...Thin plate. Figure 1 Figure 2 (a)
Claims (1)
への接合部を除く部位に、キャップ本体とは熱膨張係数
の異なる素材からなる薄板を接合して成る半導体装置用
パッケージのキャップ。 ２、前記薄板は溶射法によってキャップ本体上に形成、
接合した溶射皮膜であることを特徴とする請求項１記載
の半導体装置用パッケージのキャップ。[Scope of Claims] 1. A package for a semiconductor device in which a thin plate made of a material having a coefficient of thermal expansion different from that of the cap body is bonded to a portion of the cap body made of a thin metal plate other than the bonded portion to the package bonding surface. cap. 2. The thin plate is formed on the cap body by thermal spraying,
2. The cap for a package for a semiconductor device according to claim 1, wherein the cap is a bonded thermal spray coating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3670990 | 1990-02-16 | ||
| JP2-36709 | 1990-02-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03263356A true JPH03263356A (en) | 1991-11-22 |
Family
ID=12477296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2249374A Pending JPH03263356A (en) | 1990-02-16 | 1990-09-19 | Cap of package for semiconductor device use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03263356A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151619A (en) * | 1992-11-12 | 1994-05-31 | Tokai Rika Co Ltd | Structure of packages for electronic parts |
-
1990
- 1990-09-19 JP JP2249374A patent/JPH03263356A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151619A (en) * | 1992-11-12 | 1994-05-31 | Tokai Rika Co Ltd | Structure of packages for electronic parts |
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