JPH03263356A - Cap of package for semiconductor device use - Google Patents

Cap of package for semiconductor device use

Info

Publication number
JPH03263356A
JPH03263356A JP2249374A JP24937490A JPH03263356A JP H03263356 A JPH03263356 A JP H03263356A JP 2249374 A JP2249374 A JP 2249374A JP 24937490 A JP24937490 A JP 24937490A JP H03263356 A JPH03263356 A JP H03263356A
Authority
JP
Japan
Prior art keywords
package
cap
thin sheet
thin
thermal expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2249374A
Other languages
Japanese (ja)
Inventor
Takaharu Miyamoto
隆春 宮本
Fumio Miyagawa
文雄 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Publication of JPH03263356A publication Critical patent/JPH03263356A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce a stress to the side of a package even when a thermal contraction is caused by a cooling operation by a method wherein a thin sheet composed of a blank whose coefficient of thermal expansion is different from that of a cap main body is bonded to, and formed at, parts excluding a bonding part to a package bonding face of the cap main body composed of a metal thin sheet. CONSTITUTION:A cap 10 is formed by bonding a metal thin sheet A and a thin sheet B whose coefficients of thermal expansion are different from each other. The metal thin sheet A (cap main body) is bonded to a bonding face of a package 12 at its peripheral edge part by a laser welding operation. The metal thin sheet A and the thin sheet B are extended by a temperature rise at the welding operation. However, since they are curved, the extension to the outside with reference to the bonding face of the package 12 becomes substantially small as compared with a case where a cap of a single sheet is extended as it is in a flat-sheet state. The extension to the outside is reduced considerably because they are curved. On the other hand, since also the side of the package is expanded by heating by means of a laser, both are matched easily. Consequently, even when they are cooled and contracted, a stress to the package 12 can remarkably be reduced.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は半導体装置用パッケージのキャップに関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a cap for a package for a semiconductor device.

(従来の技術) 半導体装置には、半導体素子収納用パッケージに半導体
素子を搭載して金属製キャップにより封止するものがあ
る。その際のキャップ封止には、キャップをパッケージ
の封止面にろう付け、はんだ付け、レーザー溶接等によ
って接合するようにしている。
(Prior Art) Some semiconductor devices include a semiconductor device mounted in a semiconductor device storage package and sealed with a metal cap. To seal the cap at that time, the cap is joined to the sealing surface of the package by brazing, soldering, laser welding, or the like.

(発明が解決しようとする課題) 金属製キャップを上記のようにろう付け、はんだ付けに
よりパッケージに接合する場合には、パッケージ、ろう
材あるいははんだ、およびキャップを所定治具に組み込
んで炉中で全体を加熱して行う。したがって、その際の
加熱による熱膨張、および冷却による熱収縮はパッケー
ジ、キャップ共に同時に起きるので、両者の熱膨張係数
がほぼ同じであれば、冷却後熱収縮の差異により応力が
残留するという不具合はそれ程生じない。
(Problem to be Solved by the Invention) When joining a metal cap to a package by brazing or soldering as described above, the package, brazing material or solder, and cap are assembled in a prescribed jig and placed in a furnace. Heat the whole thing. Therefore, thermal expansion due to heating and thermal contraction due to cooling occur simultaneously for both the package and the cap, so if the coefficients of thermal expansion of both are approximately the same, the problem of residual stress due to the difference in thermal contraction after cooling will not occur. It doesn't happen that much.

しかしながら、キャップをレーザー溶接によってパッケ
ージに接合する場合には、キャップの周縁をレーザーで
なぞりながらパッケージの封止面に溶接するものである
ため、溶接時キャップのみが加熱され、キャップが金属
製で、かつパッケージに比して熱容量が小さいこともあ
ってキャップ側がパッケージ側に比して高温に加熱され
て封止される。したがって冷却によるキャップの熱収縮
によってパッケージ上面に内方への大きな引張り応力が
作用し、特にパッケージがセラ果ツク製の場合には、セ
ラミックが引張り応力に弱いこともあって、パッケージ
にひび割れが生じ、配線が断線したり、封止の気密性が
損なわれるなどの問題点がある。
However, when joining the cap to the package by laser welding, the peripheral edge of the cap is traced with a laser while being welded to the sealing surface of the package, so only the cap is heated during welding, and the cap is made of metal. In addition, since the heat capacity is smaller than that of the package, the cap side is heated to a higher temperature than the package side and sealed. Therefore, due to thermal contraction of the cap due to cooling, a large inward tensile stress is applied to the top surface of the package, which can cause cracks in the package, especially if the package is made of ceramic, as ceramic is weak against tensile stress. However, there are problems such as wiring breakage and loss of sealing.

本発明は上記問題点を解消すべくなされたもので、その
目的とするところは、キャップの封止時にパッケージと
の間に温度差が生じる接合方法により、冷却による熱収
縮が生じてもパッケージ側への応力を軽減することので
きる半導体装置用パッケージのキャップを提供するにあ
る。
The present invention has been made to solve the above-mentioned problems.The purpose of the present invention is to use a bonding method that creates a temperature difference between the cap and the package when sealing the cap, so that even if heat shrinkage occurs due to cooling, the package side An object of the present invention is to provide a cap for a package for a semiconductor device that can reduce stress on the semiconductor device.

(課題を解決するための手段) 上記目的による本発明に係るキャップでは、金属薄板か
らなるキャップ本体のパッケージ接合面への接合部を除
く部位に、キャップ本体とは熱膨張係数の異なる素材か
らなる薄板を接合して形成されていることを特徴として
いる。
(Means for Solving the Problems) In the cap according to the present invention for the above-mentioned purpose, the cap body made of a thin metal plate is made of a material having a different coefficient of thermal expansion from that of the cap body in a region other than the joint part to the package joint surface. It is characterized by being formed by joining thin plates.

上記薄板は、抵抗溶接、レーザー溶接等によりキャップ
本体上に接合したものであってもよいし、溶射法により
キャップ本体上に形成、接合した溶射皮膜であってもよ
い。
The thin plate may be bonded onto the cap body by resistance welding, laser welding, or the like, or may be a thermally sprayed coating formed and bonded onto the cap body by thermal spraying.

(作用) 本発明に係る半導体装置用パッケージのキャップによれ
ば、金属薄板(キャップ本体)と、該金属薄板とは熱膨
張係数の異なる素材からなる薄板とを接合して形成した
から、パッケージとの封止の際、温度上昇して湾曲し、
そのためパッケージに対する見かけ上の膨張率が減じ、
また冷却して収縮する際にも湾曲部が元に戻るだけなの
で、パッケージへの応力を可及的に軽減できる。
(Function) According to the cap for a package for a semiconductor device according to the present invention, since it is formed by joining a thin metal plate (cap body) and a thin plate made of a material having a different coefficient of thermal expansion from the thin metal plate, it is possible to combine the cap with the package. When sealing, the temperature rises and it curves,
Therefore, the apparent expansion rate for the package is reduced,
Furthermore, even when the package is cooled and shrinks, the curved portion simply returns to its original state, so stress on the package can be reduced as much as possible.

(実施例) 以下では本発明の好適な実施例を添付図面に基づいて詳
細に説明する。
(Embodiments) Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings.

第1図に示すように、キャップ10は、熱膨張係数の異
なる金属薄板Aと薄板Bを接合して成る。
As shown in FIG. 1, the cap 10 is made by joining thin metal plates A and B with different coefficients of thermal expansion.

金属薄板A(キャップ本体)は、その周縁部でパッケー
ジ12の接合面にレーザー溶接により接3 合される。
The thin metal plate A (cap body) is joined to the joint surface of the package 12 at its peripheral edge by laser welding.

薄板Bトま金属薄板へのパッケージ接合面への接合部を
除く部位の上表面または下表面にその周縁部の数個所ま
たは全周に亘って抵抗溶接あるいはレーザー溶接によっ
て接合される。あるいはこれらの溶接の代りに、耐熱性
を有する接着剤で金属薄板Aと薄板Bを接合してもよい
Thin plate B is joined to the upper or lower surface of the thin metal plate at several points or over the entire circumference of the thin metal plate, excluding the area where it is joined to the package joining surface, by resistance welding or laser welding. Alternatively, instead of welding, the thin metal plates A and B may be joined using a heat-resistant adhesive.

金属薄板Aには鉄−ニッケルーコバルト合金(熱膨張係
数4.5〜5 Xl0−6/”C)等が、薄板Bには銅
−タングステン合金(同6〜7X10−6/°C)、銅
(同18X10−6/”C)あるいは鉄(同14×10
−h/’C)等を用いることができる。
Thin metal plate A is made of iron-nickel-cobalt alloy (coefficient of thermal expansion 4.5 to 5 Xl0-6/"C), etc.; thin plate B is made of copper-tungsten alloy (coefficient of thermal expansion 6 to 7X10-6/"C), etc. Copper (18×10-6/”C) or iron (14×10
-h/'C) etc. can be used.

例えば厚さ0.1mmの鉄−ニッケルーコバルト合金の
金属薄板Aと厚さ0.1mmの鉄の薄板Bというように
2枚の熱膨張係数の異なる薄板を接合したキャップIO
を用いることによって、パッケージ12の接合面にキャ
ップIOを通常のごとくレーザー溶接すると、レーザー
によって、金属薄板A、薄板Bが順次加熱され、従来と
同じようにパッケージ12との間に温度差が生じる。
For example, a cap IO is made by joining two thin plates with different coefficients of thermal expansion, such as a thin metal plate A of iron-nickel-cobalt alloy with a thickness of 0.1 mm and a thin metal plate B of iron with a thickness of 0.1 mm.
When the cap IO is laser welded to the joint surface of the package 12 as usual, the laser heats the metal thin plates A and B in sequence, creating a temperature difference between them and the package 12 as in the conventional case. .

4− しかしながら、本実施例では、キャップ1oを熱膨張係
数の異なる金属薄板Aと薄板Bを接合して形成したので
、レーザーによって加熱され、温度が上昇すると第2図
(b)のように湾曲し、この湾曲した状態のままレーザ
ー溶接される。そして冷却すると第2図(C)のように
収縮して元の状態に戻る。
4- However, in this example, since the cap 1o is formed by joining thin metal plates A and B with different coefficients of thermal expansion, when heated by the laser and the temperature rises, it curves as shown in Figure 2 (b). Then, it is laser welded in this curved state. When it is cooled, it contracts and returns to its original state as shown in Figure 2 (C).

上記のように、本実施例では、溶接時の温度上昇によっ
て金属薄板A、Ff板Bは伸長するのであるが、湾曲す
るため、パッケージI2の接合面に対する外方への伸び
は、従来のように単板のキャップがそのまま平板状態で
伸長するのに比して実質的に少なくなる。もちろんキャ
ップは湾曲と同時に外方へも伸長するのであるが、外方
への伸長は湾曲することによってかなり軽減され、一方
パッケージ側もレーザーによる加熱によってやはり膨張
するので、両者のマツチングは従来よりも容易になる。
As mentioned above, in this embodiment, the thin metal plates A and Ff plate B expand due to the temperature rise during welding, but since they are curved, the outward expansion with respect to the bonding surface of the package I2 is not the same as in the conventional case. This is substantially less than if a single plate cap were to expand as it is in a flat plate state. Of course, the cap expands outward at the same time as it curves, but the outward expansion is considerably reduced by curving, and the package side also expands due to heating by the laser, so the matching of the two is better than before. becomes easier.

したがって、冷却して収縮した際にも、従来に比してパ
ッケージ12への応力を格段に軽減することができるの
である。
Therefore, even when the package 12 is cooled and shrunk, the stress on the package 12 can be significantly reduced compared to the conventional case.

パッケージ12の接合面には、キャップ10の金属薄板
Aと同種の金属、例えば鉄−ニッケルコバルト合金から
なる金属板Cをメタライズ層14を介してろう付けなど
により接合しておき、レーザー溶接を行うようにする。
A metal plate C made of the same type of metal as the metal thin plate A of the cap 10, for example, an iron-nickel cobalt alloy, is bonded to the bonding surface of the package 12 via a metallized layer 14 by brazing or the like, and then laser welding is performed. do it like this.

なお上記薄板Bは溶射法により金属薄板Aのパッケージ
接合面への接合部を除く部位に形成、接合した溶射皮膜
であってもよい。溶射法は例えば高速ガス炎溶射法やプ
ラズマ溶射法を採用できる。
Note that the thin plate B may be a thermal spray coating formed and bonded to the thin metal plate A at a portion other than the bonded portion to the package bonding surface by a thermal spraying method. For example, high-velocity gas flame spraying or plasma spraying can be employed as the thermal spraying method.

溶射材料にはタングステン、モリブデン等の金属を用い
ることができる。
Metals such as tungsten and molybdenum can be used as the thermal spray material.

さらに薄板Bは、金属粉を溶剤、バインダーで混練した
金属粉ペーストを金属薄板A上に塗布し焼結したメタラ
イズ層であってもよい。
Further, the thin plate B may be a metallized layer obtained by applying a metal powder paste prepared by kneading metal powder with a solvent and a binder onto the metal thin plate A and sintering the paste.

また薄板Bは必ずしも金属でなくともよい。上記溶射法
によるときは、アルくす等の酸化物セラミックスや非酸
化物セラミックスを溶射材料にして金属薄板A上にセラ
柔ツクスの薄板を形成することができる。
Further, the thin plate B does not necessarily have to be made of metal. When using the above-mentioned thermal spraying method, a ceramic thin plate can be formed on the metal thin plate A using oxide ceramics such as alkoxide or non-oxide ceramics as the thermal spraying material.

薄板Bを形成する側は金属薄板Aのどちら側でもよいが
、キャップ加熱時にパッケージ側に突出するよう反りが
発生するとパッケージ内部のデバイス等に接触して不具
合を生じる可能性があるため、上記と逆側に反りが生じ
るように、薄板Bが金属薄板Aよりも熱膨張係数の大き
な素材のものであるときは金属薄板Aの上面(パッケー
ジの外側となる面)側に、金属薄板Aよりも熱膨張係数
が小さいものであるときは金属薄板六の下面側に薄板B
を接合するのが望ましい。
The thin metal plate B can be formed on either side of the thin metal plate A, but if the cap is warped so as to protrude toward the package side when the cap is heated, it may come into contact with devices inside the package and cause problems. If thin plate B is made of a material with a larger coefficient of thermal expansion than thin metal plate A, the upper surface of thin metal plate A (the surface that will be the outside of the package) will be warped on the opposite side. If the coefficient of thermal expansion is small, thin plate B is placed on the bottom side of thin metal plate 6.
It is desirable to join.

なお、上記では金属薄板Aに一枚の薄板Bを接合してキ
ャップを形成したが、これに限られることはなく、熱膨
張係数の順次異なる2枚以上の薄板を金属薄板Aに接合
したキャップとしてもよい。
Note that in the above, the cap is formed by bonding one thin plate B to the thin metal plate A, but the cap is not limited to this, and a cap may be formed by bonding two or more thin plates with sequentially different coefficients of thermal expansion to the thin metal plate A. You can also use it as

以上、本発明につき好適な実施例を挙げて種々説明した
が、本発明はこの実施例に限定されるものではなく、発
明の精神を逸脱しない範囲内で多くの改変を施し得るの
はもちろんのことである。
The present invention has been variously explained above with reference to preferred embodiments, but the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.

(発明の効果) 以上のように本発明に係る半導体装置用パッケージのキ
ャップによれば、熱膨張係数の異なる金7− 属薄板と薄板とを接合して形成したから、パッケージと
の接合の際、温度上昇して湾曲し、そのためパッケージ
に対する見かけ上の膨張率が減じ、冷却して収縮する際
にも湾曲部が元に戻るだけなので、パッケージへの応力
を可及的に軽減でき、パッケージにひび割れが生じたり
封止の気密性が損なわれることがないなどの著効を奏す
る。
(Effects of the Invention) As described above, according to the cap for a semiconductor device package according to the present invention, since the cap is formed by joining a metal thin plate and a thin metal plate having different coefficients of thermal expansion, it is possible to , the package curves as the temperature rises, which reduces the apparent expansion coefficient for the package, and when it cools and contracts, the curved part simply returns to its original shape, reducing stress on the package as much as possible, and making the package more stable. It has remarkable effects such as not causing cracks or impairing the airtightness of the seal.

【図面の簡単な説明】[Brief explanation of drawings]

第V図はキャップおよびパッケージの部分断面図を示す
。第2図はキャップをパッケージへレーザー溶接する捺
の説明図である。 10・・・キャップ、  12・・・パッケージ、A・
・・金属薄板、 B・・・薄板。 第 1図 第 2図 (a)
FIG. V shows a partial cross-sectional view of the cap and package. FIG. 2 is an explanatory diagram of the process for laser welding the cap to the package. 10...Cap, 12...Package, A.
...Thin metal plate, B...Thin plate. Figure 1 Figure 2 (a)

Claims (1)

【特許請求の範囲】 1、金属薄板からなるキャップ本体のパッケージ接合面
への接合部を除く部位に、キャップ本体とは熱膨張係数
の異なる素材からなる薄板を接合して成る半導体装置用
パッケージのキャップ。 2、前記薄板は溶射法によってキャップ本体上に形成、
接合した溶射皮膜であることを特徴とする請求項1記載
の半導体装置用パッケージのキャップ。
[Scope of Claims] 1. A package for a semiconductor device in which a thin plate made of a material having a coefficient of thermal expansion different from that of the cap body is bonded to a portion of the cap body made of a thin metal plate other than the bonded portion to the package bonding surface. cap. 2. The thin plate is formed on the cap body by thermal spraying,
2. The cap for a package for a semiconductor device according to claim 1, wherein the cap is a bonded thermal spray coating.
JP2249374A 1990-02-16 1990-09-19 Cap of package for semiconductor device use Pending JPH03263356A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3670990 1990-02-16
JP2-36709 1990-02-16

Publications (1)

Publication Number Publication Date
JPH03263356A true JPH03263356A (en) 1991-11-22

Family

ID=12477296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2249374A Pending JPH03263356A (en) 1990-02-16 1990-09-19 Cap of package for semiconductor device use

Country Status (1)

Country Link
JP (1) JPH03263356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151619A (en) * 1992-11-12 1994-05-31 Tokai Rika Co Ltd Structure of packages for electronic parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151619A (en) * 1992-11-12 1994-05-31 Tokai Rika Co Ltd Structure of packages for electronic parts

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