JPH03261145A - Method of flattening surface of semiconductor device - Google Patents
Method of flattening surface of semiconductor deviceInfo
- Publication number
- JPH03261145A JPH03261145A JP6053490A JP6053490A JPH03261145A JP H03261145 A JPH03261145 A JP H03261145A JP 6053490 A JP6053490 A JP 6053490A JP 6053490 A JP6053490 A JP 6053490A JP H03261145 A JPH03261145 A JP H03261145A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sog film
- sog
- solvent
- dried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract 2
- 239000000376 reactant Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 239000000047 product Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、高集積半導体装置の多層配線の製造方法に関
する関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for manufacturing multilayer wiring for highly integrated semiconductor devices.
多層配線の層間絶縁層の表面の平坦化を目的とし
絶縁膜で被覆された基板上に、第１のＳＯＧ膜を塗布す
る工程と、該第１のＳＯＧ膜の溶剤を揮発させて、該第
１のＳＯＧ膜を乾燥した第１の５ｏｃｋに変換する工程
と、該乾燥した第１のＳＯＧ膜上に第２のＳＯＧ膜或い
は溶剤を塗布する工程と、該乾燥した第１のＳＯＧ膜に
第２のＳＯＧ膜或いは溶剤を浸透させて、第１のＳＯＧ
膜と第２のＳＯＧ膜との反応物を生成する工程と、該反
応物を除去し、残った該乾燥した第１のｓｏｃｇを熱処
理して、 ５ｉｎ２膜に変換する工程とを含むように構
成する。A step of applying a first SOG film on a substrate covered with an insulating film for the purpose of planarizing the surface of an interlayer insulating layer of a multilayer wiring, and a step of evaporating the solvent of the first SOG film to form a first SOG film. a step of converting a first SOG film into a dry first 5ock; a step of applying a second SOG film or a solvent on the dry first SOG film; The second SOG film or solvent is penetrated into the first SOG film.
The method is configured to include a step of generating a reactant between the membrane and the second SOG membrane, and a step of removing the reactant and heat-treating the remaining dried first SOG film to convert it into a 5in2 membrane. do.
本発明は、高集積半導体装置の多層配線の製造方法に関
する関する。The present invention relates to a method for manufacturing multilayer wiring for highly integrated semiconductor devices.
近年、半導体装置の高集積化に伴い、多層配線の構造も
益々複雑化、高層化している。In recent years, as semiconductor devices have become highly integrated, the structure of multilayer wiring has become increasingly complex and high-rise.
このため、配線層、絶縁層の平坦化がより重要な技術と
して必要になってきた。For this reason, planarization of wiring layers and insulating layers has become a more important technique.
第３図は従来例の説明図である。 FIG. 3 is an explanatory diagram of a conventional example.
図において、１１はＳｉｎｇＭ！、 １２はｓｏ＋４で
ある。In the figure, 11 is SingM! , 12 is so+4.
従来、眉間絶縁膜の表面の平坦化の一方法として、 Ｓ
ＯＧ膜を用いる方法がある。Conventionally, as a method for flattening the surface of the glabella insulating film, S
There is a method using an OG film.
これは、シリコン（Ｓｔ）の有機化合物を溶剤に溶解し
たものを、スピナー等により半導体等の基板上に形成し
た二酸化シリコン（Ｓｉｎｇ）膜等の絶縁物上に塗布し
、熱乾燥して２表面にＳｉ０ｇ膜を形成するもので、塗
布した時には粘性の比較的低い溶液のため２表面が滑ら
かに、凹凸のない比較的平坦な面が得られる効果がある
。This is done by applying a solution of an organic compound of silicon (St) in a solvent onto an insulating material such as a silicon dioxide (Sing) film formed on a substrate such as a semiconductor using a spinner, etc., and drying it with heat to form two surfaces. It forms a SiOg film on the surface of the surface of the surface, and when applied, since the solution has a relatively low viscosity, the two surfaces are smooth and have the effect of obtaining a relatively flat surface with no irregularities.
このＳＯＧ膜を塗布する方式は、大小の凹みを埋め込む
方法としては、優れた方法ではあるが、凹部の膜の厚さ
が所望の厚さ以上に厚くなって、その部分にスルーホー
ル等を開口する場合に大きな障害となる場合がある。Although this method of applying an SOG film is an excellent method for filling small and large dents, the thickness of the film in the recesses becomes thicker than the desired thickness, and through holes etc. are opened in those areas. This can be a major hindrance when doing so.
本発明は、この埋め込み部分の平坦化がＲ調に所望の厚
さに行われることを目的として提供されるものである。The present invention is provided for the purpose of flattening this buried portion to a desired thickness in an R-tone.
（課題を解決するための手段〕 第１図は本発明の原理説明図である。(Means for solving problems) FIG. 1 is a diagram explaining the principle of the present invention.
図において、１は基板、２は絶縁膜、３は第１のＳＯＧ
膜、３゛は乾燥した第１のＳａＣ膜、４は第２のＳＯＧ
膜、４゛は第１のＳＯＧ膜と第２のＳＯＧ膜。In the figure, 1 is a substrate, 2 is an insulating film, and 3 is a first SOG.
3 is the dry first SaC film, 4 is the second SOG film
The film 4' is the first SOG film and the second SOG film.
或いは溶剤の反応物、５は５ｉ（ｈ膜である。Alternatively, the solvent reactant 5 is a 5i(h film).
本発明の目的は、第１図（ａ）に示すように。The object of the present invention is as shown in FIG. 1(a).
埋め込みしたい凹みが１μｍ以下と小さい場合には、
５ＯＧＩＩ！！！は数μｍの凹みも問題になる。If the dent you want to fill is small, less than 1μm,
5OGII! ! ! Even a dent of several micrometers becomes a problem.
第１回目のＳＯＧ膜を塗布した後、軽いベーキングを行
い溶剤を揮発させた後、 ＳＯＧ膜またはその溶剤を
再び塗布する。After applying the first SOG film, a light baking is performed to volatilize the solvent, and then the SOG film or its solvent is applied again.
始めに塗布した１回目のＳＯＧ膜の表面は第２のＳＯＧ
膜に含まれる溶剤と反応して、溶剤により除去されて、
狭い凹みのところだけが、残ることになる。The surface of the first SOG film applied at the beginning is the second SOG film.
Reacts with the solvent contained in the membrane and is removed by the solvent,
Only the narrow depression will remain.
即ち１本発明の目的は、第１図（ａ）に示すように、絶
縁膜２で被覆された基板１上に、第１の５ＯＧＩＩ３を
塗布する工程と。That is, one object of the present invention is to apply a first 5OGII 3 onto a substrate 1 covered with an insulating film 2, as shown in FIG. 1(a).
第１図（ｂ）に示すように、該５ＯＧＩＩ１３の溶剤を
揮発させて、乾燥した第１の５ＯＧｌ１３ ’ とする
工程と。As shown in FIG. 1(b), a step of volatilizing the solvent of the 5OGII13 to obtain a dried first 5OGl13'.
第１図（Ｃ）に示すように、該乾燥した第１のＳＯＧ膜
３゛上に第２のＳＯＧ膜或いは溶剤４を塗布する工程と
。As shown in FIG. 1(C), a second SOG film or a solvent 4 is applied on the dried first SOG film 3.
第１図（ｄ）に示すように、該乾燥した第１のＳＯＧ膜
３゛に第２のＳＯＧ膜、或いは溶剤を浸透させて１反応
物４°にする工程と。As shown in FIG. 1(d), a second SOG film or a solvent is infiltrated into the dried first SOG film 3' to make one reactant 4°.
第１図（ｅ）に示すように、該反応物４．を除去し、残
った該乾燥した第１のＳＯＧ膜３′を熱処理して、 Ｓ
ｉ０ｇ膜５を形成する工程とを含むことにより遠戚され
る。As shown in FIG. 1(e), the reactant 4. is removed, and the remaining dried first SOG film 3' is heat-treated to form SOG.
The method is distantly related to the step of forming an i0g film 5.
本発明の手段により、狭い凹みのみが、２回目のＳＯＧ
膜塗布、または溶剤の塗布により残るので全体として平
坦化される。By means of the invention, only narrow depressions can be removed by the second SOG
Since it remains after film coating or solvent coating, it is flattened as a whole.
第２図は本発明の一実施例の工程順模式断面図である。 FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention in the order of steps.
図において、６はＳｉ基板、７は第１のＳｉＯ□膜８は
第１のＳＯＧ膜、８′は乾燥した第１のＳＯＧ膜９は第
２のＳＯＧ膜、９゛ は第１のＳＯＧ膜と第２のＳＯＧ
膜の反応物、１０は第２の５ｉｎ２膜である。In the figure, 6 is the Si substrate, 7 is the first SiO□ film 8 is the first SOG film, 8' is the dried first SOG film 9 is the second SOG film, and 9' is the first SOG film. and second SOG
Membrane reactant 10 is the second 5in2 membrane.
第２図（ａ）〜（ｅ）の図面にもとすいて９本発明の一
実施例を説明する。Nine embodiments of the present invention will be described with reference to the drawings in FIGS. 2(a) to 2(e).
第２図（ａ）に示すように、 ５ｉＯｚ膜上に第１のＳ
ＯＧ膜８をスピナーにより、１．５μｍの厚さにＳｉ基
板６上に被覆した傾斜面やピンホールを有する第１の５
ｉｎ２膜上に塗布する。この時、広い凹み部分には厚く
塗布される。As shown in Fig. 2(a), the first S
The OG film 8 was coated on the Si substrate 6 to a thickness of 1.5 μm using a spinner, and a first film 5 having an inclined surface and pinholes was coated on the Si substrate 6.
Coat on the in2 film. At this time, a thick layer is applied to the wide recessed areas.
次いで、第２図（ｂ）に示すように、 ＳＯＧ膜の溶剤
であるエニルセロゾルブ等の溶剤の揮発する温度１例え
ば１００″Ｃで２０分間の乾燥を行い、溶剤を除去して
、乾燥した第１のＳＯＧ膜８゛とする。Next, as shown in FIG. 2(b), drying is performed for 20 minutes at a temperature 1, for example, 100"C, at which a solvent such as enyl cellosolve, which is a solvent for the SOG film, evaporates, to remove the solvent, and the dried first film is dried. The SOG film is 8゛.
第１のＳｉ０ｇ膜７のピンホールの上にも厚く第１のＳ
ＯＧ膜８′が形成されている。A thick layer of first S is also applied over the pinhole of the first Si0g film 7.
An OG film 8' is formed.
第２図（Ｃ）に示すように、第２のＳＯＧ膜９をスピナ
ーを用いて、１．５μｍの厚さに塗布する。As shown in FIG. 2(C), a second SOG film 9 is applied to a thickness of 1.5 μm using a spinner.
続いて、第２図（ｄ）に示すように、乾燥した第１のＳ
ＯＧ膜８゛に第２のＳＯＧ膜９を常温で３０分馴染ませ
る。すると、第２のＳＯＧ膜９の溶剤が乾燥した第１の
ＳＯＧ膜８′に徐々に浸透して１表面から軟らかい反応
物を生成していく。Subsequently, as shown in FIG. 2(d), the dried first S
The second SOG film 9 is allowed to blend into the OG film 8 for 30 minutes at room temperature. Then, the solvent of the second SOG film 9 gradually permeates into the dried first SOG film 8', producing soft reactants from one surface.
この時、広い凹み部分には、第２の５ＯＧＷＩ９が厚く
塗布され、従って、乾燥した第１のＳＯＧ膜８゛との反
応量が多くなり、残る第１のＳＯＧ膜８゛が薄くなるの
が１本発明のポイントである。At this time, the second 5OGWI 9 is applied thickly to the wide concave portions, and therefore the amount of reaction with the dried first SOG film 8' increases, causing the remaining first SOG film 8' to become thinner. 1. This is the main point of the present invention.
第２図（ｅ）に示すように、溶剤に浸漬するか溶剤をス
ピナーにより塗布することにより９反応したＳＯＧ膜の
反応物９を完全に除去したあと、４００°Ｃで３０分間
のベーキングを行い、焼結して、残ったＳＯＧ膜８°を
第２のＳｉｎｇ膜１０に変質させて、滑らかな表面の絶
縁物層を形成する。As shown in Figure 2(e), after completely removing the reactant 9 of the SOG film by dipping it in a solvent or applying the solvent with a spinner, it was baked at 400°C for 30 minutes. After sintering, the remaining SOG film 8° is transformed into a second Sing film 10 to form an insulating layer with a smooth surface.
こうして出来た表面は、狭い凹みは５ｉｏｚＷＡで埋め
られ、広い凹みの部分は５ｉＯ１膜の膜厚が厚くならず
、所望の平坦化形状が得られる。On the surface thus formed, the narrow depressions are filled with 5iozWA, and the 5iO1 film does not become thick in the wide depressions, so that a desired flattened shape can be obtained.
以上説明したように１本発明によれば、 ＳＯＧ膜を２
度塗布するか、または、 ＳＯＧ膜を塗布後、更に溶剤
のみを塗布することにより、埋め込みたいピンホール等
の狭い凹みは埋め込んで平坦化し。As explained above, according to the present invention, the SOG film is
By applying the SOG film twice, or by applying only a solvent after applying the SOG film, narrow dents such as pinholes that you want to fill can be filled and flattened.
更にｌｅｉ！厚を厚くしたくない素子形成部の凹みは薄
く平坦化したような形状を得ることができる。More lei! It is possible to obtain a thin and flattened shape for the recesses in the element forming portions where it is not desired to increase the thickness.
第１図は本発明の原理説明図。
第２図は本発明の一実施例の工程順模式断面図第３図は
従来例の説明図
である。
図において。
１は基板、 ２は絶縁膜。
３は第１のＳＯＧ膜
３′は乾燥した第１のＳＯＧ膜。
４は第２のＳＯＧ膜。
４゛ は第１のＳＯＧ膜と第２のＳＯＧ膜或いは溶剤の
反応物。
５はＳｉＯ２膜 ６はＳｉ基板。
７は第１のＳｉ０ｇ膜、 ８は第１のＳＯＧ膜。
８゛ は乾燥した第１のＳＯＧ膜。
９は第２のＳＯＧ膜
９゛は第１のＳＯＧ膜と第２のＳＯＧ膜の反応物。
１０は第２のＳｉＯ□膜
Ａイを日月ｎ肩理言脣−８月Ｂ町
第 １ 図
ネ足釆仲１の説明図
第 ３ 団FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is a schematic cross-sectional view of a process order according to an embodiment of the present invention, and FIG. 3 is an explanatory diagram of a conventional example. In fig. 1 is a substrate, 2 is an insulating film. 3 is a first SOG film 3' which is a dried first SOG film. 4 is the second SOG film. 4゛ is a reaction product of the first SOG film and the second SOG film or the solvent. 5 is a SiO2 film and 6 is a Si substrate. 7 is the first Si0g film, and 8 is the first SOG film. 8゛ is the dried first SOG film. 9 is a second SOG film 9' is a reaction product of the first SOG film and the second SOG film. 10 is the second SiO□ film Ai.
Claims (1)
ピン・オン・グラス（ＳＯＧ）膜（３）を塗布する工程
と、該第１のＳＯＧ膜（３）の溶剤を揮発させて、該第
１のＳＯＧ膜を乾燥した第１のＳＯＧ膜（３′）に変換
する工程と、該乾燥した第１のＳＯＧ膜（３′）上に第
２のＳＯＧ膜或いは溶剤（４）を塗布する工程と、該乾
燥した第１のＳＯＧ膜（３′）に第２のＳＯＧ膜或いは
溶剤を浸透させて、第１のＳＯＧ膜と第２のＳＯＧ膜と
の反応物を生成する工程と、該反応物（４′）を除去し
、残った該乾燥した第１のＳＯＧ膜（３′）を熱処理し
て、二酸化シリコン膜（５）に変換する工程とを含むこ
とを特徴とする半導体装置の表面平坦化方法。A step of applying a first spin-on-glass (SOG) film (3) on a substrate (1) coated with an insulating film (2), and volatilizing the solvent of the first SOG film (3). and converting the first SOG film into a dry first SOG film (3'), and applying a second SOG film or a solvent (4) on the dry first SOG film (3'). ) and infiltrating the dried first SOG film (3') with a second SOG film or a solvent to generate a reaction product between the first SOG film and the second SOG film. and a step of removing the reactant (4') and heat-treating the remaining dried first SOG film (3') to convert it into a silicon dioxide film (5). A method for flattening the surface of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6053490A JPH03261145A (en) | 1990-03-12 | 1990-03-12 | Method of flattening surface of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6053490A JPH03261145A (en) | 1990-03-12 | 1990-03-12 | Method of flattening surface of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03261145A true JPH03261145A (en) | 1991-11-21 |
Family
ID=13145067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6053490A Pending JPH03261145A (en) | 1990-03-12 | 1990-03-12 | Method of flattening surface of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03261145A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313044B1 (en) | 1998-10-29 | 2001-11-06 | Hyundai Electronics Industries Co., Ltd. | Methods for forming a spin-on-glass layer |
| JP2005142527A (en) * | 2003-11-04 | 2005-06-02 | Lucent Technol Inc | Dielectric layer on substrate and its manufacturing method |
| JP2007173765A (en) * | 2005-11-24 | 2007-07-05 | Tokyo Electron Ltd | Substrate processing method, and apparatus therefor |
-
1990
- 1990-03-12 JP JP6053490A patent/JPH03261145A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313044B1 (en) | 1998-10-29 | 2001-11-06 | Hyundai Electronics Industries Co., Ltd. | Methods for forming a spin-on-glass layer |
| JP2005142527A (en) * | 2003-11-04 | 2005-06-02 | Lucent Technol Inc | Dielectric layer on substrate and its manufacturing method |
| JP2011119762A (en) * | 2003-11-04 | 2011-06-16 | Alcatel-Lucent Usa Inc | Dielectric layer on substrate and method of manufacturing the same |
| JP2007173765A (en) * | 2005-11-24 | 2007-07-05 | Tokyo Electron Ltd | Substrate processing method, and apparatus therefor |
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