JPH03261113A - Magnetic thin film transformer - Google Patents
Magnetic thin film transformerInfo
- Publication number
- JPH03261113A JPH03261113A JP5812390A JP5812390A JPH03261113A JP H03261113 A JPH03261113 A JP H03261113A JP 5812390 A JP5812390 A JP 5812390A JP 5812390 A JP5812390 A JP 5812390A JP H03261113 A JPH03261113 A JP H03261113A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic thin
- thin film
- primary
- coil
- secondary coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は性能を向上した高周波数領域で使用する磁性薄
膜トランスに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic thin film transformer for use in a high frequency region with improved performance.
［従来の技術］
第３図は従来の磁性薄膜トランス（電気学会マグネティ
ックス研究会資料ＷＡＧ−８７−７８，８９（１９１１
７））の１次コイル１．２次コイル２を示す。１次コイ
ル１と２次コイル２を交換しても薄膜トランスの性能は
変わらない。コイルの中央部から絶縁層を介して引き出
し線３でコイル外部の端子部４へ接続する。第３図のＡ
−Ａ’部分のトランス完成断面を第４図に示した。支持
体５、磁性薄膜６が形成され、絶縁層７を介して１次コ
イル１と２次コイル２を配置する。コイル全体を絶縁層
８て覆い、その上に磁性薄膜層９を設けて、磁性薄膜ト
ランスはでき上がっている。トランスの周辺部１０は下
の磁性薄膜６と上の磁性薄膜９が閉磁路を構成するよう
に接している。[Prior art] Figure 3 shows a conventional magnetic thin film transformer (IEEJ Magnetics Study Group material WAG-87-78, 89 (1911
7)) shows the primary coil 1 and secondary coil 2. Even if the primary coil 1 and secondary coil 2 are replaced, the performance of the thin film transformer remains unchanged. A lead wire 3 is connected from the center of the coil to a terminal portion 4 outside the coil via an insulating layer. A in Figure 3
-A' section of the completed transformer is shown in Figure 4. A support 5 and a magnetic thin film 6 are formed, and a primary coil 1 and a secondary coil 2 are arranged with an insulating layer 7 in between. A magnetic thin film transformer is completed by covering the entire coil with an insulating layer 8 and providing a magnetic thin film layer 9 thereon. In the peripheral portion 10 of the transformer, the lower magnetic thin film 6 and the upper magnetic thin film 9 are in contact with each other so as to form a closed magnetic path.
［発明が解決しようとする課題］
従来の磁性薄膜トランスでは、浮遊容量が大きいので、
トランスの高周波数化が難かしいという問題があり、そ
れを解決することが課題である。[Problem to be solved by the invention] Conventional magnetic thin film transformers have large stray capacitance, so
There is a problem that it is difficult to increase the frequency of the transformer, and the challenge is to solve this problem.
第４図に示した従来の磁性薄膜トランスの１次コイル周
辺の浮遊容量を考える。１次コイル１と下の磁性７ｓｌ
Ｉ！６との間１１の容量をＣ＋ １次コイル１と隣
接する２次コイル２との間１２の容量をＣ２，１次コイ
ル１と上の磁性薄膜層９との間１３の容量をＣ１とする
と、１次コイル１の浮遊容量は容量ＣＩ Ｃ２、’Ｃ
Ｉが重畳した形になっている。容量ＣＩ Ｃ２、Ｃ３
は次式で書き表わされる。Consider the stray capacitance around the primary coil of the conventional magnetic thin film transformer shown in FIG. Primary coil 1 and lower magnetic 7sl
I! If the capacitance of 11 between the primary coil 1 and the adjacent secondary coil 2 is C2, and the capacitance of 13 between the primary coil 1 and the upper magnetic thin film layer 9 is C1, then , the stray capacitance of the primary coil 1 is the capacitance CI C2, 'C
It has a superimposed shape. Capacity CI C2, C3
is written as the following equation.
ここでε。は真空中の誘電率で、Ｔ１は絶縁層７の比誘
電率である。Ｓｌは１次コイル１と下の磁性薄膜６の対
向している面積で、ｄｌは両者間の間隔である。同様に
、Ｃ２は絶縁層８の比誘電率、Ｓｌは１次コイル１と２
次コイル２との対向面積、ｄ２はそれらの間隔である。Here ε. is the dielectric constant in vacuum, and T1 is the dielectric constant of the insulating layer 7. Sl is the area where the primary coil 1 and the lower magnetic thin film 6 face each other, and dl is the distance between them. Similarly, C2 is the dielectric constant of the insulating layer 8, and Sl is the primary coil 1 and 2.
The area facing the secondary coil 2, d2, is the interval therebetween.
Ｓ、は１次コイル１と上の磁性薄膜９との対向面積、ｄ
３はそれらの間隔である。２次コイル２の浮遊容量は１
次コイル１の場合と全く同様であるから省略する。S is the facing area of the primary coil 1 and the upper magnetic thin film 9, d
3 is their spacing. The stray capacitance of secondary coil 2 is 1
Since it is exactly the same as the case of the next coil 1, it will be omitted.
以上のように、浮遊容量の大きさは、絶縁層７．８の材
料の比誘電率に依存していることが明確である。一般に
絶縁層として用いられている材料の比誘電率は、二酸化
ケイ素が４、フォトレジストが３〜４、アルミナが８．
５である。気体の比誘電率は１，０であるから、それに
比較して、現在用いられている材料の比誘電率は非常に
大きい。As described above, it is clear that the magnitude of the stray capacitance depends on the dielectric constant of the material of the insulating layer 7.8. The dielectric constants of materials commonly used as insulating layers are 4 for silicon dioxide, 3 to 4 for photoresist, and 8. for alumina.
It is 5. Since the dielectric constant of gas is 1.0, the dielectric constant of the materials currently used is very large compared to that.
磁性薄膜トランスは自己共振周波数以下の周波数帯域で
動作させる。従って、動作周波数帯域の上限の目安は自
己共振周波数ｆ。で、それは次式％式％
これまで述べてきた１次コイル１を例に説明すると、Ｌ
とＣは１次コイルのインダクタンスと浮遊容量である。The magnetic thin film transformer is operated in a frequency band below the self-resonant frequency. Therefore, the guideline for the upper limit of the operating frequency band is the self-resonant frequency f. So, it is the following formula % Formula % To explain it using the primary coil 1 mentioned so far as an example, L
and C are the inductance and stray capacitance of the primary coil.
（４）式から浮遊容量が大きいほど、ｆｏが低下し、磁
性薄膜トランスの動作周波数の上限が低下することがわ
かる。従って磁性薄膜トランスの動作周波数の高周波数
化を実現するためには、浮遊容量をいかに小さくするか
ということが一つの課題である。From equation (4), it can be seen that as the stray capacitance increases, fo decreases, and the upper limit of the operating frequency of the magnetic thin film transformer decreases. Therefore, in order to realize a higher operating frequency of a magnetic thin film transformer, one of the issues is how to reduce the stray capacitance.
本発明は上記の事情に鑑みてなされたちのて、浮遊容量
を小さくすることにより、トランスの動作周波数の高周
波化を実現し得る磁性薄膜トランスを提供することを目
的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a magnetic thin film transformer that can realize a higher operating frequency of the transformer by reducing stray capacitance.
［課題を解決するための手段と作用コ
本発明は上記目的を達成するために、支持体で支持され
た複数の磁性薄膜間に、金属層よりなる１次コイル及び
２次コイルが設けられた磁性薄膜トランスにおいて、１
次コイル及び２次コイルの金属層の相互間、磁性薄膜の
相互間、及び１次コイル及び２次コイルの金属層と磁性
薄膜との間の少なくともいずれか１つ以上の間に、絶縁
体球を点在させて絶縁したことを特徴とするもので、１
次コイル及び２次コイルの金属層の相互間、磁性薄膜の
相互間、及び１次コイル及び２次コイルの金属層と磁性
薄膜との間の少なくともいずれか１つ以上の間に、絶縁
体球を設けて絶縁することにより、浮遊容量を小さくし
て、トランスの動作周波数の高周波化を実現したもので
ある。[Means and effects for solving the problems] In order to achieve the above object, the present invention provides a primary coil and a secondary coil made of a metal layer are provided between a plurality of magnetic thin films supported by a support. In a magnetic thin film transformer, 1
An insulating ball is provided between the metal layers of the primary coil and the secondary coil, between the magnetic thin films, and at least between the metal layers and the magnetic thin film of the primary coil and the secondary coil. It is characterized by being insulated by interspersing it with 1
An insulating ball is provided between the metal layers of the primary coil and the secondary coil, between the magnetic thin films, and at least between the metal layers and the magnetic thin film of the primary coil and the secondary coil. By providing insulation by providing insulation, stray capacitance is reduced and the operating frequency of the transformer is increased.
［実施例］ 以下図面を参照して本発明の実施例を詳細に説明する。[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例を示す。第１図の実施例では
、下の支持体５上に磁性薄膜６、絶縁層７、更に金属層
よりなる１次コイル１及び２次コイル２を順次積層して
形成した後に、１次コイル１と２次コイル２の間にコイ
ルの厚さより、直径が大きい例えば直径数ミクロンから
数十ミクロンの絶縁体球１４を適当数点在させた。点在
は不規則でよい。絶縁体球１４は市販の真球形硬質プラ
スチック球である。その上に支持体１５に形成した磁性
薄膜１つをのせて、１次コイル１及び２次コイル２と上
の磁性薄膜１９間を絶縁する。封止用樹脂２１を磁性薄
膜トランスの周辺部に塗布し、電子部品の封止技術で真
空に封止する。または、コイルや磁性薄膜が、酸化や腐
食などの経時変化を起こさないような不活性のガスを封
入し、封止する。封入ガスは、ネオン、アルゴン、ヘリ
ウムなどの不活性ガスや、窒素のように、金属との反応
性が無視できるような気体が適当である。真空状態の比
誘電率は、その定義から当然１．０である。気体のネオ
ン、アルゴン、ヘリウム、窒素の比誘電率も１．０であ
る。従って、本発明によって（２）式と（３）式のＣ２
−１，０となり、浮遊容量は絶縁層が二酸化）１イ素の
場合の１／４となり、自己共振周波数は増大し、磁性薄
膜トランスの動作周波数の高周波数化ができる。気体封
入の方法としては、気体雰囲気、例えばアルゴン雰囲気
の中で、磁性薄膜トランスの外周を封止用樹脂２１で封
止して、アルゴン１６を封入した磁性薄膜トランスを作
製する。封入気体がネオン、ヘリウム、窒素の場合も、
封入方法はこの方法でよい。FIG. 1 shows an embodiment of the invention. In the embodiment shown in FIG. 1, a magnetic thin film 6, an insulating layer 7, and a primary coil 1 and a secondary coil 2 each made of a metal layer are sequentially laminated on a lower support 5, and then the primary coil 1 A suitable number of insulating balls 14 having a diameter larger than the thickness of the coil, for example, from several microns to several tens of microns, are scattered between the secondary coil 2 and the secondary coil 2. The dots may be irregular. The insulator sphere 14 is a commercially available true spherical hard plastic sphere. One magnetic thin film formed on the support 15 is placed thereon to insulate the primary coil 1, the secondary coil 2, and the magnetic thin film 19 above. A sealing resin 21 is applied to the periphery of the magnetic thin film transformer, and the transformer is sealed in a vacuum using an electronic component sealing technique. Alternatively, the coil or magnetic thin film is sealed with an inert gas that does not cause oxidation, corrosion, or other changes over time. The filler gas is suitably an inert gas such as neon, argon, or helium, or a gas whose reactivity with metals can be ignored, such as nitrogen. Naturally, the dielectric constant in a vacuum state is 1.0 from its definition. The dielectric constants of gases such as neon, argon, helium, and nitrogen are also 1.0. Therefore, according to the present invention, C2 in formulas (2) and (3)
-1,0, and the stray capacitance is 1/4 of that in the case where the insulating layer is 1 ion dioxide, the self-resonant frequency increases, and the operating frequency of the magnetic thin film transformer can be increased. As for the gas filling method, the outer periphery of the magnetic thin film transformer is sealed with a sealing resin 21 in a gas atmosphere, for example, an argon atmosphere, to produce a magnetic thin film transformer in which argon 16 is sealed. Even when the enclosed gas is neon, helium, or nitrogen,
This method may be used as the encapsulation method.
第２図は本発明の他の実施例を示し、下の磁性薄膜２６
と上の磁性薄膜２９が閉磁路を形成するように支持体５
に突部１７を設けると共に、支持体１５に突部２７を設
け、磁性薄膜２６．２９の周縁部を盛り上げた。突部１
７．２７はフォトレジストを用いているのて、周縁部に
数ケ所、フォトリソグラフィで気体の流通口を作って、
ガス圧が、コイル部１８と磁性薄膜の外部１つか同じに
なるようにしである。その他の作製方法は、第１図の作
製法と同じである。FIG. 2 shows another embodiment of the invention, in which the lower magnetic thin film 26
The support body 5 is arranged so that the upper magnetic thin film 29 forms a closed magnetic path.
At the same time, a protrusion 17 was provided on the support body 15, and a protrusion 27 was provided on the support body 15, and the peripheral edges of the magnetic thin films 26 and 29 were raised. Projection 1
7.27 uses photoresist, so we created several gas flow holes on the periphery using photolithography.
The gas pressure is set to be the same between the coil portion 18 and the outside of the magnetic thin film. The other manufacturing methods are the same as the manufacturing method shown in FIG.
本実施例によって上記（２）式と（３）式の比誘電率ε
２−１．０となる。この値は、酸化ケイ素やフォトレジ
スト、またはアルミナを絶縁層とした場合の比誘電率に
比較して非常に小さい。In this example, the relative dielectric constant ε of the above equations (2) and (3) is
2-1.0. This value is very small compared to the dielectric constant when silicon oxide, photoresist, or alumina is used as an insulating layer.
具体例として、現在絶縁層として、広範囲な電子部品に
応用されている酸化ケイ素（比誘電率ε２−４）と本実
施例のアルゴン（比誘電率ε２−１．０）１６を封入し
た場合を比較すると、本実施例によって、上記（２）式
の０２と（３）式のＣ９は従来の１／４に低減できる。As a specific example, consider a case in which silicon oxide (relative dielectric constant ε2-4), which is currently used in a wide range of electronic components, and argon (relative dielectric constant ε2-1.0) 16 of this example are sealed as an insulating layer. By comparison, according to this embodiment, 02 in the above equation (2) and C9 in the equation (3) can be reduced to 1/4 of the conventional value.
（１）式の０１は従来の値と変わらないが、Ｃ１、Ｃ２
、Ｃ５の重畳された浮遊容量は従来の約１／３になる。01 in equation (1) is the same as the conventional value, but C1, C2
, C5, the superimposed stray capacitance is about 1/3 that of the conventional one.
それらは１次コイル１．２次コイル２とも同じである。They are the same as the primary coil 1 and the secondary coil 2.
従って、上記（４）式の自己共振周波数は１．７倍に増
加する。その結果、磁性薄膜トランスの稼動周波数帯域
は１．７倍高周波側へ伸び、本実施例によって、磁性薄
膜トランスの高周波数化が実現できる。Therefore, the self-resonant frequency in equation (4) above increases by 1.7 times. As a result, the operating frequency band of the magnetic thin film transformer is extended to the higher frequency side by a factor of 1.7, and this embodiment can realize a higher frequency of the magnetic thin film transformer.
なお、絶縁体球をコイルの上に点在させてもよい。Note that insulating balls may be scattered on the coil.
［発明の効果］
以上述べたように本発明によれば、１次コイル及び２次
コイルの金属層の相互間、磁性薄膜の相互間、及び１次
コイル及び２次コイルの金属層と磁性薄膜との間の少な
くともいずれか１つ以上の間に、絶縁体球を設けて絶縁
することにより、浮遊容量を小さくして、トランスの動
作周波数の高周波化を実現することができる。[Effects of the Invention] As described above, according to the present invention, there is a gap between the metal layers of the primary coil and the secondary coil, between the magnetic thin films, and between the metal layers of the primary coil and the secondary coil and the magnetic thin film. By providing insulation by providing an insulating ball between at least one of the transformers and the transformer, stray capacitance can be reduced and the operating frequency of the transformer can be increased.
第１図は本発明の一実施例を示す一部欠載断面図、第２
図は本発明の他の実施例を示す一部欠載断面図、第３図
は従来の磁性薄膜トランスのコイルの平面図、第４図は
第３図Ａ−Ａ’部の断面図である。
１・・・１次コイル、２・・・２次コイル、３・・・引
き出し線、４・・・端子部、５．１５・・・支持体、６
・・・下の磁性薄膜、７．８・・絶縁層、１つ・・・上
の磁性薄膜。FIG. 1 is a partially cutaway cross-sectional view showing one embodiment of the present invention, and FIG.
3 is a plan view of a coil of a conventional magnetic thin film transformer, and FIG. 4 is a sectional view taken along line A-A' in FIG. 3. . DESCRIPTION OF SYMBOLS 1... Primary coil, 2... Secondary coil, 3... Outgoing wire, 4... Terminal part, 5.15... Support body, 6
... lower magnetic thin film, 7.8 ... insulating layer, one ... upper magnetic thin film.
Claims (2)
よりなる１次コイル及び２次コイルが設けられた磁性薄
膜トランスにおいて、１次コイル及び２次コイルの金属
層の相互間、磁性薄膜の相互間、及び１次コイル及び２
次コイルの金属層と磁性薄膜との間の少なくともいずれ
か１つ以上の間に、絶縁体球を点在させて絶縁したこと
を特徴とする磁性薄膜トランス。(1) In a magnetic thin film transformer in which a primary coil and a secondary coil made of a metal layer are provided between a plurality of magnetic thin films supported by a support, between the metal layers of the primary coil and the secondary coil, between the magnetic thin films, and between the primary coil and the secondary coil.
A magnetic thin film transformer characterized in that insulating balls are interspersed between at least one of the metal layer of the secondary coil and the magnetic thin film for insulation.
体球を介して絶縁されている金属層間の空間を真空に封
止し、もしくは気体を封入して封止したことを特徴とす
る磁性薄膜トランス。(2) The magnetic thin film transformer according to claim 1, characterized in that the space between the metal layers insulated via the insulating sphere is sealed in a vacuum or sealed with gas. Trance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812390A JPH03261113A (en) | 1990-03-12 | 1990-03-12 | Magnetic thin film transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812390A JPH03261113A (en) | 1990-03-12 | 1990-03-12 | Magnetic thin film transformer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03261113A true JPH03261113A (en) | 1991-11-21 |
Family
ID=13075204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5812390A Pending JPH03261113A (en) | 1990-03-12 | 1990-03-12 | Magnetic thin film transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03261113A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006196812A (en) * | 2005-01-17 | 2006-07-27 | Matsushita Electric Ind Co Ltd | Common-mode filter |
| JP2012135112A (en) * | 2010-12-21 | 2012-07-12 | Tohoku Ricoh Co Ltd | High voltage inverter device and output voltage adjustment method thereof |
-
1990
- 1990-03-12 JP JP5812390A patent/JPH03261113A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006196812A (en) * | 2005-01-17 | 2006-07-27 | Matsushita Electric Ind Co Ltd | Common-mode filter |
| JP2012135112A (en) * | 2010-12-21 | 2012-07-12 | Tohoku Ricoh Co Ltd | High voltage inverter device and output voltage adjustment method thereof |
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