JPH05109557A - High frequency thin film transformer and high frequency thin film inductor - Google Patents
High frequency thin film transformer and high frequency thin film inductorInfo
- Publication number
- JPH05109557A JPH05109557A JP26459491A JP26459491A JPH05109557A JP H05109557 A JPH05109557 A JP H05109557A JP 26459491 A JP26459491 A JP 26459491A JP 26459491 A JP26459491 A JP 26459491A JP H05109557 A JPH05109557 A JP H05109557A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- high frequency
- film
- inductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 59
- 239000004020 conductor Substances 0.000 abstract description 34
- 230000004907 flux Effects 0.000 abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0053—Printed inductances with means to reduce eddy currents
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、コンバータやスイッチ
ング電源等に好適で、導電性パターンにより小形に構成
された高周波特性に優れる高周波用薄膜トランスおよび
インダクタに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency thin film transformer and an inductor which are suitable for a converter, a switching power supply and the like, and which are small in size by a conductive pattern and have excellent high frequency characteristics.
【０００２】[0002]
【従来の技術】近年、電子機器構成部品の小形化・軽量
化の要請は厳しく、高品質な電力が得られるスイッチン
グ電源等においても小形化は必須の課題であり、スイッ
チング周波数の高周波化により、トランス，コンデンサ
等の部品を小さくすることで小形化が進められてきた。
半導体部品やコンデンサ部品では、ＬＳＩや積層セラミ
ックコンデンサに代表されるように、早くから薄膜技術
が用いられ、構成部品小形化の要請に十分応えてきた。
一方、トランス・インダクタ等の磁性部品は、これまで
に最も小形化にしくく、また高周波化に伴う損失増加を
抑えることが難しいため、電源の小形化を妨げる第一の
原因であった。このため、現在、高周波スイッチング電
源の体積は、磁性部品の体積によって決定されると言っ
ても過言ではない。そこで、近年、高周波化に対応すべ
く薄膜形成技術を用いた薄膜トランス・インダクタの研
究が進められ、スイッチング周波数をＭＨｚ帯域まで高
めた小形電源の開発が強く望まれるようになった。2. Description of the Related Art In recent years, demands for downsizing and weight saving of electronic equipment components have become strict, and downsizing is an essential issue even in switching power supplies and the like that can obtain high-quality power. Miniaturization has been promoted by making parts such as transformers and capacitors smaller.
For semiconductor components and capacitor components, thin film technology has been used for a long time, as represented by LSI and multilayer ceramic capacitors, and the demand for miniaturization of component parts has been sufficiently met.
On the other hand, magnetic components such as transformers and inductors are the most difficult to miniaturize so far, and it is difficult to suppress the increase in loss due to higher frequencies, so they were the first cause of hindering miniaturization of power supplies. Therefore, it is no exaggeration to say that the volume of the high-frequency switching power supply is currently determined by the volume of the magnetic component. Therefore, in recent years, research on thin-film transformer / inductors using thin-film forming technology has been advanced in order to cope with higher frequencies, and development of a compact power supply whose switching frequency has been increased to the MHz band has been strongly desired.
【０００３】図５に従来の薄膜形成技術で作成された薄
膜インダクタの構造模式図を示す。図中、１は基板、２
は絶縁層、３は磁性膜、４は導線を示している。従来、
この種の薄膜インダクタの作製は、以下のように行われ
ていた。すなわち、表面が絶縁性である基板１上に、下
部導体層をスパッタリング等の薄膜形成手法で成膜し、
これをパターニングして帯状の下部導体を形成し、この
上に絶縁層２をフォトレジスト，ＳｉＯ2，ＳｉＯ，Ａ
ｌ2Ｏ3，ポリイミド樹脂等で形成し、これを平坦化した
のち磁性膜層をスパッタリング等で形成し、パターンニ
ングして長方形形状の磁性膜３としたのち、この上にふ
たたび絶縁層２を形成し、上部導体層形成後、パターン
ニングで帯状の上部導体を形成して作製される。これら
上部導体と下部導体とはエッチングによるスルーホール
を通して接続されて、磁性膜３を取り巻くように導線４
が構成され、インダクタが作製される。FIG. 5 shows a schematic diagram of the structure of a thin film inductor manufactured by a conventional thin film forming technique. In the figure, 1 is a substrate, 2
Is an insulating layer, 3 is a magnetic film, and 4 is a conducting wire. Conventionally,
The production of this type of thin film inductor has been performed as follows. That is, the lower conductor layer is formed on the substrate 1 having an insulating surface by a thin film forming method such as sputtering,
This is patterned to form a strip-shaped lower conductor, on which an insulating layer 2 is formed by photoresist, SiO 2 , SiO, A.
1 2 O 3 , polyimide resin, etc., and flattening this, then forming a magnetic film layer by sputtering etc., patterning to form a rectangular magnetic film 3, and then again forming an insulating layer 2 thereon. After forming and forming the upper conductor layer, a strip-shaped upper conductor is formed by patterning. The upper conductor and the lower conductor are connected to each other through a through hole formed by etching, and the conductive wire 4 surrounds the magnetic film 3.
And an inductor is manufactured.
【０００４】図６は上記従来例の薄膜インダクタの中心
部磁性膜３と、導線４の構造を示す断面図である。この
ような従来例の薄膜インダクタによる高周波化のポイン
トは、スパッタリング等による薄膜形成技術を用いて、
薄い導体と磁性膜を形成し高周波における渦電流損を低
減させることにあった。FIG. 6 is a sectional view showing the structures of the central magnetic film 3 and the conductive wire 4 of the conventional thin film inductor. The point of increasing the frequency with such a conventional thin film inductor is to use a thin film forming technology such as sputtering,
It was to reduce the eddy current loss at high frequency by forming a thin conductor and a magnetic film.
【０００５】また、図８に示すように、インダクタンス
を向上させるために、下部磁性膜５を設置する場合もあ
った。Further, as shown in FIG. 8, a lower magnetic film 5 may be provided in order to improve the inductance.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来の技術により、薄膜インダクタの磁性膜，導体層を単
に薄帯化するだけでは損失の低減は十分ではなく、スイ
ッチング周波数がＭＨｚを越える領域で特性が著しく劣
化する問題がある。図７に示すように、中心部磁性膜３
コア内の磁束が磁性体端部の反磁界により、磁束が導線
４と錯交する状態が出現する。薄帯状の導線４に対し
て、平面方向から垂直に磁束が侵入するために導体内に
渦電流が発生し、高周波における導体抵抗が急激に増加
する。さらに、図８に示すように、インダクタンスを向
上させるために、下部磁性膜５を設置した場合、さらに
低い周波数から導体抵抗の増加が現れる。この高周波に
おける導体抵抗の増加は、Ｑ値，効率の著しい低下を来
たし、使用できる周波数の上限を決定する。However, according to the above-mentioned conventional technique, it is not sufficient to reduce the loss simply by thinning the magnetic film and the conductor layer of the thin-film inductor, and the characteristics are reduced in the region where the switching frequency exceeds MHz. Is significantly deteriorated. As shown in FIG. 7, the central magnetic film 3
Due to the demagnetizing field of the magnetic flux in the core, the magnetic flux intersects with the conducting wire 4 in a state where it appears. Since magnetic flux penetrates perpendicularly to the thin strip-shaped conductor 4 from the plane direction, an eddy current is generated in the conductor, and the conductor resistance at a high frequency rapidly increases. Further, as shown in FIG. 8, when the lower magnetic film 5 is installed to improve the inductance, the conductor resistance increases from a lower frequency. This increase in conductor resistance at high frequencies causes a significant decrease in Q value and efficiency, and determines the upper limit of usable frequencies.
【０００７】本発明は、上記問題点を解決するためにな
されたものであり、その目的は、高周波における導体抵
抗の増加を低減し、使用できる周波数ならびに効率を向
上させることにある。The present invention has been made to solve the above problems, and an object thereof is to reduce an increase in conductor resistance at high frequencies and improve usable frequencies and efficiency.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
め、本発明の高周波用薄膜トランスおよび高周波用薄膜
インダクタにおいては、磁性膜を取り巻くように導線を
絶縁して螺旋状に巻回する構造の薄膜トランスおよび薄
膜インダクタにおいて、上記磁性膜の上下に磁性膜を配
置し、かつ、それぞれの磁性膜が互いに磁気的に接続さ
れた構造を持つ構成としたことを特徴としている。In order to achieve the above object, in a high frequency thin film transformer and a high frequency thin film inductor of the present invention, a conductor is insulated so as to surround a magnetic film and is wound in a spiral shape. In the thin film transformer and the thin film inductor, the magnetic film is disposed above and below the magnetic film, and the magnetic films are magnetically connected to each other.
【０００９】[0009]
【作用】本発明の高周波薄膜トランスおよびインダクタ
では、構成する磁性膜を互いに磁気的に接続し、磁束が
これらの磁性膜を還流する構造とすることにより、磁束
と導体の錯交を減じ、渦電流の発生を低減し、高周波に
おける導体抵抗の増加を抑制して効率の向上および使用
できる周波数の高周波化を可能にしている。In the high frequency thin film transformer and inductor of the present invention, the magnetic films to be formed are magnetically connected to each other so that the magnetic flux returns to these magnetic films to reduce the crossing of the magnetic flux and the conductor, By reducing the generation of electric current and suppressing the increase in conductor resistance at high frequencies, it is possible to improve efficiency and increase the usable frequency.
【００１０】[0010]
【実施例】本発明の実施例を薄膜インダクタを例とし、
図面を参照して詳細に説明する。図１は本発明の実施例
を示す平面図である。図中、１は基板、２は絶縁層、３
は中心部磁性膜、４は導線、５は下部磁性膜、６は上部
磁性膜である。本実施例は、中心部磁性膜３を取り巻く
ように導線４を絶縁して螺旋状に巻回する構造の薄膜ト
ランスにおいて、中心部磁性膜３の上下に上部磁性膜６
と下部磁性膜５を配置し、かつ、それぞれの磁性膜３，
５，６が互いに磁気的に接続された構造を持つ。このよ
うに本実施例は、図８に示す従来例の磁性膜が開磁路構
造を持つのに対し、上部磁性膜６、中心部磁性膜３およ
び下部磁性膜５を接続し、閉磁路構造をとっている。EXAMPLE An example of the present invention is exemplified by a thin film inductor,
A detailed description will be given with reference to the drawings. FIG. 1 is a plan view showing an embodiment of the present invention. In the figure, 1 is a substrate, 2 is an insulating layer, 3
Is a central magnetic film, 4 is a conducting wire, 5 is a lower magnetic film, and 6 is an upper magnetic film. In this embodiment, in the thin film transformer having a structure in which the conductor wire 4 is insulated so as to surround the central magnetic film 3 and spirally wound, the upper magnetic film 6 is formed above and below the central magnetic film 3.
And the lower magnetic film 5, and the respective magnetic films 3,
It has a structure in which 5 and 6 are magnetically connected to each other. As described above, in the present embodiment, the magnetic film of the conventional example shown in FIG. 8 has an open magnetic circuit structure, whereas the upper magnetic film 6, the central magnetic film 3 and the lower magnetic film 5 are connected to each other to form a closed magnetic circuit structure. Is taking.
【００１１】この実施例の作製方法は、図１に示した従
来例と同様な工程で行う。すなわち、絶縁層２が形成さ
れていて表面が絶縁性である基板１上に、磁性膜層をス
パッタリング等で形成し、パターンニングして長方形形
状の下部磁性膜５としたのち、この上にふたたび絶縁層
２を形成する。この上に下部導体層をスパッタリング等
の薄膜形成手法で成膜し、これをパターニングして帯状
の下部導体を形成し、この上に絶縁層２をフォトレジス
ト，ＳｉＯ2，ＳｉＯ，Ａｌ2Ｏ3，ポリイミド樹脂等で
形成し、これを平坦化したのち磁性膜層をスパッタリン
グ等で形成し、パターンニングして長方形形状の中心部
磁性膜３としたのち、この上にふたたび絶縁層２を形成
し、上部導体層形成後、パターンニングで帯状の上部導
体を形成する。これら上部導体と下部導体とはエッチン
グによるスルーホールを通して接続されて、中心部磁性
膜３を取り巻くように導線４が構成される。さらに、こ
れらの上部に絶縁層２を形成したのち、これを平坦化し
たのち磁性膜層をスパッタリング等で形成し、パターン
ニングして長方形形状の上部磁性膜６とし、インダクタ
が作製される。ここで、本実施例では、各磁性膜のパタ
ーン設計の際に磁路方向を長めに設計することで、各磁
性膜の磁路方向端部でそれぞれを近接させ、容易に磁気
的な接続を得る。これにより、閉磁路構造としている。The manufacturing method of this embodiment is performed in the same steps as those of the conventional example shown in FIG. That is, a magnetic film layer is formed by sputtering or the like on a substrate 1 having an insulating layer 2 and an insulating surface, and patterned to form a rectangular lower magnetic film 5, which is then re-applied. The insulating layer 2 is formed. A lower conductor layer is formed on this by a thin film forming method such as sputtering, and this is patterned to form a strip-shaped lower conductor, on which an insulating layer 2 is provided with a photoresist, SiO 2 , SiO, Al 2 O 3 , A polyimide resin or the like, and after flattening the same, a magnetic film layer is formed by sputtering or the like and patterned to form a rectangular central magnetic film 3, and then an insulating layer 2 is formed thereon. After forming the upper conductor layer, a strip-shaped upper conductor is formed by patterning. The upper conductor and the lower conductor are connected through a through hole formed by etching, and a conductor wire 4 is formed so as to surround the central magnetic film 3. Further, an insulating layer 2 is formed on the upper portion of these layers, and after planarizing this, a magnetic film layer is formed by sputtering or the like and patterned to form a rectangular upper magnetic film 6, and an inductor is manufactured. Here, in the present embodiment, by designing the magnetic path direction to be long when designing the pattern of each magnetic film, the magnetic film direction ends of each magnetic film are brought close to each other to facilitate magnetic connection. obtain. As a result, a closed magnetic circuit structure is formed.
【００１２】一例として、計算機によるシミュレーショ
ン結果を図２，図３に示す。図２は導体の交流抵抗の変
化を５０ＭＨｚ／１ｋＨｚで計算し、中心部磁性膜３と
下部磁性膜５からなる開磁路構造の従来例のインダクタ
（１）と本発明実施例構造のインダクタ（２）を比較し
たものである。開磁路構造インダクタ（１）では導体の
交流抵抗が著しく増加しているのに対し、本発明実施例
構造のインダクタ（２）では数倍程度の増加である。図
３は上記開磁路構造のインダクタ（１）と本発明実施例
構造のインダクタ（２）のインダクタンスの値を比較し
たものである。図より明らかに本発明実施例構造のイン
ダクタ（２）の方が、同一寸法で大きなインダクタンス
が得られることが明らかである。As an example, simulation results obtained by a computer are shown in FIGS. In FIG. 2, the change in the AC resistance of the conductor is calculated at 50 MHz / 1 kHz, and the inductor (1) of the conventional example having the open magnetic circuit structure including the central magnetic film 3 and the lower magnetic film 5 and the inductor ( This is a comparison of 2). In the open magnetic circuit structure inductor (1), the AC resistance of the conductor is remarkably increased, whereas in the inductor (2) having the structure of the embodiment of the present invention, it is increased by several times. FIG. 3 compares the inductance values of the inductor (1) having the open magnetic circuit structure and the inductor (2) having the structure according to the embodiment of the present invention. It is clear from the figure that the inductor (2) having the structure according to the embodiment of the present invention can obtain a larger inductance with the same size.
【００１３】以上のように構成した実施例の作用を図８
の従来例と比較して述べる。図４はインダクタンスの周
波数特性および導体抵抗について、上記２種のトランス
について比較したものである。図中（１）は図８の従来
例の薄膜インダクタの場合、図中（２）は本実施例によ
る薄膜インダクタの場合を示す。始めに、導体抵抗の値
は低周波域でほぼ同一であるが、（１）の従来例の薄膜
インダクタでは、１ＭＨｚ付近から増加しはじめている
のに対し、（２）の本発明実施例の薄膜インダクタで
は、数十ＭＨｚまで低抵抗を維持した後、徐々に増加す
る程度である。一方、インダクタンスについても、
（１）の従来例の場合、導体抵抗の増加に合わせて、数
ＭＨｚ程度からインダクタンスが低下しているのに対
し、（２）の本発明実施例では数十ＭＨｚ程度まで周波
数特性が改善されている。Ｑ値で評価すると、本実施例
の薄膜インダクタは従来例に比べ一桁以上向上している
ことが明らかである。The operation of the embodiment configured as described above is shown in FIG.
This will be described in comparison with the conventional example. FIG. 4 compares the frequency characteristics of the inductance and the conductor resistance of the above two types of transformers. In the figure, (1) shows the case of the conventional thin-film inductor in FIG. 8, and (2) shows the case of the thin-film inductor according to the present embodiment. First, although the value of the conductor resistance is almost the same in the low frequency range, in the thin film inductor of the conventional example of (1), the value starts to increase from around 1 MHz, whereas in the thin film of the example of the present invention of (2). In the inductor, the low resistance is maintained up to several tens of MHz, and then the resistance is gradually increased. On the other hand, regarding the inductance,
In the case of the conventional example of (1), the inductance decreases from about several MHz in accordance with the increase of the conductor resistance, whereas in the embodiment of the present invention of (2), the frequency characteristic is improved to about several tens of MHz. ing. When evaluated by the Q value, it is clear that the thin film inductor of this example is improved by one digit or more as compared with the conventional example.
【００１４】なお、磁気的な接続は、多少の空隙があっ
ても結合するため、磁性膜間に絶縁層が挿入されていて
も、上記と同様な効果が得られることは言うまでもな
い。また、本実施例では薄膜インダクタを例にとり説明
を行ったが、薄膜トランスについても同様な効果が得ら
れる事は言うまでもない。このように本発明は、その主
旨に沿って種々に応用され、種々の実施例を取り得るも
のである。Since the magnetic connection is made even if there are some voids, it is needless to say that the same effect as described above can be obtained even if the insulating layer is inserted between the magnetic films. Further, in the present embodiment, the thin film inductor has been described as an example, but it goes without saying that the same effect can be obtained also in the thin film transformer. As described above, the present invention can be variously applied and various embodiments can be taken according to the gist thereof.
【００１５】[0015]
【発明の効果】以上の説明で明らかなように、本発明の
高周波用薄膜トランスおよびインダクタによれば、高周
波における導体抵抗を低減することが可能となり、効率
が上昇するとともに、同一床面積において、より高いイ
ンダクタンスを得る事が可能となる。このことにより、
より一層の小形化・高効率な特性を有する薄膜インダク
タを提供することが可能となる。As is apparent from the above description, according to the high frequency thin film transformer and inductor of the present invention, it becomes possible to reduce the conductor resistance at high frequencies, the efficiency is increased, and at the same floor area, It is possible to obtain higher inductance. By this,
It is possible to provide a thin film inductor having further miniaturized and highly efficient characteristics.
【図１】本発明の一実施例の構造を示す断面図FIG. 1 is a sectional view showing the structure of an embodiment of the present invention.
【図２】シミュレーションによる開磁路構造インダクタ
と本発明の上記実施例構造のインダクタの交流抵抗の比
較図FIG. 2 is a comparison diagram of AC resistances of an open magnetic circuit structure inductor and an inductor having the above-described embodiment structure of the present invention by simulation.
【図３】シミュレーションによる開磁路構造のインダク
タと本発明の上記実施例構造のインダクタンスの比較図FIG. 3 is a comparison diagram of an inductor having an open magnetic circuit structure and an inductance of the above-described embodiment structure of the present invention by simulation.
【図４】上記実施例と従来例のインダクタンスおよび抵
抗の周波数依存性を示す比較特性図FIG. 4 is a comparative characteristic diagram showing the frequency dependence of the inductance and resistance of the above-mentioned example and the conventional example.
【図５】従来例の構造模式図FIG. 5 is a structural schematic diagram of a conventional example.
【図６】上記従来例の断面図FIG. 6 is a sectional view of the above conventional example.
【図７】上記従来例における漏れ磁束発生の模式図FIG. 7 is a schematic diagram of leakage magnetic flux generation in the above conventional example.
【図８】他の従来例における漏れ磁束発生の模式図FIG. 8 is a schematic diagram of leakage flux generation in another conventional example.
１…基板、２…絶縁層、３…中心部磁性膜、４…導線、
５…下部磁性膜、６…上部磁性膜。1 ... Substrate, 2 ... Insulating layer, 3 ... Central magnetic film, 4 ... Conductive wire,
5 ... Lower magnetic film, 6 ... Upper magnetic film.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｆ 41/04 Ｃ 8019−5Ｅ 41/18 7371−5Ｅ (72)発明者 田子 章男 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 (72)発明者 柳沢 佳一 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication location H01F 41/04 C 8019-5E 41/18 7371-5E (72) Inventor Akio Tago Chiyoda, Tokyo Yukomachi 1-1-6 Nihon Telegraph and Telephone Corp. (72) Inventor Keiichi Yanagisawa 1-1-6 Uchisaiwaicho Chichida-ku, Tokyo Nihon Telegraph and Telephone Corp.
Claims (2)
螺旋状に巻回する構造の薄膜トランスにおいて、上記磁
性膜の上下に磁性膜を配置し、かつ、それぞれの磁性膜
が互いに磁気的に接続された構造を持つことを特徴とす
る高周波用薄膜トランス。1. A thin film transformer having a structure in which a conductive wire is insulated so as to surround a magnetic film and is spirally wound. Magnetic films are arranged above and below the magnetic film, and the respective magnetic films are magnetic from each other. A high-frequency thin-film transformer characterized by having a structure connected to.
螺旋状に巻回する構造の薄膜インダクタにおいて、上記
磁性膜の上下に磁性膜を配置し、かつ、それぞれの磁性
膜が互いに磁気的に接続された構造を持つことを特徴と
する高周波用薄膜インダクタ。2. A thin film inductor having a structure in which a conductive wire is insulated and wound in a spiral shape so as to surround the magnetic film. Magnetic films are arranged above and below the magnetic film, and the respective magnetic films are magnetic from each other. A high frequency thin film inductor having a structure connected to a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26459491A JPH05109557A (en) | 1991-10-14 | 1991-10-14 | High frequency thin film transformer and high frequency thin film inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26459491A JPH05109557A (en) | 1991-10-14 | 1991-10-14 | High frequency thin film transformer and high frequency thin film inductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05109557A true JPH05109557A (en) | 1993-04-30 |
Family
ID=17405475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26459491A Pending JPH05109557A (en) | 1991-10-14 | 1991-10-14 | High frequency thin film transformer and high frequency thin film inductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05109557A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100392254B1 (en) * | 2000-12-05 | 2003-07-23 | 한국전자통신연구원 | Thin film Inductor and Fabrication Method of Thin film Inductor |
| KR100680811B1 (en) * | 2006-11-20 | 2007-02-09 | 주식회사 인성전자 | Device having transformer able to prevention on eddy current loss |
| JP2007273804A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| JP2007273803A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| JP2007273802A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| KR100998962B1 (en) * | 2003-07-21 | 2010-12-09 | 매그나칩 반도체 유한회사 | Method for manufacturing inductor incorporating thereinto core portion |
| CN106910602A (en) * | 2017-01-24 | 2017-06-30 | 华为机器有限公司 | A kind of thin film inductor and power-switching circuit |
| EP3719819A1 (en) * | 2019-04-02 | 2020-10-07 | Nokia Technologies Oy | Inductive components and methods of forming inductive components |
-
1991
- 1991-10-14 JP JP26459491A patent/JPH05109557A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100392254B1 (en) * | 2000-12-05 | 2003-07-23 | 한국전자통신연구원 | Thin film Inductor and Fabrication Method of Thin film Inductor |
| KR100998962B1 (en) * | 2003-07-21 | 2010-12-09 | 매그나칩 반도체 유한회사 | Method for manufacturing inductor incorporating thereinto core portion |
| JP2007273804A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| JP2007273803A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| JP2007273802A (en) * | 2006-03-31 | 2007-10-18 | Tdk Corp | Thin-film device |
| JP4706927B2 (en) * | 2006-03-31 | 2011-06-22 | Ｔｄｋ株式会社 | Thin film device |
| JP4736902B2 (en) * | 2006-03-31 | 2011-07-27 | Ｔｄｋ株式会社 | Thin film device |
| KR100680811B1 (en) * | 2006-11-20 | 2007-02-09 | 주식회사 인성전자 | Device having transformer able to prevention on eddy current loss |
| CN106910602A (en) * | 2017-01-24 | 2017-06-30 | 华为机器有限公司 | A kind of thin film inductor and power-switching circuit |
| EP3719819A1 (en) * | 2019-04-02 | 2020-10-07 | Nokia Technologies Oy | Inductive components and methods of forming inductive components |
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