JPH03257952A - Manufacture of heat radiating plate for hybrid integrated circuit - Google Patents
Manufacture of heat radiating plate for hybrid integrated circuitInfo
- Publication number
- JPH03257952A JPH03257952A JP2058392A JP5839290A JPH03257952A JP H03257952 A JPH03257952 A JP H03257952A JP 2058392 A JP2058392 A JP 2058392A JP 5839290 A JP5839290 A JP 5839290A JP H03257952 A JPH03257952 A JP H03257952A
- Authority
- JP
- Japan
- Prior art keywords
- heat radiating
- radiating plate
- joggle
- heat sink
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000463 material Substances 0.000 abstract description 13
- 238000007747 plating Methods 0.000 abstract description 10
- 229910052742 iron Inorganic materials 0.000 abstract description 9
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000002265 prevention Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011122 softwood Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は例えば自動車電装品用混酸集積回路のパッケ
ージの一部に使用されている放熱板の製造法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a heat sink used, for example, in a part of a package of a mixed acid integrated circuit for automobile electrical equipment.
第２図は従来の混成集積回路のパッケージを示す断面図
、第３園は第２囚に示すＡ部の拡大断面図である。図に
かいて、（１）はＡｌの放熱板、伐）はアルミナ両面メ
タライズ基板で、パフトランジスタチップ（４）と放熱
板（１）を絶縁している。（３）はＣｕ等の一部ヒート
シンク、（５）ばＡ１１ｌで混成集積回路基板（７）
ト、パワートランジスタチップ（４）及び混成集積回路
基板（７）のＧＮＤフィンと、放熱板（１）から打上げ
たダボ（１１）との結線に使用される。（６）はワイヤ
ポンディング用紅台、（８）は外部リード線、（９）は
パッケージカバー （１０）はダボ打上げ部、（１２）
ばか置換−Ｎｉメツキ等によるメツキ層である。Fig. 2 is a sectional view showing a conventional hybrid integrated circuit package, and Fig. 3 is an enlarged sectional view of part A shown in the second figure. In the figure, (1) is an Al heat sink, and (2) is an alumina double-sided metallized substrate, which insulates the puff transistor chip (4) and the heat sink (1). (3) is a partial heat sink such as Cu, (5) is a hybrid integrated circuit board (7) made of A11L.
It is used to connect the GND fin of the power transistor chip (4) and the hybrid integrated circuit board (7) to the dowel (11) launched from the heat sink (1). (6) is a red stand for wire bonding, (8) is an external lead wire, (9) is a package cover, (10) is a dowel launching part, (12)
This is a plating layer using Baka substitution-Ni plating or the like.
（イ）ダボはプレス加工により、打上げられるので、ダ
ボ打上げ部は第３図に示すごとく平坦ではなく、Ａｌ線
のポンディング性を向上させるためには、研磨し平坦に
しなければならない。又、アルミナ両面メタライズ基板
をハンダ付する為表面にあるメツキ層もＡｌ線のボンデ
ィング性を向上させる為には、研磨し、メツキ層を取除
き、紅地肌を露出させなければならない。(a) Since the dowel is launched by press working, the dowel launch part is not flat as shown in Figure 3, and must be polished to make it flat in order to improve the bonding properties of the Al wire. Furthermore, in order to improve the bonding properties of the Al wire, the plating layer on the surface of the alumina double-sided metallized substrate for soldering must be polished to remove the plating layer and expose the red background.
（ロ）放熱板に片面のみＮ１メツキ等がされているので
熱膨張係数の違いにより、７〜ミナ両面メタライズ基板
のハンダ付工程等の熱処理により放熱板が反る。(b) Since the heat sink is plated with N1 on only one side, the heat sink warps due to the difference in thermal expansion coefficient during heat treatment such as the soldering process of a 7-mina double-sided metallized board.
（ハ）ダボの打上げによるダボ根元にクラックが発生す
ることを防止の為、紅素材を軟材にしなければならず、
打上げ、研磨の結果、ダボ表面に傷が入りやすく、又打
上げ高さは、放熱板厚みの主線下という制約がある。(c) In order to prevent cracks from occurring at the base of the dowel due to the dowel being launched, the red material must be made of soft wood.
As a result of launching and polishing, the dowel surface is likely to be scratched, and the launch height is restricted to be below the main line of the thickness of the heat sink.
に）放熱板はＡ１材使用の為、高価であること、更にハ
ンダ付する為には、か置換−Ｎｉメツキ等の高価なメツ
キ方法を採用しなければならない。2) The heat sink is made of A1 material, so it is expensive, and in order to solder it, an expensive plating method such as substitution-Ni plating must be used.
などの問題点があった。There were problems such as:
この発明は以上の様な問題点を解決するためになされた
もので、材料価格の低減と、放熱板の反りを低減し、ダ
ボの高さを高く、かつ傷が入りにくくする混成集積回路
用放熱板の製造方法を提供することを目的とする。This invention was made in order to solve the above-mentioned problems, and it reduces the cost of materials, reduces the warping of the heat sink, increases the height of the dowels, and makes it difficult to get scratches for hybrid integrated circuits. An object of the present invention is to provide a method for manufacturing a heat sink.
この発明に係る混成集積回路用放熱板のＩＲａ方法は放
熱板と打上げダボを異種金属とし、Ａｌ材のダボを放熱
板にカシメることによりダボを形成する。In the IRa method for a heat sink for a hybrid integrated circuit according to the present invention, the heat sink and the launch dowel are made of different metals, and the dowel is formed by caulking a dowel made of Al material to the heat sink.
この発明によれば放熱板を従来のＡｌ材から他の膨張係
数の小さい金属（例えば鉄材）に変えることにより、放
熱板に貼付ける混成集積回路基板（アルミナ等）との熱
応力の緩和と、機械的強度・向上でａ改築積回路基板の
クツツク防止へ寄与する。According to this invention, by changing the heat sink from the conventional Al material to another metal with a small coefficient of expansion (for example, iron), the thermal stress between the hybrid integrated circuit board (alumina, etc.) attached to the heat sink can be alleviated. Contributes to preventing cracking of rebuilt circuit boards by improving mechanical strength.
［実施例］ 次にこの発明の一実施例を囚について説明する。[Example] Next, an embodiment of the present invention will be explained regarding a prisoner.
第１図は第２図の従来例に示すＡ部に相当する部分の拡
大断面図である。、卸にかいて、（１３）は高硬度短材
（例えば、Ａ３０５６ Ｈ２Ｓ等）によるダボ、（１６
）はカシメ部、（１４）はメツキ層、（１５）はダボ（
１３）とは異種の金属（例えば安価な鉄材等）による放
熱板である。FIG. 1 is an enlarged sectional view of a portion corresponding to section A shown in the conventional example of FIG. , wholesaler, (13) is a dowel made of high hardness short material (for example, A3056 H2S, etc.), (16
) is the caulking part, (14) is the plating layer, (15) is the dowel (
13) is a heat sink made of a different type of metal (for example, inexpensive iron material).
放熱板（１５）は安価な鉄材にハンダ付と、反り防止の
為両面Ｎｉメツキを施した後、打抜き穴あけ加工を施す
。（又は加工順序は逆でも可）。The heat dissipation plate (15) is made of an inexpensive iron material with soldering and Ni plating on both sides to prevent warping, followed by punching and drilling. (Or the processing order can be reversed).
ダボ（１３）は成形後放熱板（１５）に打込みカシメを
行う。After forming the dowel (13), the dowel (13) is driven into the heat sink (15) and caulked.
凶−１に於いて、（１５）をＡ１以外の異種金属、例え
ば鉄等とし、（１３）を高硬度短材とすることが可能と
なった。（１５）を鉄にすることで、加熱時のソリを低
減出来、−放熱特性も損うことは無かった。In Ko-1, it became possible to make (15) a different metal other than A1, such as iron, and to make (13) a high-hardness short material. By using iron for (15), it was possible to reduce warpage during heating, and the heat dissipation characteristics were not impaired.
又（１３）ダボを高硬度化することで、ダボ平坦部への
傷も低減出来た。Furthermore, (13) by increasing the hardness of the dowel, damage to the flat part of the dowel could be reduced.
この発明による混成集積回路用放熱板の製造方法によれ
ば
イ、放熱板の反りが防止出来る。According to the method of manufacturing a heat sink for a hybrid integrated circuit according to the present invention, warping of the heat sink can be prevented.
ロ、ダボ端面の平坦部への傷が入υにくくなる。B. The flat part of the dowel end face is less likely to be scratched.
ハ、放熱板が安価となる。C. The heat sink becomes cheaper.
二、ダボの高さが制約されない。Second, the height of the dowel is not restricted.
ホ、高価なプレス金型が不要となろう などの効果がある。E, there will be no need for expensive press molds. There are effects such as
第１図はこの発明に係る混成集積回路用放熱板の製造方
法の一実施例による混成集積回路のパッケージのダボ設
置部分を示す拡大断面図、第２図は従来の混成集積回路
のパッケージを示す断面図、第３図は第２囚に示すＡ部
の拡大断面図である。
図にシいて、（１３）はダボ、（１４）はメツキ層、（
１５）は放熱板、（１６）はカシメ部である。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is an enlarged sectional view showing the dowel installation part of a hybrid integrated circuit package according to an embodiment of the method for manufacturing a heat sink for a hybrid integrated circuit according to the present invention, and FIG. 2 shows a conventional hybrid integrated circuit package. A sectional view, FIG. 3 is an enlarged sectional view of part A shown in the second prisoner. In the figure, (13) is a dowel, (14) is a plating layer, (
15) is a heat sink, and (16) is a caulking part. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
イヤボンドするダボと、放熱板を異種金属とし、放熱板
にＡｌのダボをカシメ固定することを特徴とする混成集
積回路用放熱板の製造方法。A method for manufacturing a heat sink for a hybrid integrated circuit, comprising: a dowel to which Al wire is wire-bonded; the heat sink is made of different metals; and the Al dowel is fixed to the heat sink by caulking. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058392A JPH03257952A (en) | 1990-03-08 | 1990-03-08 | Manufacture of heat radiating plate for hybrid integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2058392A JPH03257952A (en) | 1990-03-08 | 1990-03-08 | Manufacture of heat radiating plate for hybrid integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03257952A true JPH03257952A (en) | 1991-11-18 |
Family
ID=13083078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2058392A Pending JPH03257952A (en) | 1990-03-08 | 1990-03-08 | Manufacture of heat radiating plate for hybrid integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03257952A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010073794A (en) * | 2008-09-17 | 2010-04-02 | Mitsui High Tec Inc | Lead frame with dissipation plate and method for manufacturing it |
-
1990
- 1990-03-08 JP JP2058392A patent/JPH03257952A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010073794A (en) * | 2008-09-17 | 2010-04-02 | Mitsui High Tec Inc | Lead frame with dissipation plate and method for manufacturing it |
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