JPH10247763A - Circuit board and manufacture thereof - Google Patents

Circuit board and manufacture thereof

Info

Publication number
JPH10247763A
JPH10247763A JP5047697A JP5047697A JPH10247763A JP H10247763 A JPH10247763 A JP H10247763A JP 5047697 A JP5047697 A JP 5047697A JP 5047697 A JP5047697 A JP 5047697A JP H10247763 A JPH10247763 A JP H10247763A
Authority
JP
Japan
Prior art keywords
circuit
metal
circuit board
ceramic substrate
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5047697A
Other languages
Japanese (ja)
Inventor
Kenji Kadota
健次 門田
Toichi Takagi
東一 高城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP5047697A priority Critical patent/JPH10247763A/en
Publication of JPH10247763A publication Critical patent/JPH10247763A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer

Abstract

PROBLEM TO BE SOLVED: To enable a circuit board to be protected against cracking and improved in reliability by a method wherein a metal circuit or a circuit metal plate and a metal heat sink are bonded to both the sides of a ceramic board keeping the ceramic board which is intrinsically free from warpage deflected in one direction, and moreover the metal circuit or the circuit metal plate is so warped as to be concave. SOLUTION: A metal circuit or a circuit metal plate 2 and a metal heat sink 3 are bonded to both the sides of a ceramic board keeping the ceramic board which is intrinsically free from warpage deflected in one direction, whereby a circuit board warped in a prescribed direction can be obtained. When a module is formed by the use of the warped circuit board, the module is generally joined flat to a heat sink or used as fixed to a stationary part, so that cracks occur less in the circuit board if a compressive stress is previously induced in the required surface of the circuit board, and the circuit board can be improved in reliability.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高い信頼性、放熱
性を要する電子部品のパワーモジュール等に使用される
セラミックス基板上に金属回路を配設した回路基板及び
その回路基板の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board having a metal circuit provided on a ceramic substrate used for a power module of an electronic component requiring high reliability and heat radiation, and a method of manufacturing the circuit board.

【0002】[0002]

【従来の技術】従来から各種電子機器の構成部品とし
て、アルミナ(Al23)、窒化アルミニウム(Al
N)、酸化ベリリウム(BeO)などのセラミックス焼
結体基板表面に導電層として銅(Cu)等の回路用金属
板を一体に接合した回路基板が広く使用されている。
2. Description of the Related Art Conventionally, alumina (Al 2 O 3 ), aluminum nitride (Al
N), beryllium oxide (BeO), and other ceramic sintered body substrates have been widely used as circuit boards in which a circuit metal plate such as copper (Cu) is integrally joined as a conductive layer.

【0003】これらの回路基板は、熱伝導性および電気
伝導性に優れた銅等の金属により回路板を形成している
ので、回路動作の遅延が少ないとともに回路配線の寿命
も長いという利点がある。また半田等の接合材料に対す
る濡れ性が良く、セラミックス焼結体表面に半導体素子
(ICチップ)や電極板を高い接合強さで接合すること
ができる。その結果、半導体素子から発生する熱を十分
に放散し、素子の動作信頼性を良好に保つことができ
る。また、セラミックス基板の前記回路面とは反対側に
銅等の放熱用金属板を接合することにより、前記放熱用
金属板を介して接合されるヒートシンクへの熱放散を助
長するばかりでなく、セラミックス基板の応力緩和およ
び熱変形防止の目的も達成できるという利点を有してい
る。
[0003] In these circuit boards, the circuit board is formed of a metal such as copper which is excellent in heat conductivity and electric conductivity. Therefore, there is an advantage that a delay in circuit operation is small and a life of circuit wiring is long. . In addition, the semiconductor element (IC chip) and the electrode plate can be bonded to the surface of the ceramic sintered body with high bonding strength because of good wettability to a bonding material such as solder. As a result, heat generated from the semiconductor element can be sufficiently dissipated, and the operation reliability of the element can be kept good. Further, by joining a heat-dissipating metal plate such as copper to the ceramic substrate on the side opposite to the circuit surface, not only promotes heat dissipation to a heat sink joined through the heat-dissipating metal plate, but also This has the advantage that the objects of stress relaxation of the substrate and prevention of thermal deformation can also be achieved.

【0004】[0004]

【発明が解決しようとする課題】セラミック基板を用い
る回路基板に関しては、回路基板のヒートシンクへの接
合、或いは電極等を搭載接合するなどのモジュールへの
実装時における熱応力やモジュールを各種装置へ装着す
る時にかかる荷重に原因して、セラミックス基板に微小
クラックが発生することがある。特に前記微小クラック
は金属回路間や金属回路の端部付近に発生しやすい。前
記微小クラックはモジュールが使用時に受ける繰り返し
の加熱冷却に原因する応力により拡大し、比較的大きな
クラックに成長すると今度はクラックの部分で絶縁不良
となり、パワーモジュールが使用不能となる問題があ
る。
With respect to a circuit board using a ceramic substrate, thermal stress during mounting to a module, such as bonding the circuit board to a heat sink or mounting and bonding electrodes, etc., and mounting the module to various devices. The micro-cracks may be generated on the ceramics substrate due to the load applied at the same time. In particular, the microcracks tend to occur between metal circuits or near the ends of the metal circuits. The minute cracks are enlarged by stress due to repeated heating and cooling applied to the module during use. If the cracks grow into relatively large cracks, insulation failure occurs at the cracks, and the power module becomes unusable.

【0005】従来より、回路基板の製造方法としてはい
くつかの方法が知られているが、良好な生産性を得るた
めには、フルエッチ法がよく使われる。フルエッチ法
は、セラミックス基板と金属板とをろう材ペーストや基
板と金属の共晶を用いるなどの方法で接合し、金属回路
とする金属板上に回路パターンをエッチングレジストに
より形成させた後、エッチング処理により不要部分を除
去する方法である。フルエッチ法は、生産性は良好であ
るが、不要な金属回路及びろう材や共晶の除去工程を経
るため、エッチング後の金属回路間のセラミックス基板
に大きな引張応力が残留し、前述の微小クラックが発生
しやすい。
Conventionally, several methods have been known as a method for manufacturing a circuit board. In order to obtain good productivity, a full-etch method is often used. In the full-etch method, a ceramic substrate and a metal plate are joined by a method such as using a brazing material paste or a eutectic of the substrate and the metal, and a circuit pattern is formed on the metal plate to be a metal circuit by an etching resist. This is a method of removing unnecessary portions by etching. Although the full-etch method has good productivity, it undergoes an unnecessary metal circuit and a step of removing a brazing material and a eutectic. Cracks are easy to occur.

【0006】また、回路基板の他の製造方法として搭載
法が知られているが、搭載法はセラミックス基板上にろ
う材ペーストを回路パターン状に印刷し、回路パターン
に予め形成した金属板をろう材ペースト上に配置し接合
する方法で、エッチングプロセスを経ないので残留応力
は比較的小さい。しかし、スクリーン印刷法によるろう
材塗布量に限界があること、高度な印刷技術が必要であ
ること、工程の煩雑化による生産性が低下することなど
の問題がある。
A mounting method is known as another method of manufacturing a circuit board. In the mounting method, a brazing material paste is printed in a circuit pattern on a ceramic substrate, and a metal plate previously formed on the circuit pattern is soldered. The method of arranging and joining on the material paste does not go through an etching process, so that the residual stress is relatively small. However, there are problems such as that the amount of brazing material applied by the screen printing method is limited, that advanced printing technology is required, and that productivity is reduced due to complicated processes.

【0007】前記いずれの製造方法による回路基板につ
いても、パワーモジュールに実装する工程では、半導体
チップや電極が回路基板に接合されたり、回路基板がヒ
ートシンク銅板へ接合されたりするが、これらの工程で
は、エッチング後の金属回路間や金属回路の端部付近に
残留するセラミックス基板内の引張応力を、さらに増大
させるため、クラックが発生し易い問題があった。更
に、パワーモジュールを装置に装着する場合において
も、ヒートシンクにあらかじめ開けておいた穴に、固定
用のボルトを通し、装置にねじ止めするときの荷重で、
セラミックス基板に残留する大きな引張応力をさらに増
大させるため、この時点に於いてもクラックが発生する
と云う問題があった。
[0007] Regarding the circuit boards manufactured by any of the above manufacturing methods, in the step of mounting on the power module, the semiconductor chips and electrodes are joined to the circuit board, and the circuit board is joined to the heat sink copper plate. Further, since the tensile stress in the ceramic substrate remaining between the metal circuits after etching and in the vicinity of the end of the metal circuit is further increased, there is a problem that cracks are easily generated. Furthermore, even when the power module is mounted on the device, the fixing bolt is passed through the hole previously drilled in the heat sink, and the load when screwing the device is used.
In order to further increase the large tensile stress remaining on the ceramic substrate, there is a problem that cracks are generated even at this point.

【0008】以上の問題に対して、窒化アルミニウム焼
結体を用いた回路基板について、ヒートショックやヒー
トサイクルなどの熱衝撃、熱履歴によって生じる損傷に
対して十分な耐久性をもたせるために、銅回路と窒化ア
ルミニウム基板との間に介在させる接合層の厚みを例え
ば20μm以上に厚くする方法が提案されている(特開
平6−196828号公報)。しかしながら、接合層の
厚みを厚くすると不要なろう材の除去が困難となるなど
未だ解決すべき課題があった。
[0008] In order to solve the above problems, a circuit board using an aluminum nitride sintered body is made of copper in order to have sufficient durability against damage caused by heat shock and heat history such as heat shock and heat cycle. A method has been proposed in which the thickness of a bonding layer interposed between a circuit and an aluminum nitride substrate is increased to, for example, 20 μm or more (Japanese Patent Laid-Open No. 6-162828). However, when the thickness of the joining layer is increased, there is still a problem to be solved such that it becomes difficult to remove unnecessary brazing material.

【0009】本発明は、上記の事情に鑑みてなされたも
のであり、回路基板の放熱性、絶縁耐圧を損なうことな
く、クラック発生を低減させ、信頼性の高いモジュール
が容易に得ることのできる回路基板を提供すること、ま
た前記回路基板を生産性高く提供することを目的とす
る。
The present invention has been made in view of the above circumstances, and it is possible to easily obtain a highly reliable module by reducing the occurrence of cracks without impairing the heat dissipation and insulation withstand voltage of a circuit board. It is an object to provide a circuit board and to provide the circuit board with high productivity.

【0010】[0010]

【課題を解決するための手段】本発明は、本質的に反り
のないセラミックス基板を少なくとも一方向でたわませ
ながら金属回路又は回路用金属板と金属放熱板とを接合
してなり、しかも金属回路又は回路用金属板側が凹面に
反っていることを特徴とする回路基板であり、反り量
が、該反りのある方向の長さに対して1/4000以上
3/100以下であることを特徴とする前記の回路基板
である。
According to the present invention, a metal substrate or a metal plate for a circuit and a metal radiating plate are joined while bending a ceramic substrate having essentially no warp in at least one direction. A circuit board characterized in that a circuit or a metal plate side for a circuit is warped to a concave surface, wherein the amount of warpage is 1/4000 or more and 3/100 or less with respect to the length in the direction of warping. The circuit board described above.

【0011】更に、本発明は、セラミックス基板の熱膨
張係数が5×10-6-1以下であることを特徴とする回
路基板であり、好ましくは、セラミックス基板が窒化珪
素からなる回路基板であり、或いは、セラミックス基板
が窒化アルミニウムからなり、金属回路又は回路用金属
板と金属放熱板とを接合した後の反り量が、該反りのあ
る方向の長さに対して1/250以上3/100以下で
あることを特徴とする前記の回路基板である。
Further, the present invention relates to a circuit board characterized in that the coefficient of thermal expansion of the ceramic substrate is 5 × 10 −6 ° C.- 1 or less, and preferably, the ceramic substrate is made of silicon nitride. Yes, or the ceramic substrate is made of aluminum nitride, and the amount of warpage after joining a metal circuit or a metal plate for a circuit and a metal radiator plate is 1/250 or more to 3 / L of the length in the warped direction. The circuit board as described above, wherein the number is 100 or less.

【0012】また、本発明は、本質的に反りのないセラ
ミックス基板を、少なくとも一方向で該方向の長さの1
/4000以上3/100以下たわませながら、金属回
路又は回路用金属板と放熱用金属板とを接合することを
特徴とする回路基板の製造方法であり、好ましくは、前
記製造方法において、たわんでできるセラミックス基板
の凹面側に金属回路又は回路用金属板を、凸面側に放熱
用金属板を接合することを特徴とする回路基板の製造方
法である。また、本発明は、セラミックス基板に接合し
た回路用金属板より金属回路を形成することを特徴とす
る前記の回路基板の製造方法である。
Further, the present invention provides a ceramic substrate having essentially no warp in at least one direction having a length of one direction.
A method for manufacturing a circuit board, comprising joining a metal circuit or a metal plate for circuit and a metal plate for heat dissipation while bending the metal plate between / 4000 and 3/100 inclusive, preferably in the manufacturing method, A metal circuit or a metal plate for a circuit on the concave side of the ceramic substrate, and a metal plate for heat radiation on the convex side. Further, the present invention is the above-mentioned method for manufacturing a circuit board, wherein a metal circuit is formed from a circuit metal plate bonded to a ceramic substrate.

【0013】[0013]

【発明の実施の形態】以下、本発明について図をもっ
て、詳しく説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings.

【0014】図1は、本発明の回路基板とその製造方法
の説明図である。(a)は用いるセラミックス基板の断
面図、(b)は金属回路又は回路用金属板と放熱用金属
板とを接合する直前のたわませたセラミックス基板の断
面図、(c)は凹面側に金属回路があり、凸面側に放熱
用金属板がある反りを有する回路基板の断面図である。
FIG. 1 is an explanatory diagram of a circuit board of the present invention and a method of manufacturing the same. (A) is a cross-sectional view of a ceramic substrate to be used, (b) is a cross-sectional view of a bent ceramic substrate immediately before joining a metal circuit or a metal plate for a circuit and a metal plate for heat radiation, and (c) is a concave side. FIG. 4 is a cross-sectional view of a warped circuit board having a metal circuit and having a metal plate for heat dissipation on a convex surface side.

【0015】本発明においては、本質的に反りのないセ
ラミックス基板を少なくとも一方向でたわませながら2
枚の厚みや形状の異なる金属板を前記セラミックス基板
の両面に接合することで、所望の方向に反りのある回路
基板を得ることが本質的である。そして、このような反
りを有する回路基板を用いてモジュールを形成すると、
モジュールは一般的に平面的になるようにヒートシンク
を接合し、更に固定部品に固定して用いられるので、回
路基板の所望の一面に圧縮応力を発生させておけば、モ
ジュールへの組立て時やその実使用下でのクラックの発
生、成長を低減することができ、その結果信頼性の高い
モジュールを得ることができるという知見に基づいてな
されたものである。
In the present invention, an essentially warp-free ceramic substrate is bent while being bent in at least one direction.
It is essential to obtain a circuit board that is warped in a desired direction by joining metal plates having different thicknesses and shapes to both surfaces of the ceramic substrate. When a module is formed using a circuit board having such a warp,
Since a module is generally used by bonding a heat sink so as to be planar and fixing it to a fixed component, if a compressive stress is generated on a desired surface of the circuit board, it is possible to assemble the module at the time of assembling or actualizing the module. This is based on the finding that the generation and growth of cracks during use can be reduced, and as a result, a highly reliable module can be obtained.

【0016】本発明の回路基板は、上述したとおりに、
回路基板を平坦な状況で用いるときに、回路基板の所望
の面に圧縮応力が残留するように作られたものである。
微小クラックの発生、成長を抑制する目的から、金属回
路又は回路用金属板のある面に圧縮応力が残留するよう
に、金属回路又は回路用金属板が凹面に配置されている
ように、反っていることが本質的である。従って、凸面
に放熱用金属板が配置された構造を有する。
As described above, the circuit board of the present invention comprises:
When the circuit board is used in a flat state, it is formed so that a compressive stress remains on a desired surface of the circuit board.
For the purpose of suppressing generation and growth of micro cracks, warping so that the metal circuit or circuit metal plate is arranged on a concave surface so that compressive stress remains on a certain surface of the metal circuit or circuit metal plate. Is essential. Therefore, it has a structure in which the metal plate for heat radiation is arranged on the convex surface.

【0017】反り量に関しては、モジュールへの組立時
や該モジュールの使用条件下で受ける熱変動、衝撃の大
きさ、或いはセラミックス基板、金属回路、放熱用金属
板、更に接合材等の大きさ、形状、材質特性等に応じ
て、適宜選択すれば良いが、本発明者らの検討によれ
ば、反りのある方向の長さに対して反り量が1/400
0以上3/100以下であることが好ましい。1/40
00未満の場合には本発明の効果が十分に得られない場
合が多く、3/100を越える場合にはモジュール作成
時にセラミックス基板が破壊することがある。尚、金属
回路のパターン抜き部が連続する場合には、それと直角
方向に回路基板を反らせるとき、本発明の効果が大いに
発揮される。
With respect to the amount of warpage, the magnitude of thermal fluctuations and impacts received during assembly into a module or under the use conditions of the module, or the size of a ceramic substrate, a metal circuit, a metal plate for heat dissipation, and a bonding material, It may be appropriately selected according to the shape, material characteristics, etc. According to the study of the present inventors, the warpage amount is 1/400 of the length in the warped direction.
It is preferably 0 or more and 3/100 or less. 1/40
If it is less than 00, the effect of the present invention cannot be sufficiently obtained in many cases, and if it exceeds 3/100, the ceramic substrate may be broken at the time of module production. In the case where the pattern cut portion of the metal circuit is continuous, when the circuit board is warped in a direction perpendicular thereto, the effect of the present invention is greatly exerted.

【0018】本発明に用いるセラミックス基板として
は、後述する回路用金属板や放熱用金属板の熱膨張率よ
りも小さな熱膨張率を有するもので、回路基板として必
要な電気絶縁性、耐熱性を有するものであればいずれで
も用いることができる。このようなセラミックス基板と
して、アルミナ、ムライト、窒化珪素、窒化アルミニウ
ム、酸化ベリリウムなどが挙げられる。これらのうち、
熱膨張率が5×10-6-1以下のセラミックス回路基板
を選択すると、前記金属板との熱膨張率差が大きく、回
路基板の反りが僅かであっても大きな圧縮応力が期待で
き良好であり、このようなセラミックス基板として、窒
化珪素、窒化アルミニウム等の非酸化セラミックス基板
が挙げられる。
The ceramic substrate used in the present invention has a coefficient of thermal expansion smaller than the coefficient of thermal expansion of a metal plate for a circuit or a metal plate for heat radiation, which will be described later. Any of them can be used. Examples of such a ceramic substrate include alumina, mullite, silicon nitride, aluminum nitride, and beryllium oxide. Of these,
When a ceramic circuit board having a coefficient of thermal expansion of 5 × 10 −6 ° C. -1 or less is selected, a large difference in coefficient of thermal expansion from the metal plate is large, and a large compressive stress can be expected even if the circuit board is slightly warped. As such a ceramic substrate, a non-oxidized ceramic substrate such as silicon nitride and aluminum nitride can be used.

【0019】また、セラミックス基板としては、更に、
得られる回路基板の熱放散性を良好とするために、熱伝
導率が60W/mK以上のものが適している。更に、セ
ラミックス基板の曲げ強さについては、回路基板の強さ
に影響することから、350MPa以上のものが好まし
い。
The ceramic substrate further includes:
In order to improve the heat dissipation of the obtained circuit board, those having a thermal conductivity of 60 W / mK or more are suitable. Further, the bending strength of the ceramic substrate is preferably 350 MPa or more because it affects the strength of the circuit board.

【0020】上記した、好ましい熱膨張率、熱伝導率、
曲げ強さの範囲に該当するセラミックス基板としては、
窒化珪素、窒化アルミニウムが挙げられる。特に、窒化
アルミニウムの場合、その理由は不明であるが、反り量
が反りのある方向の長さに対して1/250以上1/3
00以下のときに熱伝導率が高く、しかも信頼性の高い
モジュールを得ることができ、一層好ましい。
As described above, the preferred coefficient of thermal expansion, thermal conductivity,
Ceramic substrates that fall into the range of bending strength include:
Silicon nitride and aluminum nitride are given. In particular, in the case of aluminum nitride, the reason is unknown, but the amount of warpage is 1/250 or more and 1/3 of the length in the warped direction.
When it is less than 00, a module having high thermal conductivity and high reliability can be obtained, which is more preferable.

【0021】上記セラミックス基板の厚みについては、
要求される回路基板の放熱特性、機械的性質、電気特性
等により異なるが、通常0.3mm以上1.5mm以下
が採用される。本発明においても、これら通常の厚さの
ものが用いられるが、これに限定されるものではない。
Regarding the thickness of the ceramic substrate,
Although it depends on the required heat radiation characteristics, mechanical properties, electrical characteristics, etc. of the circuit board, it is usually 0.3 mm or more and 1.5 mm or less. In the present invention, those having a normal thickness are used, but the present invention is not limited thereto.

【0022】本発明に用いられる金属回路、回路用金属
板及び放熱用金属板については、銅、ニッケル、アルミ
ニウム、モリブデン、タングステン等の金属や前記金属
を主成分とする合金、或いは前記金属或いは合金の接合
したもの等が用いられ、その厚みは0.1〜2.0mm
が一般的である。尚、本発明においては金属回路と放熱
用金属板とが同一である必要はないので、材質、厚さ、
形状等の点で異なっていても構わない。
The metal circuit, the metal plate for the circuit and the metal plate for heat radiation used in the present invention include metals such as copper, nickel, aluminum, molybdenum and tungsten, alloys containing the above metals as main components, or metals or alloys containing the above metals. Are used, and the thickness thereof is 0.1 to 2.0 mm.
Is common. In the present invention, since the metal circuit and the heat-dissipating metal plate do not need to be the same, the material, thickness,
They may differ in shape and the like.

【0023】前記金属回路、回路用金属板及び放熱用金
属板は、セラミックス基板と接合層を介して接合されて
いるが、本発明の場合、該接合層はろう材ペーストを用
いて形成されたものであっても、セラミックスと金属と
の共晶層により形成されたものであっても構わない。前
記ろう材ペーストとしては、例えば金属回路又は放熱用
金属板の材質が銅である場合には銅若しくは銅と銀を含
むろう材であり、更に窒化物セラミックス基板の場合に
は、チタンなどの活性金属を含んだ前記ろう材が好まし
く用いられる。一方、共晶層を形成せしめる場合には、
例えばセラミックス基板にアルミナを用い金属板に銅を
用いるときには銅の酸化物が共晶層として選択される。
The metal circuit, the circuit metal plate and the heat dissipation metal plate are joined to the ceramic substrate via a joining layer. In the case of the present invention, the joining layer is formed by using a brazing material paste. It may be formed of a eutectic layer of ceramic and metal. The brazing material paste is, for example, a brazing material containing copper or copper and silver when the material of the metal circuit or the heat-dissipating metal plate is copper, and an active material such as titanium when the material is a nitride ceramic substrate. The brazing material containing a metal is preferably used. On the other hand, when forming a eutectic layer,
For example, when alumina is used for the ceramic substrate and copper is used for the metal plate, a copper oxide is selected as the eutectic layer.

【0024】本発明の回路基板の製法について、以下フ
ルエッチ法での製法を例示し、詳細に説明するが、本発
明はこれに限定されるものではない。
The method of manufacturing the circuit board of the present invention will be described in detail by way of example of a full etching method, but the present invention is not limited thereto.

【0025】まず、反り量が該反りのある方向の長さに
対して1/4000未満の、本質的に反りのないセラミ
ックス基板の両面に、例えば銅と銀とを含むろう材ペー
ストを塗布する。次に、本発明の請求項に係る反りと同
じ曲面を有する凹凸一対の治具を用意し、凹面を上面に
有する治具の上に前記ろう材ペーストを覆うに充分な広
さの放熱用金属板を置き、その上に前記セラミックス基
板を置く。更に、回路用金属板を前記セラミックス基板
上に置き、その上に凸面を下面に有する治具を置く。更
に、セラミックス基板をたわませる荷重を負荷し、荷重
を負荷した状態で熱処理を行い金属板とセラミックス基
板とを接合する。
First, a brazing material paste containing, for example, copper and silver is applied to both surfaces of an essentially non-warped ceramic substrate whose warpage is less than 1/4000 of the length in the warped direction. . Next, a pair of uneven jigs having the same curved surface as the warp according to the claims of the present invention is prepared, and the heat dissipating metal having a width sufficient to cover the brazing material paste on the jig having the concave surface on the upper surface is provided. A plate is placed, and the ceramic substrate is placed thereon. Further, a circuit metal plate is placed on the ceramic substrate, and a jig having a convex surface on the lower surface is placed thereon. Further, a load for bending the ceramic substrate is applied, and heat treatment is performed while the load is applied to join the metal plate and the ceramic substrate.

【0026】セラミックス基板のたわませかたについて
は、目標とする反りを有する回路基板の反り方向と同一
の方向の長さに対して1/4000以上3/100以下
たわませることが好ましい。然るに、回路基板をたわま
せる方向とその量は、回路基板の反りの方向とその量に
概ね一致するからである。
Regarding how to warp the ceramic substrate, it is preferable that the ceramic substrate bend from 1/4000 to 3/100 in length in the same direction as the warping direction of the circuit board having the target warpage. This is because the direction in which the circuit board is deflected and the amount thereof substantially match the direction in which the circuit board is warped and the amount thereof.

【0027】前記荷重をかける方法については、上記操
作において、金属とセラミックス基板との接合とセラミ
ックス基板の変形とが行われれば良いので、治具を加熱
と荷重に耐え得る材質とする方法、或いはホットプレス
のように油圧或いは機械的な圧力をかける方法等のいず
れの方法でも良い。しかし、前者の方法に於いて、治具
が高密度で重しを兼ねることができるタングステンやモ
リブデン等の高融点金属で作成する方法が、荷重負荷に
特別の装置を必要としないので安価に回路基板を製造で
きることから好ましい方法である。
The method of applying the load may be such that the joining of the metal and the ceramic substrate and the deformation of the ceramic substrate may be performed in the above-mentioned operation. Any method such as a method of applying hydraulic pressure or mechanical pressure such as hot pressing may be used. However, in the former method, the method in which the jig is made of a high-melting-point metal such as tungsten or molybdenum, which can serve as a high-density high-density metal, does not require a special device for load application, so the circuit is inexpensive. This is a preferable method because a substrate can be manufactured.

【0028】上記で得た両面に金属板が接合したセラミ
ックス基板(以下接合体という)について、金属板上に
エッチングレジストを用いて回路パターンを印刷し、レ
ジスト回路パターンを形成する。
With respect to the ceramic substrate (hereinafter referred to as a “joined body”) having a metal plate bonded to both surfaces obtained above, a circuit pattern is printed on the metal plate using an etching resist to form a resist circuit pattern.

【0029】次いで、エッチング処理して、パターン外
の不要な金属やろう材等を除去した後、エッチングレジ
ストを除去して、金属回路を有する回路基板とする。更
に、金属回路の酸化と腐食を防止する等の目的で、必要
に応じてニッケルメッキ等を行い金属回路上に保護膜を
形成する。
Next, after performing an etching process to remove unnecessary metal and brazing material outside the pattern, the etching resist is removed to obtain a circuit board having a metal circuit. Further, for the purpose of preventing oxidation and corrosion of the metal circuit, nickel plating or the like is performed as necessary to form a protective film on the metal circuit.

【0030】以下に実施例に基づいて、本発明を更に詳
細に説明する。
Now, the present invention will be described in further detail with reference to Examples.

【0031】[0031]

【実施例】【Example】

〔実施例1〜6〕サイズ40mm×40mm、厚み0.
635mmの窒化アルミニウム焼結体の両面にチタンを
活性金属として含む銀−銅系のろう材ペーストをスクリ
ーン印刷法により塗布し乾燥した後、厚み0.3mmの
金属回路用銅板と厚み0.15mmの放熱用銅板を接触
配置するように載せる。これを凹面を上面にもつように
加工した窒化珪素製治具の上面に金属回路用銅板が上に
なるように置いて、その上から凹面と同形状に作製した
凸面を下面にもった窒化珪素製治具を置き、更に、10
0×100×50mmのタングステンを載せて窒化アル
ミニウム基板をたわませる。これらを真空中830℃で
30分間熱処理を行い窒化アルミニウム基板と銅板の接
合体を得た。
[Examples 1 to 6] Size: 40 mm x 40 mm, thickness: 0.1 mm
A silver-copper-based brazing material paste containing titanium as an active metal is applied on both sides of a 635-mm aluminum nitride sintered body by a screen printing method and dried, and then a copper plate for a metal circuit having a thickness of 0.3 mm and a copper plate having a thickness of 0.15 mm are formed. The heat dissipating copper plate is placed so as to be in contact with it. A silicon nitride jig was machined so that it had a concave surface on the upper surface, and a copper plate for metal circuits was placed on the upper surface of the jig. Place the jig, and 10
The aluminum nitride substrate is bent by placing tungsten of 0 × 100 × 50 mm. These were heat-treated in a vacuum at 830 ° C. for 30 minutes to obtain a joined body of an aluminum nitride substrate and a copper plate.

【0032】次に、前記接合体の銅板上に紫外線硬化型
エッチングレジストをスクリーン印刷法により回路パタ
ーンに印刷し硬化させた後、塩化第2鉄溶液でパターン
外の不要な銅を除去した。次いで、フッ化水素アンモニ
ウムと過酸化水素を含む水溶液に入れ、銅回路パターン
間の不要ろう材を除去した後、レジストを除去した。更
に、無電解ニッケルメッキにより銅回路に選択的にニッ
ケル保護膜を形成させた。
Next, an ultraviolet-curable etching resist was printed on the circuit board by a screen printing method and cured on the copper plate of the joined body, and unnecessary copper outside the pattern was removed with a ferric chloride solution. Next, the substrate was placed in an aqueous solution containing ammonium hydrogen fluoride and hydrogen peroxide to remove unnecessary brazing material between copper circuit patterns, and then the resist was removed. Further, a nickel protective film was selectively formed on the copper circuit by electroless nickel plating.

【0033】〔実施例7〕実施例7については、セラミ
ックス基板として窒化珪素焼結体を用いた以外は実施例
1〜6に示す方法で試料を得た。
Example 7 In Example 7, a sample was obtained by the method shown in Examples 1 to 6, except that a silicon nitride sintered body was used as a ceramic substrate.

【0034】〔実施例8〕実施例8については、セラミ
ックス基板としてアルミナ焼結体を用いた以外は実施例
1〜6に示す方法で試料を得た。
Example 8 In Example 8, samples were obtained by the methods shown in Examples 1 to 6, except that an alumina sintered body was used as a ceramic substrate.

【0035】〔比較例1、2〕比較例1及び2について
は、金属回路用銅板が下になるように置いた以外は、実
施例1〜6と同様な方法で試料を得た。
[Comparative Examples 1 and 2] With respect to Comparative Examples 1 and 2, samples were obtained in the same manner as in Examples 1 to 6, except that the metal circuit copper plate was placed downward.

【0036】〔比較例3〕比較例3については、上記の
窒化珪素製治具に代えて、窒化珪素焼結体の反りのない
板を用いた以外は実施例1〜6と同様な方法で試料を得
た。
Comparative Example 3 Comparative Example 3 was performed in the same manner as in Examples 1 to 6, except that a silicon nitride sintered body having no warped plate was used instead of the above silicon nitride jig. A sample was obtained.

【0037】これらの回路基板についてヒートサイクル
試験を実施した。ヒートサイクル試験は、−40℃で3
0分間保持し、125℃で30分間保持する加熱冷却操
作を1サイクルとし、JIS C 0025温度変化試
験方法に準じて実施した。30回、50回、100回の
ヒートサイクル試験後にクラック発生の有無を評価し
た。
A heat cycle test was performed on these circuit boards. The heat cycle test was performed at -40 ° C for 3 hours.
The heating / cooling operation in which the temperature was held for 0 minutes and the temperature was held at 125 ° C. for 30 minutes was defined as one cycle, and the test was performed in accordance with JIS C 0025 temperature change test method. After 30, 50, and 100 heat cycle tests, the presence or absence of cracks was evaluated.

【0038】クラックの発生の有無は、以下の方法によ
り行った。即ち、試験後、銅回路板及びろう材を前述の
方法にて溶解除去し、銅回路板の下側の銅回路板端部縁
に沿ってセラミックス基板に発生したクラック(回路間
には現われていないので銅回路板を除去しないと確認で
きないクラック)を実体顕微鏡で評価した。回路板端部
縁の長さを全て合計した長さ(全長さ)に対して回路板
端部縁でクラックの発生している縁の長さを割合で表
し、これをクラック発生率%として算出し、その結果を
表1に示した。
The presence or absence of cracks was determined by the following method. That is, after the test, the copper circuit board and the brazing material are dissolved and removed by the above-described method, and cracks generated on the ceramic substrate along the edge of the copper circuit board below the copper circuit board (appearing between the circuits). (A crack which cannot be confirmed without removing the copper circuit board because there is no copper circuit board) was evaluated with a stereoscopic microscope. The length of the edge where cracks occur at the edge of the circuit board is expressed as a percentage of the total length of the edges of the circuit board (total length), and this is calculated as the crack occurrence rate%. The results are shown in Table 1.

【0039】[0039]

【表1】 [Table 1]

【0040】[0040]

【発明の効果】実施例、比較例から明らかなように、比
較例に係る回路基板は、ヒートサイクル試験30回でヒ
ートシンク接合でクラックが発生し、ヒートサイクルの
繰り返し回数の増加に伴い、基板に発生するクラックが
多くなったため、充分な信頼性が得られなかったり、た
わみ量が大きくヒートサイクル実施前にクラック発生が
多数認められているのに対して、本発明に係る回路基板
はヒートサイクル試験30回後のヒートシンク接合でも
セラミックス基板にクラックは発生しておらず、高い信
頼性を有し、実用的である。
As is clear from the examples and the comparative examples, the circuit board according to the comparative example has cracks caused by heat sink bonding in the heat cycle test 30 times, and as the number of repetitions of the heat cycle increases, Since the number of cracks generated increased, sufficient reliability could not be obtained, and the amount of deflection was large and many cracks were observed before the heat cycle was performed, whereas the circuit board according to the present invention was subjected to a heat cycle test. No cracks are generated in the ceramic substrate even after the heat sink bonding after 30 times, and the ceramic substrate has high reliability and is practical.

【0041】特に、室温の熱膨張係数が5×10-6-1
以下であるセラミックス基板を用いた場合に本発明の効
果は顕著であり、ヒートサイクル試験100回後もクラ
ックが発生しておらず、きわめて信頼性が高いことがわ
かる。
In particular, the coefficient of thermal expansion at room temperature is 5 × 10 -6 ° C -1
When the following ceramic substrate is used, the effect of the present invention is remarkable, and no crack is generated even after 100 heat cycle tests, indicating that the reliability is extremely high.

【0042】即ち、本発明に基づけば、高い信頼性、放
熱性を有する回路基板が提供され、しかも本発明の方法
により前記回路基板を安定して提供することができ、産
業上有用である。
That is, according to the present invention, a circuit board having high reliability and heat dissipation is provided, and the circuit board can be stably provided by the method of the present invention, which is industrially useful.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明に係る回路基板とその製造方法につい
ての説明図。
FIG. 1 is an explanatory diagram of a circuit board according to the present invention and a method of manufacturing the same.

【符号の説明】 1 セラミックス基板 2 回路用金属板 3 放熱用金属板 4 接合層 w セラミックス基板のたわませ量[Description of Signs] 1 Ceramic substrate 2 Metal plate for circuit 3 Metal plate for heat radiation 4 Bonding layer w Deflection amount of ceramic substrate

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】本質的に反りのないセラミックス基板を少
なくとも一方向でたわませながら金属回路又は回路用金
属板と金属放熱板とを接合してなり、しかも金属回路又
は回路用金属板側が凹面に反っていることを特徴とする
回路基板。
A metal circuit or a metal plate for a circuit and a metal heat radiating plate are joined while bending an essentially warped ceramic substrate in at least one direction, and the metal circuit or the metal plate for a circuit has a concave surface. A circuit board characterized by being warped.
【請求項2】反り量が、該反りのある方向の長さに対し
て1/4000以上3/100以下であることを特徴と
する請求項1記載の回路基板。
2. The circuit board according to claim 1, wherein the amount of warp is not less than 1/4000 and not more than 3/100 with respect to the length in the direction in which the warp is present.
【請求項3】 セラミックス基板の熱膨張係数が5×1
-6-1以下であることを特徴とする請求項2記載の回
路基板。
3. The ceramic substrate has a coefficient of thermal expansion of 5 × 1.
The circuit board according to claim 2, wherein the temperature is 0 -6 ° C -1 or less.
【請求項4】 セラミックス基板が窒化珪素からなるこ
とを特徴とする請求項3記載の回路基板。
4. The circuit board according to claim 3, wherein the ceramic substrate is made of silicon nitride.
【請求項5】 セラミックス基板が窒化アルミニウムか
らなり、金属回路又は回路用金属板と金属放熱板とを接
合した後の反り量が、該反りのある方向の長さに対して
1/250以上3/100以下であることを特徴とする
請求項3記載の回路基板。
5. The ceramic substrate is made of aluminum nitride, and the amount of warpage after joining a metal circuit or a metal plate for a circuit and a metal radiator plate is 1/250 or more with respect to the length in the warped direction. 4. The circuit board according to claim 3, wherein the ratio is not more than / 100.
【請求項6】本質的に反りのないセラミックス基板を、
少なくとも一方向で該方向の長さの1/4000以上3
/100以下たわませながら、金属回路又は回路用金属
板と放熱用金属板とを接合することを特徴とする回路基
板の製造方法。
6. A ceramic substrate having essentially no warpage,
1/4000 or more of the length in at least one direction 3
A method for manufacturing a circuit board, comprising joining a metal circuit or a metal plate for a circuit and a metal plate for heat radiation while bending the metal plate to be less than / 100.
【請求項7】請求項6記載の回路基板の製造方法におい
て、たわんでできるセラミックス基板の凹面側に金属回
路又は回路用金属板を、凸面側に放熱用金属板を接合す
ることを特徴とする回路基板の製造方法。
7. A method of manufacturing a circuit board according to claim 6, wherein a metal circuit or a metal plate for a circuit is bonded to a concave side of the bent ceramic substrate, and a metal plate for heat radiation is bonded to the convex side. A method for manufacturing a circuit board.
【請求項8】セラミックス基板に接合した回路用金属板
より金属回路を形成することを特徴とする請求項6又は
請求項7記載の回路基板の製造方法。
8. The method for manufacturing a circuit board according to claim 6, wherein a metal circuit is formed from a circuit metal plate bonded to a ceramic substrate.
JP5047697A 1997-03-05 1997-03-05 Circuit board and manufacture thereof Pending JPH10247763A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5047697A JPH10247763A (en) 1997-03-05 1997-03-05 Circuit board and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH10247763A true JPH10247763A (en) 1998-09-14

Family

ID=12859962

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH10247763A (en)

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