JPH03252386A - Device for producing single crystal - Google Patents
Device for producing single crystalInfo
- Publication number
- JPH03252386A JPH03252386A JP2051326A JP5132690A JPH03252386A JP H03252386 A JPH03252386 A JP H03252386A JP 2051326 A JP2051326 A JP 2051326A JP 5132690 A JP5132690 A JP 5132690A JP H03252386 A JPH03252386 A JP H03252386A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- crucible
- single crystal
- silicon
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 239000002994 raw material Substances 0.000 claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 238000003860 storage Methods 0.000 claims abstract description 38
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000005192 partition Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005303 weighing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、塊状原料を供給しながら単結晶を育成する
シリコン単結晶の製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a silicon single crystal manufacturing apparatus for growing a single crystal while supplying bulk raw material.
［従来の技術］
原料を坩堝内に連続的に供給しながら、単結晶の連続育
成を行うシリコン単結晶の製造方法（以下、ｃｃ−ｃｚ
法と略す）の開発が盛んに行われている。−例として、
特公昭６１−１７５３７がある。しかし、いずれもシリ
コン原料の供給量を高精度に制御する必要があること、
および貯蔵容器からの原料の切り出しが容易であること
から、原料シリコンの形状は粒状のものに限定されてい
る。この粒状原料の形状は球形で、直径は０．２乃至５
ミリメートルである。[Prior art] A method for manufacturing a silicon single crystal (hereinafter referred to as cc-cz) in which a single crystal is continuously grown while continuously supplying raw materials into a crucible.
(abbreviated as law) is being actively developed. -For example,
There is a special public service No. 61-17537. However, in both cases, it is necessary to control the supply amount of silicon raw materials with high precision;
The shape of the raw material silicon is limited to granular ones because it is easy to cut out the raw material from the storage container. The shape of this granular raw material is spherical, and the diameter is 0.2 to 5.
It is in millimeters.
［発明が解決しようとする課題］
しかしながら、上記の粒状シリコン原料は、広くは使わ
れていない、ｃｃ−ｃｚ法が広く普及するには、−船釣
に使われている原料を使用できるような結晶育成技術で
なければならない、汎用的に使用されている原料は、氷
あるいは硝子を破砕したような不定形な塊である。また
、その寸法も１０乃至５０ミリメートルと大きく、かつ
、ばらつきがある、このような塊状原料は、貯蔵容器か
らの切り出しおよび坩堝内への供給量制御がきわめて困
難である。従って、塊状原料を用いたｃｃ−ｃｚ法はま
だ実用化されていない。[Problems to be Solved by the Invention] However, the above-mentioned granular silicon raw materials are not widely used, and for the CC-cz method to become widespread, it is necessary to - be able to use raw materials used for boat fishing; The commonly used raw material required for crystal growth technology is an amorphous mass such as crushed ice or glass. Furthermore, it is extremely difficult to cut out such bulk raw material from the storage container and control the amount supplied into the crucible, as the size thereof is large and varies from 10 to 50 mm. Therefore, the cc-cz method using bulk raw materials has not yet been put to practical use.
上記の塊状原料供給装置が満たさなければならない要件
は、下記の通りである。The requirements that the above bulk raw material supply device must meet are as follows.
■多量の原料（５０〜２００ ｋｇｆ＞を貯蔵する貯蔵
部より、安定して原料を切り出せること。- Raw materials can be stably cut out from a storage section that stores a large amount of raw materials (50 to 200 kgf>).
■微量供給（３０〜１００ｇ／ｗｉｎ）ができ、かつ、
供給量が高精度（目標値±１０％）に制御できること。■Able to supply small amounts (30-100g/win), and
The supply amount can be controlled with high precision (target value ±10%).
■原料の汚染のないこと、このためには、シリコン、石
英またはテフロンで装置を製作できる程度に、簡単な構
造であることが望ましい。- No contamination of raw materials.To this end, it is desirable that the structure be simple enough that the device can be manufactured from silicon, quartz, or Teflon.
本願の分野以外の分野では、きわめて多種の塊状物体の
搬送方法が実用化されているが、これらの中には上記の
要件を満たすようなものはない。Although a wide variety of methods for conveying bulk objects have been put into practice in fields other than the field of the present application, none of these methods satisfies the above requirements.
本発明はかかる事情に鑑みてなされたもので、本発明の
目的は、塊状原料を連続的に、かつ、供給量を高精度に
制御して、供給できる原料供給装置を備えた、単結晶製
造装置を提供することである。The present invention has been made in view of the above circumstances, and an object of the present invention is to manufacture a single crystal, which is equipped with a raw material supply device capable of supplying bulk raw materials continuously and controlling the supply amount with high precision. The purpose is to provide equipment.
［課題を解決するための手段］
本発明による単結晶製造装！は、結晶原料の融液を収容
し、鉛直軸の回りに回転する坩堝と、該坩堝の周囲に設
けられ、該坩堝を加熱する電気抵抗式の加熱手段と、該
融液がら単結晶を引き上げる引き上げ装置と、該融液の
貫通孔を有し、該坩堝内に設けられ外側の原料溶解部と
内側の結晶育成部に区分する仕切りと、該原料溶解部に
結晶原料を供給する原料供給装置とを有し、塊状原料を
供給しながら単結晶を育成するシリコン単結晶の製造装
置において、
該塊状原料を保持し、中心軸がほぼ水平で、該中心軸の
回りに回転可能に設けられた貯蔵筒と、塊状原料が一方
の端部より他方の端部へ通過できる内径を有し、かつ出
口となる端部が入口となる端部より高さが低くなるよう
に傾斜され、中心軸の回りに回転可能に、貯蔵筒の下流
側に設けられた計量筒と、該計量筒を通過する塊状原料
の重量を計測するなめ該計量筒に取り付けた荷重計とを
有する原料供給装置を設けたことを特徴とする。[Means for solving the problem] Single crystal manufacturing equipment according to the present invention! A crucible containing a melt of a crystal raw material and rotating around a vertical axis, an electric resistance heating means provided around the crucible for heating the crucible, and pulling a single crystal from the melt. a pulling device, a partition having a through hole for the melt and provided in the crucible to divide it into an outer raw material melting section and an inner crystal growth section, and a raw material supplying device for supplying the crystal raw material to the raw material melting section. In a silicon single crystal production apparatus that grows a single crystal while supplying a lumpy raw material, the silicon single crystal manufacturing apparatus has a silicon single crystal manufacturing apparatus that holds the lumpy raw material, has a substantially horizontal central axis, and is rotatable around the central axis. The storage cylinder has an inner diameter that allows the bulk raw material to pass from one end to the other, and is inclined so that the end serving as the outlet is lower than the end serving as the inlet, and the central axis is A raw material supply device is provided, which is rotatable around the measuring cylinder and has a measuring cylinder provided on the downstream side of the storage cylinder, and a load meter attached to the measuring cylinder for measuring the weight of the lumped raw material passing through the measuring cylinder. It is characterized by
［作用コ
中心軸がほぼ水平な貯蔵筒内に保持された塊状原料は、
該貯蔵筒の中心軸回りの回転運動によって、該貯蔵筒の
一方の開口した端部より排出される。この切り出し方法
は、原料がきわめて異形で、大きく、かつ、寸法のばら
つきが大きいにもかかわらず、原料を無理なく切り出せ
る。さらに、構造も簡単である。切り出し量の調節は、
貯蔵筒の回転数を調節することにより行われる。または
、貯蔵筒の中心軸の傾斜角度を調節する方法でもよい、
あるいは、それらを組み合わせた方法でもよい、貯蔵筒
より切り出された原料は計量筒内に送り込まれる。[The bulk raw material is held in a storage cylinder whose central axis is approximately horizontal.
Rotational movement about the central axis of the storage cylinder causes the storage cylinder to be discharged from one open end. This cutting method allows the raw material to be cut out without difficulty even though the raw material is extremely irregularly shaped, large, and has large variations in size. Furthermore, the structure is simple. To adjust the cutting amount,
This is done by adjusting the rotation speed of the storage cylinder. Alternatively, a method may be used in which the inclination angle of the central axis of the storage cylinder is adjusted.
Alternatively, a combination of these methods may be used.The raw material cut out from the storage cylinder is fed into the measuring cylinder.
該計量筒は、塊状原料が一方の端部より他方の端部へ通
過できる内径を有している。さらに、前記貯蔵筒から排
出された塊状原料の入口となる端部が他方の出口となる
端部より高さが高くなるように傾斜して設けられている
。従って、前記貯蔵筒から排出された塊状原料は、前記
計量筒の中心軸回りの回転運動によって、計量筒内を滑
りながら入口側端部より出口側端部に向がって移動する
。移動にともない、原料は一列に配列する。そして、最
終的には出口側端部より一個づつ排出される。排出量の
調節は、計量筒の回転数を調節することにより行われる
。あるいは、計量筒の中心軸の傾斜角度を調節する方法
、または、それらを組み合わせた方法でもよい。The metering tube has an inner diameter that allows bulk material to pass from one end to the other. Further, the storage cylinder is provided so as to be inclined so that the end that serves as an inlet for the raw material discharged from the storage cylinder is higher than the other end that serves as an outlet. Therefore, the bulk raw material discharged from the storage cylinder moves from the inlet end to the outlet end while sliding inside the measuring cylinder due to rotational movement around the central axis of the measuring cylinder. As they move, the raw materials are arranged in a line. Finally, they are discharged one by one from the outlet side end. The discharge amount is adjusted by adjusting the rotation speed of the measuring tube. Alternatively, a method of adjusting the inclination angle of the central axis of the measuring cylinder, or a method of combining these methods may be used.
前記計量筒には荷重計が取り付けられており、計量筒よ
り排出された塊状原料の重量が計量される。計量方法と
しては、前記荷重計にがける前記計量筒荷重のかけかた
によって、以下の２通りが考えられる。A load meter is attached to the measuring cylinder, and the weight of the lumpy raw material discharged from the measuring cylinder is measured. As a measuring method, the following two methods can be considered depending on how the load of the measuring tube is applied to the load cell.
■前記計量筒の原料入口に近いところを軸支し、出口に
い近ところで荷重計に前記貯Ｍ、簡の荷重をかける方法
、■前記貯蔵筒の全荷重を荷重計にかける方法、が考え
られる。前記■、■の方法に対応した荷重計の作用は次
の通りである。■ A method of pivoting the measuring cylinder near the raw material inlet and applying the storage M and L loads to the load cell near the outlet; ■ A method of applying the entire load of the storage cylinder to the load cell. It will be done. The function of the load cell corresponding to the methods (1) and (2) above is as follows.
■１個の塊状原料が排出された瞬間、排出端近傍に配置
されている荷重計の指示が急激に低下する０個々の原料
塊が排出されるたびに、荷重計の指示の急激な低下がお
こる。この指示の低下量の所定時間内の累計が排出量に
相当する。■The moment a single lump of raw material is discharged, the reading on the load cell placed near the discharge end drops rapidly.0 Each time a lump of raw material is discharged, the reading on the load cell drops rapidly. It happens. The cumulative total of the amount of decrease in this instruction within a predetermined period of time corresponds to the amount of discharge.
■原料塊を計量筒に間欠的に装入する０個々の原料塊が
排出されるたびに、計量筒全体を支持している荷重計の
指示が低下する。原料塊の装入が停止している間の荷重
計の指示の低下量の所定時間内の累計が排出量に相当す
る。■Intermittently charging raw material lumps into the measuring cylinder 0 Each time an individual raw material lump is discharged, the reading on the load cell that supports the entire measuring cylinder decreases. The cumulative total of the amount of decrease in the load cell indication during a predetermined period of time while charging of the raw material block is stopped corresponds to the discharge amount.
シリコン塊状原料の坩堝内への供給量の調節は、前記荷
重計の計測重量に基づき計量筒の回転速度または中心軸
の傾斜角度を制御することにより行われる。The amount of silicon lump raw material supplied into the crucible is adjusted by controlling the rotational speed of the measuring tube or the inclination angle of the central axis based on the weight measured by the load cell.
この計量方法は、原料がきわめて異形で、がっ、寸法の
ばらつきも大きいにもかがゎらず、原料を無理なく移送
でき、従って、供給量を高精度に計測、制御できる。さ
らに、構造も簡単である。This measuring method allows raw materials to be transferred without difficulty even though the raw materials are extremely irregularly shaped and have large variations in size, and therefore the supply amount can be measured and controlled with high precision. Furthermore, the structure is simple.
以上のような原料供給装置は構造が簡単であるので、不
純物の混入を低減させるため、シリコン原料と接触する
部材をテフロン、石英またはシリコンで製作することが
できる。Since the raw material supply device as described above has a simple structure, the members that come into contact with the silicon raw material can be made of Teflon, quartz, or silicon in order to reduce the contamination of impurities.
口実施例］
本発明の実施例を添付の図面を参照しながら詳細に説明
する。第１図は本実施例の単結晶製造装置の縦断面図で
ある。Embodiments] Embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a longitudinal sectional view of the single crystal manufacturing apparatus of this embodiment.
１は中心部に坩堝２が設けられたチャンバで、１ａはそ
の蓋である。チャンバ１の中に、黒鉛坩堝３を回転およ
び上下動可能に支持する支持軸４、加熱手段としてヒー
タ８とその周りに設けられた断熱材９が配！されている
。前記坩堝２は石英製で、黒鉛坩堝３内にセットされて
いる。６は坩堝２内のシリコン融液５を外側の原料溶解
部と内側の結晶育成部に区分する仕切りである。仕切り
６には貫通孔７が設けられている。１２は種結晶１１に
より成長し、シリコン融液５がら引き上げられた柱状の
シリコン単結晶である。1 is a chamber in which a crucible 2 is provided in the center, and 1a is a lid thereof. In the chamber 1, a support shaft 4 that supports the graphite crucible 3 in a rotatable and vertically movable manner, a heater 8 as a heating means, and a heat insulating material 9 provided around it are arranged! has been done. The crucible 2 is made of quartz and is set within a graphite crucible 3. Reference numeral 6 denotes a partition that divides the silicon melt 5 in the crucible 2 into an outer raw material melting section and an inner crystal growth section. A through hole 7 is provided in the partition 6. 12 is a columnar silicon single crystal grown by the seed crystal 11 and pulled up from the silicon melt 5.
４０は引き上げ装置で引き上げチャンバ１ｂ、シードチ
ャックを介して種結晶１１が取り付けられたワイヤ１０
、前記ワイヤが巻回されたワイヤ巻取装置１３およびゲ
ートバルブ１４で構成されている。Reference numeral 40 denotes a pulling device, which includes a pulling chamber 1b and a wire 10 to which a seed crystal 11 is attached via a seed chuck.
, a wire winding device 13 around which the wire is wound, and a gate valve 14.
２０は原料供給装置である。チャンバ１の上部にチャン
バ１内と連通ずる箱体２１が設けられている。この箱体
２１の上部にはシリコン塊状原料３０を補充する際の開
閉用蓋３１が設けられており、シール用の０リング３２
を介して箱体２１にボルト締めされている。２２は箱体
２１の内部に設けられ、図示しない駆動機構により中心
軸周りの回転運動が可能であるとともに、傾筒軸２３を
中心として中心軸の傾斜角度を調節可能とした貯蔵筒で
ある。２４はシリコン塊状原料３０の入口側端部が、出
口側端部より高さが高くなるように傾斜して設けられ、
図示しない駆動機構により中心軸周りの回転運動を可能
とした計量筒である。20 is a raw material supply device. A box body 21 is provided at the top of the chamber 1 and communicates with the inside of the chamber 1. A lid 31 for opening and closing when replenishing the bulk silicon raw material 30 is provided at the top of the box body 21, and an O-ring 32 for sealing is provided.
It is bolted to the box body 21 via. Reference numeral 22 denotes a storage cylinder that is provided inside the box body 21 and is rotatable around a central axis by a drive mechanism (not shown), and the inclination angle of the central axis can be adjusted around a tilting cylinder shaft 23. 24 is inclined so that the inlet side end of the silicon bulk raw material 30 is higher than the outlet side end;
This is a measuring cylinder that can be rotated around a central axis by a drive mechanism (not shown).
貯蔵筒２２の出口部分と計量筒２４の入口側端部の間に
は貯蔵筒２２より排出されたシリコン塊状原料３０を計
量筒２４に導くシュート２５が設けられている。計量筒
２４にはシリコン塊状原料３０の重量を計測する荷重計
２６が取り付けられている。計量筒２４よりシリコン塊
状原料３０が排出された瞬間に、排出されたシリコン塊
状原料３０の重量骨だけ計測値が低下するので、前１己
荷重計２６により所定時間内におけるこの低下量の累計
値を演算して、シリコン塊状原料３０の坩堝２への供給
量を計量することができる。２７は計量筒出口の下方に
設けられた第１の案内管である。２８はゲートバルブ２
つを介し原料溶解部のシリコン融液に原料を供給する第
２の案内管である。A chute 25 is provided between the outlet of the storage cylinder 22 and the inlet end of the measuring cylinder 24 for guiding the silicon lump raw material 30 discharged from the storage cylinder 22 to the measuring cylinder 24. A load meter 26 for measuring the weight of the silicon lump raw material 30 is attached to the measuring cylinder 24 . The moment the silicon block raw material 30 is discharged from the measuring tube 24, the measured value decreases by the weight of the discharged silicon block raw material 30, so the front 1 self-load meter 26 calculates the cumulative value of this decrease within a predetermined time. can be calculated to measure the amount of silicon lump raw material 30 to be supplied to the crucible 2. 27 is a first guide pipe provided below the measuring tube outlet. 28 is gate valve 2
This is a second guide pipe that supplies the raw material to the silicon melt in the raw material melting section through the second guide pipe.
次に、上記のように構成された本実施例の作用を説明す
る。シリコン単結晶１２の育成中は、原料供給装置２０
により仕切り６で区分された外側の原料溶解部のシリコ
ン融液５に、第２の案内管２８を通してシリコン塊状原
料３０が投入される。その量は単結晶の育成量と同等で
ある。Next, the operation of this embodiment configured as described above will be explained. During the growth of the silicon single crystal 12, the raw material supply device 20
A silicon lump raw material 30 is introduced into the silicon melt 5 in the outer raw material melting section divided by the partition 6 through the second guide pipe 28. The amount is equivalent to the amount of single crystal growth.
貯蔵筒２２内に装入されたシリコン塊状原料３０は、該
貯蔵筒２２の回転運動によって貯蔵筒２２の開口部より
排出される。ついでシュート２５を経て計量筒２４に供
給される。計量筒２４の入口側端部は出口側端部より高
さが高くなるように設けられているので、計量筒２４の
入口側端部に供給されたシリコン塊状原料３０は、計量
筒２４の回転運動によって計量筒内を高さの低い出口側
端部に向かって軸方向に移動する。The silicon lump raw material 30 charged into the storage cylinder 22 is discharged from the opening of the storage cylinder 22 by the rotational movement of the storage cylinder 22 . It is then supplied to the measuring tube 24 via the chute 25. Since the inlet side end of the measuring cylinder 24 is provided so as to be higher than the outlet side end, the silicon lump raw material 30 supplied to the inlet side end of the measuring cylinder 24 is The movement causes it to move axially within the metering barrel toward the outlet end with a lower height.
計量筒２４の出口側端部から排出されたシリコン塊状原
料３０は、第１の案内管２７および第２の案内管２８を
経て、坩堝２の原料溶解部のシリコン融液５に投入され
る。シリコン塊状原料３０のシリコン融液面への投入量
は、計量筒２４内のシリコン塊状原料３０が該計量筒内
を軸方向に移動する速度によって決まる。また、原料の
該計量筒内移動速度は計量筒の回転速度によって調整す
ることができる。従って、計量筒２４に取り付けた荷重
計２６の計測値を監視しながら、計量筒２４の回転数を
調節することにより投入量が調節される。The bulk silicon raw material 30 discharged from the outlet end of the measuring tube 24 passes through the first guide pipe 27 and the second guide pipe 28 and is introduced into the silicon melt 5 in the raw material melting section of the crucible 2 . The amount of the silicon lump raw material 30 charged to the silicon melt surface is determined by the speed at which the silicon lump raw material 30 in the measuring cylinder 24 moves in the axial direction within the measuring cylinder. Furthermore, the moving speed of the raw material within the measuring cylinder can be adjusted by the rotational speed of the measuring cylinder. Therefore, the input amount is adjusted by adjusting the rotation speed of the measuring cylinder 24 while monitoring the measured value of the load cell 26 attached to the measuring cylinder 24.
貯蔵筒２２内にシリコン塊状原料３０を補充する際は、
ゲートバルブ２９を閉じ、傾筒軸２３を中心として貯蔵
筒２２の中心軸が垂直になるように貯蔵筒を回転する。When replenishing the silicon lump raw material 30 into the storage cylinder 22,
The gate valve 29 is closed, and the storage cylinder is rotated about the tilting cylinder shaft 23 so that the central axis of the storage cylinder 22 becomes vertical.
ついで、箱体２１上部の開閉用蓋３１を開けてシリコン
塊状原料３０を補充する。Next, the opening/closing lid 31 on the top of the box 21 is opened and the silicon block raw material 30 is replenished.
また本発明に係る原料供給装置２０において、シリコン
塊状原料３０が接触する貯蔵筒２２、計量筒２４、シュ
ート２５、第１の案内管２７、第２の案内管２８等を、
テフロン、石英またはシリコンで構成すれば、不純物が
混入することを防止することができる。In addition, in the raw material supply device 20 according to the present invention, the storage cylinder 22, measuring cylinder 24, chute 25, first guide pipe 27, second guide pipe 28, etc., which the silicon lump raw material 30 comes into contact with,
If it is made of Teflon, quartz, or silicon, it is possible to prevent contamination with impurities.
［発明の効果］
本発明の単結晶製造装置によれば、原料の貯蔵筒、前記
貯蔵筒から原料を受けて坩堝に供給する計量筒および計
量筒内の原料の坩堝への供給量を計量する荷重計が設け
られであるので、単結晶の育成に一般に広く使用されて
いるシリコン塊状原料を坩堝内に連続的に供給しながら
シリコン単結晶を育成することが可能となる。[Effects of the Invention] According to the single crystal manufacturing apparatus of the present invention, there is provided a raw material storage cylinder, a measuring cylinder that receives the raw material from the storage cylinder and supplies it to the crucible, and a measuring cylinder that measures the amount of the raw material in the measuring cylinder to be supplied to the crucible. Since a load meter is provided, it becomes possible to grow a silicon single crystal while continuously supplying a bulk silicon raw material, which is generally widely used for growing single crystals, into the crucible.
１・・チャンバ、１ａ・・チャンバの菱、１ｂ・・・弓
き上げチャンバ、２・・・坩堝、３・・黒鉛坩堝、４・
・・支持軸、５・・・シリコン融液、６・・仕切り、７
・・貫通孔、８・・ヒータ、９・・・断熱材、１ｏ・・
・弓き上げワイヤ、１１・・・種結晶、１２・・シリコ
ン単結晶、１３・ワイヤ巻取装置、１４．２９・・・ゲ
トバルブ、２ｏ・・原料供給装置、２１・・・箱体、２
２・・・貯蔵筒、２３・・傾簡軸、２４川計量筒、２５
・・・シュート、２６・・・荷重計、２７・・第１の案
内管、２８・・第２の案内管、３ｏ・・・シリコン塊状
原料、３１・・・開閉用蓋、３２・・０リング、４０・
・・引き上げ装置。1...Chamber, 1a...Chamber diamond, 1b...Archive chamber, 2...Crucible, 3...Graphite crucible, 4...
...Support shaft, 5...Silicon melt, 6...Partition, 7
...Through hole, 8...Heater, 9...Insulating material, 1o...
- Bow raising wire, 11... Seed crystal, 12... Silicon single crystal, 13. Wire winding device, 14. 29... Gate valve, 2o... Raw material supply device, 21... Box body, 2
2...Storage tube, 23...Tilt axis, 24 River measuring tube, 25
...Chute, 26...Load cell, 27...First guide tube, 28...Second guide tube, 3o...Silicon block raw material, 31...Opening/closing lid, 32...0 Ring, 40・
...Lifting device.
Claims (3)
る坩堝と、該坩堝の周囲に設けられ、該坩堝を加熱する
電気抵抗式の加熱手段と、該融液から単結晶を引き上げ
る引き上げ装置と、該融液の貫通孔を有し、該坩堝内に
設けられ外側の原料溶解部と内側の結晶育成部に区分す
る仕切りと、該原料溶解部に結晶原料を供給する原料供
給装置とを有し、塊状原料を供給しながら単結晶を育成
するシリコン単結晶の製造装置において、 該塊状原料を保持し、中心軸がほぼ水平で、該中心軸の
回りに回転可能に設けられた貯蔵筒と、塊状原料が一方
の端部より他方の端部へ通過できる内径を有し、かつ出
口となる端部が入口となる端部より高さが低くなるよう
に傾斜され、中心軸の回りに回転可能に、貯蔵筒の下流
側に設けられた計量筒と、該計量筒を通過する塊状原料
の重量を計測するため該計量筒に取り付けた荷重計と、
を有する原料供給装置を設けたことを特徴とする単結晶
製造装置。(1) A crucible that holds a melt of crystal raw material and rotates around a vertical axis, an electric resistance heating means provided around the crucible to heat the crucible, and a single crystal from the melt. a pulling device, a partition having a through hole for the melt and provided in the crucible to divide it into an outer raw material melting section and an inner crystal growth section, and a raw material supply supplying the crystal raw material to the raw material melting section. In a silicon single crystal production device that grows a single crystal while supplying a lumpy raw material, the silicon single crystal manufacturing device has a device that holds the lumpy raw material, has a substantially horizontal central axis, and is rotatable around the central axis. The storage cylinder has an inner diameter that allows the bulk raw material to pass from one end to the other, and is inclined so that the end serving as the outlet is lower in height than the end serving as the inlet, and has a central axis. a measuring cylinder rotatably provided on the downstream side of the storage cylinder; a load cell attached to the measuring cylinder for measuring the weight of the lumped raw material passing through the measuring cylinder;
1. A single-crystal production device characterized by being provided with a raw material supply device having the following.
とを特徴とする特許請求範囲第１項に示す単結晶製造装
置。(2) The single crystal manufacturing apparatus as set forth in claim 1, wherein the storage cylinder and the measuring cylinder are cylindrical in shape.
またはシリコンで構成したことを特徴とする特許請求範
囲第１項および第２項に示す単結晶製造装置。(3) The single crystal manufacturing apparatus as set forth in claims 1 and 2, wherein the storage cylinder and the measuring cylinder are made of Teflon, quartz, or silicon.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2051326A JPH03252386A (en) | 1990-03-02 | 1990-03-02 | Device for producing single crystal |
| DE19914190411 DE4190411T1 (en) | 1990-03-02 | 1991-03-01 | |
| KR1019910701501A KR920701531A (en) | 1990-03-02 | 1991-03-01 | Single Crystal Manufacturing Equipment |
| PCT/JP1991/000273 WO1991013192A1 (en) | 1990-03-02 | 1991-03-01 | Single crystal production apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2051326A JPH03252386A (en) | 1990-03-02 | 1990-03-02 | Device for producing single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03252386A true JPH03252386A (en) | 1991-11-11 |
Family
ID=12883798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2051326A Pending JPH03252386A (en) | 1990-03-02 | 1990-03-02 | Device for producing single crystal |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH03252386A (en) |
| KR (1) | KR920701531A (en) |
| DE (1) | DE4190411T1 (en) |
| WO (1) | WO1991013192A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266017A (en) * | 2007-03-29 | 2008-11-06 | Sharp Corp | Solid material supply device, solid material processing device and solid material supply method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2754104B2 (en) * | 1991-10-15 | 1998-05-20 | 信越半導体株式会社 | Granular material feeder for pulling semiconductor single crystal |
| US5997234A (en) * | 1997-04-29 | 1999-12-07 | Ebara Solar, Inc. | Silicon feed system |
| MY166030A (en) * | 2011-04-20 | 2018-05-21 | Gtat Ip Holding Llc | Side feed system for czochralski growth of silicon ingots |
| US10202704B2 (en) | 2011-04-20 | 2019-02-12 | Gtat Ip Holding Llc | Side feed system for Czochralski growth of silicon ingots |
| CN104264229B (en) * | 2014-10-09 | 2016-08-24 | 河北晶龙阳光设备有限公司 | A kind of online doper of single crystal growing furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0523580Y2 (en) * | 1987-02-27 | 1993-06-16 | ||
| JPH01282194A (en) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | Production of single crystal |
-
1990
- 1990-03-02 JP JP2051326A patent/JPH03252386A/en active Pending
-
1991
- 1991-03-01 DE DE19914190411 patent/DE4190411T1/de not_active Withdrawn
- 1991-03-01 KR KR1019910701501A patent/KR920701531A/en not_active Application Discontinuation
- 1991-03-01 WO PCT/JP1991/000273 patent/WO1991013192A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266017A (en) * | 2007-03-29 | 2008-11-06 | Sharp Corp | Solid material supply device, solid material processing device and solid material supply method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991013192A1 (en) | 1991-09-05 |
| KR920701531A (en) | 1992-08-12 |
| DE4190411T1 (en) | 1992-05-14 |
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