KR101198854B1

KR101198854B1 - Side-docking type raw material supply apparatus for continuous growing single crystals

Info

Publication number: KR101198854B1
Application number: KR20100063973A
Authority: KR
Inventors: 조원석
Original assignee: 조원석; 주식회사 코원이노텍
Priority date: 2010-07-02
Filing date: 2010-07-02
Publication date: 2012-11-07
Also published as: KR20120003223A

Abstract

The present invention relates to a side docking raw material supply device for continuous crystal growth coupled to the side of the crystal growth apparatus in a detachable docking manner to enable continuous crystal growth by recharging the raw material for crystal growth in the chamber. It is connected to the side of the crystal growth apparatus for growing a single crystal through the raw material filled in the inner crucible, and the raw material at the other end of the transfer pipe installed through the side of the crystal growth apparatus so that one end is located on the crucible As the discharge pipe is discharged is lowered and inserted is characterized in that the raw material loaded on the side hopper is dropped through the transfer pipe to fill the crucible.

Description

Side docking type feeder for continuous crystal growth {SIDE-DOCKING TYPE RAW MATERIAL SUPPLY APPARATUS FOR CONTINUOUS GROWING SINGLE CRYSTALS}

The present invention relates to a side docking raw material supply device for continuous crystal growth, and is coupled to the side of the crystal growth apparatus in a detachable docking method to enable continuous crystal growth by recharging the raw material for crystal growth in the chamber. It relates to a side docking raw material feeder for continuous crystal growth.

As is well known, a crystalline material is divided into a single crystal and a polycrystal, and a single crystal refers to a crystal in which the directionality of an atomic arrangement is constant throughout, and a polycrystal refers to a crystal in which crystal grains and grain boundaries exist.

Here, the grains (grsin) refers to each part having the same directionality of the atomic arrangement, and the boundary between the grains and the grains is called a grain boundary (grain boundary). That is, although the basic cells of each grain are the same, the orientation in which the basic cells are arranged is different for each grain. Thus, single crystals do not have grain boundaries. Such single crystals are mainly used as semiconductor materials or optical materials, such as silicon wafers, and are made from polycrystals to single crystals through crystal growth.

Usually, the single crystal growth method includes a Czochralski crystal growth method and a float zone crystal growth method, also referred to as a pulling method.

In the single crystal growth method according to the above-mentioned pulling method, a raw material is charged into a crucible, heated and melted, and then gradually immersed in a melt while seed seed is immersed and rotated to grow crystals from seed crystals to form a large single crystal. To grow. This pulling method has the advantage of being able to grow high quality single crystals in large size in a relatively short time.

In the conventional single crystal growth method, the raw material is injected into the crucible only once when the apparatus is operated. When the growth of the silicon single crystal is completed, the temperature of the crystal growth apparatus is cooled to 500 ° C. or less at which oxidation does not occur. At this time, the method of cooling the crystal growth apparatus is to release the power applied to the internal heater and then to naturally cool until the temperature of the chamber in the crystal growth apparatus is 500 ℃ or less.

However, since the crucible is heated at a temperature higher than 1420 ° C., which is the melting point of silicon, to melt the silicon, the temperature in the center of the chamber is maintained at a temperature higher than 1000 ° C. even when the heater is turned off. In such a high temperature state, cooling the temperature of the chamber to 500 ° C. or less using only a natural cooling method takes a long time, and thus there is a disadvantage in that continuous production of the ingot is impossible.

Furthermore, when the heater is turned off, the silicon solution inside the crucible hardens and is broken, making it impossible to use the device.

An object of the present invention is to solve the problems of the conventional single crystal growth apparatus as described above, it is coupled in a detachable docking method to the side of the crystal growth apparatus to recharge the raw material for crystal growth in the chamber (Recharge) It is to provide a side docking raw material feeder for continuous crystal growth.

The present invention is a means for solving the above problems, is detachably connected to the side of the crystal growth apparatus for growing a single crystal through the raw material filled in the inner crucible, one end of the crystal growth apparatus is located on the crucible The side docking type for continuous crystal growth, characterized in that the discharge pipe is discharged to the other end of the transfer pipe installed through the side is lowered and inserted into the crucible by dropping the raw material loaded in the side hopper through the transfer pipe Provide raw material feeder.

Preferably, the side docking raw material supply apparatus, the raw material filling chamber is moved to the side of the crystal growth apparatus connected; A hopper coupled to the side of the raw material filling chamber to drop the raw material; Raw material supply control unit for adjusting the input amount of the raw material supplied from the hopper; An impurity injecting unit provided in the raw material filling chamber for injecting impurities; A raw material supply pipe that receives and discharges the raw materials and impurities; An elevating unit for elevating the raw material supply pipe; And an opening / closing coupling part configured to open or close the discharge pipe of the raw material supply pipe to insert and detach the discharge pipe.

More preferably, the transfer pipe is a pipe having a hollow shape, one end is located on the crucible and the other end is characterized in that the discharge pipe is formed in a vertical shape from the outside to be inserted.

More preferably, the hopper is characterized in that the raw material injection port for receiving the raw material from the outside is formed.

More preferably, the lower portion of the hopper is characterized in that the weight measuring unit for measuring the weight that changes according to the discharge of the raw material of the hopper is disposed.

More preferably, the raw material supply control unit, the hollow receiving tube of the discharge end of the hopper is accommodated; An opening and closing hole for opening and closing the lower portion of the receiving tube by moving up and down at the lower portion of the receiving tube; A motor unit coupled to the opening and closing hole to vertically move the opening and closing hole; And an adjusting inlet tube accommodating the accommodation tube and the opening and closing inside and discharging the discharged raw material downward. And a control unit.

More preferably, the opening and closing is provided with a hemispherical dish in contact with the receiving tube at the top, characterized in that the dish and the receiving tube is made of a silicon material.

More preferably, the raw material supply pipe has two openings through which raw materials and impurities are supplied, and a discharge pipe is formed at the lower side thereof, so that the lower end of the discharge pipe passes through the ball valve of the open / close coupling portion and is inserted into the transfer pipe when docked. It is characterized by.

More preferably, the elevating unit, the top plate is coupled to the discharge pipe in a penetrating state; A lower plate through which the discharge pipe passes; And a cylinder coupled between the upper plate and the lower plate to raise and lower the upper plate. Including a lowering the discharge pipe when docking.

More preferably, a vacuum port and a gas injection port are formed on one side of the raw material filling chamber to make the interior of the raw material filling chamber into a vacuum state through the vacuum port when the raw material filling chamber is docked, and to separate the raw material filling chamber. Shut off the valve of the vacuum port and injecting gas through the gas injection port is characterized in that the inside of the material filling chamber to the atmospheric pressure state.

The side docking raw material supply device for continuous crystal growth according to the present invention is coupled in a detachable docking manner to the side of the crystal growth apparatus to enable continuous crystal growth by recharging the raw material for crystal growth in the chamber. It works.

In addition, it is possible to accurately measure the amount of raw material input when the raw material is supplied to the user, as well as to precisely control the input amount of the raw material, thereby increasing the production yield.

In addition, when the raw material is added, the raw material falls near the crucible, thereby enabling the stable injection of the raw material.

1 is a side cross-sectional view for explaining the docking state of the side docking raw material supply for continuous crystal growth according to the present invention.
Figure 2 is a side cross-sectional view for explaining a docking state of the side docking raw material supply for continuous crystal growth according to the present invention.
Figure 3 is a side sectional view showing a raw material supply control unit according to the present invention.
4 shows a supply box according to the invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a side cross-sectional view for explaining a state before docking the side docking raw material supply for continuous crystal growth according to the present invention, Figure 2 is a docking of the side docking raw material supply for continuous crystal growth according to the present invention It is a side sectional view for demonstrating a state.

1 and 2, in the present invention, the raw material supply device 200 is docked for recharging the raw material at the side of the crystal growing apparatus 100 where single crystal growth occurs.

First, the basic configuration of the crystal growth apparatus 100 will be briefly described to help understanding of the present invention.

The crystal growth apparatus 100 is a crucible 110 that melts polysilicon PS, a heater 120 for applying heat to the crucible 110, and is installed outside the heater 120. A silicon ingot of a desired diameter while gradually contacting the seed crystal (Seed Crystal) to the polysilicon (PS) melted to the crucible 110 and the chamber part 140 including a heat insulating member 130 to shield the It consists of a gate chamber 150 including an ingot pulling device (not shown) for growing (Ingot).

Such crystal growth apparatus 100 is generally known as a Czochralski crystal growth method and a crystal growth apparatus therefor. The Czochralski crystal growth method is a method in which seed seed crystals are grown into ingots having a predetermined diameter by dipping silicon seed crystals into a silicon melt and gradually pulling them up.

Here, since the crystal growth apparatus 100 maintains the silicon in the crucible 110 in a solution state at 1400 ° C. or higher, the quartz crucible 110 containing the silicon melt also maintains a high temperature state. The inside of the 100 may be configured to flow an inert gas (eg, Ar, etc.) in order to prevent contamination by oxides of silicon and impurities.

Since the internal structure of the above-described crystal growth apparatus 100 may be formed in various structures and types, and well-known configurations may be applied, detailed description thereof will be omitted herein.

At this time, the transfer pipe 280 of the curved form is inserted through the chamber portion 140 of the crystal growth apparatus 100. The transfer pipe 280 is a pipe having a hollow shape, coupled with the raw material discharge portion of the raw material supply device 200 to be described later and the inlet portion 281 and the inlet that receives the raw material discharged from the raw material supply device 200 And a discharge part 282 which transfers the raw material to the internal crucible 110 of the crystal growth apparatus 100 and drops the material, and a pipe connecting the inlet part 281 and the discharge part 282 is formed at a predetermined angle. do.

That is, the inlet portion 281 of the transfer pipe 280 is located outside the chamber portion 140 of the crystal growth apparatus 100 and the terminal portion is formed vertically. In addition, the discharge portion 282 is located in the chamber portion 140 of the crystal growth apparatus 100 and the end portion is positioned above the crucible 110.

Accordingly, the transfer pipe 280 may safely drop the raw material injected from the docked raw material supply device 200 on the crucible 110 in the crystal growth device 100.

At this time, the transfer pipe 280 may be formed to be stretchable so that the discharge portion 282 of the end located inside the crucible 110 can be accurately positioned at a desired position. The stretching operation of the transfer pipe 280 may be made by extending the length of the transfer pipe 280 or by adjusting the pipe angle of the transfer pipe 280.

The raw material supply device 200 docked with the crystal growth device 100 through the transfer pipe 280 provided on the side of the crystal growth device 100 is moved to the side of the crystal growth device 100 to be coupled. Raw material filling chamber 260, the hopper 210 coupled to the upper portion of the raw material filling chamber 260 to drop the raw material, and the raw material supply control unit for adjusting the input amount of the raw material supplied from the hopper 210 ( 220, the impurity injecting unit 230 for injecting impurities, a raw material supply pipe 240 for injecting and transporting the injected raw materials and impurities, and the raw material supply pipe 240 to support the raw material supply pipe 240 Opening and lowering unit 250 that is interlocked during the lifting and lowering of the), and when the docking is configured to penetrate the end of the raw material supply pipe 240 to open and close the coupling portion for coupling the raw material supply pipe 240 and the transfer pipe 250 ( 270).

The hopper 210 accommodates a raw material required for crystal growth, and discharges the raw material supplied from the outside through a lower portion in a predetermined amount. Here, the raw material required for crystal growth may be polysilicon in the form of grains having an irregular shape having a diameter of about 15 mm or less.

In order to load the raw material into the hopper 210, the raw material injection port 211 is installed on the upper portion of the hopper 210. That is, the hopper 210 is installed to be supported in the upper feed box 261 of the raw material filling chamber 260 and can pass through the upper side of the feed box 261 and the upper side of the hopper 210. The injection port 211 is fixed to the hopper 210 to be used when injecting a raw material (polysilicon) into the hopper 210 from the outside.

At this time, the raw material injection port 211 is clamped (clamping) so that the vacuum state can be maintained in normal times.

The hopper 210 may be formed in a funnel shape in which the hopper discharge portion 210a provided at the lower portion protrudes downward, thereby naturally discharging the raw material in a dropping manner, and the hopper 210 may be disposed at the lower portion of the hopper 210. A weight measuring unit 213 capable of measuring the changed weight of) is installed.

The weight measuring unit 213 is a device that can display the measured weight value by detecting a load (Load) pressed by the weight of the hopper 210, preferably may be configured as a load cell (load cell).

The weight measuring unit 213 is composed of a load cell for measuring the pressure (force or tension) applied per unit area, and measures the load by the weight of the hopper 210, and thus measured of the hopper 210 The load is received as an electrical signal (for example, 0 ~ 1V) and converted into a numerical value in the controller, and displayed as a weight value in the controller (not shown).

Therefore, when the raw material in the hopper 210 is discharged, the weight of the released raw material is sensed by the weight measuring unit 213 so that the desired amount of raw material can be accurately input and the current amount of raw material in the hopper 210 in real time. I can figure it out. In practice, the adjustment of the raw material input amount is accurately adjusted in the raw material supply control unit 220 to be described later.

3 is a side cross-sectional view showing in detail such a raw material supply control unit 220.

Referring to FIG. 3, the raw material supply adjusting unit 220 includes a hollow receiving tube 221 for allowing a portion of the hopper discharge part 210a of the hopper 210 to be accommodated, and the receiving tube 221. Opening and closing port 222 to open and close the lower portion of the receiving tube 221 by moving up and down at the bottom of the), and the motor unit 223 coupled to the opening and closing port 222 to move the opening and closing 222 up and down, and the accommodation It accommodates the tube 221 and the opening and closing port 222 therein is configured to include a control input pipe 224 for discharging the discharged raw material to the bottom.

That is, the raw material falling through the raw material discharge part 210a of the hopper 210 is once received into the receiving tube 221, the opening and closing port 222 blocking the lower portion of the receiving tube 221 is a motor The lower part of the receiving tube 221 repeats the opening and closing by moving up and down by transmitting the kinetic force of the part 223, so that the raw materials are gathered in the adjusting input pipe 224, and the raw material of the adjusting input pipe 224 is naturally lower. Drop through the inlet pipe outlet (224a).

Here, the motor unit 223 starts the operation according to the raw material supply start command of the control unit, and rotates the screw connected to the gear by forward / reverse rotation according to the PID control transmitted through the control unit to rotate the screw As the opening and closing port 222 that can be transported up and down along the screw is repeatedly raised and lowered.

Here, the PID (proportional integral derivative control) control is a kind of feedback control to maintain the output voltage of the system based on the error between the control variable and the reference input in the control of the automation system, proportional (Proportional) control And proportional-integral control and proportional-derivative control.

According to the forward / reverse rotation of the motor unit 223, the opening and closing hole 222 which discharges the raw material of the hopper 210 as desired by moving up and down at an appropriate speed is provided with a hemispherical dish 222a made of silicon on the top. In addition, the receiving tube 221, which is opened and closed at the bottom through the dish 222a, is also made of the same silicon material, so that when the closure is made, a tight sealing can be made to prevent the discharge of raw materials.

And when the release of the raw material occurs in accordance with the vertical movement of the opening and closing hole 222, the weight measuring unit 213 of the hopper 210 detects and transmits the weight to the control unit so that confirmation and control feedback can occur. do.

Therefore, the input of the raw material as desired can be made by adjusting the vertical movement speed of the opening and closing port 222, and the process of stopping after supplying the desired amount of raw material is also possible by stopping the vertical movement of the opening and closing port 222.

On the other hand, the raw material supply pipe 240 is connected to the lower portion of the input pipe discharge unit 224a of the raw material supply control unit 220 receives the raw material falling from the input pipe discharge unit (224a).

The raw material supply pipe 240 has an upper end connected to the impurity input unit 230 to receive impurities necessary for crystal growth, and a part of the raw material supply pipe 240 is connected to the end of the input pipe discharge part 224a so that the corresponding input pipe is opened. The raw material falling from the discharge part 224a is supplied. The lower end portion of the raw material supply pipe 240 extends vertically to form a discharge pipe 243 for discharging the contents in a falling manner. Therefore, the raw materials and impurities supplied in this way are discharged together through the discharge pipe 243 formed at the lower portion of the raw material supply pipe 240 to the lower side. The impurity may include at least one selected from the group consisting of antimony (Sb), bismuth (Bi), red phosphorus, germanium (Ge), gallium (Ga), and arsenic (As).

At this time, the discharge pipe 243 extending to the lower portion of the raw material supply pipe 240 penetrates the elevating unit 250, and is inserted into the transfer pipe 280 in accordance with the operation of the opening and closing coupling unit 270, the raw material supply device 200 ) And the crystal growth apparatus 100 is docked.

The elevating unit 250 includes an upper plate 251 through which the discharge pipe 243 is coupled, and a lower plate 252 through which the discharge pipe 243 penetrates between the upper plate 251 and the lower plate 252. It is coupled to the upper plate 251 is made up of a cylinder 252 to raise and lower.

The open / close coupling part 270 is provided with a ball valve 271 at a position where the discharge pipe 243 is discharged downward from the lower plate 252, and the ball valve 271 is operated by the open / close motor 272. To an open or closed state.

Therefore, when the ball valve 271 is opened by the on / off motor 272 of the open / close coupling portion 270, the discharge pipe 243 descends to penetrate the ball valve 271, and at this time, the discharge pipe 243. The lower end of) is inserted into the transfer pipe 280 to allow the raw material and impurities to be discharged to the crucible 110 of the crystal growth apparatus 100 through the transfer pipe 280.

When the supply of raw materials and impurities is completed, the upper plate 251 is lifted by the cylinder 252, and the discharge pipe 243 coupled with the upper plate 251 is lifted and exited from the ball valve 271. As the 271 is closed by the on-off motor 272, the combined state for transferring the raw material is released.

Eventually, the ball valve 271 is opened by the operation of the open / close motor 272, and thus the raw material supply device 200 and the crystal growth device 100 are combined, and the raw material discharged from the hopper 210 is combined. To be safely dropped to the crucible 110.

Here, the hopper 210, the raw material supply control unit 220, the impurity injecting unit 230, the raw material supply chamber 260 in which the raw material supply pipe 240, and the like are raised and lowered and descending part 250 and the lower portion thereof. 1 and 2, the coupling part 270 is rotatably configured by the side arm of the support pillar, and when refilling the raw material, the coupling part 270 is docked on the side of the crystal growth apparatus 100 so as to be hopper 210. The raw material falling from is supplied to the crucible 110 in the crystal growth apparatus 100, and after the refilling of the raw material is rotated by the side arm to be separated and removed.

In fact, when the growth of the silicon single crystal is completed, the temperature of the crystal growth apparatus 100 is cooled to 500 ° C. or less at which oxidation does not occur. At this time, the method of cooling the crystal growth apparatus 100 is a method of naturally cooling until the temperature of the chamber in the crystal growth apparatus 100 becomes 500 ° C or lower after releasing the power applied to the internal heater 120. Will be used.

However, since the crucible 110 is heated at a high temperature of 1420 ° C. or more, which is the melting point of silicon, in order to melt the silicon, the temperature in the center of the chamber is maintained at a temperature higher than 1000 ° C. even when the heater 120 is turned off. In such a high temperature state, it takes a long time to cool the temperature of the chamber to 500 ° C. or less using only a natural cooling method. For example, it takes about 11 to 12 hours to cool an existing chamber.

In addition, when the power supply of the heater 120 is released in this way, the silicon solution inside the crucible 110 is hardened and broken, so that it is impossible to use the device.

Therefore, the raw material must be recharged to the crucible 110 in the crystal growth apparatus 100 through the raw material supply device 200 which can be docked and separated from the side as in the present invention. The work wait time is reduced, and the productivity is extremely improved by reducing the time and manpower, such as eliminating the need for a separate crucible processing work.

Meanwhile, the principle of docking the raw material supplier 200 to the side of the crystal growth apparatus 100 will be described below.

During side docking, the raw material filling chamber 260 of the raw material supply device 200 is moved to be coupled to the transfer pipe 280 on the side of the crystal growth apparatus 100.

4 shows one side of the supply box 261 at the top of the raw material filling chamber 260.

Referring to FIG. 4, a vacuum port 262 and a gas injection port 263 are formed at an upper side of the raw material filling chamber 260. A vacuum line is connected to the vacuum port 262, and a gas line is connected to the gas injection port 263. Accordingly, when the raw material filling chamber 260 is docked, the inside of the raw material filling chamber 260 is made into a vacuum state through the vacuum port 262. In addition, the gas is injected through the gas injection port 263 installed in the raw material filling chamber 260 to match the vacuum state of the raw material filling chamber 260, the gate chamber 150, and the chamber part 140. Can be matched.

On the other hand, when the filling of the raw material is completed to close the valve of the vacuum port 262 in order to make the pressure in the raw material filling chamber 260 from the vacuum state to atmospheric pressure to shut off the vacuum line and through the gas injection port 263 By injecting gas, the inside of the corresponding material filling chamber 260 is made into an atmospheric pressure state, and thus the corresponding material filling chamber 260 can be separated.

As described above, an optimal embodiment has been disclosed in the drawings and specification. Although specific terms have been employed herein, they are used for purposes of illustration only and are not intended to limit the scope of the invention as defined in the claims or the claims. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

100: crystal growth apparatus 110: crucible
120: heater 130: heat insulating member
140: chamber portion 150: gate chamber
200: raw material supply device 210: hopper
211: raw material injection port 210a: hopper discharge portion
220: raw material supply control unit 221: receiving pipe
222: opening and closing door 222a: dish
223 motor portion 224 adjustment tube
224a: inlet tube outlet 230: impurity inlet
240: raw material supply pipe 243: discharge pipe
250: elevating unit 251: upper plate
252: bottom plate 253: cylinder
260: raw material filling chamber 261: supply box
262: vacuum port 263: gas injection port
270: open and close coupling portion 271: ball valve
272: open and close motor 280: transfer pipe
281: inlet 282: outlet

Claims

Removably connected to the side of the single crystal growth apparatus, the discharge pipe is inserted into the transfer pipe installed through the side of the single crystal growth apparatus is inserted into the side hopper by dropping the raw material loaded through the transfer tube to fill the crucible Side docking feeder for continuous crystal growth.

The method of claim 1,
The side docking raw material supply device,
A raw material filling chamber connected to and moved to the side of the crystal growth apparatus;
A hopper coupled to an upper portion of the raw material filling chamber to drop raw materials;
Raw material supply control unit for adjusting the input amount of the raw material supplied from the hopper;
An impurity injecting unit provided in the raw material filling chamber for injecting impurities;
A raw material supply pipe that receives and discharges the raw materials and impurities;
An elevating unit for elevating the raw material supply pipe; And
Side opening-type docking raw material supply apparatus for continuous crystal growth comprising a; opening and closing the opening and closing of the discharge pipe of the raw material supply pipe to insert into the transfer pipe.

The method of claim 1,
The transport pipe is a pipe having a hollow shape, one end of which is located on the crucible and the other end of the side docking raw material supply for continuous crystal growth, characterized in that the discharge pipe is formed in a vertical shape to be inserted from the outside Device.

The method of claim 2,
Side docking raw material supply apparatus for continuous crystal growth, characterized in that the hopper is formed with a raw material injection port for receiving the raw material from the outside.

The method of claim 2,
The lower side of the hopper is a side docking raw material supply device for continuous crystal growth, characterized in that the weight measuring unit for measuring the weight changes in accordance with the discharge of the raw material of the hopper is disposed.

The method of claim 2,
The raw material supply control unit,
A hollow accommodating tube accommodating an outlet end of the hopper;
An opening and closing hole for opening and closing the lower portion of the receiving tube by moving up and down at the lower portion of the receiving tube;
A motor unit coupled to the opening and closing hole to vertically move the opening and closing hole; And
An adjusting inlet tube accommodating the accommodation tube and the opening and closing portion and discharging the discharged raw material downward; Side docking raw material supply device for continuous crystal growth comprising a.

The method according to claim 6,
The opening and closing is provided with a hemispherical dish in contact with the receiving tube on the upper side, the side docking raw material supply apparatus for continuous crystal growth, characterized in that the dish and the receiving tube is made of a silicon material.

The method of claim 2,
The raw material supply pipe is formed with two openings for receiving the raw material and impurities and a discharge pipe formed at the lower side, so that the lower end of the discharge pipe is inserted into the transfer pipe through the ball valve of the opening and closing portion when docking. Side docking feeder for continuous crystal growth.

The method of claim 8,
The ascending /
An upper plate to which the discharge pipe is coupled in a penetrating state;
A lower plate through which the discharge pipe passes; And
A cylinder coupled between the upper plate and the lower plate to raise and lower the upper plate; Side docking raw material supply device for continuous crystal growth, characterized in that to lower the discharge pipe when docking.

The method of claim 2,
A vacuum port and a gas injection port are formed at one side of the raw material filling chamber to make the inside of the raw material filling chamber into a vacuum state through the vacuum port when the raw material filling chamber is docked, and the vacuum port is separated when the raw material filling chamber is separated. Side docking type raw material supply device for continuous crystal growth, characterized in that for closing the valve and injecting gas through the gas injection port to make the inside of the material filling chamber to atmospheric pressure.