JPH0769776A - Equipment for pulling up silicone single crystal - Google Patents
Equipment for pulling up silicone single crystalInfo
- Publication number
- JPH0769776A JPH0769776A JP21642593A JP21642593A JPH0769776A JP H0769776 A JPH0769776 A JP H0769776A JP 21642593 A JP21642593 A JP 21642593A JP 21642593 A JP21642593 A JP 21642593A JP H0769776 A JPH0769776 A JP H0769776A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- feeder
- granular
- eccentric hole
- cylindrical feeder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はチョクラルスキー単結晶
引上法によるシリコン単結晶の引上工程での粒状ポリシ
リコンや不純物ドーパントの供給装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for supplying granular polysilicon or an impurity dopant in the step of pulling a silicon single crystal by the Czochralski single crystal pulling method.
【0002】[0002]
【従来の技術】従来、チョクラルスキー単結晶引上法に
よるシリコン単結晶の引上工程における、粒状ポリシリ
コンをルツボ内に供給する装置は、円筒の先端を絞り、
そこに円錐状の弁や、シャッター形式の弁を取付け、そ
の開閉によって粒状ポリシリコンの供給をコントロール
する形式の供給装置、あるいはベルトコンベヤなどを利
用して粒状ポリシリコンを供給する供給装置が用いられ
ている。2. Description of the Related Art Conventionally, an apparatus for supplying granular polysilicon into a crucible in a silicon single crystal pulling process by the Czochralski single crystal pulling method squeezes the tip of a cylinder,
A conical valve or a shutter-type valve is attached there, and a supply device of the type that controls the supply of granular polysilicon by opening and closing it, or a supply device that supplies granular polysilicon using a belt conveyor or the like is used. ing.
【0003】[0003]
【発明が解決しようとする課題】通常、このような粒状
ポリシリコン等の粒状物の供給の開始、停止時には弁や
シャッター形式の構造が使用されるが、このような構造
ではかならず部材同士の摩擦部等からの発塵物が粒状ポ
リシリコンに混入し、引上げられる単結晶の品質が低下
したり、又は歩留りが低下するなどの問題がある。また
粒状ポリシリコンを連続供給しながら単結晶を引上る方
式では供給されるポリシリコンの量の精密なコントロー
ルが必要であるが、従来のベルトコンベヤ方式や、ホッ
パの弁の開度ではその精密コントロールは難しい。また
従来の供給装置は、構造が複雑で高純度石英や高純度ポ
リシリコンのようなシリコン単結晶の引上に影響を与え
ない材料でつくることが困難である。Normally, a valve or shutter type structure is used at the time of starting and stopping the supply of the granular material such as the granular polysilicon. However, such a structure always causes friction between members. Particulates and the like are mixed into the granular polysilicon, and there is a problem that the quality of the pulled single crystal deteriorates, or the yield decreases. In addition, while the method of pulling up a single crystal while continuously supplying granular polysilicon requires precise control of the amount of polysilicon to be supplied, the conventional belt conveyor method and the precise control of the opening of the hopper valve are required. Is difficult Further, it is difficult for the conventional supplying device to be made of a material that has a complicated structure and does not affect pulling of a silicon single crystal such as high-purity quartz or high-purity polysilicon.
【0004】本発明はこのような問題点を解決したシリ
コン単結晶引上装置を提供することを目的とする。It is an object of the present invention to provide a silicon single crystal pulling apparatus that solves the above problems.
【0005】[0005]
【課題を解決するための手段】本発明は、ルツボ内に粒
状原料を供給する供給装置を備えたシリコン単結晶引上
装置において、供給粒状原料を安息角で内部に滞留させ
る傾斜円筒からなり、底鏡板に偏心孔を有し、軸を中心
として回転する円筒状フィーダと、円筒状フィーダの回
転に伴って前記偏心孔から流出する粒状原料を受けてル
ツボ内に間欠定量排出する排出路とを備え、前記円筒状
フィーダに回転速度変更自在な駆動装置を備えたことを
特徴とするシリコン単結晶引上装置である。DISCLOSURE OF THE INVENTION The present invention is a silicon single crystal pulling apparatus provided with a supply device for supplying a granular raw material into a crucible, which comprises an inclined cylinder for retaining the supplied granular raw material inside at a repose angle. The bottom end plate has an eccentric hole, and has a cylindrical feeder that rotates about an axis, and a discharge path that intermittently discharges the granular raw material that flows out from the eccentric hole with the rotation of the cylindrical feeder into the crucible. The apparatus for pulling a silicon single crystal is characterized in that the cylindrical feeder is provided with a drive device capable of changing a rotation speed.
【0006】前記排出路としては、円筒状フィーダの底
鏡板周縁に添って配設され、一端を前記偏心孔に結合
し、他端を開口した湾曲管とし、その湾曲管の長さは、
円筒状フィーダの1回転ごとに偏心孔から排出する粒状
原料が排出完了してから、湾曲管から排出する長さとす
ることが円滑な原料供給上好ましく、このための必要長
さは、底鏡板の周縁の四分の一円周以上の長さとすると
好適である。The discharge path is a curved tube which is arranged along the periphery of the bottom end plate of the cylindrical feeder, and has one end coupled to the eccentric hole and the other end open, and the length of the curved tube is
It is preferable in terms of smooth material supply that the granular material discharged from the eccentric hole is discharged from the eccentric hole after each rotation of the cylindrical feeder and then discharged from the curved tube. The required length for this is the length of the bottom end plate. It is preferable that the length is equal to or longer than a quarter of the circumference.
【0007】また、円筒状フィーダの材質を高純度シリ
コン又は高純度石英とすると、粒状原料に不純物が混入
するおそれがなくなるので、好ましい。Further, it is preferable to use high-purity silicon or high-purity quartz as the material of the cylindrical feeder, because there is no risk of impurities being mixed into the granular raw material.
【0008】[0008]
【作用】本発明の粒状ポリシリコン等の供給装置の供給
開始と停止は次のように行う。傾斜した円筒状フィーダ
の底の鏡板に偏心孔が設けてあり、その孔が、例えば、
円筒の周辺に沿って設けられた湾曲管からなる排出路に
つながっている。傾斜した円筒状フィーダを一回転させ
ることによって、粒状ポリシリコンが偏心孔から一定量
排出し、排出路を通ってルツボに供給される。円筒状フ
ィーダの回転の開始、停止で粒状原料の供給開始、停止
を行うことができる。回転数を制御することによって供
給量のコントロールを行うことができる。The starting and stopping of the supply of the granular polysilicon or the like according to the present invention is performed as follows. An eccentric hole is provided in the end plate of the inclined cylindrical feeder, and the hole is, for example,
It is connected to a discharge passage formed of a curved pipe provided along the periphery of the cylinder. By rotating the inclined cylindrical feeder once, a certain amount of granular polysilicon is discharged from the eccentric hole and is supplied to the crucible through the discharge passage. It is possible to start and stop the supply of the granular raw material by starting and stopping the rotation of the cylindrical feeder. The supply amount can be controlled by controlling the rotation speed.
【0009】円筒状フィーダは原料ホッパの下部に連結
されており、円筒状フィーダ内の粒状原料は安息角を保
って保持されている。円筒状フィーダ内の粒状原料の量
が減って間隙ができると、安息角によって、供給ホッパ
から円筒状フィーダ内に粒状原料が静かに円滑に供給さ
れる。粒状原料である粒状ポリシリコンの通路には部材
同士が摺動、衝突する部分がなくポリシリコン中に不純
物が混入しない。さらに粒状ポリシリコンの通るすべて
の部分をシリコンまたは石英とすると不純物の混入を防
止することができる。The cylindrical feeder is connected to the lower part of the raw material hopper, and the granular raw material in the cylindrical feeder is held at an angle of repose. When the amount of the granular raw material in the cylindrical feeder is reduced to form a gap, the angle of repose allows the supply hopper to smoothly and smoothly supply the granular raw material into the cylindrical feeder. There is no portion where members slide and collide with each other in the passage of the granular polysilicon which is the granular raw material, and impurities are not mixed into the polysilicon. Further, if all the parts through which the granular polysilicon passes are made of silicon or quartz, it is possible to prevent the mixing of impurities.
【0010】[0010]
【実施例】図4は実施例のシリコン単結晶引上装置の縦
断面図である。チョクラルスキー単結晶引上装置は、石
英ルツボ8が黒鉛ルツボ7に支持され、石英ルツボ8内
にシリコン溶湯9を保持し、加熱用ヒータ6によってこ
れを加熱する。原料粒状ポリシリコン2はホッパ3内に
収納され、その下端に傾斜円筒から成る円筒状フィーダ
1を設け、連結部4がその中に挿入されている。粒状ポ
リシリコン2は連結部4を経て安息角により円筒状フィ
ーダ1内に流下し供給される。円筒状フィーダ1はフィ
ーダ回転用モータ12により駆動されて回転する。EXAMPLE FIG. 4 is a vertical sectional view of a silicon single crystal pulling apparatus of an example. In the Czochralski single crystal pulling apparatus, a quartz crucible 8 is supported by a graphite crucible 7, a molten silicon 9 is held in the quartz crucible 8 and heated by a heater 6 for heating. The raw material granular polysilicon 2 is housed in a hopper 3, a cylindrical feeder 1 formed of an inclined cylinder is provided at the lower end of the hopper 3, and a connecting portion 4 is inserted therein. The granular polysilicon 2 flows down through the connecting portion 4 into the cylindrical feeder 1 at an angle of repose and is supplied. The cylindrical feeder 1 is driven by a feeder rotation motor 12 to rotate.
【0011】供給導入管5は円筒状フィーダ1から排出
された粒状ポリシリコンをルツボ8内に誘導する。原料
ホッパ3、円筒状フィーダ1等は密閉容器10内に収納
されており、フィーダ回転用モータ12の軸が密閉容器
の壁を貫通する部分は真空シール11によってシールさ
れている。図1に実施例の円筒状フィーダ1の要部斜視
図を示した。円筒状フィーダ1は軸心が傾斜しており、
円筒壁21、底鏡板26、偏心孔24、排出路23、排
出口22、ホッパとの連絡開口25から成っており、図
4に示す回転数変更自在な回転モータ12によって軸心
まわりに回転する。The supply introduction pipe 5 guides the granular polysilicon discharged from the cylindrical feeder 1 into the crucible 8. The raw material hopper 3, the cylindrical feeder 1 and the like are housed in a closed container 10, and the portion where the shaft of the feeder rotation motor 12 penetrates the wall of the closed container is sealed by a vacuum seal 11. FIG. 1 shows a perspective view of a main part of the cylindrical feeder 1 of the embodiment. The axis of the cylindrical feeder 1 is inclined,
It is composed of a cylindrical wall 21, a bottom end plate 26, an eccentric hole 24, a discharge passage 23, a discharge port 22 and an opening 25 for connecting to a hopper, and is rotated about its axis by a rotation motor 12 whose rotation speed is variable as shown in FIG. .
【0012】図2、図3は円筒状フィーダ1の回転時の
粒状ポリシリコンの供給機構を示すものである。図2
は、偏心孔24が最下端に、排出口22が最上端に位置
した状態を示すもので、粒状ポリシリコン2は偏心孔2
4を通って排出路23内に安息角により流入する。2 and 3 show a supply mechanism of granular polysilicon when the cylindrical feeder 1 is rotated. Figure 2
Shows the state in which the eccentric hole 24 is located at the lowermost end and the discharge port 22 is located at the uppermost end.
4 and flows into the discharge passage 23 at an angle of repose.
【0013】図3は、偏心孔24が最上端に、排出口2
2が最下端に位置した状態を示すもので、粒状ポリシリ
コン2は排出口22から排出され、一方円筒状フィーダ
1内の粒状ポリシリコン2は排出路23内に入らない。
このようにして、円筒状フィーダ1の回転に伴って一定
量の粒状ポリシリコンが排出される。半導体シリコン単
結晶の導伝型を決める不純物の投入で特にSb、Asは
原料ポリシリコン溶解後に投入する必要がある。このと
き一度に必要量全てを投入すると、不純物がシリコン溶
湯に必要量入らず、蒸発してしまう。このため、一定量
を一定時間間隔で投入することが品質の確保と引上での
単結晶の無転位化の大きな鍵となる。そこで本実施例装
置で円筒状フィーダ1の回転数を制御することによって
この投入工程の自動化を達成した。In FIG. 3, the eccentric hole 24 is at the uppermost end, and the discharge port 2
2 shows the state of being located at the lowermost end, the granular polysilicon 2 is discharged from the discharge port 22, while the granular polysilicon 2 in the cylindrical feeder 1 does not enter the discharge path 23.
In this way, a certain amount of granular polysilicon is discharged as the cylindrical feeder 1 rotates. When introducing impurities that determine the conductivity type of semiconductor silicon single crystals, especially Sb and As must be introduced after the raw material polysilicon is melted. At this time, if all of the necessary amounts are added at one time, the impurities will not enter the required amount in the molten silicon and will be evaporated. Therefore, the introduction of a fixed amount at a fixed time interval is a key to ensuring quality and dislocation-free single crystal. Therefore, by controlling the number of rotations of the cylindrical feeder 1 in the apparatus of this embodiment, the automation of this charging process was achieved.
【0014】粒状ポリシリコンの供給に対しても、図4
のようにして実施し、円筒状フィーダ1の回転数の制御
により所定の量の粒状ポリシリコンの投入を連続的に行
うことができた。また、不純物(ドーパント)や粒状ポ
リシリコンの接する面はすべて高純度石英やポリシリコ
ン等で作成したので引上げられたシリコン単結晶には通
常の引上で含まれる以上の不純物の混入はない。Also for the supply of granular polysilicon, FIG.
As described above, by controlling the rotation speed of the cylindrical feeder 1, a predetermined amount of granular polysilicon could be continuously charged. In addition, since all the surfaces in contact with impurities (dopants) and granular polysilicon are made of high-purity quartz, polysilicon, etc., the pulled silicon single crystal does not contain more impurities than are contained in ordinary pulling.
【0015】[0015]
【発明の効果】本発明の装置では構造上、供給装置の部
材同士の摩擦等による粒状ポリシリコンへの不純物の混
入が全くないので、高品質なシリコン単結晶の引上が可
能となった。また連続供給においても粒状ポリシリコン
の供給量の制御が容易でかつ精密に行うことができるよ
うになった。EFFECTS OF THE INVENTION In the apparatus of the present invention, impurities are not mixed into the granular polysilicon due to the friction between the members of the supplying apparatus and the like, so that a high quality silicon single crystal can be pulled. Further, even in the continuous supply, the supply amount of the granular polysilicon can be controlled easily and precisely.
【図1】実施例の供給装置の要部斜視図である。FIG. 1 is a perspective view of a main part of a supply device according to an embodiment.
【図2】実施例の供給装置の縦断面図である。FIG. 2 is a vertical sectional view of a supply device according to an embodiment.
【図3】実施例の供給装置の縦断面図である。FIG. 3 is a vertical cross-sectional view of a supply device according to an embodiment.
【図4】実施例の単結晶引上装置の全体図である。FIG. 4 is an overall view of a single crystal pulling apparatus of an example.
1 円筒状フィーダ 2 粒状ポリシ
リコン 3 ホッパ 4 連結部 5 供給導入管 6 加熱用ヒー
タ 7 黒鉛ルツボ 8 石英ルツボ 9 シリコン溶湯 10 密閉容器 11 真空シール 12 フィーダ回
転用モータ 21 円筒壁 22 排出口 23 排出路 24 偏心孔 25 連絡開口 26 底鏡板DESCRIPTION OF SYMBOLS 1 Cylindrical feeder 2 Granular polysilicon 3 Hopper 4 Connection part 5 Supply introduction pipe 6 Heating heater 7 Graphite crucible 8 Quartz crucible 9 Silicon melt 10 Sealed container 11 Vacuum seal 12 Feeder rotation motor 21 Cylindrical wall 22 Discharge port 23 Discharge path 24 Eccentric hole 25 Communication opening 26 Bottom plate
Claims (3)
を備えたシリコン単結晶引上装置において、供給粒状原
料を安息角で内部に滞留させる傾斜円筒からなり、底鏡
板に偏心孔を有し、軸を中心として回転する円筒状フィ
ーダと、該円筒状フィーダの回転に伴って前記偏心孔か
ら流出する粒状原料を受けてルツボ内に間欠定量排出す
る排出路とを備え、前記円筒状フィーダに回転速度変更
自在な駆動装置を備えたことを特徴とするシリコン単結
晶引上装置。1. A silicon single crystal pulling apparatus equipped with a supply device for supplying granular raw material into a crucible, comprising an inclined cylinder for retaining the supplied granular raw material inside at a repose angle, and having an eccentric hole in a bottom end plate. A cylindrical feeder that rotates about an axis, and a discharge passage that receives the granular raw material that flows out from the eccentric hole with the rotation of the cylindrical feeder and discharges it into the crucible in a fixed amount intermittently. An apparatus for pulling up a silicon single crystal, which is equipped with a drive device capable of changing a rotation speed.
の一円周以上の長さを有し、一端を前記偏心孔に結合
し、他端を開口した湾曲管であることを特徴とする請求
項1記載のシリコン単結晶引上装置。2. The discharge passage is a curved pipe having a length of a quarter circle or more along the periphery of the bottom end plate, one end of which is connected to the eccentric hole, and the other end of which is open. The silicon single crystal pulling apparatus according to claim 1, which is characterized in that.
コン又は高純度石英としたことを特徴とする請求項1記
載のシリコン単結晶引上装置。3. The silicon single crystal pulling apparatus according to claim 1, wherein the material of the cylindrical feeder is high-purity silicon or high-purity quartz.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21642593A JPH0769776A (en) | 1993-08-31 | 1993-08-31 | Equipment for pulling up silicone single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21642593A JPH0769776A (en) | 1993-08-31 | 1993-08-31 | Equipment for pulling up silicone single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0769776A true JPH0769776A (en) | 1995-03-14 |
Family
ID=16688369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21642593A Withdrawn JPH0769776A (en) | 1993-08-31 | 1993-08-31 | Equipment for pulling up silicone single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0769776A (en) |
-
1993
- 1993-08-31 JP JP21642593A patent/JPH0769776A/en not_active Withdrawn
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Legal Events
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---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001031 |