JPH03250628A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03250628A
JPH03250628A JP4538990A JP4538990A JPH03250628A JP H03250628 A JPH03250628 A JP H03250628A JP 4538990 A JP4538990 A JP 4538990A JP 4538990 A JP4538990 A JP 4538990A JP H03250628 A JPH03250628 A JP H03250628A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
layer
base
interconnection
made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4538990A
Inventor
Tetsuya Hayashida
Ikuo Yoshida
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

PURPOSE: To strengthen adhesive strength to a base material and to prevent mutual diffusion of interconnection in a base by forming at least one layer of a base layer of a multilayer structure of a titanium nitride film.
CONSTITUTION: Inner interconnection 30 and an electric insulting layer 40 are formed on a semiconductor substrate 10 through an insulating film 20 made of SiO2. Further, a contact hole is formed at the layer 40, a laminated base layer 50 made of a structure in which a TiN film 51, a Cu film 52 and an Au film 53 are sequentially laminated is then deposited, formed, and a solder bump 60 made of Pb61 and Sn62 is provided. In this case, the film 51 is deposited by a chemical vapor growing method. The film 51 is employed to increase the adhesive strength of the interconnection 30 and the layer 40 to the base material, and a salient electrode, electrode base in which mutual diffusions of the interconnection 30, the bump 60, the films 52, 53 are reduced, are realized.
COPYRIGHT: (C)1991,JPO&Japio
JP4538990A 1990-02-28 1990-02-28 Semiconductor device Pending JPH03250628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4538990A JPH03250628A (en) 1990-02-28 1990-02-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4538990A JPH03250628A (en) 1990-02-28 1990-02-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH03250628A true true JPH03250628A (en) 1991-11-08

Family

ID=12717915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4538990A Pending JPH03250628A (en) 1990-02-28 1990-02-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH03250628A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834844A (en) * 1995-03-24 1998-11-10 Shinko Electric Industries Co., Ltd. Semiconductor device having an element with circuit pattern thereon
US5903058A (en) * 1996-07-17 1999-05-11 Micron Technology, Inc. Conductive bumps on die for flip chip application
US6008543A (en) * 1995-03-09 1999-12-28 Sony Corporation Conductive bumps on pads for flip chip application
US6400018B2 (en) * 1998-08-27 2002-06-04 3M Innovative Properties Company Via plug adapter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008543A (en) * 1995-03-09 1999-12-28 Sony Corporation Conductive bumps on pads for flip chip application
US5834844A (en) * 1995-03-24 1998-11-10 Shinko Electric Industries Co., Ltd. Semiconductor device having an element with circuit pattern thereon
US5960308A (en) * 1995-03-24 1999-09-28 Shinko Electric Industries Co. Ltd. Process for making a chip sized semiconductor device
US5903058A (en) * 1996-07-17 1999-05-11 Micron Technology, Inc. Conductive bumps on die for flip chip application
US6400018B2 (en) * 1998-08-27 2002-06-04 3M Innovative Properties Company Via plug adapter

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