JPH0324785B2 - - Google Patents
Info
- Publication number
- JPH0324785B2 JPH0324785B2 JP8273983A JP8273983A JPH0324785B2 JP H0324785 B2 JPH0324785 B2 JP H0324785B2 JP 8273983 A JP8273983 A JP 8273983A JP 8273983 A JP8273983 A JP 8273983A JP H0324785 B2 JPH0324785 B2 JP H0324785B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- neutrons
- resin
- semiconductor device
- soft errors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 229910052810 boron oxide Inorganic materials 0.000 claims description 6
- 230000005260 alpha ray Effects 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000015654 memory Effects 0.000 description 11
- 229920001721 polyimide Polymers 0.000 description 7
- ZOXJGFHDIHLPTG-BJUDXGSMSA-N Boron-10 Chemical compound [10B] ZOXJGFHDIHLPTG-BJUDXGSMSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- -1 boron chelate compound Chemical class 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 4
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- ZOXJGFHDIHLPTG-IGMARMGPSA-N boron-11 atom Chemical compound [11B] ZOXJGFHDIHLPTG-IGMARMGPSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-IGMARMGPSA-N lithium-7 atom Chemical compound [7Li] WHXSMMKQMYFTQS-IGMARMGPSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8273983A JPS59208862A (ja) | 1983-05-13 | 1983-05-13 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8273983A JPS59208862A (ja) | 1983-05-13 | 1983-05-13 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59208862A JPS59208862A (ja) | 1984-11-27 |
| JPH0324785B2 true JPH0324785B2 (en, 2012) | 1991-04-04 |
Family
ID=13782780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8273983A Granted JPS59208862A (ja) | 1983-05-13 | 1983-05-13 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59208862A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019206455A (ja) * | 2018-05-30 | 2019-12-05 | 株式会社トクヤマ | 六方晶窒化ホウ素粉末及びその製造方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267504A (ja) * | 1992-03-18 | 1993-10-15 | Shin Etsu Chem Co Ltd | 樹脂組成物及びこの樹脂組成物で封止又は被覆した半導体装置 |
| JPH11354690A (ja) | 1998-06-05 | 1999-12-24 | Mitsubishi Electric Corp | 半導体装置 |
| JP2008172054A (ja) * | 2007-01-12 | 2008-07-24 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物及び半導体装置 |
| JP4973218B2 (ja) * | 2007-02-08 | 2012-07-11 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物及び半導体装置 |
| US8946663B2 (en) * | 2012-05-15 | 2015-02-03 | Spansion Llc | Soft error resistant circuitry |
| JP6320517B2 (ja) | 2013-05-16 | 2018-05-09 | ナショナル・インスティチュート・オブ・エアロスペース・アソシエイツ | 耐放射線強化した超小型電子チップのパッケージング技術 |
| EP2997595B1 (en) * | 2013-05-16 | 2020-11-18 | National Institute Of Aerospace Associates | Method of forming a radiation hardened microelectronic chip package |
-
1983
- 1983-05-13 JP JP8273983A patent/JPS59208862A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019206455A (ja) * | 2018-05-30 | 2019-12-05 | 株式会社トクヤマ | 六方晶窒化ホウ素粉末及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59208862A (ja) | 1984-11-27 |
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