JPH03236255A - Method for removing charge from electrostatic chuck - Google Patents
Method for removing charge from electrostatic chuckInfo
- Publication number
- JPH03236255A JPH03236255A JP2031555A JP3155590A JPH03236255A JP H03236255 A JPH03236255 A JP H03236255A JP 2031555 A JP2031555 A JP 2031555A JP 3155590 A JP3155590 A JP 3155590A JP H03236255 A JPH03236255 A JP H03236255A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- electrode
- voltage
- discharge tube
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は静電チャックの帯電除去方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for removing static electricity from an electrostatic chuck.
従来の技術は、例えば、特開昭６０−５５３９号公報に
記載のように、電極に負の電圧を印加する回路を付加し
て被処理物を強制的に開放脱離させ得ることとなってい
た。In conventional techniques, for example, as described in Japanese Patent Laid-Open No. 60-5539, a circuit for applying a negative voltage to an electrode is added to forcefully open and detach the object to be treated. Ta.
上記従来技術は、被処理物の離脱に電極に負電圧な印加
できる付加回路を設けているため、装置が複雑化する点
について配慮がされておらず、被処理物の離脱専用回路
を設けなければならないという間層があった。The above conventional technology requires an additional circuit that can apply a negative voltage to the electrode to remove the object, so no consideration is given to the complexity of the device, and a dedicated circuit for removing the object must be provided. There was a feeling that it had to be done.
本発明の目的は離脱専用回路等を設ける必要はなく、被
処理物の離脱を容易にすることにある。An object of the present invention is to facilitate the removal of the object to be processed without the need to provide a dedicated removal circuit.
上記目的を達成するために、プラズマを形成するマイク
ロ波と、静電チャックを行なう直流電圧のおのおのの停
止タイミングを変えたものである。In order to achieve the above object, the stopping timings of the microwave for forming plasma and the DC voltage for performing electrostatic chuck are changed.
静電チャックはマイクロ波出力の印加と同時に直流電圧
を印加することで動作する。被処理物の、例えば、エツ
チングが終了した後、［ｆＬ電圧を停止する。その後、
マイクロ波出力を停止する。それによって、電極に貼着
された誘電体膜に１積された電荷は除去されるため、被
処理物のｍ脱が容易にできる。An electrostatic chuck operates by applying a DC voltage simultaneously with the application of microwave power. After the object to be processed has been etched, for example, the fL voltage is stopped. after that,
Stop microwave output. As a result, the charge accumulated on the dielectric film attached to the electrode is removed, so that the object to be processed can be easily removed.
以下、本発明の一実施例を１＠１図および第２図により
説明する。An embodiment of the present invention will be described below with reference to FIG. 1@1 and FIG.
１１１１図で、処理室１の上部には石英製の放電管２が
設けてあり、真空処理室を形成している。処理室ｌには
、真空処理室内にエツチングガスを供給するガス供給口
３が設けてあり、また、真空処理室内部を所定圧力に減
圧・排気する真空排気装！（図示省略）につながる排気
口４が設けである。In FIG. 1111, a discharge tube 2 made of quartz is provided in the upper part of a processing chamber 1, forming a vacuum processing chamber. The processing chamber 1 is provided with a gas supply port 3 for supplying etching gas into the vacuum processing chamber, and also has a vacuum exhaust system that reduces and exhausts the inside of the vacuum processing chamber to a predetermined pressure! An exhaust port 4 (not shown) is provided.
処理室ｌ内には被エツチング材であるウェハ５を配置す
る電極６が設けである。％極６には高周波１１ｊｌｊ７
と直流％源８が接続してあり、電−６におのおの印加可
能になっている。放電管２の外側には放電管２を囲九で
導波管９が設けてあり、さらにその外側には放電管２内
に磁界を発生させるコイルｌＯが設けである。導放管９
の一部にはマイクロ波を発するマグネトロンＵが般けで
ある。An electrode 6 is provided within the processing chamber 1 on which a wafer 5, which is a material to be etched, is placed. % pole 6 has high frequency 11jlj7
and a DC% source 8 are connected, and can be applied to each of the voltages -6. A waveguide 9 is provided outside the discharge tube 2 to surround the discharge tube 2, and a coil 1O for generating a magnetic field within the discharge tube 2 is further provided outside the waveguide 9. Release pipe 9
Magnetron U, which emits microwaves, is common in some parts of the system.
このような装置では、ガス供給口３から真空処理室内に
エツチングガスな供給するとともに、真空処理室内を所
定の圧力に減圧・排気し、導波管９によってマグネトロ
ンＵからのマイクロ波を放電管２内に導入するとともに
、コイル１０によって磁界を形成し、マイクロ波の電界
とコイル１０の磁界との作用によって、放電管２内の工
呼チングガスをプラズマ化する。さらに直流電＃８によ
ってｔｍ６に直流電圧を印加し、ウェハ５を電極６に吸
着させる・エツチングが終了した後、第２図に示すよう
に直流電源出力を停止させマイクロ波のみで放電を行な
うことにより電極６に貼着された誘電体ルに蓄積された
電荷が除去できる。よってその後の被処理物の離脱が容
易になる。第２図に示すような制御は、手動、自動いず
れで行なっても良い。In such a device, etching gas is supplied into the vacuum processing chamber from the gas supply port 3, the vacuum processing chamber is depressurized and evacuated to a predetermined pressure, and microwaves from the magnetron U are transferred to the discharge tube 2 through the waveguide 9. At the same time, a magnetic field is formed by the coil 10, and the reaction gas in the discharge tube 2 is turned into plasma by the action of the microwave electric field and the magnetic field of the coil 10. Further, a DC voltage is applied to tm6 by DC voltage #8, and after the wafer 5 is attracted to the electrode 6 and etching is completed, the DC power output is stopped as shown in Fig. 2, and discharge is performed only by microwaves. Charges accumulated on the dielectric material attached to the electrode 6 can be removed. Therefore, it becomes easier to remove the object to be treated afterwards. Control as shown in FIG. 2 may be performed either manually or automatically.
なお、本実施例では、エツチング装置を例に用いたが、
本発明を適用した装置であればいずれも応用可能である
。Note that in this example, an etching device was used as an example, but
Any device to which the present invention is applied is applicable.
本発明によれば、直流電圧とマイクロ波出力の停止タイ
ミングを制御することで電極に貼着した胱電体展に蓄積
した電荷が除去され、被処理物の離脱が容易にできる効
果がある。また、電荷な除去するための新たな設備が不
要であるため、経済的である等の効果もある。According to the present invention, by controlling the stop timing of the DC voltage and the microwave output, the charge accumulated in the bladder electric body attached to the electrode is removed, and the object to be treated can be easily removed. Furthermore, since no new equipment for removing electric charge is required, there are also effects such as being economical.
第１図は本発明の一実施例のドライエツチング装置の処
理室の縦断面図、第２図は電荷を放電させるための出力
停止タイミングチャート図である。
ｌ・・・・・・処理室、２−−−−−・放電管、３・・
・・・・ガス供給口、４・・・・・・排気口、５・・・
・・・ウェハ、６−−−−−−電極、？ −−−・−高
周波電源、８・・・・・・直流電源、９・・・・・・導
波ｗ、ｉｏ−・・・・・コイル、Ｕ・・・・・・マクネ
トロン、鵞・・・・・・誘電体層FIG. 1 is a vertical sectional view of a processing chamber of a dry etching apparatus according to an embodiment of the present invention, and FIG. 2 is a timing chart for stopping output for discharging electric charges. 1...Processing chamber, 2----Discharge tube, 3...
...Gas supply port, 4...Exhaust port, 5...
...Wafer, 6------electrodes, ? --- High frequency power supply, 8... DC power supply, 9... Waveguide w, io-... Coil, U... Macnetron, Goose...・・・Dielectric layer
Claims (1)
器内に設けられた電極に直流電圧を印加できる構造より
成る処理装置において、前記マイクロ波出力、および直
流電圧の停止タイミングを制御することを特徴とする静
電チャツクの帯電除去方法。1. A processing apparatus having a plasma forming means using microwaves and having a structure capable of applying a DC voltage to an electrode provided in a vacuum container, characterized in that the microwave output and the stop timing of the DC voltage are controlled. A method for removing static electricity from an electrostatic chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2031555A JPH07109855B2 (en) | 1990-02-14 | 1990-02-14 | Electrostatic chuck electrostatic charge removal method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2031555A JPH07109855B2 (en) | 1990-02-14 | 1990-02-14 | Electrostatic chuck electrostatic charge removal method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8291462A Division JPH09186229A (en) | 1996-11-01 | 1996-11-01 | Electrostatic discharging of electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03236255A true JPH03236255A (en) | 1991-10-22 |
| JPH07109855B2 JPH07109855B2 (en) | 1995-11-22 |
Family
ID=12334432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2031555A Expired - Lifetime JPH07109855B2 (en) | 1990-02-14 | 1990-02-14 | Electrostatic chuck electrostatic charge removal method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109855B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496221A (en) * | 1990-08-03 | 1992-03-27 | Matsushita Electric Ind Co Ltd | Device and method for manufacturing semiconductor |
| US6174370B1 (en) | 1996-03-26 | 2001-01-16 | Nec Corporation | Semiconductor wafer chucking device and method for stripping semiconductor wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027520A (en) * | 1988-06-27 | 1990-01-11 | Fujitsu Ltd | Dry-etching equipment |
| JPH0239523A (en) * | 1988-07-29 | 1990-02-08 | Tokyo Electron Ltd | Method of forming film on semiconductor substrate |
| JPH02119124A (en) * | 1988-10-28 | 1990-05-07 | Seiko Epson Corp | Plasma processing equipment |
-
1990
- 1990-02-14 JP JP2031555A patent/JPH07109855B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027520A (en) * | 1988-06-27 | 1990-01-11 | Fujitsu Ltd | Dry-etching equipment |
| JPH0239523A (en) * | 1988-07-29 | 1990-02-08 | Tokyo Electron Ltd | Method of forming film on semiconductor substrate |
| JPH02119124A (en) * | 1988-10-28 | 1990-05-07 | Seiko Epson Corp | Plasma processing equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496221A (en) * | 1990-08-03 | 1992-03-27 | Matsushita Electric Ind Co Ltd | Device and method for manufacturing semiconductor |
| US6174370B1 (en) | 1996-03-26 | 2001-01-16 | Nec Corporation | Semiconductor wafer chucking device and method for stripping semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07109855B2 (en) | 1995-11-22 |
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