JPH03227556A - Dicing method - Google Patents
Dicing methodInfo
- Publication number
- JPH03227556A JPH03227556A JP2022487A JP2248790A JPH03227556A JP H03227556 A JPH03227556 A JP H03227556A JP 2022487 A JP2022487 A JP 2022487A JP 2248790 A JP2248790 A JP 2248790A JP H03227556 A JPH03227556 A JP H03227556A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling
- salt
- solute
- acid radical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000007864 aqueous solution Substances 0.000 claims abstract description 10
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 6
- 230000007935 neutral effect Effects 0.000 abstract description 6
- 230000003068 static effect Effects 0.000 abstract description 6
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract 5
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- -1 alkali metal salts Chemical class 0.000 description 2
- 235000012501 ammonium carbonate Nutrition 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体ウェハから個々の半導体チップに切り出すための
ダイシング方法に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] This invention relates to a dicing method for cutting out individual semiconductor chips from a semiconductor wafer.
冷却/洗浄に用いる水をほぼ中性に保ち電気伝導度を上
げて、水の帯電を防止でき且つアルカリ金属イオン等に
よる汚染のない方法を得ることを目的とし。The purpose of this invention is to obtain a method that can prevent water from becoming electrified by keeping water used for cooling/cleaning almost neutral and increasing its electrical conductivity, and is free from contamination by alkali metal ions.
ダイシングブレードの冷却又はウェハの切断部の洗浄に
用いる水溶液の溶質として酸基とアンモニア塩基の化合
物からなる塩を用いるように構成する。A salt made of a compound of an acid group and an ammonia base is used as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.
〔産業上の利用分野]
本発明は半導体ウェハから個々の半導体チップに切り出
すためのダイシング方法に関する。[Industrial Application Field] The present invention relates to a dicing method for cutting a semiconductor wafer into individual semiconductor chips.
ウェハプロセス終了後のウェハをダイシングブレードを
用いて切断する際、切断部に冷却水と洗浄水をノズルか
ら吹きつけて放熱と切屑の除去を行っている(第1図参
照)。この際、ノズルから出る水が帯電してウェハ上に
形成された回路素子が静電破壊を起こすので種々の対策
が行われているが1本発明はこの帯電防−止に適用でき
る。When a wafer is cut using a dicing blade after the wafer process is completed, cooling water and cleaning water are sprayed from a nozzle onto the cut portion to dissipate heat and remove chips (see Figure 1). At this time, the water discharged from the nozzle becomes electrically charged and causes electrostatic damage to circuit elements formed on the wafer, so various countermeasures have been taken, and the present invention can be applied to this prevention.
従来の帯電防止法は、ダイシングブレードに吹きつける
冷却水又は洗浄水に炭酸ガス(Cot)を溶かした水を
用いて電気伝導度を上げて帯電を防止していた。The conventional antistatic method uses water in which carbon dioxide gas (Cot) is dissolved in cooling water or cleaning water that is sprayed onto the dicing blade to increase electrical conductivity and prevent static electricity.
ところが、 CO2を混入させると水は酸性となり。However, when CO2 is mixed in, water becomes acidic.
ウェハ上に露出するアルミニウム(Aり膜等を傷めるた
めに、 CO2混入量を自由に規定することができなか
った。It was not possible to freely specify the amount of CO2 mixed in because it would damage the aluminum film exposed on the wafer.
[発明が解決しようとする課題]
従って、 CO□混入量を増やして十分な帯電防止がで
きず、ウェハ上の回路素子に静電気を注入してしまうと
いう問題を生じていた。[Problems to be Solved by the Invention] Therefore, by increasing the amount of CO□ mixed in, it is not possible to sufficiently prevent static electricity, resulting in the problem of static electricity being injected into circuit elements on the wafer.
このための対策として、特開昭63−28608号公報
に開示されている技術がある。As a countermeasure for this, there is a technique disclosed in Japanese Unexamined Patent Publication No. 63-28608.
これは、界面活性剤を炭酸水に混入して水の電気伝導度
を上げて帯電を防止するものであるが。This method involves mixing a surfactant into carbonated water to increase the electrical conductivity of the water and prevent it from becoming electrostatically charged.
界面活性剤としては炭酸水のpHをほぼ中性に調整でき
るアルカリ性の界面活性剤であればよく1例えば、脂肪
酸のアルカリ金属塩等があげられている。The surfactant may be any alkaline surfactant that can adjust the pH of carbonated water to approximately neutral. Examples include alkali metal salts of fatty acids.
この場合は、界面活性剤を用いるため界面活性剤の浸透
性がよく、従ってこれの洗浄除去が難しくなり、又、ア
ルカリ金属イオン等によるウェハの汚染が懸念される。In this case, since a surfactant is used, the permeability of the surfactant is good, making it difficult to clean and remove the surfactant, and there is also a concern that the wafer may be contaminated by alkali metal ions and the like.
本発明は冷却/洗浄に用いる水のp[(をほぼ中性に保
ち1水の十分に電気伝導度を上げて帯電を防止でき、且
つアルカリ金属イオン等による汚染の心配のないダイシ
ング方法を提供することを目的とする。The present invention provides a dicing method that can keep the water used for cooling/cleaning almost neutral, sufficiently increase the electrical conductivity of the water, and prevent charging, and without worrying about contamination with alkali metal ions. The purpose is to
上記課題の解決は、ダイシングブレードの冷却又はウェ
ハの切断部の洗浄に用いる水溶液の溶質として酸基とア
ンモニア塩基の化合物からなる塩を用いるダイシング方
法により達成される。The above problems are achieved by a dicing method that uses a salt made of a compound of an acid group and an ammonia base as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.
本発明はダイシングブレードの冷却又はウェハの切断部
の洗浄に用いる水に混入する溶質として酸基とアンモニ
ア塩基の化合物からなる塩を用いると、この塩は水溶液
をほぼ中性とし且つ噴出時に静電気を生じなくなる程度
に高い電気伝導度が得られる溶解度を有する溶質であり
、又ウェハの汚染の心配のないことを利用したものであ
る。The present invention uses a salt consisting of a compound of an acid group and an ammonia base as a solute mixed into the water used for cooling the dicing blade or cleaning the cut portion of the wafer.This salt makes the aqueous solution almost neutral and eliminates static electricity when ejected. It is a solute that has solubility that high electrical conductivity can be obtained to the extent that it does not occur, and also takes advantage of the fact that there is no risk of contaminating the wafer.
又、この塩はアルカリ金属塩等を含まないため。Also, this salt does not contain alkali metal salts.
これによるウェハ汚染の心配がない。There is no fear of wafer contamination due to this.
ここで、酸基は炭酸根等の弱酸根を用いれば。Here, if the acid group is a weak acid group such as a carbonate group.
電気分解その他何らかの原因で塩が分解して酸が生成し
たときの危険が少ない。There is less danger when salt decomposes and produces acid due to electrolysis or other causes.
又、アンモニア塩基を用いたのはpHの調節が容易で、
塩の溶解度が大きく、水溶液の濃度差が少なく、流量制
御が容易なためである。In addition, using ammonia base makes it easy to adjust the pH.
This is because the solubility of the salt is high, the difference in concentration of the aqueous solution is small, and the flow rate can be easily controlled.
第1図は本発明の一実施例を説明する斜視図である。 FIG. 1 is a perspective view illustrating an embodiment of the present invention.
図において、ダイシングブレード1は周囲に細かいダイ
ヤモンド粒をバインダ金属で固定しており、矢印のよう
に回転しなからウェハ2上を相対移動して、ウェハ2を
賽の目に切断する。In the figure, a dicing blade 1 has fine diamond grains fixed around it with a binder metal, rotates as shown by the arrow, and then moves relatively over a wafer 2 to cut the wafer 2 into dice.
この際、酸基とアンモニア塩基の化合物からなる塩とし
て9例えば炭酸アンモン(Nu41zc(hを溶かして
電気伝導度を上げた水溶液4を冷却水としてノズル3か
ら切断個所に吹きつける。At this time, an aqueous solution 4 prepared by dissolving a salt consisting of a compound of an acid group and an ammonia base, such as ammonium carbonate (Nu41zc(h) to increase the electrical conductivity, is sprayed from a nozzle 3 onto the cut portion as cooling water.
同種または異種の水溶液4′を洗浄水としてノズル3′
から切断個所に高圧で吹きつける。The nozzle 3' uses the same or different aqueous solution 4' as cleaning water.
Spray at high pressure onto the cut area.
ここで、 (NH4) zcOiの飽和濃度は100g
/100m lで、この範囲内ではこの塩はほぼ全体が
解離しているとみなせ、約10mol/ lの荷電体が
存在しており、これは1 mol/ lのKCIが約1
0Ωcmの比抵抗を有する(理科年表より引用)ことか
らもわかるように、従来COzで得ていた〜IMΩcm
の比抵抗と比べて十分に低い値である。Here, the saturation concentration of (NH4)zcOi is 100g
/100 ml, and within this range, this salt can be considered to be almost entirely dissociated, with about 10 mol/l of charged bodies present, which means that 1 mol/l of KCI is about 1
As can be seen from the fact that it has a specific resistance of 0 Ωcm (quoted from the science calendar), the ~IM Ωcm that was conventionally obtained with COz
This is a sufficiently low value compared to the specific resistance of .
これより、実施例の塩は従来例より桁違いに高い電気伝
導度を持ち、帯電防止に一層有効であることがわかる。From this, it can be seen that the salt of the example has an electrical conductivity that is orders of magnitude higher than that of the conventional example, and is more effective in preventing static electricity.
実施例では無機酸とアンモニア塩基の化合物からなる塩
として(NH4) 2CO3を用いたが、これの代わり
にCHzCOONH,に代表されるカルボン酸のアンモ
ニア基との化合物等を用いても同様の効果がある。In the examples, (NH4)2CO3 was used as a salt consisting of a compound of an inorganic acid and an ammonia base, but the same effect can be obtained by using a compound of a carboxylic acid with an ammonia group, such as CHZCOONH, instead. be.
以上説明したように本発明によれば、冷却/洗浄に用い
る水のpHをほぼ中性に保ってウェハ上のパッド部等の
AI露出部を傷めることなく、十分に電気伝導度を上げ
て帯電を防止して回路素子の静電破壊を抑制でき且つア
ルカリ金属イオン等にょるウェハの汚染の心配のないダ
イシング方法が得られた。As explained above, according to the present invention, the pH of the water used for cooling/cleaning is kept almost neutral, and the electrical conductivity is sufficiently increased to charge the exposed AI parts such as pads on the wafer without damaging them. A dicing method has been obtained which can suppress electrostatic damage to circuit elements by preventing this, and which does not have to worry about contamination of the wafer with alkali metal ions or the like.
第1圀は本発明の一実施例を説明する斜視図である。 図において。 1はダイシングブレード。 2はウェハ。 3.3′はノズル 4.4′は水溶液 【施イ列見1刺明する金峰不地図 竿2 1 霞 The first section is a perspective view illustrating an embodiment of the present invention. In fig. 1 is a dicing blade. 2 is a wafer. 3.3' is the nozzle 4.4' is an aqueous solution [Kinmine Fumap to be embroidered in one row] Rod 2 1 Kasumi
Claims (1)
用いる水溶液の溶質として、酸基とアンモニア塩基の化
合物からなる塩を用いることを特徴とするダイシング方
法。A dicing method characterized in that a salt consisting of a compound of an acid group and an ammonia base is used as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022487A JPH03227556A (en) | 1990-02-01 | 1990-02-01 | Dicing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022487A JPH03227556A (en) | 1990-02-01 | 1990-02-01 | Dicing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03227556A true JPH03227556A (en) | 1991-10-08 |
Family
ID=12084087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022487A Pending JPH03227556A (en) | 1990-02-01 | 1990-02-01 | Dicing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03227556A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
US5632667A (en) * | 1995-06-29 | 1997-05-27 | Delco Electronics Corporation | No coat backside wafer grinding process |
JP2012019219A (en) * | 2010-07-09 | 2012-01-26 | Air Products & Chemicals Inc | Method for wafer dicing and composition useful for dicing method |
KR20150016448A (en) | 2013-08-02 | 2015-02-12 | 동우 화인켐 주식회사 | Cleaning solution composition for dicing a wafer |
-
1990
- 1990-02-01 JP JP2022487A patent/JPH03227556A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
US5632667A (en) * | 1995-06-29 | 1997-05-27 | Delco Electronics Corporation | No coat backside wafer grinding process |
JP2012019219A (en) * | 2010-07-09 | 2012-01-26 | Air Products & Chemicals Inc | Method for wafer dicing and composition useful for dicing method |
KR20150016448A (en) | 2013-08-02 | 2015-02-12 | 동우 화인켐 주식회사 | Cleaning solution composition for dicing a wafer |
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