JPH03227556A - Dicing method - Google Patents

Dicing method

Info

Publication number
JPH03227556A
JPH03227556A JP2022487A JP2248790A JPH03227556A JP H03227556 A JPH03227556 A JP H03227556A JP 2022487 A JP2022487 A JP 2022487A JP 2248790 A JP2248790 A JP 2248790A JP H03227556 A JPH03227556 A JP H03227556A
Authority
JP
Japan
Prior art keywords
wafer
cooling
salt
solute
acid radical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022487A
Other languages
Japanese (ja)
Inventor
Masayoshi Omura
昌良 大村
Yoshiharu Watanabe
喜治 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2022487A priority Critical patent/JPH03227556A/en
Publication of JPH03227556A publication Critical patent/JPH03227556A/en
Pending legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE:To prevent charge and contamination be using a salt of a compound of acid radical and ammonia acid radical as a solute of aqueous solution used for cooling dicing blade or cooling a cut section of a wafer. CONSTITUTION:A salt of a compound of acid radical and ammonia acid radical is used as a solute to be mixed into water 4 and 4' for cooling a dicing blade 1 or cooling a cut section of a wafer 2. The salt used herein can make aqueous solution 4 and 4' substantially neutral and is a solute capable of providing a high electric conductance which does not produce static electricity during ejection and does not contaminate wafers. This construction makes it possible to protect an Al exposed part on the wafer from damage, increase electric conductance to a satisfactory extent, prevent charge, inhibit electrostatic breakdown, and prevent the contamination of wafers produced by alkali metal ions.

Description

【発明の詳細な説明】 〔概要〕 半導体ウェハから個々の半導体チップに切り出すための
ダイシング方法に関し。
DETAILED DESCRIPTION OF THE INVENTION [Summary] This invention relates to a dicing method for cutting out individual semiconductor chips from a semiconductor wafer.

冷却/洗浄に用いる水をほぼ中性に保ち電気伝導度を上
げて、水の帯電を防止でき且つアルカリ金属イオン等に
よる汚染のない方法を得ることを目的とし。
The purpose of this invention is to obtain a method that can prevent water from becoming electrified by keeping water used for cooling/cleaning almost neutral and increasing its electrical conductivity, and is free from contamination by alkali metal ions.

ダイシングブレードの冷却又はウェハの切断部の洗浄に
用いる水溶液の溶質として酸基とアンモニア塩基の化合
物からなる塩を用いるように構成する。
A salt made of a compound of an acid group and an ammonia base is used as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.

〔産業上の利用分野] 本発明は半導体ウェハから個々の半導体チップに切り出
すためのダイシング方法に関する。
[Industrial Application Field] The present invention relates to a dicing method for cutting a semiconductor wafer into individual semiconductor chips.

ウェハプロセス終了後のウェハをダイシングブレードを
用いて切断する際、切断部に冷却水と洗浄水をノズルか
ら吹きつけて放熱と切屑の除去を行っている(第1図参
照)。この際、ノズルから出る水が帯電してウェハ上に
形成された回路素子が静電破壊を起こすので種々の対策
が行われているが1本発明はこの帯電防−止に適用でき
る。
When a wafer is cut using a dicing blade after the wafer process is completed, cooling water and cleaning water are sprayed from a nozzle onto the cut portion to dissipate heat and remove chips (see Figure 1). At this time, the water discharged from the nozzle becomes electrically charged and causes electrostatic damage to circuit elements formed on the wafer, so various countermeasures have been taken, and the present invention can be applied to this prevention.

〔従来の技術〕[Conventional technology]

従来の帯電防止法は、ダイシングブレードに吹きつける
冷却水又は洗浄水に炭酸ガス(Cot)を溶かした水を
用いて電気伝導度を上げて帯電を防止していた。
The conventional antistatic method uses water in which carbon dioxide gas (Cot) is dissolved in cooling water or cleaning water that is sprayed onto the dicing blade to increase electrical conductivity and prevent static electricity.

ところが、 CO2を混入させると水は酸性となり。However, when CO2 is mixed in, water becomes acidic.

ウェハ上に露出するアルミニウム(Aり膜等を傷めるた
めに、 CO2混入量を自由に規定することができなか
った。
It was not possible to freely specify the amount of CO2 mixed in because it would damage the aluminum film exposed on the wafer.

[発明が解決しようとする課題] 従って、 CO□混入量を増やして十分な帯電防止がで
きず、ウェハ上の回路素子に静電気を注入してしまうと
いう問題を生じていた。
[Problems to be Solved by the Invention] Therefore, by increasing the amount of CO□ mixed in, it is not possible to sufficiently prevent static electricity, resulting in the problem of static electricity being injected into circuit elements on the wafer.

このための対策として、特開昭63−28608号公報
に開示されている技術がある。
As a countermeasure for this, there is a technique disclosed in Japanese Unexamined Patent Publication No. 63-28608.

これは、界面活性剤を炭酸水に混入して水の電気伝導度
を上げて帯電を防止するものであるが。
This method involves mixing a surfactant into carbonated water to increase the electrical conductivity of the water and prevent it from becoming electrostatically charged.

界面活性剤としては炭酸水のpHをほぼ中性に調整でき
るアルカリ性の界面活性剤であればよく1例えば、脂肪
酸のアルカリ金属塩等があげられている。
The surfactant may be any alkaline surfactant that can adjust the pH of carbonated water to approximately neutral. Examples include alkali metal salts of fatty acids.

この場合は、界面活性剤を用いるため界面活性剤の浸透
性がよく、従ってこれの洗浄除去が難しくなり、又、ア
ルカリ金属イオン等によるウェハの汚染が懸念される。
In this case, since a surfactant is used, the permeability of the surfactant is good, making it difficult to clean and remove the surfactant, and there is also a concern that the wafer may be contaminated by alkali metal ions and the like.

本発明は冷却/洗浄に用いる水のp[(をほぼ中性に保
ち1水の十分に電気伝導度を上げて帯電を防止でき、且
つアルカリ金属イオン等による汚染の心配のないダイシ
ング方法を提供することを目的とする。
The present invention provides a dicing method that can keep the water used for cooling/cleaning almost neutral, sufficiently increase the electrical conductivity of the water, and prevent charging, and without worrying about contamination with alkali metal ions. The purpose is to

〔課題を解決するための手段〕[Means to solve the problem]

上記課題の解決は、ダイシングブレードの冷却又はウェ
ハの切断部の洗浄に用いる水溶液の溶質として酸基とア
ンモニア塩基の化合物からなる塩を用いるダイシング方
法により達成される。
The above problems are achieved by a dicing method that uses a salt made of a compound of an acid group and an ammonia base as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.

〔作用〕[Effect]

本発明はダイシングブレードの冷却又はウェハの切断部
の洗浄に用いる水に混入する溶質として酸基とアンモニ
ア塩基の化合物からなる塩を用いると、この塩は水溶液
をほぼ中性とし且つ噴出時に静電気を生じなくなる程度
に高い電気伝導度が得られる溶解度を有する溶質であり
、又ウェハの汚染の心配のないことを利用したものであ
る。
The present invention uses a salt consisting of a compound of an acid group and an ammonia base as a solute mixed into the water used for cooling the dicing blade or cleaning the cut portion of the wafer.This salt makes the aqueous solution almost neutral and eliminates static electricity when ejected. It is a solute that has solubility that high electrical conductivity can be obtained to the extent that it does not occur, and also takes advantage of the fact that there is no risk of contaminating the wafer.

又、この塩はアルカリ金属塩等を含まないため。Also, this salt does not contain alkali metal salts.

これによるウェハ汚染の心配がない。There is no fear of wafer contamination due to this.

ここで、酸基は炭酸根等の弱酸根を用いれば。Here, if the acid group is a weak acid group such as a carbonate group.

電気分解その他何らかの原因で塩が分解して酸が生成し
たときの危険が少ない。
There is less danger when salt decomposes and produces acid due to electrolysis or other causes.

又、アンモニア塩基を用いたのはpHの調節が容易で、
塩の溶解度が大きく、水溶液の濃度差が少なく、流量制
御が容易なためである。
In addition, using ammonia base makes it easy to adjust the pH.
This is because the solubility of the salt is high, the difference in concentration of the aqueous solution is small, and the flow rate can be easily controlled.

〔実施例〕〔Example〕

第1図は本発明の一実施例を説明する斜視図である。 FIG. 1 is a perspective view illustrating an embodiment of the present invention.

図において、ダイシングブレード1は周囲に細かいダイ
ヤモンド粒をバインダ金属で固定しており、矢印のよう
に回転しなからウェハ2上を相対移動して、ウェハ2を
賽の目に切断する。
In the figure, a dicing blade 1 has fine diamond grains fixed around it with a binder metal, rotates as shown by the arrow, and then moves relatively over a wafer 2 to cut the wafer 2 into dice.

この際、酸基とアンモニア塩基の化合物からなる塩とし
て9例えば炭酸アンモン(Nu41zc(hを溶かして
電気伝導度を上げた水溶液4を冷却水としてノズル3か
ら切断個所に吹きつける。
At this time, an aqueous solution 4 prepared by dissolving a salt consisting of a compound of an acid group and an ammonia base, such as ammonium carbonate (Nu41zc(h) to increase the electrical conductivity, is sprayed from a nozzle 3 onto the cut portion as cooling water.

同種または異種の水溶液4′を洗浄水としてノズル3′
から切断個所に高圧で吹きつける。
The nozzle 3' uses the same or different aqueous solution 4' as cleaning water.
Spray at high pressure onto the cut area.

ここで、 (NH4) zcOiの飽和濃度は100g
/100m lで、この範囲内ではこの塩はほぼ全体が
解離しているとみなせ、約10mol/ lの荷電体が
存在しており、これは1 mol/ lのKCIが約1
0Ωcmの比抵抗を有する(理科年表より引用)ことか
らもわかるように、従来COzで得ていた〜IMΩcm
の比抵抗と比べて十分に低い値である。
Here, the saturation concentration of (NH4)zcOi is 100g
/100 ml, and within this range, this salt can be considered to be almost entirely dissociated, with about 10 mol/l of charged bodies present, which means that 1 mol/l of KCI is about 1
As can be seen from the fact that it has a specific resistance of 0 Ωcm (quoted from the science calendar), the ~IM Ωcm that was conventionally obtained with COz
This is a sufficiently low value compared to the specific resistance of .

これより、実施例の塩は従来例より桁違いに高い電気伝
導度を持ち、帯電防止に一層有効であることがわかる。
From this, it can be seen that the salt of the example has an electrical conductivity that is orders of magnitude higher than that of the conventional example, and is more effective in preventing static electricity.

実施例では無機酸とアンモニア塩基の化合物からなる塩
として(NH4) 2CO3を用いたが、これの代わり
にCHzCOONH,に代表されるカルボン酸のアンモ
ニア基との化合物等を用いても同様の効果がある。
In the examples, (NH4)2CO3 was used as a salt consisting of a compound of an inorganic acid and an ammonia base, but the same effect can be obtained by using a compound of a carboxylic acid with an ammonia group, such as CHZCOONH, instead. be.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、冷却/洗浄に用い
る水のpHをほぼ中性に保ってウェハ上のパッド部等の
AI露出部を傷めることなく、十分に電気伝導度を上げ
て帯電を防止して回路素子の静電破壊を抑制でき且つア
ルカリ金属イオン等にょるウェハの汚染の心配のないダ
イシング方法が得られた。
As explained above, according to the present invention, the pH of the water used for cooling/cleaning is kept almost neutral, and the electrical conductivity is sufficiently increased to charge the exposed AI parts such as pads on the wafer without damaging them. A dicing method has been obtained which can suppress electrostatic damage to circuit elements by preventing this, and which does not have to worry about contamination of the wafer with alkali metal ions or the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1圀は本発明の一実施例を説明する斜視図である。 図において。 1はダイシングブレード。 2はウェハ。 3.3′はノズル 4.4′は水溶液 【施イ列見1刺明する金峰不地図 竿2 1  霞 The first section is a perspective view illustrating an embodiment of the present invention. In fig. 1 is a dicing blade. 2 is a wafer. 3.3' is the nozzle 4.4' is an aqueous solution [Kinmine Fumap to be embroidered in one row] Rod 2 1 Kasumi

Claims (1)

【特許請求の範囲】[Claims] ダイシングブレードの冷却又はウェハの切断部の洗浄に
用いる水溶液の溶質として、酸基とアンモニア塩基の化
合物からなる塩を用いることを特徴とするダイシング方
法。
A dicing method characterized in that a salt consisting of a compound of an acid group and an ammonia base is used as a solute in an aqueous solution used for cooling a dicing blade or cleaning a cut portion of a wafer.
JP2022487A 1990-02-01 1990-02-01 Dicing method Pending JPH03227556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022487A JPH03227556A (en) 1990-02-01 1990-02-01 Dicing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022487A JPH03227556A (en) 1990-02-01 1990-02-01 Dicing method

Publications (1)

Publication Number Publication Date
JPH03227556A true JPH03227556A (en) 1991-10-08

Family

ID=12084087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022487A Pending JPH03227556A (en) 1990-02-01 1990-02-01 Dicing method

Country Status (1)

Country Link
JP (1) JPH03227556A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461008A (en) * 1994-05-26 1995-10-24 Delco Electronics Corporatinon Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
JP2012019219A (en) * 2010-07-09 2012-01-26 Air Products & Chemicals Inc Method for wafer dicing and composition useful for dicing method
KR20150016448A (en) 2013-08-02 2015-02-12 동우 화인켐 주식회사 Cleaning solution composition for dicing a wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461008A (en) * 1994-05-26 1995-10-24 Delco Electronics Corporatinon Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
JP2012019219A (en) * 2010-07-09 2012-01-26 Air Products & Chemicals Inc Method for wafer dicing and composition useful for dicing method
KR20150016448A (en) 2013-08-02 2015-02-12 동우 화인켐 주식회사 Cleaning solution composition for dicing a wafer

Similar Documents

Publication Publication Date Title
EP2404989B1 (en) Method for wafer dicing
MY124691A (en) Method of polishing a silicon wafer using a polishing composition and a surface treating composition
KR20050071677A (en) Polishing composition and rinsing composition
JP3219020B2 (en) Cleaning agent
US20030158059A1 (en) Detergent composition
US20090056744A1 (en) Wafer cleaning compositions and methods
JPH08187475A (en) Method of removing metal in scrubber
US7855130B2 (en) Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
JPH03227556A (en) Dicing method
CA2200615C (en) Stainless steel alkali treatment
US20070232511A1 (en) Cleaning solutions including preservative compounds for post CMP cleaning processes
JPH03149183A (en) Method for cutting semiconductor substrate
JPS6328608A (en) Dicing device
JPH04348033A (en) Oxide film forming method and its equipment
JP2008218664A (en) Dicing method of semiconductor wafer
KR101399840B1 (en) Method of cleaning substrate after cmp process and apparatus using same
JPS6015151B2 (en) How to cut semiconductor chips
JPS6331927Y2 (en)
JPH03235350A (en) Dicing device for semiconductor device substrate
JPH07254581A (en) New method and agent for surface treatment
JP3190221B2 (en) Cleaning method for fine particles on the surface of precision parts
JP2015109349A (en) Processing method of package wafer
JPS6314038B2 (en)
JPH0852443A (en) Cleaning method using ultrapure water
EP0818809A2 (en) Method of washing semiconductor wafers