JPS6015151B2 - How to cut semiconductor chips - Google Patents
How to cut semiconductor chipsInfo
- Publication number
- JPS6015151B2 JPS6015151B2 JP55030528A JP3052880A JPS6015151B2 JP S6015151 B2 JPS6015151 B2 JP S6015151B2 JP 55030528 A JP55030528 A JP 55030528A JP 3052880 A JP3052880 A JP 3052880A JP S6015151 B2 JPS6015151 B2 JP S6015151B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cutting
- cutting blade
- semiconductor chips
- blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Description
【発明の詳細な説明】
本発明は、パターンニングされた半導体ウェハを所定形
状のべレットに切断する半導体チップの切断方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor chip cutting method for cutting a patterned semiconductor wafer into pellets of a predetermined shape.
従来、パターンニングされた半導体ウェハは、プレード
ダィサーに設けられた厚さ数十ミクロンの円板状の切削
刃を高速回転させながら所定形状のべレツトに切断され
ている。Conventionally, a patterned semiconductor wafer is cut into pellets of a predetermined shape by rotating a disk-shaped cutting blade several tens of microns thick provided on a blade dicer at high speed.
而して、切削刃に冷却水を噴射せしめて切削刃の冷却と
切削に伴う肩の除去を行なっている。Cooling water is injected onto the cutting blade to cool the cutting blade and remove shoulders associated with cutting.
冷却水は、半導体ゥェハに形成された素子に悪影響を与
えないように金属イオンを含有しない純水が使用されて
いる。しかしながら、パターンニングされた半導体ウェ
ハの表面を直接切削刃で切削すると、切削刃の高速回転
に伴って発生する静電気や半導体ウェハに形成された素
子のジャンクション等にできる熱電池の電気によって切
削暦が半導体ウヱハに付着して汚染する。Pure water that does not contain metal ions is used as the cooling water so as not to adversely affect the elements formed on the semiconductor wafer. However, when the surface of a patterned semiconductor wafer is directly cut with a cutting blade, the cutting process is delayed due to static electricity generated due to the high-speed rotation of the cutting blade and electricity from thermal batteries generated at the junctions of elements formed on the semiconductor wafer. It adheres to semiconductor wafers and contaminates them.
このため吸着した切削屑を除去する作業が必要であった
。この問題を解消するため、予め半導体ゥヱハの表面に
ヱポキシ樹脂等を被着したものを切削刃で切断すること
が行なわれているが、樹脂の被着工程が必要であるとと
もに、切断後に不要な樹脂を剥離する工程が必要となり
、極めて作業性が悪い欠点があった。Therefore, it was necessary to remove the adsorbed cutting debris. In order to solve this problem, the surface of the semiconductor chip is coated with epoxy resin or the like in advance and then cut with a cutting blade. A process of peeling off the resin is required, which has the drawback of extremely poor workability.
本発明は、かかる点に鑑みてなされたものであり、半導
体ウェハの表面を直接切削してしかも切削屑が半導体ゥ
ェハの表面に付着するのを防止することができる半導体
チップの切断方法を見出したものである。The present invention has been made in view of these points, and has found a method for cutting semiconductor chips that can directly cut the surface of a semiconductor wafer and prevent cutting debris from adhering to the surface of the semiconductor wafer. It is something.
以下、本発明の実施例について説明する。Examples of the present invention will be described below.
図に示す如く、架台１に所定のパターンが形成された半
導体ウェハ２を固着し、架台１の上方に設けられたプレ
ードダィサー３の切削刃３ａを高速回転せしめて、切削
刃３ａに噴射ノズル４から導亀性流体５を吹付けながら
半導体ウェハ２の表面に所定形状のパレットを切断する
ためのダィシングラィン６を形成する。As shown in the figure, a semiconductor wafer 2 on which a predetermined pattern has been formed is fixed on a pedestal 1, and a cutting blade 3a of a blade dicer 3 provided above the pedestal 1 is rotated at high speed, and a jet nozzle 4 is ejected from the cutting blade 3a. Dicing lines 6 for cutting pallets of predetermined shapes are formed on the surface of the semiconductor wafer 2 while spraying the tortoise-conducting fluid 5.
ここで、噴射ノズル４から噴射する導電性流体５として
は、半導体ゥェハ２に形成された素子に悪影響を与えな
いよう隼こ比抵抗が１０〜１００ｋＱ仇、導鰭率が１０
〜１００ム○の炭酸水または水蒸気炭酸ガスの混合ガス
体等を使用する。Here, the conductive fluid 5 injected from the injection nozzle 4 has a specific resistance of 10 to 100 kQ and a conductive fin ratio of 10 to 100 kQ so as not to adversely affect the elements formed on the semiconductor wafer 2.
~100 ml of carbonated water or a mixed gas of steam and carbon dioxide is used.
炭酸水は、・純水に炭酸ガスをバブリングさせたもので
金属イオンの含有しないものを使用する。導電性流体５
の噴出圧は、４〜６ｋｇ／仇とし、高圧空気によって加
速する場合には、４〜６ｋ９ノ塊の高圧空気により噴出
ノズル４から導電性流体を引出すようになる。Use carbonated water that is made by bubbling carbon dioxide gas into pure water and does not contain metal ions. Conductive fluid 5
The ejection pressure is set to 4 to 6 kg/kg, and when the high pressure air is used for acceleration, the conductive fluid is drawn out from the ejection nozzle 4 by 4 to 6k9 blocks of high pressure air.
切削刃３ａの回転速度は、約３０００仇．ｐ．ｍ．に設
定するのが望ましい。The rotational speed of the cutting blade 3a is approximately 3000 m. p. m. It is desirable to set it to .
このように本発明に係る半導体チップの切断方法によれ
ば、半導体ウェハに形成された素子に悪影響を与えない
程度の導電性を有する導電性流体によって切削刃を冷却
させながら切削肩を洗い流すようにしたので、半導体ゥ
ェハの表面に樹脂を付着する工程を不要とし、しかも切
削肩が半導体ウヱハに付着するのを防止して作業性向上
させることができる等顕著な効果を有するものである。As described above, according to the semiconductor chip cutting method according to the present invention, the cutting shoulder is washed away while cooling the cutting blade with a conductive fluid that has conductivity to the extent that it does not adversely affect the elements formed on the semiconductor wafer. Therefore, the process of attaching resin to the surface of the semiconductor wafer is not necessary, and it has remarkable effects such as being able to prevent the cutting shoulder from adhering to the semiconductor wafer and improve workability.
図面の簡単な説明図は、本発明の一実施例の断面図であ
る。The simplified illustration of the drawing is a cross-sectional view of one embodiment of the invention.
１・・・架台、２・・・半導体ウェハ、３・・・プレー
ドダィサ、４・・・噴射ノズル、５・・・導電性流体、
６・・・ダイシングライン。DESCRIPTION OF SYMBOLS 1... Frame, 2... Semiconductor wafer, 3... Plaid dicer, 4... Spray nozzle, 5... Conductive fluid,
6...Dicing line.
Claims (1)
ードダイサの切削刃に金属イオンを含有しない導電性流
体を噴射して冷却しながら前記半導体ウエハを所定形状
のペレツトに切断せしめることを特徴とする半導体チツ
プの切断方法。1. A semiconductor chip characterized in that a conductive fluid containing no metal ions is injected onto the cutting blade of a blade dicer that cuts a patterned semiconductor wafer to cut the semiconductor wafer into pellets of a predetermined shape while cooling the semiconductor wafer. Cutting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55030528A JPS6015151B2 (en) | 1980-03-11 | 1980-03-11 | How to cut semiconductor chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55030528A JPS6015151B2 (en) | 1980-03-11 | 1980-03-11 | How to cut semiconductor chips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56126938A JPS56126938A (en) | 1981-10-05 |
| JPS6015151B2 true JPS6015151B2 (en) | 1985-04-17 |
Family
ID=12306296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55030528A Expired JPS6015151B2 (en) | 1980-03-11 | 1980-03-11 | How to cut semiconductor chips |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6015151B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH049711U (en) * | 1990-05-16 | 1992-01-28 | ||
| US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
| US5632667A (en) * | 1995-06-29 | 1997-05-27 | Delco Electronics Corporation | No coat backside wafer grinding process |
| CN106684004B (en) * | 2016-07-18 | 2019-07-05 | 浙江益中智能电气有限公司 | A kind of overall package method of power device |
| CN105957835B (en) * | 2016-07-18 | 2018-10-26 | 浙江益中智能电气有限公司 | A kind of cutting method of chip |
| WO2022201531A1 (en) * | 2021-03-26 | 2022-09-29 | 昭和電工マテリアルズ株式会社 | Semiconductor device production method, cleaning device, cleaning method, and semiconductor device |
-
1980
- 1980-03-11 JP JP55030528A patent/JPS6015151B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56126938A (en) | 1981-10-05 |
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