KR101399840B1 - Method of cleaning substrate after cmp process and apparatus using same - Google Patents

Abstract

The present invention relates to a method of cleaning a substrate after a chemical mechanical polishing (CMP) process and cleaning apparatus of substrates. The method comprises the following steps: transmitting polishing information of a polishing process which performs a CMP process of a substrate to a cleaning apparatus; and cleaning the substrate while spraying de-ionized water with cleaning brush of the cleaning apparatus when the polishing information, notifying that the CMP process is stopped before the CMP process of substrate is completed, is transmitted to the cleaning apparatus. If the CMP process is stopped abnormally and the substrate escapes from the carrier head during the CMP process, the amount of foreign materials on the substrate is much larger than that of foreign materials in a normal stop, thus, the cleaning brush is used to spray de-ionized water to remove the foreign materials, so that the cleaning state can be maintained since foreign materials will be hardly found in the cleaning brush. Therefore, if the substrate is not damaged by foreign materials which might be applied on the cleaning brush, the substrate can be always cleaned by the substrate cleaning apparatus.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning method for cleaning a substrate through a chemical mechanical polishing process,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning method that has been subjected to a chemical mechanical polishing process and a substrate cleaning apparatus used therein, and more particularly, to a substrate cleaning method that cleans a substrate subjected to a chemical mechanical polishing process without damage and a substrate cleaning apparatus using the same.

Generally, a semiconductor package is formed in a plurality of patterns at a time by forming a plurality of patterns on a substrate such as a wafer. During the manufacturing process of the semiconductor package, a chemical mechanical polishing (CMP) process for flattening the surface of a substrate such as a wafer is carried out (S10).

The chemical mechanical polishing process is a process in which a substrate such as a wafer is pressed onto a polishing platen while rotating the substrate and the polishing platen to perform mechanical polishing, and simultaneously, slurry is supplied to the substrate to perform chemical polishing. The surface of the substrate is flattened through the chemical mechanical polishing process, but the substrate with the slurry and the abrasive particles subjected to the chemical mechanical process becomes contaminated.

Therefore, the step of finishing the chemical mechanical process may include a step of removing particles such as slurry adhering to the substrate while supplying pure water to the polishing pad, or a step of immersing the substrate subjected to the chemical mechanical process in a wetting bath, After the step of removing particles such as slurry, the substrate cleaning apparatus 1 shown in Fig. 1 is subjected to a cleaning step (S20).

That is, when the substrate S subjected to the chemical mechanical process is transferred to the transfer means 20 along the predetermined path 77 in the cleaning chamber 50, the cleaning liquid 40a is transferred from the cleaning liquid ejection opening 40 to the substrate S A pair of cleaning brushes 10 are rotated while contacting both surfaces of the substrate S to clean the surface of the substrate S. [

When the chemical mechanical polishing step S10 is normally performed, the substrate processing steps S10 and S20 are performed without any hindrance to the cleaning step S20. However, when an error occurs when the substrate is separated from the carrier head that presses the substrate S during the chemical mechanical polishing step S10, the substrate S entering the cleaning step S20 is in a state containing many foreign substances So that a large amount of abrasive grains or foreign substances such as slurry are deposited on the cleaning brush 10 for carrying out the cleaning step S20.

Since the cleaning brush 10 is formed of a sponge material capable of staying in the liquid to clean the substrate S, the foreign matter transferred from the substrate S to the cleaning brush 10 can be easily separated from the cleaning brush 10 The substrate to be cleaned after that will cause problems such as scratching the foreign matter. Conventionally, cleaning of the cleaning brush 10 is performed by immersing the cleaning brush 10 in pure water. However, there is a problem that the foreign matter adsorbed on the cleaning brush 10 does not fall off by the cleaning of the cleaning brush 10.

Accordingly, a method of keeping the cleaning brush 10 clean is being searched for cleaning the substrate S cleanly and without damage.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate cleaning method for cleanly cleaning a substrate subjected to a chemical mechanical polishing process without damaging it, and a substrate cleaning apparatus using the same.

That is, according to the present invention, when an error occurs during the chemical mechanical polishing process, a large amount of foreign matter adhering to the cleaning brush is immediately removed during cleaning of a substrate on which many foreign substances are present compared with a normal case, To prevent damage such as scratches, and to ensure that the cleaning is always constantly performed.

According to an aspect of the present invention, there is provided a cleaning method for cleaning a substrate subjected to a chemical mechanical polishing process, the cleaning method comprising: transferring polishing process information in a polishing process for performing the chemical mechanical polishing process on the substrate to a cleaning device; An abrasive information transmitting step; Wherein when the polishing process information indicating that the chemical mechanical polishing process is stopped before the chemical mechanical polishing process is completed is transmitted to the cleaning device, pure water (De-Ionized Water) is sprayed onto the cleaning brush of the cleaning device, A cleaning step for cleaning; The substrate cleaning method comprising the steps of:

This is because when the chemical mechanical process is not terminated normally and the substrate is stopped due to the deviation of the substrate from the carrier head during the chemical mechanical polishing process or the like, the amount of the foreign substance on the substrate is much larger This makes it possible to clean the substrate without scratching or cleaning it less cleanly, without damaging the substrate, due to the foreign matter adhering to the cleaning brush, irrespective of the error of the chemical mechanical polishing process, by directly spraying the cleaning brush with the foreign substance So that the substrate can be cleaned.

That is, the present invention detects the amount of foreign matter adhering to the cleaning brush from the end state of the chemical mechanical polishing process, and when the chemical mechanical polishing process is not completed and the middle portion is stopped and a large amount of foreign matter is adsorbed to the cleaning brush, The foreign matter is removed from the cleaning brush by spraying a large amount of pure water per unit time at a high water pressure in the form of a jet over the entire width of the brush, and when the chemical mechanical process is normally completed, pure water is not sprayed to the cleaning brush, So that it is possible to maintain a state in which foreign matter is always removed from the cleaning brush while maintaining a small amount of use of pure water.

Wherein the pure water is injected toward the cleaned area of the substrate to remove the foreign matter from the cleaning brush by pure water which is injected at a high pressure all at once, So that the cleaning of the substrate is prevented from being contaminated by the foreign substances that fall off.

At this time, the pure water is injected at a high pressure at an angle of 0 to 30 degrees with respect to the tangential direction of the cleaning brush, so that it is preferable not to wet the cleaning brush, but to maximize the force for separating the foreign substances adhered to the surface from the cleaning brush Do. For example, the pure water is sprayed over the entire width of the cleaning brush (in a direction perpendicular to the plane of the cleaning brush cross section shown in the figure) in a jet method which is advantageous for jetting at a high pressure, It is possible to effectively remove the foreign matter on the surface.

On the other hand, even when the chemical mechanical polishing process is normally completed, a configuration in which pure water is sprayed to the cleaning brush may be included. However, it is preferable that the pure water of higher water pressure is injected into the cleaning brush only when the chemical mechanical polishing process is not terminated normally and abnormally stopped during the process. This is because, when the chemical mechanical polishing process is normally terminated, the amount of foreign matter adhering to the cleaning brush is small, and therefore, when an excessive amount of pure water is sprayed to the cleaning brush at a high pressure, the amount of pure water is unnecessarily increased, And if the water pressure of the sprayed pure water is kept high continuously, it will shorten the life of the cleaning brush of a material similar to a sponge.

Therefore, when the polishing process information indicating that the chemical mechanical polishing process is abnormally stopped is transmitted to the cleaning device, the cleaning process is performed such that the polishing process information indicating that the chemical mechanical polishing process is normally completed is transmitted to the cleaning device, It is preferable to inject a greater amount of pure water to the cleaning brush of the washing machine with a higher water pressure. For example, when the chemical mechanical polishing process is stopped abnormally, the injection flow rate per unit time of the pure water injected is twice or more than the injection flow rate per unit time of the pure water injected when the chemical mechanical polishing process is normally terminated Respectively.

Meanwhile, the method of cleaning a substrate according to the present invention may further include the step of supplying pure water to the cleaning brush in a spray form while the cleaning step is finished and the substrate is not supplied to the cleaning brush; In addition, the moisture content of the cleaning brush in the atmospheric step and the cleaning step is kept constant, thereby eliminating the problem that the cleaning of the substrate becomes uneven due to the moisture contained in the cleaning brush at the time when the substrate starts to be cleaned can do.

According to another aspect of the present invention, there is provided a cleaning apparatus for cleaning a substrate subjected to a chemical mechanical polishing process, comprising: a cleaning brush for cleaning a surface of a substrate in contact with a substrate; An abrasive process information receiving unit for receiving the abrasive process information on the substrate in the chemical mechanical polishing process; Wherein when polishing process information indicating that the chemical mechanical polishing process is stopped before the chemical mechanical polishing process is completed is received by the polishing process information receiving unit, pure water is sprayed over the entire width of the cleaning brush during the cleaning process of the substrate Pure injection part; The substrate cleaning apparatus according to claim 1,

The pure water injector is formed to inject the pure water at a high pressure toward the region where the substrate is not cleaned. For example, the pure water injector injects pure water by a nozzle jet method.

At this time, the pure water is injected under high pressure at an angle of 0 degree to 30 degrees with respect to the tangential direction of the cleaning brush, so that the foreign matter on the cleaning brush can be removed more intensively.

Even if the polishing process information receiving unit receives the polishing process information indicating that the chemical mechanical polishing process has been completed normally before the substrate is finished with the chemical mechanical polishing process, the pure water jetting unit may spray pure water onto the cleaning brush, And may be configured to clean the substrate.

In the case where the polishing process information receiving unit receives the polishing process information indicating that the chemical mechanical polishing process has been stopped before the substrate finishes the chemical mechanical polishing process, the pure water injecting unit may perform the chemical mechanical polishing process, It is effective to clean the substrate while injecting more pure water at a higher pressure per unit time from the pure water spraying unit than when the polishing process information is received by the polishing process information receiving unit.

On the other hand, the cleaning brush is formed of a material which floats the liquid; A pure spray which supplies pure water to the cleaning brush in a spray form while the cleaning step is finished and the substrate is not supplied to the cleaning brush; So that the cleaning brush does not clean for a long period of time, it is preferable that the pure water is supplied little by little to the cleaning brush in a wet state.

As described above, according to the present invention, when the polishing process information indicating that the chemical mechanical polishing process is abnormally stopped due to an error or the like without being normally terminated is transmitted to the cleaning device, de-ionized water is jetted to the cleaning brush of the cleaning device. The substrate is cleaned while rotating the cleaning brush at a higher speed while spraying the cleaning brush at a higher speed so as to immediately remove the impurities adhering to the cleaning brush from the substrate by the pure jet of the jet shape. As a result, the state of the cleaning brush is clean So that the substrate can be always cleanly cleaned without being scratched and damaged by foreign matter adhering to the cleaning brush.

That is, according to the present invention, when the chemical mechanical polishing process is terminated abnormally as compared with the case where the chemical mechanical polishing process is terminated normally, a larger amount of foreign substance is deposited on the substrate flowing into the substrate cleaning apparatus, The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a polishing apparatus and method for polishing a cleaning brush, which is capable of preventing contamination of the cleaning brush, The amount of the foreign matter adsorbed on the cleaning brush can be minimized while maintaining the amount of pure water to be used in an excessive amount by adjusting the flow rate of the pure water sprayed to the cleaning brush and the rotation speed of the cleaning brush according to the polishing process information, A cleaning method and a substrate cleaning apparatus are provided.

As a result, it is possible to obtain an advantageous effect that the substrate can be always cleanly cleaned while preventing the substrate from being scratched and damaged by the foreign matter adsorbed on the cleaning brush during the cleaning process of the substrate.

1 is a flowchart showing a sequence of a general substrate polishing and cleaning process,
2 is a view showing a configuration of a conventional substrate cleaning apparatus,
3 is a flowchart showing a substrate cleaning method after a chemical mechanical polishing process according to an embodiment of the present invention;
4 is a view showing a configuration in which a chemical mechanical polishing process is performed,
5A to 5C are diagrams showing a configuration in which a cleaning process is performed after a chemical mechanical process,
6 is an enlarged view of a portion 'A' in FIG. 5B.

Hereinafter, a substrate cleaning apparatus 100 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In describing the present invention, well-known functions or constructions will be omitted for the sake of clarity of the present invention, and the same or similar function or configuration will be given the same or similar reference numerals.

The substrate cleaning apparatus 100 according to an embodiment of the present invention includes a pair of cleaning brushes 120 for cleaning the surface of the substrate S while being in contact with the substrate S, An abrasive information receiving unit 160 for receiving abrasive process information 98 from the monitoring unit 110 of the apparatus 2 and an abrasive information receiving unit 160 for receiving abrasive information from the surface of the cleaning brush 120 based on the abrasive process information received from the abrasive information receiving unit 160. [ A cleaning liquid CHM is applied to the surface of the substrate S while the substrate S passes between the pair of cleaning brushes 120, (DIW) is sprayed to maintain the wet state of the cleaning brush 120 while the cleaning brush 120 stops the cleaning of the substrate S and is in a waiting state And a pure spray 150.

The polishing process information 98 is generated by the monitoring unit 98 as to whether or not the substrate S has normally undergone the chemical mechanical polishing process in the chemical mechanical polishing apparatus 2 shown in FIG. For example, the substrate S such as a wafer rotates with the rotation 50d of the carrier head 50 while being pressed toward the polishing pad 61 by the carrier head 50, The mechanical polishing process is performed by the rotation of the polishing pad 61 by the rotation 60d so that the substrate S positioned on the bottom surface of the carrier head 50 is released to the outside of the carrier head 50, S, the chemical mechanical polishing process is stopped for the substrate S being polished, and the chemical mechanical polishing process for the new substrate S is resumed.

Here, the error of the chemical mechanical polishing process may be caused by monitoring (55) the pressure P variation of the pressure chamber of the carrier head 50 pressing the substrate S, or by monitoring the substrate S from the bottom of the carrier head 50 And taking a picture of the protruding object with the camera 70, for example. The polishing process information 98 sensed by the monitoring unit 110 of the chemical mechanical polishing apparatus 2 is transmitted to the polishing information receiving unit 160 of the substrate cleaning apparatus 100 to be performed next.

The polishing information receiving unit 160 receives the polishing process information 98 from the monitoring unit 110 of the chemical mechanical polishing apparatus 2 and calculates the rotation speed of the cleaning brush 120 from the rotation speed of the pure water spraying unit 130 Adjust the injection amount per unit time of pure water (DIW) to be sprayed.

The cleaning brush 120 is installed so as to reciprocate in a direction 120d 'or a direction 120d' away from the conveying path 77 of the substrate S. The cleaning brush 120 approaches the transfer path 77 and transfers the substrate S in contact with both surfaces of the substrate S being transported when the substrate S is transported along the transport path 77 The substrate S is cleaned while the substrate S is waiting to enter the substrate S while moving in the direction 120d 'away from the transport path 77 and waits.

The cleaning brush 120 is formed of a material such as a sponge that is capable of staying in a liquid and deformed by an external force. Thus, as shown in Fig. 5A, the substrate S is cleanly rubbed by the substrate S while rubbing cleanly the substrate S while cleaning the substrate S.

6, the pure water jetting unit 130 injects pure water DIW within an angle range of 0 to 30 degrees, which is a small angle range with respect to the tangent line 99 of the cleaning brush 120, . Therefore, the pure water DIW ejected from the pure water jetting unit 130 maximizes the force for removing the foreign matter sticking to the cleaning brush 120, and the foreign matter is more easily removed from the cleaning brush 120 even with a small water pressure . The pure water jetting section 130 is arranged over the entire width (length in the direction perpendicular to the paper surface) of the cleaning brush 120 so that pure water DIW is jetted from a plurality of densely arranged jet nozzles at 1 bar RTI ID = 0.0 > 10 bar. ≪ / RTI > Particularly, when polishing process information indicating that the chemical mechanical polishing process has not been terminated normally and the substrate S having been stopped is transferred to the cleaning apparatus 100 is received based on the polishing information receiving unit 160, The pure water jetting unit 130 injects pure water DIW at a water pressure of 2 bar or more toward the cleaning brush 120 to remove the water from the substrate S to the cleaning brush 120 As soon as a large amount of foreign matter is adsorbed, it is removed immediately.

Accordingly, the section of the cleaning brush 120 indicated by '81' in FIG. 5B is contaminated by the foreign substance, but the section indicated by '82' by the high water pressure DIW is clean, The contact area between the cleaning brush 120 and the substrate S is always maintained in a clean state with almost no foreign matter.

At this time, the pure water jetting section 130 is arranged to spray pure water DIW toward the rear area 85 of the transfer direction 78 of the substrate S as shown in FIGS. 5A and 5B. Therefore, the foreign substances separated from the cleaning brush 120 by the pure water DIW sprayed from the pure water spraying unit 130 at a high pressure are adsorbed in the cleaned area of the substrate S, To prevent contamination.

The cleaning liquid supply unit 140 supplies the cleaning liquid CHM to the substrate S and the cleaning brush 120 so that the foreign matter on the surface of the substrate S is easily separated from the substrate S, So that the cleaning of the cleaning liquid is performed more cleanly.

The pure water spray 150 sprays the DIW onto the cleaning brush 120 with a low water pressure in the form of a spray spreading widely. Pure water 150 is sprayed with pure water DIW into the cleaning brush 120 in the atmosphere of the cleaning brush 120 so that the moisture content of the cleaning brush 120 is constant even when the moisture content of the cleaning brush 120 is waiting for the substrate S to flow in. The cleaning of the substrate S is not made uneven by the moisture contained in the cleaning brush 120 at the time when the substrate S starts to be cleaned and the cleaning quality can always be kept constant.

Hereinafter, the substrate cleaning method (S100) of the substrate cleaning apparatus 100 according to one embodiment of the present invention will be described in detail.

Step 1 : The monitoring unit 110 of the chemical mechanical polishing apparatus 2 changes the pressure P of the carrier head 50 pressing the substrate S to a real time (real time) during the chemical mechanical polishing process of the substrate S, Monitoring the variation of the photographed image of the camera 70 selectively picking up the polishing process on the upper side of the polishing pad 61 and monitoring in real time whether the chemical mechanical process is normally performed or not (S110).

The monitoring unit 110 of the chemical mechanical polishing apparatus 2 is configured such that the pressure value of the pressure chamber (not shown) of the carrier head 50 for pressing the substrate S changes abruptly, If it is detected that the pressure value of the pressure chamber fluctuates more than the allowable value or that the substrate S which is positioned on the bottom surface of the carrier head 50 from the photographed image of the camera 70 jumps out of the carrier head 50, It is regarded that an error has occurred in the polishing process of the substrate S being polished in the chemical mechanical polishing apparatus 2, and the chemical mechanical polishing process is stopped while outputting an alarm. Then, the polishing process information 98 monitored in real time is transferred to the cleaning apparatus 100 in which the substrate S having undergone the chemical mechanical polishing process is cleaned.

On the other hand, even if the chemical mechanical polishing process of the substrate S performed in the chemical mechanical polishing apparatus 2 is normally completed, the monitoring section 110 of the chemical mechanical polishing apparatus 2 can perform the polishing process normally Information 98 to the cleaning apparatus 100.

Step 2 : When the polishing information receiving unit 160 of the cleaning apparatus 100 receives the polishing process information 98 indicating that the chemical mechanical polishing process has been normally completed from the monitoring unit 110 of the chemical mechanical polishing apparatus 2, The cleaning apparatus 100 performs a normal cleaning process.

5A, when the substrate S having normally terminated the chemical mechanical polishing process normally flows into the cleaning chamber 50 along the conveying path 77 by the conveying means 78, The cleaning brush 120 is moved in a direction indicated by reference numeral 120d to a position where the cleaning brush 120 can contact the cleaning brush 120 on the substrate S transported along the cleaning brush 77. [ Then, while supplying the cleaning liquid CHM to the substrate S through the cleaning liquid supply unit 140, pure water DIW of the first flow rate per unit time through the pure water jetting unit 130 is supplied to the cleaning brush 120 (S120) while transferring the substrate S along the transport path 77 while spraying the substrate S to be supplied over the width.

Here, the water pressure of the pure water DIW sprayed from the pure water jetting unit 130 is set to about 1 bar, and the foreign substance is removed from the cleaning brush which adheres to the substrate S.

According to another embodiment of the present invention, when polish process information 98 indicating that the chemical mechanical polishing process has been completed normally, pure water DIW is not ejected from the pure water spray unit 130, A cleaning process may be performed.

Step 3 : The polishing information receiving unit 160 of the cleaning apparatus 100 receives the polishing process information 98 from the monitoring unit 110 of the chemical mechanical polishing apparatus 2 that the chemical mechanical polishing process has abnormally stopped during the process 5B, since the surface of the substrate S transferred from the chemical mechanical polishing apparatus 2 contains more foreign substances, the amount of pure water DIW ejected from the pure water jetting unit 130 The substrate cleaning is performed while removing the foreign substances attracted to the cleaning brush 120 from the substrate S more effectively by increasing the rotation speed of the cleaning brush 120 while increasing the water pressure.

In other words, as shown in Fig. 5B, when the substrate S which abnormally stopped the chemical mechanical polishing process normally flows into the cleaning chamber 50 along the transport path 77 by the transporting means 78, The cleaning liquid CHM is supplied from the supply part 140 and the pure water DIW of the second flow amount is injected from the pure water jetting part 130 to the substrate S ).

At this time, the pure water DIW sprayed from the pure water spraying section 130 is injected at a high pressure in a direction substantially coinciding with the direction of the tangent line 99 of the cleaning brush 120 (about 10 degrees) So that the adsorbed foreign matter acts as a large force for separating the cleaning brush 120 from the cleaning brush 120. Since the direction of spraying the pure water DIW from the pure water jetting section 130 is directed to the area 85 which has not yet been cleaned, the substrate S is subjected to secondary contamination .

Here, the water pressure of the pure water DIW sprayed from the pure water jetting unit 130 is sprayed at about 10 bar within about 2 bar, and the second flow rate per unit time is the first flow rate per unit time injected when the chemical mechanical polishing process is normally terminated It is more than doubled.

Step 4 : On the other hand, during the waiting time for completing the cleaning process of the substrate S and then waiting for the substrate S to flow in, the cleaning brush 120 is moved to the conveying path And moves in the direction 120d 'away from the spray nozzle 77 and maintains the wet state by pure water DIW sprayed from the pure spray 150 while slowly rotating (120r).

In this manner, by supplying pure water DIW to the cleaning brush 120 in the form of spray during the waiting time when the cleaning process is completed, the water content of the cleaning brush 120 in the atmospheric step and the cleaning step can be kept constant , The difference in the content of moisture contained in the cleaning brush 120 at the time when the substrate S starts to be cleaned can be equally adjusted so that the cleaning of the substrate can always be made constant.

When the cleaning brush 120 is cleaned by the above-described process, the test results of the cleaning effect in comparison with the conventional method of immersing the cleaning brush in pure water and shaking it are as follows.

LOT Conventional cleaning brush cleaning The cleaning brush cleaning according to the present invention 1 time 389 290 Episode 2 796 173 Average 593 231.5 Deviation 287 83

Table 1 shows the conventional method of cleaning a substrate (PETEOS wafer) subjected to the same chemical mechanical polishing process with a cleaning brush, then washing the cleaning brush with pure water and cleaning the substrate with a cleaning brush, The number of foreign particles remaining in the cleaning brush after cleaning the cleaning brush by the method according to the present invention is measured with a KLA-Tencor inspecting instrument.

As shown in Table 1, in the cleaning method of the cleaning brush twice, it can be confirmed that the number of particles of foreign matter of 60% or more is reduced compared with the conventional method. Further, according to the present invention, since the cleaning brush is cleaned simultaneously with the cleaning of the substrate without cleaning the cleaning brush separately from the cleaning process, the present invention can improve the cleaning efficiency of the cleaning brush, It was confirmed that the effect was much better.

As described above, the present invention is based on the fact that the amount of foreign matter adhering to the cleaning brush 120 varies depending on whether the chemical mechanical polishing process is terminated normally or abnormally, so that a large amount of foreign matter is adsorbed to the cleaning brush 120 A large amount of foreign matter adhering to the cleaning brush 120 is immediately removed by jetting high-pressure pure water DIW and rotating the cleaning brush 120 at a higher speed as soon as the cleaning brush 120 is rotated, It is possible to obtain an advantageous effect that the substrate S to be cleaned by the cleaning brush 120 is not scratched and damaged by the abrasive grains adsorbed on the cleaning brush 120, and at the same time, the clean cleaning can always be sustained.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And can be appropriately changed within the scope of the claims.

2: Chemical mechanical polishing apparatus 98: Polishing process information
100: substrate cleaning apparatus 110: monitoring unit
120: cleaning brush 130: pure water jetting part
140: cleaning liquid supply unit 150: pure spray
S: substrate

Claims (14)

A cleaning method for cleaning a substrate subjected to a chemical mechanical polishing process,
An abrasive information transfer step of transferring abrasive process information in a polishing process for performing the chemical mechanical polishing process on the substrate to a cleaning device;
Wherein when the polishing process information indicating that the chemical mechanical polishing process is stopped before the chemical mechanical polishing process is normally terminated is transmitted to the cleaning device, the substrate is cleaned while spraying pure water to the cleaning brush of the cleaning device ;
And cleaning the substrate.
The method according to claim 1,
Wherein the pure water is injected at a high pressure toward the region where the substrate is not cleaned.
3. The method of claim 2,
Wherein the pure water is injected at a high pressure at an angle of 0 to 30 degrees with respect to a tangential direction of the cleaning brush.
3. The method of claim 2,
If the polishing process information indicating that the chemical mechanical polishing process has been stopped before the chemical mechanical polishing process is completed is transmitted to the cleaning device, the polishing process information indicating that the chemical mechanical polishing process has been completed normally, Wherein the cleaning of the substrate is carried out while injecting a higher pressure of the pure water to the cleaning brush of the cleaning device than when the cleaning liquid is transferred to the cleaning brush.
The method according to claim 1,
Wherein when the polishing process information indicating that the chemical mechanical polishing process is stopped before the chemical mechanical polishing process is completed is transmitted to the cleaning device, the chemical mechanical polishing process is performed in a state where the chemical mechanical polishing process is terminated Thereby increasing the rotational speed of the substrate.
6. The method according to any one of claims 1 to 5,
Wherein the pure water is sprayed by a nozzle jet method.
6. The method according to any one of claims 1 to 5,
Supplying pure water to the cleaning brush in a spray form while the cleaning step is finished and the substrate is not supplied to the cleaning brush;
Further comprising the steps of:
1. A cleaning apparatus for cleaning a substrate subjected to a chemical mechanical polishing process,
A cleaning brush for cleaning the surface of the substrate while being in contact with the substrate;
An abrasive process information receiving unit for receiving the abrasive process information on the substrate in the chemical mechanical polishing process;
Wherein when the polishing process information receiving unit receives the polishing process information indicating that the chemical mechanical polishing process is stopped before the chemical mechanical polishing process is completed, the pure water jetting unit injects pure water into the cleaning brush during the cleaning process of the substrate ;
The substrate cleaning apparatus comprising:
9. The method of claim 8,
Wherein the pure water is sprayed over the entire width of the cleaning brush while being directed toward the trailing area of the substrate in the transport direction.
10. The method of claim 9,
Wherein the pure water is injected at a high pressure at an angle of 0 to 30 degrees with respect to a tangential direction of the cleaning brush.
11. The method according to any one of claims 8 to 10,
Wherein the pure water is jetted by a nozzle jet method.
11. The method according to any one of claims 8 to 10,
Characterized in that even when the polishing process information receiving unit receives the polishing process information indicating that the chemical mechanical polishing process has normally ended, the pure water jetting unit cleans the substrate while spraying pure water to the cleaning brush Cleaning device.
13. The method of claim 12,
Wherein, when the polishing process information receiving unit receives the polishing process information indicating that the chemical mechanical polishing process has been stopped before the substrate is normally terminated, the pure water jetting unit performs the chemical mechanical polishing process so that the chemical mechanical polishing process is terminated normally Wherein the substrate cleaning apparatus cleans the substrate while spraying pure water at a higher pressure than the pure water spraying unit per unit time, as compared to when the polishing process information is received by the polishing process information receiving unit.
11. The method according to any one of claims 8 to 10,
Wherein the cleaning brush is formed of a material which floats the liquid;
A pure spray which supplies pure water to the cleaning brush in a spray form while the cleaning step is finished and the substrate is not supplied to the cleaning brush;
Wherein the substrate cleaning apparatus further comprises:

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