JPH03218693A - Ceramic multilayer wiring board - Google Patents
Ceramic multilayer wiring boardInfo
- Publication number
- JPH03218693A JPH03218693A JP33179189A JP33179189A JPH03218693A JP H03218693 A JPH03218693 A JP H03218693A JP 33179189 A JP33179189 A JP 33179189A JP 33179189 A JP33179189 A JP 33179189A JP H03218693 A JPH03218693 A JP H03218693A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor layer
- wiring board
- multilayer wiring
- ceramic multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract 3
- 239000010410 layer Substances 0.000 claims description 100
- 239000010949 copper Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 239000006104 solid solution Substances 0.000 abstract description 10
- 238000007747 plating Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、電子回路部品として使用されるセラミック
多層配線基板およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ceramic multilayer wiring board used as an electronic circuit component and a method for manufacturing the same.
［従来の技術］
従来の混成集積回路などに使用されるセラミック多層配
線基板は、゛絶縁層となるセラミック生基板にＷ，Ｍｏ
等の高融点金属を主成分とする第１導体層と、該導体層
を一部露出させる開口部を備えた絶縁層と、該絶縁層か
ら前記開Ｉ１部分と連接する銅を主成分とする金属厚膜
からなる第２導体層からなる構成である。このような構
成においては接触抵抗が高く、接着強度も弱くなる欠点
があり、特に第１導体層表面が酸化している場合には顕
著である．
このため、上記問題点を防ぐ工夫がなされている。その
例として、実開昭５７−１２７７５では第１導体層と第
２導体層との接続部に、電解メッキ、無電解メッキある
いは蒸着等の手段によるメタライズ層を介して第１導体
層と第２導体層とが接続される構成の提案がある。[Prior Art] Ceramic multilayer wiring boards used in conventional hybrid integrated circuits, etc. are made by adding W and Mo to a raw ceramic substrate that serves as an insulating layer.
a first conductor layer mainly composed of a high melting point metal such as, an insulating layer having an opening that partially exposes the conductor layer, and a first conductor layer mainly composed of copper connected to the open I1 part from the insulating layer. This structure includes a second conductor layer made of a thick metal film. Such a structure has the drawbacks of high contact resistance and low adhesive strength, which is particularly noticeable when the surface of the first conductor layer is oxidized. For this reason, efforts have been made to prevent the above problems. As an example, in Utility Model Application Laid-open No. 57-12775, a metallized layer is formed between the first conductor layer and the second conductor layer by means of electrolytic plating, electroless plating, vapor deposition, etc. There is a proposal for a configuration in which a conductor layer is connected.
また別の例として、特公昭６３−４２８７９ではメタラ
イズ層の製造方法としてニッケル、コバルトあるいは銅
よりなる膜厚０．２〜５．０μＩのメッキ層の形成方法
の提案がある。As another example, Japanese Patent Publication No. 63-42879 proposes a method of forming a plating layer of nickel, cobalt, or copper with a thickness of 0.2 to 5.0 .mu.I as a method for manufacturing a metallized layer.
［発明が解決しようとする課題］
従来のセラミック多層配線基板のメタライズ層は、無電
解メッキ法では開口部分以外の周辺にブリードが発生す
るし、電解メッキ法ではメッキ引き回し線の設定による
基板寸法の制限あるいはメッキ引き回し線の配置によっ
て浮遊容量が増大する等機械的、電気的な品質上の課題
があった。[Problems to be Solved by the Invention] In the metallized layer of conventional ceramic multilayer wiring boards, bleeding occurs around areas other than openings when using electroless plating, and when using electrolytic plating, it is difficult to control board dimensions due to the setting of plating routing lines. There were mechanical and electrical quality issues such as an increase in stray capacitance due to restrictions or the arrangement of plated routing lines.
また、金属粉末等からなる市販の厚膜ペーストによる厚
膜メタライズ法ではメタライズ層は緻密膜質でないため
、十分な接着特性が得られないという課題があった．
また、メッキ法では、メッキ液は必ず使用されるが、メ
ッキ面である第１導体層の表面に第５図（断面図）に示
すような穴（８）がある場合、その穴（８）にメッキ液
が残存することがある。そのため、セラミック多層配線
基板の変色、導体層の酸化による劣化等の品質上の課題
があった。In addition, in the thick film metallization method using a commercially available thick film paste made of metal powder, etc., the metallized layer is not dense, so there is a problem in that sufficient adhesion properties cannot be obtained. In the plating method, a plating solution is always used, but if there is a hole (8) as shown in Figure 5 (cross-sectional view) on the surface of the first conductor layer, which is the plating surface, the hole (8) Plating solution may remain. Therefore, there were quality problems such as discoloration of the ceramic multilayer wiring board and deterioration due to oxidation of the conductor layer.
本発明の目的は、上述の課題を解決するため、メタライ
ズ層を改良し、生産性が高く、電気的、機械的な品質に
優れ、信頼性の高いセラミック多層配線基板およびその
製造方法の提供である。In order to solve the above-mentioned problems, an object of the present invention is to provide a ceramic multilayer wiring board with improved metallization layer, high productivity, excellent electrical and mechanical quality, and high reliability, and a method for manufacturing the same. be.
［課題を解決するた゛めの手段］
上記目的を達成するため、本発明の第１は、内層に高融
点金属を主成分とする第１導体層と、表面層に銅を主成
分とする第２導体層とを備えたセラミック多層配線基板
において、第１導体層と第２導体層との接続部にＰｔ，
Ｎｉ， Ｃｕ．Ａｕ， Ｒｈ．Ｒｕ、Ｒｅ．Ｃｏ，
ＰｄおよびＩｒのいずれか１種または２種以上の成分か
らなるメタロオーガニックスペーストを塗付、焼成した
メタライズ層を備えたことを特徴とするセラミック多層
配線基板である。[Means for Solving the Problems] In order to achieve the above object, the first aspect of the present invention is to provide a first conductor layer whose inner layer is made of a high melting point metal, and a second conductor layer whose surface layer is made of copper as its main ingredient. In a ceramic multilayer wiring board having a conductor layer, Pt,
Ni, Cu. Au, Rh. Ru, Re. Co,
This is a ceramic multilayer wiring board characterized by comprising a metallized layer coated with a metallo-organic paste made of one or more of Pd and Ir and fired.
また、第２は、第１のセラミック多層配線基板の製造方
法であって、前記メタライズ層はＰＬ、Ｎｉ、Ｃｕ．
Ａｕ． Ｒｈ．Ｒｕ．Ｒｅ．Ｃｏ， ＰｄおよびＩｒの
いずれか１種または２種の成分からなるメタロオーガニ
ックスペーストを塗付、焼成することを特徴とするセラ
ミック多層配線基板の製造方法である．［作用コ
本発明のメタロオーガニックスペースト（Ｍｅｔａｌｌ
ｏ Ｏｒｇａｎｉｃｓ Ｐａｓｔｅｓ ）は、錯体ペー
ストであって、ガラス質のフリット分や金属酸化物を含
まない．
本発明の作用を第１図および第２図を用いて説明する。A second method is a method for manufacturing the first ceramic multilayer wiring board, in which the metallized layer is made of PL, Ni, Cu.
Au. Rh. Ru. Re. This is a method for manufacturing a ceramic multilayer wiring board, which comprises applying and firing a metallo-organic paste consisting of one or two of Co, Pd, and Ir. [Function] The metallo-organic paste of the present invention (Metall)
o Organics Pastes) is a complex paste that does not contain glassy frits or metal oxides. The operation of the present invention will be explained using FIGS. 1 and 2.
第１図は本発明の一実施例のセラミック多層配線基板の
断面図である。絶縁層（１）となるセラミック生基板に
Ｗ−Ｍｏ等の高融点金属を主成分とした市販のＷペース
ト、Ｍｏペースト等で所定の配線を基板面およびスルー
ホール部に塗付する。さらに必要に応じてこれを複数枚
作成して積層することができる。次に、焼成して絶縁層
（１）と第１導体層（２）が一体化してコファイヤード
（Ｃｏｆ ｉｒｅｄ ）多層基板（５）となる．次に、
この第１導体層による配線が露出する部分全体を覆うた
めにメタロオーガニックスペーストを塗付し、焼成して
メタライズ層（３）とする。次に、メタライズ層（３）
を介して、銅を主成分とする市販の銅ペーストにより所
定の配線を塗付し、焼成して第２導体層（４）を形成す
る。次に、図示しないが、必要に応じて、抵抗体層およ
びその抵抗体層を保護するガラス層、また、オーバーコ
ート樹脂層を設けることができる。FIG. 1 is a sectional view of a ceramic multilayer wiring board according to an embodiment of the present invention. A predetermined wiring is applied to the substrate surface and through-hole portions of a ceramic green substrate that will become the insulating layer (1) using commercially available W paste, Mo paste, etc. whose main component is a high melting point metal such as W-Mo. Furthermore, if necessary, a plurality of sheets can be created and stacked. Next, by firing, the insulating layer (1) and the first conductor layer (2) are integrated to form a cofired multilayer substrate (5). next,
A metallo-organic paste is applied to cover the entire exposed portion of the first conductor layer wiring, and is fired to form a metallized layer (3). Next, metallized layer (3)
A predetermined wiring is coated with a commercially available copper paste containing copper as a main component through the wafer, and then baked to form a second conductor layer (4). Next, although not shown, a resistor layer, a glass layer for protecting the resistor layer, and an overcoat resin layer can be provided as necessary.
第２図は、第１図の○部の部分拡大図で、断面構造を詳
細に示した断面図である。図において、本発明のメタラ
イズ層（３）は、第１導体層（２）の凹凸面に容易に沿
い、凹部であっても深く入り込み、焼成によりメカニカ
ルアンカー効果と第１導体層（２）と固溶体層（６）を
生成している。FIG. 2 is a partial enlarged view of the circle part in FIG. 1, and is a cross-sectional view showing the cross-sectional structure in detail. In the figure, the metallized layer (3) of the present invention easily follows the uneven surface of the first conductor layer (2), penetrates deeply even into recesses, and when fired, it creates a mechanical anchor effect and the first conductor layer (2). A solid solution layer (6) is generated.
また、このメタライズ層は、第２導体層（４）ともメカ
ニカルアンカー効果があり、固溶体層（７）を生成する
．
そのため、本発明のメタロオーガニックスペーストによ
るメタライズ層は、次のような■および■の作用効果が
ある。■第１導体層および第２導体層との接着強度は強
固なものとなる．モデル的に上記構成による試験片で、
第２導体層の上に銅１を２Ｘ２ｍｍ口全面にハンダ付け
して引張強度を測定したところ７〜１３Ｋｇ／２ａ＋ｍ
口であった。比較として、同様の試験片でメタライズ層
をメッキ法により形成した場合、引張強度は、５〜７ｋ
ｇ／２ｍｍ口であり、また、金属粉末等からなる厚膜ペ
ーストて形成した場合、緻密膜質とならず、引張強度は
２〜３ ｋｇ ／２ｍｍ Ｔｌと低かった。Further, this metallized layer also has a mechanical anchor effect with the second conductor layer (4) and forms a solid solution layer (7). Therefore, the metallized layer made of the metallo-organic paste of the present invention has the following effects (1) and (2). ■The adhesive strength between the first conductor layer and the second conductor layer is strong. A test piece with the above configuration as a model,
Copper 1 was soldered to the entire surface of the 2x2mm opening on the second conductor layer, and the tensile strength was measured: 7-13Kg/2a+m
It was the mouth. For comparison, when a metallized layer was formed using a plating method on a similar test piece, the tensile strength was 5 to 7 k.
g/2 mm, and when it was formed from a thick film paste made of metal powder or the like, it did not have a dense film quality and the tensile strength was as low as 2 to 3 kg/2 mm Tl.
さらに、本発明の作用効果は、■導体成分とのメカニカ
ルアンカー効果および固溶体化（合金化）によりオーミ
ックコンタクトを形成することである。Furthermore, the effect of the present invention is (1) to form an ohmic contact by the mechanical anchor effect and solid solution formation (alloying) with the conductor component.
メタロオーガニックスペーストの成分は、第１導体層あ
るいは第２導体層の成分によって、固溶体となる成分を
選ぶことが好ましい．
以下、実施例について図面を参照して説明する。The components of the metallo-organic paste are preferably selected to form a solid solution depending on the components of the first conductor layer or the second conductor layer. Examples will be described below with reference to the drawings.
［実施例］
［実施例１および比較例１コ
以下、実施例１について、比較例１と対比して説明する
。[Example] [Example 1 and Comparative Example 1] Example 1 will be described below in comparison with Comparative Example 1.
実施例１は、アルミナを主成分として、これにシリカ、
カルシア等の焼結助材および有機バインダー等を加えて
混合して、ドクターブレード法等で成形した絶縁層（１
）となるセラミ・ソク生基板の複数枚の基板面およびス
ルーホールに、第１導体層（２）となるＷを主成分とし
たＷペーストをスクリーン印刷法等で必要な導体配線を
形成し、これらを複数枚積層゜した後、水素等の還元雰
囲気、１４００゜Ｃ−１７００℃で焼成して、絶縁層（
１）と第１導体層（２）と一体化してコファイヤード多
層基板（５）とする。In Example 1, alumina is the main component, and silica and
An insulating layer (1
) Form the necessary conductor wiring on the multiple substrate surfaces and through-holes of the ceramic substrate to become the first conductor layer (2) using a W paste containing W as the main component by screen printing, etc. After laminating multiple layers of these, they are fired at 1400°C to 1700°C in a reducing atmosphere such as hydrogen to form an insulating layer (
1) and the first conductor layer (2) to form a cofired multilayer substrate (5).
次に、コファイヤード多層基板（５）の外表面に第１導
体層（２）が露出している部分（第１導体層のうち絶縁
層で覆われていない配線部分）にｐｔメタロオーガニッ
クスペーストをスクリーン印刷等で塗布し、次に、これ
を酸化雰囲気で３５０℃〜４５０℃、１０分間脱バイン
ダー処理をした後、窒素雰囲気または水素雰囲気で７０
０℃〜１１００℃、１０分間熱処理してメタライズ層（
３）を形成する。Next, on the outer surface of the cofired multilayer board (5), a PT metal organic space is formed on the exposed part of the first conductor layer (2) (the wiring part of the first conductor layer that is not covered with the insulating layer). This is applied by screen printing, etc., and then subjected to debinding treatment for 10 minutes at 350°C to 450°C in an oxidizing atmosphere, and then treated for 70 minutes in a nitrogen or hydrogen atmosphere.
The metallized layer (
3) Form.
このときのメタライズ層の厚みは、０．０５〜５．０μ
ｍの範囲であればよいが、好ましくは約２μ讃である。The thickness of the metallized layer at this time is 0.05 to 5.0μ
It may be within the range of m, but preferably about 2μ.
次に、銅を主成分とする厚膜ペースト（例えば、商品名
ＤＵＰＯＮＴ ＃９９２２）を用いて、前記メタライズ
層（３）を介してスクリーン印刷等の方法で印刷後、窒
素雰囲気中において、９００℃、１０分焼成して第２導
体層（４）とし、セラミック多層配線基板とする。さら
に、図示しないが、必要に応じて、抵抗体層およびその
抵抗体層を保護するガラス層、また、オーバーコート樹
脂層を設ける。Next, a thick film paste containing copper as a main component (for example, DUPONT #9922) is printed on the metallized layer (3) by a method such as screen printing, and then heated at 900° C. in a nitrogen atmosphere. , and baked for 10 minutes to form a second conductor layer (4), which is then used as a ceramic multilayer wiring board. Furthermore, although not shown, a resistor layer, a glass layer for protecting the resistor layer, and an overcoat resin layer are provided as necessary.
このｐｔメタロオーガニックスペーストよりなるメタラ
イズ層は電気的、機械的に安定で、強固な接合層を形成
する。すなわち、第１導体層のＷおよび第２導体層のＣ
ｕの双方と固溶性に優れていて、焼成により拡散して容
易に固溶体となり、また、メカニカルアンカー効果も有
している。This metallized layer made of PT metal organic paste is electrically and mechanically stable and forms a strong bonding layer. That is, W in the first conductor layer and C in the second conductor layer.
It has excellent solid solubility with both u, easily diffuses into a solid solution upon firing, and also has a mechanical anchor effect.
この効果を第３図で説明する。同図は、実施例１および
比較例１の引張強度の初期値から−４０℃〜１５０℃で
の冷熱サイクルを１０００サイクルまで行ったときの変
化を図示する。この比較例１は第１導体と第２導体との
接続部にメタライズ層の介在のない場合であり、その他
の条件は実施例１と同じである。実施例１は、比較例１
に比べ初期値そのものが数倍高い約１３．０ｋｇ／２ｍ
ｍ口であり、１０００サイクル後で約１０ ．０ｋｇ
／２ｗ＋ｍ Ｏと十分高い値である．一方、比較例１は
初期値約３；０ ｝ｃｇ／２ｍｍ口と小さな値であり、
さらに、１５０サイクルで引張強度は５０％程度低下し
、その後もさらに低下する．また、実施例１は、重要な
電気特性であるオーミックコンタクトにも優れている。This effect will be explained with reference to FIG. This figure illustrates the change in tensile strength of Example 1 and Comparative Example 1 when the tensile strength was subjected to 1000 cycles of cooling and heating at -40°C to 150°C from the initial value. Comparative Example 1 is a case in which there is no intervening metallized layer at the connection between the first conductor and the second conductor, and other conditions are the same as in Example 1. Example 1 is Comparative Example 1
The initial value itself is several times higher than that of approximately 13.0 kg/2 m.
m mouth, and about 10.m after 1000 cycles. 0kg
/2w+mO, which is a sufficiently high value. On the other hand, Comparative Example 1 has a small initial value of approximately 3;0 }cg/2mm mouth,
Furthermore, the tensile strength decreases by about 50% after 150 cycles, and decreases further thereafter. Furthermore, Example 1 is excellent in ohmic contact, which is an important electrical property.
第４図は、実施例１のＷ − Ｃ ｕ間の電圧一電流の
関係を示す特性図である。同図から、電圧と電流の関係
は直線の関係にあることがわかる。FIG. 4 is a characteristic diagram showing the voltage-current relationship between W and Cu in Example 1. From the figure, it can be seen that the relationship between voltage and current is a linear relationship.
本発明は、上述の優れた効果に加えて、メタロオーガニ
ックスペーストの塗布時に、位置ずれ等のため、必要と
しない部分（絶縁層部分）にはみでた場合、焼成により
絶縁層部分には十分に接着する強度がなく、超音波洗浄
、ブラッシング等の手法により容易に除去できる．その
ため、不必要なメタライズ層部分が存在せず、その点で
も電気的、機械的な特性を損なうことがなく、品質的に
安定し、信頼性を増す。In addition to the above-mentioned excellent effects, the present invention provides that when metallo-organic paste is applied to an unnecessary part (insulating layer part) due to positional shift, etc., the metallo-organic paste can be sufficiently applied to the insulating layer part by baking. It has no adhesive strength and can be easily removed by methods such as ultrasonic cleaning and brushing. Therefore, unnecessary metallized layer portions are not present, and electrical and mechanical properties are not impaired in this respect, resulting in stable quality and increased reliability.
さらに、本発明の品質、生産性の評価を行ったが、主な
品質不良の一つであるブリードによるショート不良は０
％であり、また表面絶縁抵抗による劣化不良はＯ％であ
る。しかし、従来法のメッキ法によるメタライズ層の場
合では、それぞれの不良率は１５〜６０％であり、本発
明が品質、生産性の点で極めて優れているといえる．
［実施例２］
実施例１との相違点だけを述べると、Ｐｄメタロオーガ
ニックスペーストをディスベンサで塗布し、次いで、こ
れを酸化雰囲気で３５０℃〜４５０℃、１０分間脱バイ
ンダー処理をした後、窒素雰囲気または水素雰囲気で７
００℃〜１１００℃、１０分間熱処理した。このときの
メタライズ層の厚みは約２μ鍋である。Furthermore, we evaluated the quality and productivity of the present invention, and found that there were no short-circuit defects due to bleeding, which is one of the main quality defects.
%, and deterioration defects due to surface insulation resistance are 0%. However, in the case of metallized layers formed by conventional plating methods, the defect rate for each layer is 15 to 60%, and it can be said that the present invention is extremely superior in terms of quality and productivity. [Example 2] To describe only the differences from Example 1, Pd metalloorganic paste was applied with a dispenser, and then the binder was removed in an oxidizing atmosphere at 350°C to 450°C for 10 minutes. 7 in nitrogen or hydrogen atmosphere
Heat treatment was performed at 00°C to 1100°C for 10 minutes. The thickness of the metallized layer at this time was approximately 2 μm.
ここで、Ｐｄメタロオーガニックスペーストを選んだの
は第１導体のＭｏと第２導体のＣｕとの双方に固溶性に
優れ、拡散して固溶体を作り、またメカニカルアンカー
効果を有していて電気的、機械的に安定で、強固な接合
層が得られる。同時に、絶縁層には接着する強度がなく
、実施例１と同様に電気的、機械的な特性を損なうこと
がない。Here, Pd metallo-organic paste was selected because it has excellent solid solubility in both Mo of the first conductor and Cu of the second conductor, diffuses to form a solid solution, and has a mechanical anchor effect, so it is electrically A bonding layer that is physically and mechanically stable and strong can be obtained. At the same time, the insulating layer does not have adhesive strength, and as in Example 1, the electrical and mechanical properties are not impaired.
こうして得た製品の品質は実施例１と同様優れたもので
ある。The quality of the product thus obtained is as excellent as in Example 1.
［実施例３］
実施例１の方法で作製した絶縁層となるセラミック生基
板上に、第１導体層となるＷまたはＭｏの高融点金属を
主成分としたメタライズペーストをスクリーン印刷法に
より配線を形成し、次にその上に絶縁層となるアルミナ
を主成分とするセラミック系絶縁ペーストによりスクリ
ーン印刷法により印刷層を重ね合わせて形成する。次に
、これを水素等の還元雰囲気、１４００℃〜１７００℃
で焼成して、高融点金属を主成分とする第１導体層と絶
縁層が一体化してコファイヤード多層基板とする。[Example 3] On the ceramic green substrate which will become the insulating layer produced by the method of Example 1, a metallized paste mainly composed of a high melting point metal such as W or Mo, which will become the first conductor layer, is printed using a screen printing method. Then, a printed layer is formed thereon by screen printing using a ceramic insulating paste containing alumina as a main component to form an insulating layer. Next, this is heated in a reducing atmosphere such as hydrogen at 1400°C to 1700°C.
The first conductor layer containing a high melting point metal as a main component and the insulating layer are integrated to form a cofired multilayer substrate.
その他の条件は実施例１で述べた方法で行い、また、結
果も同様に優れたものである。The other conditions were as described in Example 1, and the results were similarly excellent.
以上のように、本発明のメタライズ層は、メタロオーガ
ニックスペーストのスクリーン印刷法、ディスベンサー
等の常法で塗付し、焼成して形成できる。メッキ法のよ
うに温度、Ｐ｝ｌ等の条件を調整する必要もなく、また
メッキ液の管理は不要等の利点があり、その点でも生産
性は有利である。As described above, the metallized layer of the present invention can be formed by applying a metallo-organic paste by a conventional method such as screen printing or using a dispenser, and then baking it. Unlike the plating method, there is no need to adjust conditions such as temperature and P}l, and there is no need to manage the plating solution, and productivity is advantageous in this respect as well.
なお、その他上記のｐｔおよびＰｄを含めて、Ｎ＋、Ｃ
ｕ， Ａｕ， Ｒｈ．Ｒｕ．Ｒｅ．ＣｏおよびＩｒの１
種または２種以上の成分からなるメタロオーガニックス
ペーストによるメタライズ層においても上述したと同様
のよい結果を得た。In addition, including the above pt and Pd, N+, C
u, Au, Rh. Ru. Re. 1 of Co and Ir
Good results similar to those described above were obtained in a metallized layer made of a metallo-organic paste consisting of seeds or two or more components.
［発明の効果］
以上の説明のように、本発明は生産性が高く、電気的、
機械的な品質に優れ、高信頼性のセラミック多層配線基
板およびその製造方法の提供という工業的に極めて優れ
た効果がある．[Effects of the Invention] As explained above, the present invention has high productivity, electrical and
The present invention has an extremely excellent industrial effect of providing a ceramic multilayer wiring board with excellent mechanical quality and high reliability, and a method for manufacturing the same.
第１図は本発明の一実施例のセラミック多層配線基板の
断面図である．
第２図は本発明の第１図のＯ部分拡大図で、構造を詳細
に示した断面図である。
第３図は本発明の実施例１と比較例１の引張強度の初期
値と冷熱サイクル後の変化を示した説明図である。
第４図は本発明の実施例１のＷ − Ｃ ｕ間の電圧一
電流の関係を示す特性図である．
第５図はメッキ法による従来例の課題を説明するための
第１導体層面の断面図である。
１・・・絶縁層、２・・・第１導体層、３・・・メタラ
イズ層、４・・・第２導体層、５・・・コファイヤード
多層基板、６・・・第１導体とメタライズとの固溶体層
、７・・・第２導体とメタライズとの固溶体層、８・・
・穴。FIG. 1 is a sectional view of a ceramic multilayer wiring board according to an embodiment of the present invention. FIG. 2 is an enlarged view of part O in FIG. 1 of the present invention, and is a sectional view showing the structure in detail. FIG. 3 is an explanatory diagram showing initial values of tensile strength and changes after cooling/heating cycles in Example 1 of the present invention and Comparative Example 1. FIG. 4 is a characteristic diagram showing the voltage-current relationship between W and Cu in Example 1 of the present invention. FIG. 5 is a cross-sectional view of the first conductor layer for explaining the problems of the conventional plating method. DESCRIPTION OF SYMBOLS 1... Insulating layer, 2... First conductor layer, 3... Metallized layer, 4... Second conductor layer, 5... Cofired multilayer board, 6... First conductor. Solid solution layer with metallization, 7...Solid solution layer with second conductor and metallization, 8...
·hole.
Claims (2)
表面層に銅を主成分とする第２導体層とを備えたセラミ
ック多層配線基板において、第１導体層と第２導体層と
の接続部にＰｔ、Ｎｉ、Ｃｕ、Ａｕ、Ｒｈ、Ｒｕ、Ｒｅ
、Ｃｏ、ＰｄおよびＩｒのいずれか１種または２種以上
の成分からなるメタロオーガニックスペーストを塗布し
、焼成したメタライズ層を備えたことを特徴とするセラ
ミック多層配線基板。(1) a first conductor layer whose main component is a high melting point metal as an inner layer;
In a ceramic multilayer wiring board having a second conductor layer mainly composed of copper as a surface layer, Pt, Ni, Cu, Au, Rh, Ru, Re is used at the connection portion between the first conductor layer and the second conductor layer.
1. A ceramic multilayer wiring board comprising a metallized layer coated with a metallo-organic paste made of one or more of Co, Pd, and Ir and fired.
法であって、前記メタライズ層はＰｔ、Ｎｉ、Ｃｕ、Ａ
ｕ、Ｒｈ、Ｒｕ、Ｒｅ、Ｃｏ、ＰｄおよびＩｒのいずれ
か１種または２種以上の成分からなるメタロオーガニッ
クスペーストを塗布、焼成することを特徴とするセラミ
ック多層配線基板の製造方法。(2) The method for manufacturing a ceramic multilayer wiring board according to claim 1, wherein the metallized layer is made of Pt, Ni, Cu, A
A method for manufacturing a ceramic multilayer wiring board, comprising applying and firing a metallo-organic paste consisting of one or more of u, Rh, Ru, Re, Co, Pd, and Ir.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331791A JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
| US07/631,853 US5156903A (en) | 1989-12-21 | 1990-12-21 | Multilayer ceramic substrate and manufacture thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32745888 | 1988-12-23 | ||
| JP63-327458 | 1988-12-23 | ||
| JP1331791A JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03218693A true JPH03218693A (en) | 1991-09-26 |
| JPH0693545B2 JPH0693545B2 (en) | 1994-11-16 |
Family
ID=26572510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1331791A Expired - Fee Related JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0693545B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0660651A1 (en) * | 1993-12-27 | 1995-06-28 | Sumitomo Metal Ceramics Inc. | Multilayer ceramic circuit substrate, process for producing the same, and electrically conductive material for use in multilayer ceramic circuit substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4954859A (en) * | 1972-09-27 | 1974-05-28 | ||
| JPS5830194A (en) * | 1981-08-14 | 1983-02-22 | 日本碍子株式会社 | Ceramic multilayer circuit board and method of producing same |
| JPS59171195A (en) * | 1983-03-18 | 1984-09-27 | 日本碍子株式会社 | Method of producing ceramic multilayer circuit board |
-
1989
- 1989-12-21 JP JP1331791A patent/JPH0693545B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4954859A (en) * | 1972-09-27 | 1974-05-28 | ||
| JPS5830194A (en) * | 1981-08-14 | 1983-02-22 | 日本碍子株式会社 | Ceramic multilayer circuit board and method of producing same |
| JPS59171195A (en) * | 1983-03-18 | 1984-09-27 | 日本碍子株式会社 | Method of producing ceramic multilayer circuit board |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0660651A1 (en) * | 1993-12-27 | 1995-06-28 | Sumitomo Metal Ceramics Inc. | Multilayer ceramic circuit substrate, process for producing the same, and electrically conductive material for use in multilayer ceramic circuit substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0693545B2 (en) | 1994-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3237258B2 (en) | Ceramic multilayer wiring board | |
| JPS5852900A (en) | Method of producing ceramic multilayer circuit board | |
| JPS6342879B2 (en) | ||
| JPH03218693A (en) | Ceramic multilayer wiring board | |
| US6471805B1 (en) | Method of forming metal contact pads on a metal support substrate | |
| JP2842711B2 (en) | Circuit board | |
| JPH08293654A (en) | Formation of metal film on ceramic base material and metal-coated ceramic structure | |
| JPH0432297A (en) | Multilayer interconnection board and manufacture thereof | |
| JP3170429B2 (en) | Wiring board | |
| JP2842707B2 (en) | Circuit board | |
| JPH088505A (en) | Low temperature fired ceramic circuit board and manufacture thereof | |
| JPH03280491A (en) | Circuit board | |
| JP2931910B2 (en) | Circuit board | |
| JP2842710B2 (en) | Circuit board | |
| JPH04307797A (en) | Manufacture of multilayer ceramic circuit board | |
| JPS60198761A (en) | Soldering method | |
| JPH1098244A (en) | Thick-film circuit board and its manufacture | |
| JP2546929B2 (en) | Method for forming conductive layer stack | |
| JPS63186492A (en) | Manufacture of circuit board | |
| JPH0348496A (en) | Ceramic multilayer interconnection board and manufacture thereof | |
| JPS6263488A (en) | Manufacturing thick film substrate | |
| JPH04349690A (en) | Circuit board | |
| JPS61101093A (en) | Manufacture of thick film circuit board | |
| JPH06120674A (en) | Production of circuit board | |
| JPH10190227A (en) | Multilayer ceramic wiring board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |