JPH03218059A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH03218059A
JPH03218059A JP2014156A JP1415690A JPH03218059A JP H03218059 A JPH03218059 A JP H03218059A JP 2014156 A JP2014156 A JP 2014156A JP 1415690 A JP1415690 A JP 1415690A JP H03218059 A JPH03218059 A JP H03218059A
Authority
JP
Japan
Prior art keywords
chip
semiconductor device
resin
chips
die pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014156A
Other languages
Japanese (ja)
Inventor
Masayuki Nakaimukou
中居向 正幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2014156A priority Critical patent/JPH03218059A/en
Publication of JPH03218059A publication Critical patent/JPH03218059A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive the expansion of a function and characteristics, which is difficult in a signal semiconductor device, by a method wherein die pads for providing a plurality of semiconductor chips and the terminals of the chips are relayed by relay leads and are wire bonded. CONSTITUTION:This semiconductor device has a die pad 12 for providing a CMOS chip 11 and a die pad 14 for providing an MNO chip 13 and can withstand a stress to be applied from a resin, which is generated at the time of resin sealing. Then, the two die pads 12 and 14 are not put in a state that they are electrically connected to each other. Accordingly, even if substrate potentials of the respective chips 11 and 13 are different from each other, no problem is caused. Moreover, it is possible to connect a terminal 23 within the chip 11 with a terminal 24 within the chip 13 by wires 25 and 26 via a lead 21 having characteristics in form. By this connection, the device can be treated as one apparent functional block wherein the chip 11 comprises the NMOS chip 13.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は複数の半導体チップを同一容器内に内蔵した樹
脂封止型半導体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resin-sealed semiconductor device in which a plurality of semiconductor chips are housed in the same container.

従来の技術 従来の樹脂封止型半導体装置においては、一つの容器内
に1つの半導体チップが内蔵されている。
2. Description of the Related Art In a conventional resin-sealed semiconductor device, one semiconductor chip is housed in one container.

以下に従来の樹脂封止型半導体装置について説明する。A conventional resin-sealed semiconductor device will be described below.

第3図は従来の樹脂封止型半導体装置の平面図であり1
は半導体チップ、2は半導体チップ1のグイパッド、3
,4はグイパッドをささえるプイッシュテールと呼ばれ
るささえ用リード(以下フィッシュテールと略す)、5
はリードである。
Figure 3 is a plan view of a conventional resin-sealed semiconductor device.
is the semiconductor chip, 2 is the Guipad of semiconductor chip 1, 3 is the semiconductor chip
, 4 is a support lead called push tail (hereinafter abbreviated as fish tail) that supports the Guipad, 5
is the lead.

又、第4図は従来の樹脂打止型半導体装置の外観図であ
り、6は封止樹脂、7はリードである。
FIG. 4 is an external view of a conventional resin-molded semiconductor device, in which 6 is a sealing resin and 7 is a lead.

以上のように構成された従来の樹脂封止型半導体装置に
ついて説明する。
A conventional resin-sealed semiconductor device configured as described above will be explained.

従来の一例では一つの半導体チップ1を内蔵するために
一つのグイパッド2を有しており、このグイバッド2は
、樹脂封止するときに発生する応力に耐え得る様にフィ
ッシュテール3と4によってささえられている。
A conventional example has one Gui pad 2 to house one semiconductor chip 1, and this Gui pad 2 is supported by fishtails 3 and 4 so as to withstand the stress generated during resin sealing. It is being

発明が解決しようとする課題 上記に述べた従来の技術は、樹脂封止される半導体チッ
プが一つであるため、一つの半導体チップを内蔵する半
導体装置が持ち得る機能及び特性は内蔵している半導体
チップの製造工程によって、実現できる内容が制限され
る。
Problems to be Solved by the Invention In the conventional technology described above, only one semiconductor chip is sealed with resin, so the functions and characteristics that a semiconductor device containing one semiconductor chip can have are built-in. What can be achieved is limited by the semiconductor chip manufacturing process.

又.上記の欠点を克服するため従来からハイブJット方
式の組立技術が考えられているが、この場合、セラミッ
クパッケージを用いており、コストが高い点、生産性が
低い点などの欠点があった。
or. In order to overcome the above drawbacks, the Hive-Jet assembly technology has been considered, but in this case, a ceramic package is used, which has drawbacks such as high cost and low productivity. .

本発明は、上記従来の課題を解決するもので、一つの半
導体チップであるために困難だった機能及び特性の拡充
と、樹脂封正方式によってコストの低減を可能にした樹
脂封止型半導体装置を提供することを目的としている。
The present invention solves the above-mentioned conventional problems, and is a resin-sealed semiconductor device that makes it possible to expand the functions and characteristics that were difficult because it is a single semiconductor chip, and to reduce costs by using a resin-sealing method. is intended to provide.

課題を解決するための手段 この目的を達成するために、本発明の樹脂封止型半導体
装置は複数の半導体チップを装着できるように複数のダ
イパッドを設け、このダイパッドに装着された複数の半
導体チップは、リードを介してワイヤーで接続できる構
造を有している。
Means for Solving the Problems In order to achieve this object, the resin-sealed semiconductor device of the present invention is provided with a plurality of die pads so that a plurality of semiconductor chips can be mounted thereon. has a structure that allows connection with wires via leads.

作用 この構成により、従来,持たせることが困難だった複数
チップの機能及び特性を、一つの樹脂封止型半導体装置
として容易に持たせることができる。
Function: With this configuration, it is possible to easily provide the functions and characteristics of multiple chips, which were difficult to provide in the past, in a single resin-sealed semiconductor device.

実施例 以下に本発明の一実施例について図面を参照しながら説
明する。この実施例において、複数の半導体チップとは
、CMOS型のワンチップマイクロコンピュータ(以下
CMOSチップと略す)とMNOS型不輝発性′メモリ
ー(以下MNOSチップと略す)の2つのチップを指す
EXAMPLE An example of the present invention will be described below with reference to the drawings. In this embodiment, the plurality of semiconductor chips refers to two chips: a CMOS type one-chip microcomputer (hereinafter abbreviated as a CMOS chip) and an MNOS type non-luminescent memory (hereinafter abbreviated as an MNOS chip).

第1図は本発明の第1の実施例の樹脂封止型半導体装置
の平面図である。第1図において、11はCMOSチッ
プ、12はCMOSチップ11のダイパッド、13はM
NOSチップ、l4はMNOSチップ13のダイパッド
、15.16はCMOSチップ11のグイパッド12を
ささえるリード、17.18はMNOSチップ13のダ
イパッド14をささえるリード、19はMNOSチップ
13のダイパッド14をささえるプイッシュテールと呼
ばれるささえ用リード(以下MNOS側のフィッシュテ
ールと略す)、20は19と類似したCMOS個のフィ
ッシュテール、21は形状に特徴をもったリード、22
は従来と同様のリード23はCMOSチップ11内の端
子、24はMNOSチップ13内の端子、25.26は
ワイヤーである。
FIG. 1 is a plan view of a resin-sealed semiconductor device according to a first embodiment of the present invention. In FIG. 1, 11 is a CMOS chip, 12 is a die pad of the CMOS chip 11, and 13 is an M
NOS chip, l4 is a die pad of the MNOS chip 13, 15.16 is a lead that supports the guide pad 12 of the CMOS chip 11, 17.18 is a lead that supports the die pad 14 of the MNOS chip 13, and 19 is a lead that supports the die pad 14 of the MNOS chip 13. A support lead called an ish tail (hereinafter abbreviated as MNOS fish tail), 20 is a CMOS fish tail similar to 19, 21 is a lead with a characteristic shape, 22
Leads 23 are terminals in the CMOS chip 11, 24 are terminals in the MNOS chip 13, and 25 and 26 are wires, as in the conventional case.

第4図は従来の樹脂封止型半導体装置の外観図の一例で
あるが、本発明の一実施例の樹脂封止型半導体装置も同
様の外観図である。
FIG. 4 is an example of an external view of a conventional resin-sealed semiconductor device, and a similar external view of a resin-sealed semiconductor device according to an embodiment of the present invention.

以上のように構成された本実施例について説明する。The present embodiment configured as described above will be explained.

本実施例の特徴となる第一点は、CMOSチップ11の
ダイパッド12とMNOSチップ13のダイパッド14
の2つのダイパッドを有していることである。
The first feature of this embodiment is that the die pad 12 of the CMOS chip 11 and the die pad 14 of the MNOS chip 13
It has two die pads.

又、この2つのダイパッドは、樹脂封止時に発生する樹
脂から受ける応力に耐え得るようにCMOSチップ11
のダイパッド12はCMOSチップ11をささえるリー
ド15.16とCMOS側のフィッシュテール20によ
ってささえられており、同様にMNOSチップ13のダ
イパッド14はMNOSチップ13のダイパッド14を
ささえるリード17.18とMNOS側のフィッシュテ
ール19によってささえられている。
In addition, these two die pads are attached to the CMOS chip 11 in order to withstand stress from the resin that occurs during resin sealing.
The die pad 12 of the MNOS chip 13 is supported by the leads 15 and 16 that support the CMOS chip 11 and the fishtail 20 on the CMOS side, and the die pad 14 of the MNOS chip 13 is supported by the leads 17 and 18 that support the die pad 14 of the MNOS chip 13 and the MNOS side. It is supported by the fishtail 19 of.

又、本実施例の特徴となる第二点は、2つのダイパッド
12.14は電気的に接続された状態ではないので、そ
れぞれの半導体チップ11.13の基板の電位が異って
いる場合でも問題ない。故に、それぞれの半導体チップ
11.13が全く異った半導体製造工程であっても問題
ない。
The second feature of this embodiment is that the two die pads 12.14 are not electrically connected, so even if the potentials of the substrates of the respective semiconductor chips 11.13 are different. no problem. Therefore, there is no problem even if the respective semiconductor chips 11 and 13 are manufactured in completely different semiconductor manufacturing processes.

又、本実施例の特徴となる第三点は、形状に特徴を持っ
たリード2lを介してCMOSチップ11内の端子13
とMNOSチップ13内の端子24をワイヤー25.2
6によって接続可能である。
The third feature of this embodiment is that the terminals 13 in the CMOS chip 11 are
and connect the terminal 24 in the MNOS chip 13 to the wire 25.2
6 can be connected.

この接続によって、外観的には一つの機能ブロックとし
て、CMOSチップ11がMNOSチップl3を有して
いるのと同等の扱い方ができる。
This connection allows the CMOS chip 11 to be treated as one functional block in the same way as if the CMOS chip 11 had an MNOS chip 13.

以上の本実施例の特徴となる三点を考慮し、同様の要領
で、例えばシリコン基板から成る半導体チップとGaA
s等の化合物半導体基板から成る半導体チップを組み合
せることも可能である。
Considering the above three features of this embodiment, a semiconductor chip made of, for example, a silicon substrate and a GaA
It is also possible to combine semiconductor chips made of compound semiconductor substrates such as s.

又、リードの形状については、第2図の本発明の第2の
実施例である樹脂封止型半導体装置の平面図である。第
2図は第1図で説明したC M O Sチップ11のダ
イバッド12をささえるリード15.16と、MNOS
チップ13のダイパッド14をささえるリード17.1
8をそれぞれのグイパッド12.14から切離し、従来
と同様の扱いができるリード27.28,29.30と
し、樹脂封止時に発生するダイパッド12.14に与え
る応力に対しては、リード及びダイパッドの裏面にフィ
ルム状のささえ31を装着することによって耐え得る構
造を有している。
The shape of the leads is shown in FIG. 2, which is a plan view of a resin-sealed semiconductor device according to a second embodiment of the present invention. FIG. 2 shows the leads 15 and 16 supporting the die pad 12 of the CMOS chip 11 explained in FIG.
Leads 17.1 supporting die pad 14 of chip 13
8 is separated from each of the die pads 12.14 to create leads 27.28, 29.30 that can be handled in the same way as before. It has a durable structure by attaching a film-like support 31 to the back surface.

発明の効果 本発明によれば、複数の半導体チップを設けるためのダ
イバッドを同一樹脂封止容器内に設けたことにより、単
数の半導体チップでは実現が困難だった機能及び特性の
共有を外観上容易にでき、樹脂封正によるコストの低減
も可能にしている。
Effects of the Invention According to the present invention, by providing die pads for installing a plurality of semiconductor chips in the same resin sealing container, it is easy to share functions and characteristics that are difficult to achieve with a single semiconductor chip. It also makes it possible to reduce costs by resin sealing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例の樹脂封止型半導体装置
の平面図、第2図は本発明の第2の実施例の樹脂封止型
半導体装置の平面図、第3図は従来の樹脂封止型半導体
装置の平面図、第4図は従来の樹脂封止型半導体装置の
外観図である。
FIG. 1 is a plan view of a resin-sealed semiconductor device according to a first embodiment of the present invention, FIG. 2 is a plan view of a resin-sealed semiconductor device according to a second embodiment of the present invention, and FIG. A plan view of a conventional resin-sealed semiconductor device, and FIG. 4 is an external view of the conventional resin-sealed semiconductor device.

Claims (1)

【特許請求の範囲】[Claims] 複数の半導体チップを載置する複数のダイパッドと、前
記複数の半導体チップの端子間を中継してワイヤボンド
する中継リードとを備えたリードフレームを用い、前記
複数チップを含んで樹脂封止された半導体装置。
A lead frame including a plurality of die pads on which a plurality of semiconductor chips are mounted and a relay lead for relaying and wire bonding between terminals of the plurality of semiconductor chips is used, and the plurality of chips are sealed with resin. Semiconductor equipment.
JP2014156A 1990-01-23 1990-01-23 Semiconductor device Pending JPH03218059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014156A JPH03218059A (en) 1990-01-23 1990-01-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014156A JPH03218059A (en) 1990-01-23 1990-01-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH03218059A true JPH03218059A (en) 1991-09-25

Family

ID=11853293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014156A Pending JPH03218059A (en) 1990-01-23 1990-01-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH03218059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349233A (en) * 1992-04-20 1994-09-20 Kabushiki Kaisha Toshiba Lead frame and semiconductor module using the same having first and second islands and three distinct pluralities of leads and semiconductor module using the lead frame
US5598038A (en) * 1993-11-11 1997-01-28 Nec Corporation Resin encapsulated semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349233A (en) * 1992-04-20 1994-09-20 Kabushiki Kaisha Toshiba Lead frame and semiconductor module using the same having first and second islands and three distinct pluralities of leads and semiconductor module using the lead frame
US5598038A (en) * 1993-11-11 1997-01-28 Nec Corporation Resin encapsulated semiconductor device

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