JPH03215949A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to modify easily the internal circuits of a semiconductor chip which is sealed, the number of leads, which are linked to the internal circuits, and the arrangement of the leads conforming to the number of the electrodes of the chip and the arrangement of the electrodes by a method wherein a film carrier comprising the chip is sealed in the interior of a resin along with the surface part, on which the carrier and the chip are mounted, of a substrate. CONSTITUTION:A film carrier 20 constituted by connecting electrodes 12 of a semiconductor chip 10 to internal circuits 30 is mounted on the surface of an insulating substrate 50 along with the chip 10, pads 32 are connected to lead 60 heads, which project on the surface of the substrate 50, of leads 60 provided in such a way as to penetrate the substrate 50 and at the same time, the carrier 20 comprising the chip 10 is sealed in the interior of a resin 80 along with the surface part of the substrate 50 to constitute a device. Thereby, the circuits 30 of the chip, the number of the leads, which are linked to the circuits 30, and the arrangement of the leads can be easily modified conforming to the number of the electrodes of the chip, which is sealed, and the arrangement of the electrodes.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a versatile semiconductor device in which a semiconductor chip is sealed inside a resin.

[Prior Art] As a semiconductor device similar to the above-mentioned device, there is conventionally a device in which a semiconductor chip is enclosed in a resin-made PGA (pin grid array) package.

In this device, the internal circuit that connects the external device connection leads and the electrodes of the semiconductor chip is formed by etching the copper foil adhered to the surface of the resin substrate that forms the package body, or by using polyimide film. After forming an internal circuit on the copper foil adhered to the surface by etching, the internal circuit is peeled off from the surface of the polyimide film and is irremovably embedded inside the resin that forms the package body. They are preparing for the possibility that they will not be able to leave easily.

Further, a lead for connecting an external device is partially embedded in the resin forming the package body so that it cannot be easily removed from the package body.

[Problems to be Solved by the Invention] Incidentally, with the recent increase in the types of semiconductor chips, that is, the increase in the number of semiconductor chips with different numbers of electrodes and electrode arrangements, the internal circuits of semiconductor devices have changed accordingly. It has become desirable to have a versatile semiconductor device in which the number and arrangement of leads connected thereto can be easily changed.

However, in the semiconductor device described in Section 2, as mentioned above,
The internal circuit and leads are provided in the package body so that they cannot be easily removed, and by matching the number and arrangement of electrodes of the semiconductor chip sealed inside, the number and arrangement of the internal circuit and leads connected to it can be easily adjusted. could not be changed to .

The present invention has been made in view of these problems, and it is possible to easily adjust the number and arrangement of internal circuits and leads connected to the internal circuits according to the number and arrangement of electrodes of a semiconductor chip enclosed in a semiconductor device. The purpose of the present invention is to provide a versatile semiconductor device that can be changed.

[Means for Solving the Problems] For the above purpose, the semiconductor device of the present invention is a film carrier comprising an internal circuit and a pad connected to the insulating film, and an electrode of a semiconductor chip is attached to the internal circuit. A film carrier formed by the connection is mounted on the surface of an insulating substrate together with the semiconductor chip, the pad is connected to a lead head portion of a lead provided by penetrating the substrate and protruding from the substrate surface, and the semiconductor chip is It is characterized in that the film carrier containing the substrate is sealed inside the resin together with the surface portion of the substrate.

Further, in the semiconductor device of the present invention having the above structure, it is preferable that the insulating film or the insulating substrate of the film carrier below the internal circuit is provided with a ground layer. At the same time, the lead feet protruding from the back surface of the insulating substrate are formed short, and solder bumps are formed around the lead feet, or the lead feet protruding from the back surface of the insulating substrate are formed long. This is preferred.

[Function] ] The semiconductor device having the above two configurations includes a film carrier having an internal circuit connecting the electrodes of the semiconductor chip and a band connected thereto, and a lead connecting the pad connected to the internal circuit of the film carrier. The insulating substrate and the insulating substrate are each formed separately.

Therefore, a plurality of large and small film carriers are provided with various numbers of internal circuits and pads connected to them in various arrangements, and an insulating substrate is provided with a large number of leads in a lattice shape. Select a film carrier that matches the number and arrangement of electrodes of a semiconductor chip to be encapsulated in a semiconductor device, connect the electrodes of the semiconductor chip to the internal circuit of the film carrier, and attach the film carrier together with the semiconductor chip to the insulating substrate. A film carrier containing a semiconductor chip as described in 2 above is mounted on the surface and a plurality of pads connected to the internal circuit of the film carrier are respectively connected to all or part of a number of lead heads protruding from the surface of the insulating substrate. By encapsulating the insulating substrate together with the surface portion inside the resin, it is possible to form a semiconductor device in which semiconductor chips having various numbers of electrodes and electrode arrangements are encapsulated.

Alternatively, a plurality of film carriers having various numbers of internal circuits and pads connected thereto in various arrangements, and a plurality of insulating substrates having various numbers of leads in various arrangements are provided, and the film Select a film carrier and an insulating substrate that match the number and arrangement of electrodes of a semiconductor chip to be enclosed in a semiconductor device from the carrier and insulating substrate, and connect the electrodes of the semiconductor chip to the internal circuit of the selected film carrier. At the same time, the film carrier is mounted together with the semiconductor chip on the surface of the selected insulating substrate, and the plurality of pads connected to the internal circuit of the film carrier are mounted on all or all of the plurality of lead heads protruding from the surface of the insulating substrate. By connecting the film carrier containing the semiconductor chip to the inside of the resin together with the surface portion of the insulating substrate, it is possible to create a semiconductor device in which semiconductor chips having various numbers of electrodes and electrode arrangements are encapsulated. Can be formed.

In addition, in semiconductor devices that have a ground layer on the insulating film or insulating substrate of the film carrier below the internal circuit, it is possible to form the internal circuit on a microstrip line to efficiently transmit high-frequency signals. can.

[Example] Next, embodiments of the present invention will be described with reference to the drawings.

1 and 2 show a preferred embodiment of the semiconductor device of the present invention, which encapsulates a semiconductor chip having a large number of electrodes. FIG. 1 shows an end view taken along line A-A in FIG. 1; The embodiment shown in this figure will be described below.

In the figure, 10 is a semiconductor chip having a large number of electrodes 12 in a predetermined arrangement, and a predetermined electronic circuit (
(not shown).

Reference numeral 20 denotes a film carrier in which an insulating film 22 is provided with a large number of intricate internal circuits 30 and pads 32 connected thereto in a predetermined arrangement according to the semiconductor chip 10 having a large number of electrodes. This film carrier 2
0, as shown in FIGS. 3 and 4, for example, an insulating film 22 such as a polyimide film, an internal circuit 30 formed by etching copper foil adhered to the surface of the film, and a pad 32 connected thereto. It consists of an internal circuit 30 whose surface is plated with gold or the like, and a pad 32 connected thereto.

As shown in FIG. 4, this film carrier 20 is provided with a ground layer 34 made of copper foil or the like on the back surface of the insulating film 22 below the internal circuit 30 or inside it (the back surface is shown in the figure). , the internal circuit 30 is formed into a microstrip line that can efficiently transmit high frequency signals. Note that in the case of transmitting a low frequency signal to the internal circuit 30, the ground layer 34 may not be provided. In addition, as shown in FIG.
The ground layer portion 34a immediately below is removed in a circular 8-shape or the like so that a lead, which will be described later and is connected to the pad 32, does not come into contact with the ground layer 34.

Further, as shown in FIGS. 3 and 4, this film carrier 20 is provided with a through hole 40 that penetrates the pad 32 and the insulating film 22 directly below it, and has a rectangular or similar shape in the center. A transparent window 42 is provided, and the tip of the internal circuit 30 protrudes inside the window 42. Then, the electrodes 12 around the surface of the corresponding semiconductor chip 10 or at the center of the surface (in the figure, it is shown as the surface periphery) are connected to the tip of the internal circuit 30 by thermocompression bonding or the like.

50 is a rectangular flat insulating substrate made of glass epoxy resin, ceramic, or the like. This insulating substrate 50
As shown in FIGS. 5 and 6, a large number of metal leads 60 are passed through the substrate 50 in a lattice pattern at a predetermined pitch on all sides except for the central portion 50a where the semiconductor chip 10 is mounted. A lead head 60a and its foot 60b protrude from the front and back surfaces of the board 50, respectively.

The film carrier 2 is formed by connecting the electrode 12 of the semiconductor chip to the tip of the internal circuit 30 on the surface of the insulating substrate 50.
0 is mounted together with the semiconductor chip 10.

In FIGS. 1 and 2, the semiconductor chip 10 is positioned below the internal circuit 30 to which the electrodes 12 are connected, and is mounted on the surface of the insulating substrate 50, so that the semiconductor chip 10 is tightly attached to the surface of the insulating substrate 50. This allows the heat generated by the semiconductor chip 10 during operation to be efficiently dissipated to the outside through the insulating substrate 50. However, in some cases, on the contrary, as shown in FIG. may be mounted on the surface of the insulating substrate 50 so as to be located on both sides of the internal circuit 20. Furthermore, as described above, when the semiconductor chip IO is mounted in close contact with the surface of the insulating substrate 50,
A heat sink (not shown) made of metal or the like may be embedded in the insulating substrate 50 portion on which the semiconductor chip 10 is mounted to improve the heat dissipation performance of the insulating substrate 50 portion.

At the same time, a large number of lead heads 60a protruding from the surface of the insulating substrate 50 are all inserted into the plurality of through holes 40 of the film carrier, respectively. Then, the lead head 60a is soldered using solder 70 to a pad 32 connected to the internal circuit 30 of the film carrier.

Note that the lead head 60a and the pad 32 may be connected using a conductive adhesive or the like, or by press-fitting the lead head 60a into a through hole 40 provided in the pad 32. You can also

Alternatively, instead of providing the through hole 40, a pad is provided on the back surface of the insulating film 22 of the film carrier instead of on the surface, and the lead head 60a is soldered to the pad, so that the lead 60 can be inserted through the pad. Then, the pad may be connected to the internal circuit 30 of the film carrier 20 that extends through the insulating film 22.

Furthermore, the ground layer 34 provided on the insulating film 22 of the film carrier may be directly connected to the lead head 60a constituting the ground terminal of the insulating substrate 50 by soldering or the like, or the ground layer 34 of the film carrier 20 may be or indirectly connected to the lead head 60a forming the ground terminal through the internal circuit 30 forming the ground terminal, or via a ground circuit (not shown) provided in the film carrier 20 separately from the internal circuit 30. "-" is connected to the lead head 60a that constitutes the ground terminal.

Note that if the film carrier 20 is not provided with the ground layer 34, it goes without saying that it is not necessary.

Here, if the film carrier 20 is not provided with the ground layer 34, a ground layer made of copper foil or the like for forming the internal circuit 30 in the form of a microstrip line is provided on the surface or inside of the insulating substrate 50 below the internal circuit 30. A layer (not shown) may also be provided. Then, the ground layer may be connected to the lead 60 that constitutes the ground terminal of the insulating substrate 50.

Further, the periphery of the film carrier 20 containing the semiconductor chip 10 mounted on the surface of the insulating substrate 50 is covered with a resin 80 such as a synthetic resin.
The semiconductor chip 10 and film carrier 20 are sealed inside the resin 80 along with the surface portion of the substrate 50.

Note that in order to more airtightly seal the semiconductor chip 10 inside the resin 80, the sides of the insulating substrate 50 and the like may also be covered with the resin 80.

Further, in the illustrated embodiment, as shown in an enlarged end view in FIG. 8, the lead foot portions 60b protruding from the back surface of the insulating substrate 50 are formed in short lengths, and around the lead foot portions 60b, Solder bumps 72 are formed by depositing solder 70 in a substantially hemispherical shape. Then, the lead leg portion 60
b is soldered to a pad (not shown) connected to a circuit on the board (not shown) on the surface of a board for mounting a semiconductor device (not shown) using solder bumps 72, and the semiconductor device is surface mounted on the board. I'm trying to make it possible.

As shown in FIG. 7, the lead foot portions 60b protruding directly from the insulating substrate 50 are formed to have a long length, and the lead foot portions 60b are attached to a substrate for mounting a semiconductor device (not shown).
The semiconductor device may be mounted on the board by soldering or inserting it into a pad or socket (not shown) with a hole connected to the circuit on the front board.

The semiconductor device shown in FIGS. 1 and 2 is constructed as follows.

FIG. 9 shows a preferred embodiment of the semiconductor device of the present invention, which is formed by enclosing a semiconductor chip having a small number of electrodes, and specifically shows a partially cutaway view of the semiconductor device.

The embodiment shown in this figure will be described below.

In the semiconductor device shown in the figure, the film carrier 20 is
is formed one size smaller than the surface of the insulating substrate 50, and a small number of internal circuits 3 are formed on the film carrier 20.
0 and pads 32 connected thereto in a predetermined arrangement. The electrodes 12 of the semiconductor chip are connected to the tips of the internal circuits 30, and a plurality of pads 32 connected to the internal circuits 30 of the film carrier are connected to a portion of a large number of lead heads 60a protruding from the surface of the insulating substrate 50 ( In the figure, they are connected to the lead heads (in the figure) that protrude inside the surface of the insulating substrate.

The rest of the structure is the same as the previously described semiconductor device shown in FIGS. 1 and 2.

FIG. 10 shows another preferred embodiment of the semiconductor device of the present invention, which similarly includes a semiconductor chip having a small number of electrodes, and specifically shows a partially cutaway plan view thereof. The embodiment shown in this figure will be described below.

In the semiconductor device shown in the figure, the film carrier 20 is formed to have the same size as the surface of the insulating substrate 50, and in order to accommodate the semiconductor chip 10 having a small number of electrodes, the film carrier 20 has a small number of internal circuits 30 and pads connected thereto. 32 in a predetermined arrangement. And its internal circuit 30
The electrode 12 of the semiconductor chip is connected to the tip, and
A plurality of pads 32 connected to 30 in the internal circuit of the film carrier are each connected to a part of a large number of lead heads 60a protruding from the surface of the insulating substrate 50 (in the figure, the lead heads protruding to the outside of the surface of the insulating substrate). .

Further, as shown in FIG. 10, the lead head 60a that is not connected to the pad 32 is inserted through the pad 32 so that a part of the lead head 60a can be accurately connected to the pad 32 connected to the internal circuit 30 of the film carrier. An insertion hole 40a is provided on the surface of the insulating film 22 of the film carrier, and a lead head 60 that is not connected to the pad 32 is provided in the insertion hole/loa.
A is inserted.

The other parts are formed in the same manner as the previously described semiconductor device shown in FIGS. 1 and 2.

Note that in the above semiconductor device, the film carrier 20
Instead of providing the insertion hole 40a, the lead head 60a that is not connected to the pad 32 may be cut out. However, in the case of the above-mentioned film carrier in which a pad is provided behind the insulating film 22 of the film carrier and the lead head 60a is connected to the pad, the -L marking insertion hole 40a is formed on the surface of the insulating film 22. It goes without saying that there is no need to provide a lead head 60a or to cut out the lead head 60a.

11 and 12 show another preferred embodiment of the semiconductor device of the present invention, which encapsulates a semiconductor chip with a small number of electrodes. The figure shows a DD end view of FIG. The embodiment shown in this figure will be described below.

In the semiconductor device shown in the figure, as shown in FIGS. 5 and 6,
Instead of the previously described insulating substrate 50 equipped with a large number of leads 60,
An insulating substrate 500 as shown in FIGS. 13 and 14 is used, which has a small number of leads 60 arranged in a row around the four sides. Then, on the surface of the insulating substrate 500, a film carrier 20 is provided with a small number of internal circuits 30 and pads 32 connected thereto in accordance with the semiconductor chip 10 having a small number of electrodes.
A film carrier 20 having the same size as the surface of the substrate 500 with the electrode 12 of the semiconductor chip connected to the tip of the internal circuit 30 is mounted together with the semiconductor chip 10, and a plurality of film carriers connected to the internal circuit 30 of the film carrier are mounted. The pads 32 are respectively connected to all of the plurality of lead heads 60a protruding from the surface of the insulating substrate 500.

The rest of the structure is the same as the previously described semiconductor device shown in FIGS. 1 and 2.

In this semiconductor device, an insulating substrate 500 having a small number of bonds 60 is used in conjunction with a film carrier 20 having a small number of internal circuits 3o. The film carrier 20 has an insertion hole 40a through which the unconnected lead head 60a is inserted.
Lead head 60a that is not connected to the pad 32 or connected to the pad 32
There is no need to remove it.

[Effects of the Invention] As explained above, according to the semiconductor device of the present invention, the semiconductor chip can be mounted on the surface of an insulating substrate having a large number of leads in accordance with the number of electrodes and the arrangement of the electrodes of the semiconductor chip enclosed in the semiconductor device. You can change the film carrier to a large or small film carrier that has a predetermined number of internal circuits and pads connected to them in a predetermined arrangement, or change the film carrier to match the number and arrangement of electrodes of a semiconductor chip to be encapsulated in a semiconductor device. Changing the carrier to a film carrier equipped with a predetermined number of internal circuits and pads connected thereto in a predetermined arrangement,
Semiconductor devices in which semiconductor chips with various numbers of electrodes and electrode arrangements are encapsulated by changing the insulating substrate to an insulating substrate equipped with a predetermined number of leads in a predetermined arrangement that matches the film carrier. can be easily formed.

Therefore, by using the semiconductor device of the present invention, it is possible to produce a semiconductor device that is encapsulated with various semiconductor chips for high-variety, low-volume production.
That is, it becomes possible to provide a versatile semiconductor device easily and quickly.

Further, according to the semiconductor device of the present invention, when manufacturing the semiconductor device, the tip of the internal circuit is made to protrude to the inside of the window of the film carrier, and the electrodes of the semiconductor chip are connected to the protruded internal circuit without using wires. , can be connected directly.

Therefore, the work of connecting the internal circuits of the semiconductor device and the electrodes of the semiconductor chip during manufacture of the semiconductor device can be greatly facilitated and speeded up.

[Brief explanation of drawings]

FIG. 1 is a partially cutaway view of a semiconductor device of the present invention, which encapsulates a semiconductor chip with a large number of electrodes, and FIG.
-A end view, FIG. 3 is a partially omitted plan view of the film carrier of the semiconductor device in FIG. 1, FIG. 4 is a B-B end view of the semiconductor device in FIG. Top view of the insulating substrate,
6 is a CC end view of FIG. 5, FIG. 7 is a front end view showing another embodiment of the semiconductor device of the present invention, and FIG. 8 is a partially enlarged end view of the semiconductor device of FIG. 9 is a partially broken view of a semiconductor device of the present invention in which a semiconductor chip with a small number of electrodes is encapsulated, and FIG. 10 is a partially broken view of a semiconductor device of the present invention in which a semiconductor chip with a small number of electrodes is encapsulated. A partially cutaway plan view of a semiconductor device; FIG. 11 is a partially cutaway top view of another semiconductor device of the present invention in which a semiconductor chip with a small number of electrodes is enclosed;
Figure 12 is a D-D diagram of Figure 11, Figure 13 is a diagram of Figure 11.
Figure 1 is a plan view of the insulating substrate of the semiconductor device shown in Figure 1.
FIG. 3 is an end view taken along line E-E in FIG. 3; 10... Semiconductor chip, 12... Electrode, 20...
Film carrier, 30... Internal circuit, 32... Pad, 34... Ground layer, 40... Through hole, 50,
500... Insulating substrate, 60... Lead, 70...
Solder, 72...Solder bump, 80...Resin. <J -295- Fig. 7 Fig. 8 Fig. 9 Fig. 11 Fig. 13 Fig. 12 Fig. 14

Claims (1)

[Claims] 1. A film carrier comprising an insulating film, an internal circuit, and a pad connected to the internal circuit, in which an electrode of a semiconductor chip is connected to the internal circuit. the pads are connected to the lead heads protruding from the substrate surface of the leads provided by penetrating the substrate, and the film carrier containing the semiconductor chips is mounted together with the surface portion of the substrate on which the semiconductor chips are mounted. A semiconductor device sealed inside a resin. 2. The semiconductor device according to claim 1, further comprising a ground layer on the insulating film or the insulating substrate of the film carrier below the internal circuit. 3. The semiconductor device according to claim 1 or 2, wherein the lead foot portions protruding from the back surface of the insulating substrate are formed short, and solder bumps are formed around the lead foot portions. 4. The semiconductor device according to claim 1 or 2, wherein the lead foot portions protruding from the back surface of the insulating substrate are formed in a long length.