JPH0321090A - Plane light emitting type semiconductor laser - Google Patents
Plane light emitting type semiconductor laserInfo
- Publication number
- JPH0321090A JPH0321090A JP15548989A JP15548989A JPH0321090A JP H0321090 A JPH0321090 A JP H0321090A JP 15548989 A JP15548989 A JP 15548989A JP 15548989 A JP15548989 A JP 15548989A JP H0321090 A JPH0321090 A JP H0321090A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- heat sink
- active layer
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 230000010355 oscillation Effects 0.000 abstract description 5
- 238000010276 construction Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000005253 cladding Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、エピタキシャル層の積層方向に共振方向が平
行である面発光型半導体レーザ（以下面発光レーザとい
う）に関し、特に放熱機構を備えた面発光レーザに関す
るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a surface-emitting semiconductor laser (hereinafter referred to as a surface-emitting laser) whose resonance direction is parallel to the stacking direction of epitaxial layers, and particularly relates to a surface-emitting semiconductor laser (hereinafter referred to as a surface-emitting laser) that has a heat dissipation mechanism. This invention relates to surface emitting lasers.
基板側の反射鏡として半導体多層膜を用いてなる面発光
レーザが公知である（１９８８，秋季応用物理７ｐ−Ｚ
Ｃ−ｉ２）。このような面発光レーザでは、主な発熱部
である活性領域からの熱を放散するための機構として、
ヒートシンクを融着させた構造を有することが一般的で
ある。A surface emitting laser using a semiconductor multilayer film as a reflector on the substrate side is known (1988, Autumn Applied Physics 7p-Z
C-i2). In such surface emitting lasers, the mechanism for dissipating heat from the active region, which is the main heat generating part, is as follows:
It is common to have a structure in which a heat sink is fused.
第３図は放熱機構を備えた従来の面発光レーザの構造を
示す断面図であり、図中１は基板を示す。FIG. 3 is a cross-sectional view showing the structure of a conventional surface emitting laser equipped with a heat dissipation mechanism, and numeral 1 in the figure indicates a substrate.
基Ｆｉｌ上番こは、バンファ層２、反射鏡として作用す
る半導体多層膜４、第１クラソド層５がこの順に積層さ
れている。第１クラソド層５上には、活性層６及び第２
クラッド層７からなるメサ部が形成されており、このメ
サ部を埋込む態様にて、第１クラソドＮ５上に、第１電
流ブロソク層８及び第２電流ブロソク層９がこの順に形
成されている。On the top of the base film, a buffer layer 2, a semiconductor multilayer film 4 acting as a reflecting mirror, and a first cladding layer 5 are laminated in this order. On the first clathodic layer 5, an active layer 6 and a second
A mesa portion consisting of a cladding layer 7 is formed, and a first current blocking layer 8 and a second current blocking layer 9 are formed in this order on the first cladding N5 so as to bury this mesa portion. .
第２クラッド層７及び第２電流ブロンク層９上には電流
通路層１０が積層されている。メサ部が形成されている
領域の電流通路層１０上面には、反射鏡１４が形成され
ており、この反則鏡Ｉ４を囲む態様にて、電流通路層１
０上に、コンタク１・層１１及び電極１２がこの順に形
成されている。基板１の下面にはもう一方の電極１３が
華着形成されており、電極１３には融着材１６によりＳ
ｉ， Ｃｕ等からなるヒー１・シンク１５が融着されて
いる。木例では、基板側にヒトシンク１５を融着させて
いる。A current passage layer 10 is laminated on the second cladding layer 7 and the second current bronch layer 9. A reflecting mirror 14 is formed on the upper surface of the current passage layer 10 in the region where the mesa portion is formed, and the current passage layer 14 surrounds the reflection mirror I4.
0, a contact 1, a layer 11, and an electrode 12 are formed in this order. The other electrode 13 is formed on the lower surface of the substrate 1, and the electrode 13 is bonded with S by a fusing material 16.
Heater 1 and sink 15 made of Cu, etc. are fused together. In the wooden example, the human sink 15 is fused to the substrate side.
第４図は放熱機構を備えた従来の別の面発光レーザの構
造を示す断面図であり、図中第３図と同番号を付した部
分は同一または相当部分を示す。FIG. 4 is a cross-sectional view showing the structure of another conventional surface-emitting laser equipped with a heat dissipation mechanism, in which parts with the same numbers as those in FIG. 3 indicate the same or equivalent parts.
図中２４はウェハ表面側の反則鏡として作用する半導体
多層膜、２７はキャンプ層である。この例では、ウェハ
の表面側にヒー１・シンクを融着させた赦熱機構を備え
ている。In the figure, 24 is a semiconductor multilayer film that acts as an anti-reflection mirror on the wafer surface side, and 27 is a camp layer. In this example, a heat absorbing mechanism is provided in which a heat sink is fused to the front side of the wafer.
第３図に示す構造を有する面発光レーザでは、ウェハ表
面から外部にレーザ光Ｌを出力できるように、基板側に
放熱機構を設けている。主な発熱部である活性領域（活
性層６）とヒー１・シンク１５との距離は、６０〜１０
０μｍ程度である。従ってしきい値電流が大きくて発熱
量が大きいような面発光レーザでは、十分な放熱動作が
行い難く、室温における連続発振を行なえなかった。In the surface emitting laser having the structure shown in FIG. 3, a heat dissipation mechanism is provided on the substrate side so that laser light L can be outputted from the wafer surface to the outside. The distance between the active region (active layer 6), which is the main heat generating part, and the heat sink 15 is 60 to 10
It is about 0 μm. Therefore, in a surface emitting laser that has a large threshold current and generates a large amount of heat, it is difficult to perform a sufficient heat dissipation operation, and continuous oscillation at room temperature cannot be performed.
一方、第４図に示す構造を有する面発光レーザでは、活
性領域（活性層６）とヒー１・シンク１５との距離を、
５μｍ程度以下に短縮できる。従って、発熱量が大きい
面発光レーザにあっても十分な放熱効果を得ることがで
き、室温における連続発振は可能である。ところがウェ
ハ表面からレーザ光を得られないので、素子分離が困難
であり、２次元への集積化または他の素子との集積化は
困難であった。On the other hand, in the surface emitting laser having the structure shown in FIG. 4, the distance between the active region (active layer 6) and the heat sink 15 is
It can be shortened to about 5 μm or less. Therefore, even with a surface emitting laser that generates a large amount of heat, a sufficient heat dissipation effect can be obtained, and continuous oscillation at room temperature is possible. However, since laser light cannot be obtained from the wafer surface, element separation is difficult, and two-dimensional integration or integration with other elements is difficult.
このように従来では、ウェハ表面からレーザ光を得るた
めには十分な放熱特性が得られず、また十分な放熱特性
を得るためにはウェハ表面からレーザ光が得られないと
いう状況であった。As described above, in the past, sufficient heat dissipation characteristics could not be obtained to obtain laser light from the wafer surface, and laser light could not be obtained from the wafer surface in order to obtain sufficient heat dissipation characteristics.
本発明はかかる事情に鑑みてなされたものであり、レー
ザ光をウェハ表面から得られると共に、放熱特性が良好
である面発光レーザを提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a surface emitting laser that can obtain laser light from the wafer surface and has good heat dissipation characteristics.
本発明の第１発明に係る面発光レーザは、半導体多層膜
，活性層を含むエピタキシャル層を基板上に積層形成し
てあり、前記半導体多層膜を基板側の反射鏡として用い
る面発光レーザにおいて、前記活性層に対応する部分の
前記基板が除去されて露出される前記エピタキシャル層
の表面に、ヒートシンクを融着してあることを特徴とす
る。A surface emitting laser according to a first aspect of the present invention is a surface emitting laser in which a semiconductor multilayer film and an epitaxial layer including an active layer are laminated on a substrate, and the semiconductor multilayer film is used as a reflecting mirror on the substrate side. A heat sink is fused to the surface of the epitaxial layer exposed when the substrate is removed in a portion corresponding to the active layer.
また本発明の第２発明に係る面発光レーザば、第１発明
において、露出された前記エピタキシャル層の表面と前
記ヒートシンクとの間に、金属膜が介在されていること
を特徴とする。Further, a surface emitting laser according to a second aspect of the present invention is characterized in that, in the first aspect, a metal film is interposed between the exposed surface of the epitaxial layer and the heat sink.
本発明では、活性層に対応する領域の基板が部分的に除
去され、露出したエピタキシャル層の表面にヒートシン
クが融着されている。従って、活性層とヒートシンクと
の距離は短い。また基板側にヒートシンクが設けられて
いて、ウェハ表面からレーザ光が得られる。In the present invention, the substrate in the region corresponding to the active layer is partially removed, and a heat sink is fused to the exposed surface of the epitaxial layer. Therefore, the distance between the active layer and the heat sink is short. A heat sink is also provided on the substrate side, and laser light can be obtained from the wafer surface.
以下、本発明をその実施例を示す図面に基づいて具体的
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は、本発明の第１発明に係る面発光レーザの構造
を示す断面図であり、図中１はｎ−ＧａＡｓ基板を示す
。基板１上にば、ｎ−ＧａＡｓバソファ層２、ｎ一エッ
チング停止層（例えばｎ−Ｇａｏ．ａ ／１１ｏ．ｎ
Ａｓ）３、反射鏡として作用するｎ−ＧａＡＩＡｓ／Ａ
ＩＡｓ半導体多層膜４、第１クラソド層（．ｎ−ＧａＡ
］Ａｓクラソド層）５がこの順に積層されている。第ｌ
クラソド層５上には、ｐ−ＧａＡｓ活性層６及び第２ク
ラソド層（ｐＧａＡｌ八Ｓクラソド層）７からなるメサ
部が形成されており、このメサ部を埋込む態様にて、第
１クラッド層５上に、第１電流ブロック層（ｐ−ＧａＡ
ＩＡＳ埋込み層）８及び第２電流ブロソク層（ｎ−Ｇａ
ＡＩＡｓ埋込みＪＷ）９がこの順に形成されている。第
２クラソド層７及び第２電流プロソクＮ９上には電流通
路ｊｉｌｏ （ｐ−ＧａＡＩＡｓ電流拡がり層）が積層
されている。メサ部が形成されている領域の電流通路層
１０上面には、反射鏡１４が形成されており、この反射
鏡１４を囲む態様にて、電流通路層■０上に、ｐ−Ｇａ
Ａｓコンタクト層１１及びｐ型電極１２がこの順に形成
されている。活性層６に対応する領域の基仮１及びバソ
ファ層２は除去されており、露出されたエノチング停止
層３の表面には、Ｓｉからなるヒー１・シンク１５がＩ
ｎからなる融着材１６にて融着されている。FIG. 1 is a sectional view showing the structure of a surface emitting laser according to a first aspect of the present invention, and 1 in the figure indicates an n-GaAs substrate. On the substrate 1, an n-GaAs bathophore layer 2, an n-etch stop layer (e.g. n-Gao.a/11o.n
As) 3, n-GaAIAs/A acting as a reflector
IAs semiconductor multilayer film 4, first clathode layer (.n-GaA
]As clathode layers) 5 are laminated in this order. No.l
A mesa portion consisting of a p-GaAs active layer 6 and a second cladding layer (pGaAl8S cladding layer) 7 is formed on the cladding layer 5, and the first cladding layer is buried in this mesa portion. 5, a first current blocking layer (p-GaA
IAS buried layer) 8 and second current blocking layer (n-Ga
AIAs embedded JW) 9 are formed in this order. A current path jilo (p-GaAIAs current spreading layer) is laminated on the second clad layer 7 and the second current path N9. A reflecting mirror 14 is formed on the upper surface of the current passage layer 10 in the region where the mesa portion is formed, and p-Ga
An As contact layer 11 and a p-type electrode 12 are formed in this order. The substrate 1 and the bathophore layer 2 in the region corresponding to the active layer 6 have been removed, and a heat sink 15 made of Si is formed on the exposed surface of the etching stop layer 3.
They are fused together using a fusion bonding material 16 made of n.
また、基板１の下面にはｎ型電極１３が形成されている
。Further, an n-type electrode 13 is formed on the lower surface of the substrate 1 .
このような構或の面発光レーザの製造工程につ／ いて説明する。Regarding the manufacturing process of a surface emitting laser with such a structure/ I will explain.
まず基板■上に、例えばＯＭＶｌ’Ｅ法を用いて、ハソ
ファ層２，エノチング停止層３，半導体多層膜４．第１
クラソド層５．活性層６．第２クランド層７を順次或長
させた後、選択ＬＰＩＥ法を用いて、第１，第２電流ブ
ロソク層８，９，電流通路層ｌＯコンタクト層１１を順
次或長させて活性層６を埋込む。コンタクト層１１の一
部を除去し、反剖鏡１４，電極ｌ２を形或する。その後
、活性層６に対応ずる部分の基板１及びバソファ層２を
エソチング除去し、露出したエソチング停止層３の表面
に、融着材１６を用いてヒートシンク１５を融着する。First, on the substrate (2), for example, the OMVl'E method is used to deposit the Hasofa layer 2, the enoting stop layer 3, the semiconductor multilayer film 4. 1st
Clasod layer 5. Active layer 6. After the second ground layer 7 is sequentially elongated, the active layer 6 is buried by sequentially elongating the first and second current blocking layers 8, 9 and the current passage layer 1O contact layer 11 using a selective LPIE method. It's crowded. A portion of the contact layer 11 is removed to form the anatomical mirror 14 and the electrode 12. Thereafter, portions of the substrate 1 and bathophage layer 2 corresponding to the active layer 6 are removed by ethoching, and a heat sink 15 is fused to the exposed surface of the etching stopper layer 3 using a fusing material 16.
最後に基板１の下面に電極１３を形或する。Finally, an electrode 13 is formed on the bottom surface of the substrate 1.
本例においてヒー１−シンク１５に使用するＳｉの熱伝
導率は１．５Ｗ／（Ｋ−ｃｍ）であって、ＧａＡｓの熱
伝導率（０．４７Ｗ／（Ｍ−ｃｍ） ）の約３倍である
。従ッテ、本発明の面発光レーザでは、第３図に示す従
来例に比して熱放射効果を大幅に増大でき、第４図に示
す従来例と同等な熱放散特性を実現でき、室温における
連続発振が可能である。In this example, the thermal conductivity of Si used for the heat sink 15 is 1.5 W/(K-cm), which is about three times the thermal conductivity of GaAs (0.47 W/(M-cm)). It is. In the surface emitting laser of the present invention, the heat radiation effect can be greatly increased compared to the conventional example shown in FIG. 3, and the same heat dissipation characteristics as the conventional example shown in FIG. Continuous oscillation is possible.
そして本発明では、第３図に示す従来例と同様に、基板
側にヒートシンクを設けているので、第１図に示すよう
に、レーザ光Ｌがウェハ表面から出力される。従って予
めウェハ表面上に電極パターンを形成しておくことによ
り、素子分離は容易であり、また２次元への集積化及び
他の素子との集積化は可能である。In the present invention, as in the conventional example shown in FIG. 3, a heat sink is provided on the substrate side, so that the laser beam L is output from the wafer surface as shown in FIG. Therefore, by forming an electrode pattern on the wafer surface in advance, device separation is easy, and two-dimensional integration and integration with other devices is possible.
第２図は本発明の第２発明に係る面発光レーザの構造を
示す断面図である。なお第２図において第ｌ図と同番号
を付した部分は同一部分を示す。FIG. 2 is a sectional view showing the structure of a surface emitting laser according to a second aspect of the present invention. Note that in FIG. 2, the parts with the same numbers as in FIG. 1 indicate the same parts.
第２発明では、露出されたエッチング停止層３の表面に
、例えばＣｒ， Ａｕを重ね合せた金属膜１７が蒸着形
成されており、この金属膜１７にＳｉからなるヒー１・
シンクｌ５がＩｎからなる融着材１６にて融着されてい
る。金属膜ｌ７は、露出された基板１の側面及びｐ型電
極１３にも形成されている。なお、金属膜１７は単一の
金属（例えばＡｕ）でもよい。In the second invention, a metal film 17 made of, for example, Cr and Au is deposited on the surface of the exposed etching stop layer 3, and a heat treatment layer 1 made of Si is formed on this metal film 17.
The sink 15 is fused with a fusion material 16 made of In. The metal film 17 is also formed on the exposed side surface of the substrate 1 and the p-type electrode 13. Note that the metal film 17 may be made of a single metal (for example, Au).
このような構造の面発光レーザを製造する際には、まず
第１発明例と同様に、基板にウエハを形成した後、活性
層６に対応する領域の基板ｌ及びバソファ層２を除去し
て一部のエソチング停止層３を露出させる。基板１下面
に電極１３を蒸着した後、電子ビーム舊着装置にて、露
出したエノチング停止層３の表面，基板１の側面，電極
１３の表面に金属層ｌ７を蒸着させる。なお、この製造
工程において、電極１３（例えば＾ｕ／Ｓｎ）と金属膜
１７とを同時に形成することとしてもよい。When manufacturing a surface emitting laser having such a structure, first, as in the first invention example, a wafer is formed on a substrate, and then the substrate l and bathophore layer 2 in the area corresponding to the active layer 6 are removed. A portion of the etch stop layer 3 is exposed. After depositing the electrode 13 on the lower surface of the substrate 1, a metal layer 17 is deposited on the exposed surface of the etching stopper layer 3, the side surface of the substrate 1, and the surface of the electrode 13 using an electron beam deposition device. Note that in this manufacturing process, the electrode 13 (for example, ^/Sn) and the metal film 17 may be formed at the same time.
この第２発明にあっても、前述の第１発明と同様な効果
を有することは勿論である。エソチング停止層３及び融
着材１６に対ずる金属膜１７の密着性は良好であり、よ
り効率良く、活性領域にて生した熱を外部に放散するこ
とができる。Of course, this second invention also has the same effects as the first invention described above. The adhesion of the metal film 17 to the etching stopper layer 3 and the fusion material 16 is good, and the heat generated in the active region can be dissipated to the outside more efficiently.
本実施例では、ｎ−ＧａＡｓ基板を使用したＧａＡｓ／
ＧａＡＩＡｓ系の面発光レーザについて説明したが、こ
れに限るものではない。つまりｐ一基板を用いてもよく
、また材料もＧａＡｓｌＧａ旧Ａｓ系以外にｎｒ−ｖ族
またはｎ−ｖｒ族半導体を使用してもよい。In this example, a GaAs/
Although a GaAIAs-based surface emitting laser has been described, the present invention is not limited to this. That is, a p-substrate may be used, and an nr-v group or n-vr group semiconductor may be used as the material other than the GaAslGa old As-based semiconductor.
また本実施例では、ヒートシンクとしてＳｉｓ融着材と
してＩｎを使用したが、他の材料を用いることとしても
よい。ヒー１・シンクとしては、Ａｕ， Ｃｕ，ダイヤ
モンド， ＣＢＮ， ＡＩＮ， ＳｉＣを使用でき、融
着材としては通常のＡｕ系融着材等を使用できる。Furthermore, in this embodiment, In is used as the Sis fusion bonding material for the heat sink, but other materials may be used. As the heat sink, Au, Cu, diamond, CBN, AIN, or SiC can be used, and as the welding material, a normal Au-based welding material or the like can be used.
更に本実施例では、埋め込み構造の面発光レーザを例と
して説明したが、他の構造の面発光レーザについても同
様の構戒をなし得ることは勿論である。Further, in this embodiment, a surface emitting laser having a buried structure has been described as an example, but it goes without saying that similar precautions can be taken for surface emitting lasers having other structures.
以上詳述した如く、基板側の反射膜として半導体多層膜
を用いる本発明の面発光レーザでは、主な発熱源である
活性領域（活性層）直下にヒートシンクを配置できるの
で、十分な放熱特性を得ることができて、室温における
連続発振が可能となり、しかもウェハ表面からレーザを
得ることができて、素子分離が容易である等、本発明は
優れた効果を奏する。As detailed above, in the surface emitting laser of the present invention using a semiconductor multilayer film as a reflective film on the substrate side, a heat sink can be placed directly under the active region (active layer) which is the main heat source, so sufficient heat dissipation characteristics can be achieved. The present invention has excellent effects such as continuous oscillation at room temperature, laser emission from the wafer surface, and easy element isolation.
第１図，第２図は本発明に係る面発光レーザの構造を示
す断面図、第３図，第４図は従来の面発光レーザの構造
を示す断面図である。
１・・・基板 ２・・・バノファ層 ３・・・エソチン
グ停止層 ４・・・半導体多層膜 ５・・・第１クラソ
ド層６・・・活性層 ７・・・第２クラソド層 ８・・
・第１電流ブロソク層 ９・・・第２電流ブロソク層
１０・・・電流通路層 １１・・・コンタクト層 １２
． １３・・・電極 １４・・・反射鏡 １５・・・ヒ
ートシンク １６・・・融着材 １７・・・金属膜
特 許 出 願 人 新技術開発事業団（外２名）1 and 2 are sectional views showing the structure of a surface emitting laser according to the present invention, and FIGS. 3 and 4 are sectional views showing the structure of a conventional surface emitting laser. DESCRIPTION OF SYMBOLS 1...Substrate 2...Vanofer layer 3...Ethoching stop layer 4...Semiconductor multilayer film 5...First clathode layer 6...Active layer 7...Second cladode layer 8...
・First current blocking layer 9...Second current blocking layer
10... Current passage layer 11... Contact layer 12
．． 13... Electrode 14... Reflector 15... Heat sink 16... Fusion material 17... Metal film patent Applicant: New Technology Development Corporation (2 others)
Claims (1)
板上に積層形成してあり、前記半導体多層膜を基板側の
反射鏡として用いる面発光型半導体レーザにおいて、 前記活性層に対応する部分の前記基板が除 去されて露出される前記エピタキシャル層の表面に、ヒ
ートシンクを融着してあることを特徴とする面発光型半
導体レーザ。 ２、露出された前記エピタキシャル層の表面と前記ヒー
トシンクとの間に、金属膜が介在されている請求項１記
載の面発光型半導体レーザ。[Scope of Claims] 1. A surface-emitting semiconductor laser in which an epitaxial layer including a semiconductor multilayer film and an active layer is laminated on a substrate, and the semiconductor multilayer film is used as a reflector on the substrate side, comprising: A surface emitting type semiconductor laser, characterized in that a heat sink is fused to a surface of the epitaxial layer exposed when the substrate is removed in a portion corresponding to the surface of the epitaxial layer. 2. The surface-emitting semiconductor laser according to claim 1, wherein a metal film is interposed between the exposed surface of the epitaxial layer and the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155489A JP2799328B2 (en) | 1989-06-16 | 1989-06-16 | Surface emitting semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155489A JP2799328B2 (en) | 1989-06-16 | 1989-06-16 | Surface emitting semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0321090A true JPH0321090A (en) | 1991-01-29 |
| JP2799328B2 JP2799328B2 (en) | 1998-09-17 |
Family
ID=15607165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1155489A Expired - Fee Related JP2799328B2 (en) | 1989-06-16 | 1989-06-16 | Surface emitting semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2799328B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164949A (en) * | 1991-09-09 | 1992-11-17 | Motorola, Inc. | Vertical cavity surface emitting laser with lateral injection |
| US5212702A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
| US5212701A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced optical confinement |
| US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
| US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
| JP2007529910A (en) * | 2004-03-19 | 2007-10-25 | アリゾナ ボード オブ リージェンツ | High output VCSEL with lateral mode control |
| JP2008513984A (en) * | 2004-09-22 | 2008-05-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Surface emitting semiconductor laser device and method for manufacturing surface emitting semiconductor laser device |
| JP2008305922A (en) * | 2007-06-06 | 2008-12-18 | Hamamatsu Photonics Kk | Semiconductor light-emitting element and its manufacturing method |
| WO2012014954A1 (en) | 2010-07-30 | 2012-02-02 | 富士フイルム株式会社 | Novel azo compound, aqueous solution, ink composition, ink for inkjet recording, inkjet recording method, ink cartridge for inkjet recording and inkjet recording |
| WO2023238429A1 (en) * | 2022-06-08 | 2023-12-14 | 株式会社村田製作所 | Vertical cavity surface emitting laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119282A (en) * | 1986-09-25 | 1988-05-23 | Res Dev Corp Of Japan | Semiconductor light emitting device structure |
-
1989
- 1989-06-16 JP JP1155489A patent/JP2799328B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119282A (en) * | 1986-09-25 | 1988-05-23 | Res Dev Corp Of Japan | Semiconductor light emitting device structure |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164949A (en) * | 1991-09-09 | 1992-11-17 | Motorola, Inc. | Vertical cavity surface emitting laser with lateral injection |
| US5212702A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output |
| US5212701A (en) * | 1992-03-25 | 1993-05-18 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced optical confinement |
| US5316968A (en) * | 1992-03-25 | 1994-05-31 | At&T Bell Laboratories | Method of making semiconductor surface emitting laser |
| US5348912A (en) * | 1992-03-25 | 1994-09-20 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced optical confinement |
| US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
| US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
| JP2007529910A (en) * | 2004-03-19 | 2007-10-25 | アリゾナ ボード オブ リージェンツ | High output VCSEL with lateral mode control |
| JP2008513984A (en) * | 2004-09-22 | 2008-05-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Surface emitting semiconductor laser device and method for manufacturing surface emitting semiconductor laser device |
| JP2008305922A (en) * | 2007-06-06 | 2008-12-18 | Hamamatsu Photonics Kk | Semiconductor light-emitting element and its manufacturing method |
| WO2012014954A1 (en) | 2010-07-30 | 2012-02-02 | 富士フイルム株式会社 | Novel azo compound, aqueous solution, ink composition, ink for inkjet recording, inkjet recording method, ink cartridge for inkjet recording and inkjet recording |
| WO2023238429A1 (en) * | 2022-06-08 | 2023-12-14 | 株式会社村田製作所 | Vertical cavity surface emitting laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2799328B2 (en) | 1998-09-17 |
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