JPH03207852A - Formation of thin silicon film - Google Patents
Formation of thin silicon filmInfo
- Publication number
- JPH03207852A JPH03207852A JP139290A JP139290A JPH03207852A JP H03207852 A JPH03207852 A JP H03207852A JP 139290 A JP139290 A JP 139290A JP 139290 A JP139290 A JP 139290A JP H03207852 A JPH03207852 A JP H03207852A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electron beam
- alloy containing
- evaporation material
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims 2
- 229910052710 silicon Inorganic materials 0.000 title claims 2
- 239000010703 silicon Substances 0.000 title claims 2
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 229910006295 Si—Mo Inorganic materials 0.000 claims abstract 2
- 229910006291 Si—Nb Inorganic materials 0.000 claims abstract 2
- 229910006728 Si—Ta Inorganic materials 0.000 claims abstract 2
- 229910006774 Si—W Inorganic materials 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 abstract description 9
- 239000000654 additive Substances 0.000 abstract description 8
- 230000000996 additive effect Effects 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 8
- 238000009835 boiling Methods 0.000 abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 abstract description 6
- 229910000676 Si alloy Inorganic materials 0.000 abstract description 2
- 238000007733 ion plating Methods 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電子ビーム加熱による真空蒸着およびイオンブ
レーティング法で、Ｓｉ薄膜を成膜する方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a Si thin film by vacuum evaporation using electron beam heating and ion blating.
［従来技術］
一般にＳｉ薄膜は、太陽電池や電子写真感光体，半導体
デバイス等の用途がある。また、Ｓｉ，Ｎ４やＳｉＯ２
，ＳｉＣ等のＳｉ化合物薄膜も絶縁膜，耐摩耗皮膜等の
用途に広くつかわれている。[Prior Art] Generally, Si thin films are used in solar cells, electrophotographic photoreceptors, semiconductor devices, and the like. Also, Si, N4 and SiO2
, SiC, and other Si compound thin films are also widely used for applications such as insulating films and wear-resistant coatings.
従来、これらの８１薄膜は、主にＣＶＤ法によって作成
されてきた。例えば特開昭６１−５６２８１号に見られ
る様なマイクロ波プラズマＣＶＤ法，特開昭６１−６１
５１号に見られる光ＣＶＤ法，特開昭６１−４７２２６
号に見られるグロー放電ＣＶＤ法等が挙げられる。Conventionally, these 81 thin films have been mainly created by the CVD method. For example, the microwave plasma CVD method as seen in JP-A-61-56281, JP-A-61-61
Optical CVD method seen in No. 51, JP-A-61-47226
Examples include the glow discharge CVD method seen in No.
一方、ＰＶＤ法よるＳｉ薄膜の作成法には、特開昭６１
−４８５６４号に見られる様に、マグネトロンスバッタ
ー法による成膜も成されている。On the other hand, there is a method for creating Si thin films using the PVD method, published in Japanese Unexamined Patent Publication No. 61
As seen in No. 48564, film formation has also been carried out by the magnetron batter method.
［発明が解決しようとするａｌｌ］
しかしながら、ＣｖＤ法によれば、成膜速度が数〜数１
０λ／ｓｅｃと遅く、限界があると思われる。[All to be solved by the invention] However, according to the CvD method, the film formation rate is several to several 1
It is slow at 0λ/sec and seems to have a limit.
また、Ｓｉ．．等の有毒ガスを原料としているため、そ
の取扱いが面倒であり、工業化する上でも安全の確保が
問題となる。Also, Si. ．． Because the raw materials are toxic gases such as
ＰＶＤ法によれば、有毒ガスを使用することがないので
安全上の問題点は解消されるが、スパッタリング法では
成膜速度が遅いという問題が依然として残る。電子ビー
ム加熱による真空蒸着法イオンブレーティング法ではあ
る程度の高速成膜が可能である。しかし、蒸発材として
Ｓｉを用いた場合、電子ビームの出力を高くしていくと
、るつぼ内のＳｉが沸騰を起こしてしまうため、Ｓｉ皮
膜の安定な成膜ができなくなってしまう。According to the PVD method, safety problems are solved because no toxic gas is used, but the problem with the sputtering method is that the film formation rate is slow. A certain degree of high-speed film formation is possible with the vacuum evaporation method and ion blating method using electron beam heating. However, when Si is used as the evaporator, increasing the output of the electron beam causes the Si in the crucible to boil, making it impossible to form a stable Si film.
本発明は上記のような問題点を解決するためになされた
もので、電子ビーム加熱による真空蒸着法，イオンプレ
ーティング法で、Ｓｌ薄膜を安定に成膜することを目的
とする。The present invention has been made to solve the above-mentioned problems, and its object is to stably form a Sl thin film by vacuum evaporation method using electron beam heating and ion plating method.
［課題を解決するための手段］
本発明では、電子ビーム加熱による真空蒸着法，もしく
はイオンブレーテイング法でＳｉを安定に成膜するため
に、蒸発材として高融点金属を含むＳｉ系合金を用いる
ことを特徴としている。蒸発材の組成は添加元素がＮｂ
の場合、７０ｖｔ％以上，Ｗでは５５ｖＬ％以上，Ｍｏ
では６８ｗＬ％以上，Ｔａでは６１ｖＬ％以上とする。[Means for Solving the Problems] In the present invention, in order to stably form a Si film by a vacuum evaporation method using electron beam heating or an ion blating method, a Si-based alloy containing a high melting point metal is used as an evaporator. It is characterized by The composition of the evaporator is that the additive element is Nb.
70vt% or more for W, 55vL% or more for Mo,
For Ta, it is 68 wL% or more, and for Ta, it is 61 vL% or more.
［作用］
本発明で、Ｎｂ，Ｗ，Ｍｏ，Ｔａの高融点金属を添加し
たＳｉ合金を蒸発材として用いることによって、電子ビ
ーム溶解したときの蒸発材の沸騰現象を押えている。[Function] In the present invention, by using a Si alloy to which high-melting point metals such as Nb, W, Mo, and Ta are added as the evaporator, the boiling phenomenon of the evaporator during electron beam melting is suppressed.
添加元素がＮｂ，Ｗ，ＭｏもしくはＴａでなければなら
ないのは、これらの元素の蒸気圧がＳｉよりも充分に低
いため、Ｓ１薄膜中への混入がごくわずかだからである
。The reason why the additive element must be Nb, W, Mo, or Ta is because the vapor pressure of these elements is sufficiently lower than that of Si, so that their mixing into the S1 thin film is extremely small.
添加元素がＮｂの場合、Ｎｂが７０ｖｔ％より少ないと
沸騰現象が生じてしまう。Ｎｂ添加量は７０ｗｔ％以上
ならば制限はないが、添加量が多すぎるとＳｉの蒸発の
効率が悪くなる。また、Ｎｂ添加量が多くなると蒸発材
の融点が高くなり、電子ビーム照射部しか溶解，蒸発が
起こらなくなる現象（ドリリング現象）が生じて好まし
くない。When the additive element is Nb, if the Nb content is less than 70vt%, a boiling phenomenon will occur. There is no limit to the amount of Nb added as long as it is 70 wt% or more, but if the amount added is too large, the efficiency of Si evaporation will deteriorate. Furthermore, when the amount of Nb added increases, the melting point of the evaporator increases, and a phenomenon (drilling phenomenon) occurs in which melting and evaporation occur only in the portion irradiated with the electron beam, which is undesirable.
従ってＮｂの添加量は７０ｖｔ％以上７５ｖｔ％以下が
好ましい。Therefore, the amount of Nb added is preferably 70 vt% or more and 75 vt% or less.
添加元素がＷの場合、Ｗが５５ｖｔ％より少ないと沸騰
現象が生じる。Ｎｂの場合と同様の理由で、Ｗの添加量
は５０ｖｔ％以上５５νｔ％以下が好ましい。When the added element is W, a boiling phenomenon occurs if W is less than 55vt%. For the same reason as in the case of Nb, the amount of W added is preferably 50vt% or more and 55vt% or less.
添加元素がＭｏ，Ｔａの場合についても、同様の理由で
、Ｍｏでは６８ｗｔ％以上７３ｖｔ％以・一下，Ｔａで
は６１ｗｔ％以上６６ｖｔ％以下が望ましい。When the additive elements are Mo and Ta, for the same reason, Mo is preferably 68 wt% or more and 73 vt% or less, and Ta is preferably 61 wt% or more and 66 vt% or less.
なお、上記説明では、Ｓｉに、Ｎｂ，Ｗ，Ｍｏもしくは
Ｔａを単独で添加した二元系合金の場合について説明し
たが、本発明の蒸発材は、本発明を目的を達成できる範
囲内で、他の金属成分を意図的若しくは不可避的に含有
するものでもよい。In addition, in the above description, the case of a binary alloy in which Nb, W, Mo or Ta is added alone to Si was explained, but the evaporator of the present invention may include the following: It may also contain other metal components intentionally or unavoidably.
さらに、本発明の蒸発材は、Ｓ１にＮｂ，Ｗ，Ｍｏ及び
Ｔａの群から選択された二種以上を添加した合金でもよ
い。この場合、本発明の目的を達成するために必要とす
る添加合金量を少なくすることができる。Furthermore, the evaporation material of the present invention may be an alloy in which two or more selected from the group of Nb, W, Mo, and Ta are added to S1. In this case, the amount of added alloy required to achieve the object of the present invention can be reduced.
［発明の実施例］ 以下に本発明の実施例を示す。[Embodiments of the invention] Examples of the present invention are shown below.
まず、真空蒸着装置の蒸発るつぼ内に蒸発材を設置した
後、真空室内をＩ Ｘ １ ０−’Ｔｏｒｒに排気した
。次に電子ビームの出力を５ｋｖ（５００ｍＡＸ１０ｋ
ｖ）で蒸発材の加熱を行ない、蒸発るつぼから約４０ｃ
ｍ離れた基板上へ威膜を行った。蒸発材の組成と電子ビ
ーム溶解時の蒸発材の沸騰現象およびドリリング現象を
表１に示す。蒸発材の沸騰現象は電子ビーム溶解時に蒸
発るつぼから溶湯のふきこぼれが激しいものをＸ，そう
でないものをＯとした。ドリリング現象については、電
子ビーム溶解時に蒸発るつぼの蒸発面全体が溶解したも
のをＯ，そうでないものを×とした。First, an evaporation material was placed in an evaporation crucible of a vacuum evaporation apparatus, and then the vacuum chamber was evacuated to IX10-'Torr. Next, increase the output of the electron beam to 5kv (500mAX10k
Heating the evaporation material with v), about 40c from the evaporation crucible.
The film was placed on a substrate 100 m away. Table 1 shows the composition of the evaporator and the boiling and drilling phenomena of the evaporator during electron beam melting. Regarding the boiling phenomenon of the evaporative material, a case where the molten metal boiled over from the evaporation crucible during electron beam melting was marked as "X", and a case where it was not marked as "O". Regarding the drilling phenomenon, a case in which the entire evaporation surface of the evaporation crucible was melted during electron beam melting was marked as O, and a case in which it was not was marked as ×.
以上の様にして戊膜したＳｉ皮膜の純度はいずれも９９
．９ｗｔ％以上であった。The purity of the Si film formed as described above is 99.
．． It was 9wt% or more.
以上のように、本発明によれば、電子ビーム加熱による
真空蒸着法、もしくはイオンブレーティング法で、Ｎｂ
，Ｗ，Ｔａ，Ｍｏ等の高融点金属を添加したＳｉ合金を
蒸発材として用いることによって、Ｓｉ薄膜を安定に成
膜することができる効果がある。As described above, according to the present invention, Nb
, W, Ta, Mo, and other high-melting-point metals are used as the evaporator, which has the effect of stably forming a Si thin film.
Claims (1)
量％以上のＷを含むＳｉ−Ｗ合金、６８重量％以上のＭ
ｏを含むＳｉ−Ｍｏ合金、及び６１重量％以上のＴａを
含むＳｉ−Ｔａ合金の群から選択された蒸発材を、電子
ビームで加熱蒸発せしめて、基板上に成膜するシリコン
薄膜の成膜方法。Si-Nb alloy containing 70% by weight or more of Nb, Si-W alloy containing 55% by weight or more of W, 68% by weight or more of M
Formation of a silicon thin film on a substrate by heating and evaporating an evaporation material selected from the group of Si-Mo alloy containing o and Si-Ta alloy containing 61% by weight or more of Ta using an electron beam. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP139290A JPH03207852A (en) | 1990-01-08 | 1990-01-08 | Formation of thin silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP139290A JPH03207852A (en) | 1990-01-08 | 1990-01-08 | Formation of thin silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03207852A true JPH03207852A (en) | 1991-09-11 |
Family
ID=11500221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP139290A Pending JPH03207852A (en) | 1990-01-08 | 1990-01-08 | Formation of thin silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03207852A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0969115A1 (en) * | 1996-05-17 | 2000-01-05 | United Technologies Corporation | Method of vacuum vaporization of metals |
-
1990
- 1990-01-08 JP JP139290A patent/JPH03207852A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0969115A1 (en) * | 1996-05-17 | 2000-01-05 | United Technologies Corporation | Method of vacuum vaporization of metals |
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