JPH03203365A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH03203365A JPH03203365A JP34282089A JP34282089A JPH03203365A JP H03203365 A JPH03203365 A JP H03203365A JP 34282089 A JP34282089 A JP 34282089A JP 34282089 A JP34282089 A JP 34282089A JP H03203365 A JPH03203365 A JP H03203365A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- circuit
- pads
- integrated circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特にパッド数、入出力
パッド位置、電源パッド位置およびチップサイズをそれ
ぞれ等しくして回路動作が異なる複数の半導体集積回路
を同一ウェハー上に作成した半導体集積回路に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to semiconductor integrated circuits, and in particular to semiconductor integrated circuits that have different circuit operations with the same number of pads, input/output pad positions, power supply pad positions, and chip sizes. This invention relates to semiconductor integrated circuits in which circuits are formed on the same wafer.
従来、この種の半導体集積回路は第3図に示す様に同一
ウェハー33上に作成された回路動作が異なる半導体集
積回路31.32を識別するために、回路動作が異なる
半導体集積回路31.32の各チップ内に半導体集積回
路31.32の品種番号あるいは英数字等から成る識別
記号34が設けられていた。Conventionally, as shown in FIG. 3, this type of semiconductor integrated circuit has been manufactured on the same wafer 33 in order to identify semiconductor integrated circuits 31 and 32 with different circuit operations. An identification symbol 34 consisting of a type number or alphanumeric characters of the semiconductor integrated circuit 31, 32 was provided in each chip.
上述した従来の半導体集積回路は各チップ内に設けられ
た半導体回路の品種番号あるいは英数字等から成る識別
記号により回路動作が異なる半導体集積回路の識別を行
なっているので、ウェノ・−段階でLSIテスタを使用
して同一ウェハー上に作成された回路動作が異なる複数
の半導体集積回路を電気的に試験する場合は、回路動作
が異なる各半導体集積回路のテストプログラムを個々に
準備しかつ、チップ内の識別記号を用いてあらかじめ試
験する1種類の半導体集積回路だけを測定する様にLS
Iテスタを設定しなければならないという欠点がある。In the conventional semiconductor integrated circuits described above, semiconductor integrated circuits with different circuit operations are identified by the type number of the semiconductor circuit provided in each chip or an identification symbol consisting of alphanumeric characters, etc. When using a tester to electrically test multiple semiconductor integrated circuits with different circuit operations created on the same wafer, prepare test programs for each semiconductor integrated circuit with different circuit operations, and The LS is designed to measure only one type of semiconductor integrated circuit to be tested in advance using the identification symbol.
The disadvantage is that the I tester must be configured.
本発明の半導体集積回路は、回路動作が異なる複数の半
導体集積回路をパッド数、入出力パッド位置、電源パッ
ド位置およびチップサイズを等しくして同一ウェハー上
に作成した半導体集積回路において、回路動作が異なる
半導体集積回路の各チップ内に回路動作の異なる半導体
集積回路個々に定められた任意の抵抗値を持つ抵抗素子
と、回路動作が異なる半導体集積回路の各チップ内に上
記抵抗素子によって互いに接続されているパッドを有し
かつ、抵抗素子によって接続されている上記パッドが同
一ウェハー上に作成された半導体集積回路を構成する全
チップ内の同一箇所に設けられている。The semiconductor integrated circuit of the present invention is a semiconductor integrated circuit in which a plurality of semiconductor integrated circuits with different circuit operations are fabricated on the same wafer with the same number of pads, input/output pad positions, power supply pad positions, and chip size. In each chip of different semiconductor integrated circuits, a resistor element having an arbitrary resistance value determined for each semiconductor integrated circuit with a different circuit operation is installed, and in each chip of a semiconductor integrated circuit with a different circuit operation, the resistor element is connected to each other by the above-mentioned resistor element. The pads connected by resistive elements are provided at the same location in all chips constituting a semiconductor integrated circuit fabricated on the same wafer.
かくして、回路動作が異なる半導体集積回路個々に定め
たれた任意の抵抗値を持つ抵抗素子により互いに接続さ
れたパッドを同一ウェノ1−上の全チップ内の等しい位
置に設け、上記パッド間の抵抗値を測定することにより
回路動作が異なる半導体集積回路の識別を行なうことが
できる。In this way, pads connected to each other by resistive elements having arbitrary resistance values determined for individual semiconductor integrated circuits with different circuit operations are provided at equal positions in all chips on the same chip, and the resistance value between the pads is adjusted. By measuring this, it is possible to identify semiconductor integrated circuits with different circuit operations.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例である。11.12は回路動
作が異なる半導体集積回路をパッド数。FIG. 1 shows an embodiment of the present invention. 11.12 is the number of pads for semiconductor integrated circuits with different circuit operations.
入出力パッド位置、電源パッド位置およびチップサイズ
が等しいチップで同一ウェハー13上に構成した半導体
集積回路、14.15は任意の抵抗値Rを有する抵抗素
子18で互いに接続された半導体集積回路11内に設け
られたパッド16.17は抵抗素子18が2個直列とな
った抵抗値2Rを有する抵抗素子19で互いに接続され
た半導体集積回路12内に設けられ、かつ、パッド14
.15と同一の位置に設けられたパッドである。Semiconductor integrated circuits constructed on the same wafer 13 with chips having the same input/output pad positions, power supply pad positions, and chip sizes, 14.15 inside the semiconductor integrated circuits 11 connected to each other by resistive elements 18 having arbitrary resistance values R; Pads 16 and 17 provided in the semiconductor integrated circuit 12 are provided in the semiconductor integrated circuit 12 which are connected to each other by a resistance element 19 having a resistance value of 2R in which two resistance elements 18 are connected in series.
.. This is a pad provided at the same position as No. 15.
次に、ウェハー段階でLSIテスタを使用して半導体集
積回路11.12を電気的に試験する場合について説明
する。Next, a case will be described in which the semiconductor integrated circuits 11 and 12 are electrically tested using an LSI tester at the wafer stage.
本試験に使用するテストプログラムは、半導体集積回路
11.12の試験前にパッド14.15あるいはパッド
16.17間の抵抗値を測定し、測定した抵抗値により
半導体集積回路11または12の電気的試験を行なうテ
ストプログラムである。The test program used in this test measures the resistance value between pads 14.15 or pads 16.17 before testing the semiconductor integrated circuit 11.12, and determines the electrical resistance of the semiconductor integrated circuit 11 or 12 based on the measured resistance value. This is a test program that performs tests.
LSIテスタの設定は半導体集積回路11,12を任意
に選択し測定する様に設定する。The LSI tester is set so that semiconductor integrated circuits 11 and 12 are arbitrarily selected and measured.
上述した試験設定のもとて電気的試験を実行すると、テ
スタは任意に半導体集積回路11.12のどちらか一方
を選択する。When an electrical test is performed using the test settings described above, the tester arbitrarily selects either one of the semiconductor integrated circuits 11 and 12.
半導体集積回路11を選択した時はパッド14.15間
の抵抗素子18を測定することにより半導体集積回路1
1であることを識別し、自動的に半導体集積回路11の
電気的試験を開始する。When the semiconductor integrated circuit 11 is selected, the resistance element 18 between the pads 14 and 15 is measured.
1, and automatically starts an electrical test of the semiconductor integrated circuit 11.
また、半導体集積回路12を選択した時はパッド16.
17間の抵抗素子19を測定することにより半導体集積
回路I2であることを識別し自動的に半導体集積回路1
2の電気的試験を開始する。Further, when the semiconductor integrated circuit 12 is selected, the pad 16.
By measuring the resistance element 19 between 17 and 17, it is identified that it is a semiconductor integrated circuit I2, and the semiconductor integrated circuit 1 is automatically detected.
Start electrical test No. 2.
第2図は本発明の他の実施例である。FIG. 2 shows another embodiment of the invention.
21.22は回路動作が異なる半導体集積回路をPAD
数、入出力となるパッド位置、電源となるパッド位置お
よびチップサイズが等しいチップで同一ウェハー23上
に構成した半導体集積回路、24.25は任意のON抵
抗値Rを有するNchMO8)ランジスタ28で互いに
接続された半導体集積回路27内に設けられたパッド、
26.27はNchMO8)ランジスタ28が2個直列
となったON抵抗値2Rを有するNchMO8I・ラン
ジスタ29で互いに接続された半導体集積回路22内に
設けられかつ、PAD24,25と同一の位置に設けら
れたパッドである。21.22 is a PAD semiconductor integrated circuit with different circuit operations.
A semiconductor integrated circuit constructed on the same wafer 23 with chips having the same number, input/output pad positions, power supply pad positions, and chip size, 24.25 is an Nch MO8) transistor 28 having an arbitrary ON resistance value R, a pad provided within the connected semiconductor integrated circuit 27;
26.27 is provided in the semiconductor integrated circuit 22 in which two NchMO8) transistors 28 are connected in series with an NchMO8I transistor 29 having an ON resistance value of 2R, and is provided at the same position as the PADs 24 and 25. It is a pad.
次にウェハー段階でLSIテスタを使用して同一ウェハ
ー23上の半導体集積回路21.22を電気的に試験す
る場合について説明する。本試験に使用するテストフロ
グラムは半導体集積回路21.22の試験前にパッド2
4.25あるいはパッド26.27間の抵抗値を測定し
測定した抵抗値により半導体集積回路21.または22
の電気的試験を行なうテストプログラムである。Next, a case will be described in which the semiconductor integrated circuits 21 and 22 on the same wafer 23 are electrically tested using an LSI tester at the wafer stage. The test program used for this test is
4.25 or the resistance value between the pads 26 and 27, and the semiconductor integrated circuit 21. or 22
This is a test program that performs electrical tests.
LSIテスタの設定は半導体集積回路21.22を測定
するように設定する。The LSI tester is set to measure semiconductor integrated circuits 21 and 22.
上述した試験設定のもとで電気的試験を実行すると、L
SIテスタは任意に半導体集積回路21あるいは22を
選択する。半導体集積回路21を選択した時はパッド2
4.25間の抵抗素子28のON抵抗値を測定し、半導
体集積回路21であることを識別し自動的に半導体集積
回路21の電気的試験を開始する。また半導体集積回路
22を選択した時はパッド26.27間の抵抗素子29
のON抵抗値を測定し半導体集積回路22であることを
識別し自動的に半導体集積回路22の電気的試験を開始
する。When performing the electrical test under the test settings described above, L
The SI tester arbitrarily selects the semiconductor integrated circuit 21 or 22. Pad 2 when semiconductor integrated circuit 21 is selected
The ON resistance value of the resistance element 28 between 4.25 and 25 is measured, the semiconductor integrated circuit 21 is identified, and an electrical test of the semiconductor integrated circuit 21 is automatically started. Also, when the semiconductor integrated circuit 22 is selected, the resistor element 29 between the pads 26 and 27
The ON resistance value of the semiconductor integrated circuit 22 is measured, the semiconductor integrated circuit 22 is identified, and an electrical test of the semiconductor integrated circuit 22 is automatically started.
以上説明したように本発明は、回路動作が異なる複数の
半導体集積回路をパッド数、入出力パッド位置、電源パ
ッド位置およびチップサイズをそれぞれ等しくして、同
一ウェハー上に作成した半導体集積回路において、回路
動作が異なる半導体集積回路の各チップ内に回路動作が
異なる半導体集積回路の種類によって定められた任意の
抵抗値を持つ抵抗素子によって互いに接続されたパッド
を有しかつ、抵抗素子によって互いに接続されたパッド
を同一ウェハー上の全チップの等しい位置に設けること
により、つよバー段階でLSIテスタを使用した半導体
集積回路の電気的試験において、同一ウェハー上の回路
動作が異なる半導体集積回路を自動的に試験することが
可能となり試験時間が短縮できる効果がある。As explained above, the present invention provides a semiconductor integrated circuit in which a plurality of semiconductor integrated circuits having different circuit operations are fabricated on the same wafer with the same number of pads, input/output pad positions, power supply pad positions, and chip sizes. Each chip of a semiconductor integrated circuit with a different circuit operation has pads connected to each other by a resistor element having an arbitrary resistance value determined by the type of semiconductor integrated circuit with a different circuit operation; By providing pads at the same positions on all chips on the same wafer, it is possible to automatically test semiconductor integrated circuits with different circuit operations on the same wafer during electrical testing of semiconductor integrated circuits using an LSI tester at the crossbar stage. This has the effect of shortening test time.
第1図は本発明の第1の実施例、第2図は本発明の第2
の実施例、第3図は従来例である。
11.12,21.22,31.32・・・・・・回路
動作が異なる半導体集積回路、13,23.33・・・
・・・ウェハー 14.15,16,17,2425.
26,27.35・・・・・・パッド、18.19・・
・・・・抵抗素子、28.29・・・・・・N c b
Mo S )ランジスタ、34・・・・・・識別記号、
IA・・・・・・半導体集積回路11の拡大図、IB・
・・・・・半導体集積回路12の拡大図、2A・・・・
・・半導体集積回路21の拡大図、2B・・・・・・半
導体集積回路22の拡大図。FIG. 1 shows a first embodiment of the present invention, and FIG. 2 shows a second embodiment of the present invention.
The embodiment shown in FIG. 3 is a conventional example. 11.12, 21.22, 31.32... Semiconductor integrated circuits with different circuit operations, 13, 23.33...
...Wafer 14.15,16,17,2425.
26, 27.35...Pad, 18.19...
...Resistance element, 28.29...N c b
MoS) transistor, 34... identification symbol,
IA...Enlarged view of semiconductor integrated circuit 11, IB.
...Enlarged view of semiconductor integrated circuit 12, 2A...
... Enlarged view of semiconductor integrated circuit 21, 2B... Enlarged view of semiconductor integrated circuit 22.
Claims (1)
出力パッド位置、電源パッド位置およびチップサイズを
それぞれ等しくして同一ウェハー上に作成した半導体集
積回路において、回路動作が異なる半導体集積回路の各
チップ内に回路動作が異なる半導体集積回路個々に定め
られた任意の抵抗値を持つ抵抗素子によって互いに接続
されたパッドを含み、かつ上記抵抗素子によって互いに
接続されたパッドが同一ウェハー上に作成された半導体
集積回路を構成する全チップ内の同じ位置に設けられた
ことを特徴とする半導体集積回路。In a semiconductor integrated circuit where multiple semiconductor integrated circuits with different circuit operations are created on the same wafer with the same number of pads, input/output pad positions, power supply pad positions, and chip size, each chip of the semiconductor integrated circuit with different circuit operations A semiconductor integrated circuit with different circuit operations, which includes pads connected to each other by resistive elements having arbitrary resistance values determined for each individual semiconductor integrated circuit, and in which the pads connected to each other by the resistive elements are fabricated on the same wafer. A semiconductor integrated circuit characterized in that it is provided at the same position within all chips constituting the integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34282089A JPH03203365A (en) | 1989-12-29 | 1989-12-29 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34282089A JPH03203365A (en) | 1989-12-29 | 1989-12-29 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03203365A true JPH03203365A (en) | 1991-09-05 |
Family
ID=18356743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34282089A Pending JPH03203365A (en) | 1989-12-29 | 1989-12-29 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03203365A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006294930A (en) * | 2005-04-12 | 2006-10-26 | Denso Corp | Semiconductor integrated circuit device and mounting method thereof |
-
1989
- 1989-12-29 JP JP34282089A patent/JPH03203365A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006294930A (en) * | 2005-04-12 | 2006-10-26 | Denso Corp | Semiconductor integrated circuit device and mounting method thereof |
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