JPH03201433A - Sige mixed crystal-si or ge-si selective etchant - Google Patents
Sige mixed crystal-si or ge-si selective etchantInfo
- Publication number
- JPH03201433A JPH03201433A JP34030889A JP34030889A JPH03201433A JP H03201433 A JPH03201433 A JP H03201433A JP 34030889 A JP34030889 A JP 34030889A JP 34030889 A JP34030889 A JP 34030889A JP H03201433 A JPH03201433 A JP H03201433A
- Authority
- JP
- Japan
- Prior art keywords
- mixed crystal
- etching
- etched
- koh
- sige mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 241000033695 Sige Species 0.000 title 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 20
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract description 3
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 8
- 125000005842 heteroatom Chemical group 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＳｉＧｅ混晶−Ｓｉ系あるいはＧｅ−Ｓｉ系
の選択エツチング液に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a SiGe mixed crystal-Si type or Ge-Si type selective etching solution.
（従来の技術とその問題点）
近年、ＳｉｘＧｅ１−ｘ系へテロ・バイポーラ・トラン
ジスタの製造プロセス等への応用を目的として、ＳｉＧ
ｅ混晶のエツチング法がさかん研究されている。しかし
従来までのウェット・エツチング法では、Ｇｅ、ＳｉＧ
ｅ混晶はエツチングされずＳｉはエツチングされるとい
う選択エツチングのできるエツチング液がなかった。(Conventional technology and its problems) In recent years, SiG
Etching methods for e-mixed crystals are being actively researched. However, in the conventional wet etching method, Ge, SiG
There was no etching solution capable of selectively etching Si while not etching the e-mixed crystal.
（問題点を解決するための手段）
本発明ではＫＯＨ：に２Ｃｒ０７：イソプロビルアルコ
ール：Ｈ２Ｏを混合したエツチング液を使用する。(Means for Solving the Problems) In the present invention, an etching solution is used in which KOH: is mixed with 2Cr07:isopropyl alcohol:H2O.
（作用）
本エッチンク液は、［ＯＨ］によってＳｉ、Ｇｅ、Ｓｉ
Ｇｅ混晶がエツチングされる。しかし、［ＯＨ］の濃度
によってＧｅ、ＳｉＧｅ混晶がエツチングされない領域
にある。この領域をに２Ｃｒ０７の［Ｋ］とＩＳＯＰｒ
ｏｐｉｌａｌｃｏｈｏｌの［Ｈ］の比率によって作って
やる。この領域を作ってやることにより、Ｇｅ、ＳｉＧ
ｅ混晶はエツチングされずＳｉのみエツチングされるよ
うになる。(Function) This etching solution can be used to remove Si, Ge, and Si by [OH].
Ge mixed crystal is etched. However, the Ge and SiGe mixed crystals are in a region where they are not etched due to the concentration of [OH]. In this region, [K] of 2Cr07 and ISOPr
It is made by the ratio of [H] in opilalcohol. By creating this region, Ge, SiG
The e-mixed crystal is not etched, but only the Si is etched.
（実施例）
基板は、５ｉ（１００）基板上にＳｉを分子線エピタキ
シャル成長したものと、５ｉ（１００）基板上にＳｉ１
−ｘＧｅｘ混晶を分子線エピタキシャル成長したものと
、Ｇｅ（１１１）基板を使用した。この３種類の基板上
にＣＶＤにより酸化膜を堆積する。フォトリソグラフ技
術によりこの酸化膜をパターニングする。このようにし
て部分的に５ｉ０２膜におおわれた規範をＫＯＨ、Ｋ２
Ｃｒｏ７．イソプロピルアルコール、Ｈ２Ｏが混合した
エツチング液によりエツチングする。本実施例では混合
比率はＫＯＨ：３００ｇ、に２Ｃｒ０７：１２ｇ、イソ
プロピルアルコール：３００ｍ１．Ｈ２Ｏ：１２００ｍ
１とした。この後、バッフアートフッ酸（緩衝フッ酸）
により５ｉ０２膜を除去する。第１，２図は、維持用の
工程を行った基板を段差系によって測定した結果である
。第１，２図の結果を見るとＳｉはエツチングされ、Ｇ
ｅはエツチングされず、ＳｉＧｅ混晶はＳｉの１ノ２０
以下しかエツチングされないということが判る。(Example) The substrates were one on which Si was grown by molecular beam epitaxial growth on a 5i (100) substrate, and one on which Si was grown on a 5i (100) substrate by molecular beam epitaxial growth.
-xGex mixed crystal grown by molecular beam epitaxial growth and a Ge (111) substrate were used. Oxide films are deposited on these three types of substrates by CVD. This oxide film is patterned using photolithography technology. In this way, the standards partially covered with the 5i02 film were used as KOH and K2
Cro7. Etching is performed using an etching solution containing a mixture of isopropyl alcohol and H2O. In this example, the mixing ratio is KOH: 300 g, 2Cr: 12 g, and isopropyl alcohol: 300 ml. H2O: 1200m
It was set to 1. After this, buffered hydrofluoric acid (buffered hydrofluoric acid)
The 5i02 film is removed. FIGS. 1 and 2 show the results of measurements using a step system on a substrate that has been subjected to a maintenance process. Looking at the results in Figures 1 and 2, Si is etched and G
e is not etched, and the SiGe mixed crystal is 1 to 20 of Si.
It can be seen that only the following is etched.
第３図は、実際のＳｉ１−ｘＧｅｘ系へテロ・バイポー
ラ・トランジスタの製造プロセスである。まずＮ型Ｓｉ
基板１の上に戸のＳｉＧｅ混晶４を戒長し、その上に５
ｉ０２膜を堆積する。この５ｉ０２をパターニングしそ
れをマスクにＳｉの洗浄液として衆知のＮＨ４ＯＨ：Ｈ
２Ｏ２：Ｈ２０混合液に堆積するとＳｉＧｅ混晶４のみ
がエツチングされる。前述の５ｉ０２を除去し、新たに
ＣＶＤ法で５ｉ０２を形成しパターニングして５ｉ０２
２とする。その後Ｎ＋Ｓｉのエピタキシャル成長を行う
と５ｉ０２２の開口部は単結晶のＮ＋型Ｓｉ３が戒長し
、５ｉ０２２上はポリＳｉ６となる。そのあと、Ｎ＋型
Ｓｉ３を残したい領域上にフォトレジスト５を形成する
。（第３図Ａ）この状態で本発明のエツチング液により
エツチングする。FIG. 3 shows an actual manufacturing process of a Si1-xGex hetero bipolar transistor. First, N-type Si
A SiGe mixed crystal 4 is placed on top of the substrate 1, and 5 is placed on top of it.
Deposit the i02 film. Pattern this 5i02 and use it as a mask to use NH4OH:H, a well-known cleaning solution for Si.
When deposited in a 2O2:H20 mixed solution, only the SiGe mixed crystal 4 is etched. The above-mentioned 5i02 is removed, a new 5i02 is formed by CVD method, and patterned to form 5i02.
Set it to 2. After that, epitaxial growth of N+Si is performed, and the opening of 5i022 is made of single-crystal N+ type Si3, and the area above 5i022 becomes poly-Si6. After that, a photoresist 5 is formed on the region where the N+ type Si3 is desired to remain. (FIG. 3A) In this state, etching is performed using the etching solution of the present invention.
エツチング後にホト・レジストを除去し、５ｉ０２７を
堆積した後にパターニングし、コンタクトとしてＡ１１
０をつけてトランジスタとして完成する。（第３図Ｂ）
この後、その構造を断面ＳＥＭ観察すると予想通りの構
造が得られていることが確認されたるまん、本製造プロ
セスを用いて作成したヘテロ・バイポーラ・トランジス
タは正常なエッミタ接地特性を示した。After etching, the photoresist was removed and 5i027 was deposited and patterned, forming A11 as a contact.
Add 0 to complete the transistor. (Figure 3B)
Thereafter, cross-sectional SEM observation of the structure confirmed that the expected structure had been obtained, and the hetero bipolar transistor fabricated using this manufacturing process exhibited normal emitter grounding characteristics.
（発明の効果）
以上詳しく説明したように、本発明のエツチング液を用
いたウェット・エツチング法を用いればＳｉＧｅ混晶や
ＧｅのＳｉに対する選択エツチングが可能である。(Effects of the Invention) As described in detail above, selective etching of SiGe mixed crystal and Ge with respect to Si is possible by using the wet etching method using the etching solution of the present invention.
第１図は、Ｓｉのみの時とＧｅのみの時のエツチング量
の結果を示す図。
第２図は、エツチング時間を一定にしＧｅの混晶比を変
化させた時のエツチング量の結果を示す図。
第３図は、Ｓｉ１−ｘＧｅｘ系へテロ・バイポーラ・ト
ランジスタを作るうえのプロセス工程を示す断面図。
１・・・Ｎ型Ｓｉ基板、２・・・５ｉ０２．３・・・Ｎ
＋型Ｓｉ、４・・・Ｐ＋型ＳｉＧｅ混晶、５・・・フォ
トレジスト、６・・・ポリ５ｉ１７−Ｓｉ０２．１Ｏ−
ＡＩＱFIG. 1 is a diagram showing the results of the etching amount when using only Si and when using only Ge. FIG. 2 is a diagram showing the results of the etching amount when the etching time is kept constant and the Ge mixed crystal ratio is varied. FIG. 3 is a cross-sectional view showing the process steps for making a Si1-xGex-based hetero bipolar transistor. 1...N type Si substrate, 2...5i02.3...N
+ type Si, 4...P+ type SiGe mixed crystal, 5...photoresist, 6...poly 5i17-Si02.1O-
A.I.Q.
Claims (1)
Ｈ＿２Ｏを混合したことを特徴とするＳｉＧｅ混晶−Ｓ
ｉ系あるいはＧｅ−Ｓｉ系の選択エッチング液。KOH, K_2CrO_7, isopropyl alcohol,
SiGe mixed crystal-S characterized by mixing H_2O
i-based or Ge-Si-based selective etching solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340308A JP2581241B2 (en) | 1989-12-28 | 1989-12-28 | Selective etching solution of Si for SiGe mixed crystal / Si system or Ge / Si system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340308A JP2581241B2 (en) | 1989-12-28 | 1989-12-28 | Selective etching solution of Si for SiGe mixed crystal / Si system or Ge / Si system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03201433A true JPH03201433A (en) | 1991-09-03 |
| JP2581241B2 JP2581241B2 (en) | 1997-02-12 |
Family
ID=18335704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340308A Expired - Fee Related JP2581241B2 (en) | 1989-12-28 | 1989-12-28 | Selective etching solution of Si for SiGe mixed crystal / Si system or Ge / Si system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2581241B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545682A (en) * | 2018-11-14 | 2019-03-29 | 复旦大学 | The preparation method of the micro- disk of sige alloy based on silicon substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212060A (en) * | 1975-07-15 | 1977-01-29 | Mefina Sa | Method of forming buttonhole with zigzag stitch sewing machine |
-
1989
- 1989-12-28 JP JP1340308A patent/JP2581241B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212060A (en) * | 1975-07-15 | 1977-01-29 | Mefina Sa | Method of forming buttonhole with zigzag stitch sewing machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545682A (en) * | 2018-11-14 | 2019-03-29 | 复旦大学 | The preparation method of the micro- disk of sige alloy based on silicon substrate |
| CN109545682B (en) * | 2018-11-14 | 2021-12-28 | 复旦大学 | Preparation method of silicon-germanium alloy microdisk based on silicon substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2581241B2 (en) | 1997-02-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |