JPH03201322A - Insulating member and electric component part using same - Google Patents
Insulating member and electric component part using sameInfo
- Publication number
- JPH03201322A JPH03201322A JP1340956A JP34095689A JPH03201322A JP H03201322 A JPH03201322 A JP H03201322A JP 1340956 A JP1340956 A JP 1340956A JP 34095689 A JP34095689 A JP 34095689A JP H03201322 A JPH03201322 A JP H03201322A
- Authority
- JP
- Japan
- Prior art keywords
- insulating member
- insulating
- insulating layer
- ceramics
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 7
- 239000010432 diamond Substances 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 2
- 229910003465 moissanite Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 4
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 238000013459 approach Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- -1 Plus Deck Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、高温プラズマを内包する真空容器のように
、高温、高電圧、高温度勾配、衝撃荷重といった絶縁用
部材としては特に過酷な環境下におかれる絶縁用部材及
びその絶縁用部材を用いた電気部品に関するものである
。[Detailed Description of the Invention] [Field of Industrial Application] This invention is suitable for use in particularly harsh environments as an insulating member, such as a vacuum container containing high-temperature plasma, such as high temperature, high voltage, high temperature gradient, and shock load. This invention relates to an insulating member placed below and an electrical component using the insulating member.
従来、−船釣な絶縁用部材として、陶器、磁器（碍子）
、ベークライト、雲母、プラスデック、ゴム等が知られ
ている。これらは導電性基台と電気部品との間に介在さ
れ、締結、接着、ろう接、嵌合等の手段により一体化さ
れる。このような絶縁用部材及び電気部品の絶縁構造は
、通常の使用環境下では十分絶縁機能を果すことができ
る。Traditionally, ceramics and porcelain (insulators) were used as insulating materials for boat fishing.
, Bakelite, mica, Plus Deck, rubber, etc. are known. These are interposed between the conductive base and the electrical component and integrated by means such as fastening, adhesion, soldering, and fitting. Such insulating members and insulating structures of electrical components can sufficiently perform an insulating function under normal usage environments.
しかしながら、例えば高温プラズマを内包する真空容器
内部の部品のように、高温、高電圧、高温度勾配等の過
酷な環境下で、しかも限られた空間に設置され、衝撃的
な荷重を受けるような電気部品においては、耐熱性、耐
絶縁性、耐熱衝撃性、耐衝突性等の性能が同時に要求さ
れ、更に小さいスペースで部材を構成できることが必要
である。However, for example, parts inside a vacuum vessel containing high-temperature plasma may be installed in harsh environments such as high temperatures, high voltages, and high temperature gradients, and in a limited space, and may be subjected to shocking loads. Electrical components are required to have properties such as heat resistance, insulation resistance, thermal shock resistance, and collision resistance, and it is also necessary to be able to construct the member in a small space.
■ これに対し、従来の陶磁器やセラミックス等の碍子
は次のような問題がある。■ On the other hand, conventional insulators such as ceramics and ceramics have the following problems.
（ｉ）ボルト、ナツト等での締結が必要であり、装置全
体が大きくなる。(i) Fastening with bolts, nuts, etc. is required, which increases the size of the entire device.
（ｉｉ）ろう接で接着した場合には、基材金属との熱膨
張係数の大きな違いによる割れや剥離が起り易くなる。(ii) When bonded by soldering, cracking and peeling are likely to occur due to a large difference in coefficient of thermal expansion from the base metal.
（ｉｉｉ ）−船釣に熱伝導率が低く、大きな熱勾配に
耐えられない。(iii) - Low thermal conductivity for boat fishing and cannot withstand large thermal gradients.
（１ｖ）硬（て脆いという性質のために、衝撃的な荷重
がかかる部位には使用しにくい。(1v) Due to its hard and brittle nature, it is difficult to use in areas subject to impact loads.
■ ヘークライト、プラスチック、ゴム等は耐熱温度が
低く、２００°Ｃを連続的に越えるところでは使用でき
ない。また、真空中でのガスの放出を避けることができ
ない。■ Haeclite, plastic, rubber, etc. have low heat resistance and cannot be used in environments that continuously exceed 200°C. Also, gas release in vacuum cannot be avoided.
■ 雲母は、耐熱性、耐絶縁性はともに高いが、壁間性
を有しているため強度が低い。■ Mica has high heat resistance and insulation resistance, but its strength is low because it has wall-to-wall properties.
この発明は上記のごとき問題点にかんがみ、高温、高電
圧、高温度勾配、衝撃荷重といった絶縁用部材としては
、特に過酷な環境下で用いることのできる絶縁用部材及
びそれを用いた電気部品を提供することを課題とする。In view of the above-mentioned problems, this invention provides insulating members that can be used under particularly harsh environments such as high temperatures, high voltages, high temperature gradients, and shock loads, and electrical components using the same. The challenge is to provide.
［課題を解決するための手段〕
この発明に係る絶縁用部材の構成は、第１図に示すよう
に、基材１の片面にセラミックス薄膜でなる絶縁層２を
被覆したものである。[Means for Solving the Problems] As shown in FIG. 1, the insulating member according to the present invention has a structure in which one side of a base material 1 is coated with an insulating layer 2 made of a ceramic thin film.
基材１の材料は、耐熱性に優れた金属であるＭｏ、Ｎｂ
、 Ｔａ、 ＷおよびＡＩＮ 、 ＳｉＣ、Ｓｉ３Ｎ４
等のセラミックス焼結体等の中から、絶縁層２との密着
性、熱膨張係数等を考慮していずれか一つが選ばれる。The material of the base material 1 is Mo and Nb, which are metals with excellent heat resistance.
, Ta, W and AIN, SiC, Si3N4
Among the ceramic sintered bodies, etc., one is selected in consideration of adhesion with the insulating layer 2, coefficient of thermal expansion, etc.
絶縁層２を構成するセラミックスの材料としては、高い
電気絶縁性を持ち、耐熱性に優れた５ｉＣ１ＳｉＪ、
、ＡＩＮ及びダイヤモンドなどが通している。The ceramic material constituting the insulating layer 2 is 5iC1SiJ, which has high electrical insulation and excellent heat resistance.
, AIN and Diamond pass through it.
絶縁層２の厚さは１μｍ以上５００−以下とする。The thickness of the insulating layer 2 is 1 μm or more and 500 μm or less.
なぜなら、１ｐω末端ではピンホールやコーテイング膜
の不均一さにより導通する危険が大きく実用的でないか
らである。また、５００即を超えると、その機械的特性
が薄膜の特性よりもバルクセラミックスの特性に近くな
るため、「発明が解決しようとする課題」において述べ
たような不都合が生しるからである。This is because at the 1pω end, there is a great risk of electrical conduction due to pinholes or non-uniformity of the coating film, making it impractical. Moreover, if it exceeds 500, the mechanical properties become closer to those of bulk ceramics than those of a thin film, resulting in the disadvantages mentioned in "Problems to be Solved by the Invention".
なお、絶縁層２は複数層をコーティングしてもよい。Note that the insulating layer 2 may be coated with a plurality of layers.
次に、この発明に係る電気部品の構造は、第２図に示す
ように、上記の絶縁用部材３を用いるものであり、この
絶縁用部材３は、互いに電気的絶縁性を保って接続され
るべき導電性基台４と、導電性部品５との間に介在され
る。絶縁用部材３の基材１と導電性基台４とは、ろう材
６により接合される。また、絶縁用部材３の絶縁層２と
導電性部品５とは、ろう材６により接合されるが、絶縁
Ｎ２とろう材６との濡れ性を改善するために、絶縁層２
とろう材６との間にメタライズ層７を設けることが望ま
しい。Next, as shown in FIG. 2, the structure of the electrical component according to the present invention uses the above-mentioned insulating members 3, and the insulating members 3 are connected to each other while maintaining electrical insulation. It is interposed between a conductive base 4 to be used and a conductive component 5. The base material 1 of the insulating member 3 and the conductive base 4 are joined by a brazing material 6. Further, the insulating layer 2 of the insulating member 3 and the conductive component 5 are joined by a brazing material 6, but in order to improve the wettability between the insulating material N2 and the brazing material 6,
It is desirable to provide a metallized layer 7 between the brazing material 6 and the brazing material 6.
また、絶縁用部材３と部品５との熱膨張係数に大きな差
異がある場合は、絶縁用部材の両側にバッファー層を設
けることにより、熱応力の緩和を図ることができる。Furthermore, if there is a large difference in the coefficient of thermal expansion between the insulating member 3 and the component 5, thermal stress can be alleviated by providing buffer layers on both sides of the insulating member.
〔実施例］
第３図は第１実施例を示すものであり、ステンレススチ
ールの基台４上に、導電性電気部品５として銅製の電極
を取り付けたものである。[Example] FIG. 3 shows a first example, in which a copper electrode is attached as a conductive electric component 5 to a base 4 made of stainless steel.
両者の間に介在される絶縁用部材３は、基材１としてモ
リブデンを用い、絶縁層２としてダイヤモンドコーテイ
ング膜を施したものである。基材１のモリブデンと絶縁
Ｎ２のダイヤモンドとの接着強度を向上させるために、
炭化チタンでなる第１中間層８及び炭化珪素でなる第２
中間Ｎ８′を形成している。The insulating member 3 interposed between the two uses molybdenum as the base material 1 and has a diamond coating film applied as the insulating layer 2. In order to improve the adhesive strength between the molybdenum of the base material 1 and the diamond of the insulating N2,
A first intermediate layer 8 made of titanium carbide and a second intermediate layer 8 made of silicon carbide.
It forms an intermediate N8'.
上記の絶縁用部材３の基材１と基台４とは、メタライズ
層７を介してろう材６により接合される。The base material 1 and the base 4 of the above-mentioned insulating member 3 are joined by a brazing material 6 with a metallized layer 7 interposed therebetween.
また、絶縁用部材３の絶縁層２と導電性部品５とも、メ
タライズ層７を介してろう材６により接合される。Furthermore, the insulating layer 2 of the insulating member 3 and the conductive component 5 are bonded to each other by a brazing material 6 via a metallized layer 7.
上記の絶縁構造により、絶縁破壊電圧１．５ＫＶ、引っ
張り破断強度２５ｋｇ／ｍ−の特性を得ることができた
。With the above insulation structure, it was possible to obtain characteristics of a dielectric breakdown voltage of 1.5 KV and a tensile strength at break of 25 kg/m.
第４図は第２実施例を示すものであり、前込の第１実施
例の構造に、更に耐熱性をもたせるため、絶縁用部材３
の基材１と基台４との間、及び絶縁用部材３の絶縁層２
と部品５との間に、それぞれ熱膨張緩和のためのバッフ
ァー層９を介在している。これらのバッファー層９は、
その両面をろう材６によりそれぞれ基台４とメタライズ
層７及び部品５とメタライズ層７に接合される。FIG. 4 shows a second embodiment, in which an insulating member 3 is added to the front-loaded structure of the first embodiment to provide further heat resistance.
between the base material 1 and the base 4, and the insulating layer 2 of the insulating member 3
A buffer layer 9 is interposed between the component 5 and the component 5 to alleviate thermal expansion. These buffer layers 9 are
Both surfaces thereof are bonded to the base 4 and the metallized layer 7, and to the component 5 and the metallized layer 7, respectively, using a brazing material 6.
上記のバッファー層９としては、熱膨張係数１０ Ｘ
１０−’ ｄｅｇ−’の銅（Ｃｕ）−タングステン（Ｗ
）合金（厚さ５ＩＩＩ１１）を用いる。The buffer layer 9 has a thermal expansion coefficient of 10
10-'deg-' copper (Cu)-tungsten (W
) alloy (thickness 5III11) is used.
上記の構造により、耐熱温度を第１実施例の場合の５０
０ ”Ｃから７００°Ｃに向上することができた。With the above structure, the heat-resistant temperature can be increased to 50% compared to the first embodiment.
It was possible to improve the temperature from 0"C to 700°C.
第５図は第３実施例であり、前述の第２実施例（第４図
）の構造に、更に機械的強度及び絶縁耐圧を上げるため
に、絶縁用部材３の基材１として、ダイヤモンドコーテ
イング膜と密着性のよい窒化珪素の焼結体を用いたもの
である。この場合は、中間層を介することなく、窒化珪
素の基材１にダイヤモンドコーテイング膜でなる絶縁層
２を直接形成する。FIG. 5 shows a third embodiment, in which a diamond coating is used as the base material 1 of the insulating member 3 to further increase the mechanical strength and dielectric strength of the structure of the second embodiment (FIG. 4). It uses a sintered body of silicon nitride that has good adhesion to the film. In this case, the insulating layer 2 made of a diamond coating film is directly formed on the silicon nitride base material 1 without using an intermediate layer.
窒化珪素の厚みを５ｍｍとすることにより、引張り破断
強度がろう材の引張り破断強度である４０ｋｇ／ａｍ”
に向上することができ、また絶縁耐圧を６ＫＶに向上す
ることができた。By setting the thickness of silicon nitride to 5 mm, the tensile strength at break is 40 kg/am, which is the tensile strength at break of the brazing material.
It was also possible to improve the dielectric strength voltage to 6KV.
以上説明したように、この発明の絶縁用部材及びこれを
用いた電気部品は、耐熱性、耐ｍ縁性、耐温度勾配、機
械強度に優れ、かつ真空中で使用しても支障を来たさな
い。As explained above, the insulating member of the present invention and the electrical component using the same have excellent heat resistance, edge resistance, temperature gradient resistance, and mechanical strength, and do not cause problems even when used in a vacuum. I don't.
また、その容積も従来の場合に比べて小さくなるので、
限られた空間に設置しなければならない部品にも容易に
応用することができる。Also, its volume is smaller than in the conventional case, so
It can also be easily applied to parts that must be installed in a limited space.
第１図はこの絶縁用部材の基本的構造図、第２図は上記
の絶縁用部材を用いた電気部品の基本的構造図、第３図
から第５図は、それぞれ電気部品の第１〜第３実施例の
構造図である。
１・・・・・・基材、 ２・・・・・・絶縁
層、３・・・・・・絶縁用部材、 ４・・・・・・導
電性基台、５・・・・・・導電性部品、 ６・・・・
・・ろう材、７・・・・・・メタライズ層、 ８・・・
・・・第１中間層、８′・・・・・・第２中間層、 Ｓ
・・・・・・バッファー層。
第２図
第３図
第４図
第５図Fig. 1 is a basic structural diagram of this insulating member, Fig. 2 is a basic structural diagram of an electrical component using the above insulating member, and Figs. FIG. 3 is a structural diagram of a third embodiment. DESCRIPTION OF SYMBOLS 1... Base material, 2... Insulating layer, 3... Insulating member, 4... Conductive base, 5... Conductive parts, 6...
... Brazing filler metal, 7... Metallized layer, 8...
...First intermediate layer, 8'...Second intermediate layer, S
...Buffer layer. Figure 2 Figure 3 Figure 4 Figure 5
Claims (2)
部材において、上記の基材がＭｏ、Ｎｂ、Ｔａ、Ｗ、Ａ
ｌＮ、ＳｉＣ及びＳｉ＿３Ｎ＿４から選ばれた一つの材
料から成り、上記の絶縁層が、ＳｉＣ、Ｓｉ＿３Ｎ＿４
、ＡｌＮ及びダイヤモンドから選ばれた少なくとも一層
のセラミックス薄膜を含み、かつその厚さが１μｍ以上
５００μｍ以下であることを特徴とする絶縁用部材。(1) In an insulating member consisting of a base material and an insulating layer coated on the surface thereof, the base material may be Mo, Nb, Ta, W, or A.
The above insulating layer is made of one material selected from IN, SiC and Si_3N_4.
An insulating member comprising at least one ceramic thin film selected from , AlN, and diamond, and having a thickness of 1 μm or more and 500 μm or less.
の絶縁用部材を介在し、一体に接合してなる電気部品。(2) An electrical component formed by interposing the insulating member according to claim 1 between a conductive base and a conductive component and joining them together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340956A JP2597018B2 (en) | 1989-12-26 | 1989-12-26 | Insulating member and electrical component using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340956A JP2597018B2 (en) | 1989-12-26 | 1989-12-26 | Insulating member and electrical component using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03201322A true JPH03201322A (en) | 1991-09-03 |
| JP2597018B2 JP2597018B2 (en) | 1997-04-02 |
Family
ID=18341861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340956A Expired - Fee Related JP2597018B2 (en) | 1989-12-26 | 1989-12-26 | Insulating member and electrical component using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2597018B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994020985A1 (en) * | 1993-03-11 | 1994-09-15 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
| EP0821397A2 (en) * | 1996-07-26 | 1998-01-28 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| CN110358508A (en) * | 2019-08-02 | 2019-10-22 | 太原理工大学 | Diamantiferous composite heat dissipation material and preparation method thereof |
| CN110428912A (en) * | 2019-08-02 | 2019-11-08 | 太原理工大学 | Plasma facing material and preparation method thereof containing diamond |
| CN111636023A (en) * | 2020-04-23 | 2020-09-08 | 陕西斯瑞新材料股份有限公司 | Preparation method of copper-tungsten gradient material electrical contact |
| CN112047739A (en) * | 2020-07-23 | 2020-12-08 | 全球能源互联网研究院有限公司 | Processable ceramic/metal gradient structure material and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216972A (en) * | 1986-03-17 | 1987-09-24 | 住友セメント株式会社 | High thermal shock resistance joining method of ceramic to metal and joined product |
-
1989
- 1989-12-26 JP JP1340956A patent/JP2597018B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216972A (en) * | 1986-03-17 | 1987-09-24 | 住友セメント株式会社 | High thermal shock resistance joining method of ceramic to metal and joined product |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994020985A1 (en) * | 1993-03-11 | 1994-09-15 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
| EP0821397A2 (en) * | 1996-07-26 | 1998-01-28 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| EP0821397A3 (en) * | 1996-07-26 | 1998-07-29 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US6881608B2 (en) | 1999-12-22 | 2005-04-19 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US7802539B2 (en) | 2000-06-30 | 2010-09-28 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| CN110358508A (en) * | 2019-08-02 | 2019-10-22 | 太原理工大学 | Diamantiferous composite heat dissipation material and preparation method thereof |
| CN110428912A (en) * | 2019-08-02 | 2019-11-08 | 太原理工大学 | Plasma facing material and preparation method thereof containing diamond |
| CN110428912B (en) * | 2019-08-02 | 2020-11-03 | 太原理工大学 | First wall material containing diamond and preparation method thereof |
| CN111636023A (en) * | 2020-04-23 | 2020-09-08 | 陕西斯瑞新材料股份有限公司 | Preparation method of copper-tungsten gradient material electrical contact |
| CN112047739A (en) * | 2020-07-23 | 2020-12-08 | 全球能源互联网研究院有限公司 | Processable ceramic/metal gradient structure material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2597018B2 (en) | 1997-04-02 |
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