JPH031965U - - Google Patents
Info
- Publication number
- JPH031965U JPH031965U JP6168289U JP6168289U JPH031965U JP H031965 U JPH031965 U JP H031965U JP 6168289 U JP6168289 U JP 6168289U JP 6168289 U JP6168289 U JP 6168289U JP H031965 U JPH031965 U JP H031965U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma etching
- porous
- upper electrode
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第1図は本考案によるプラズマエツチング装置
用電極を配設したプラズマエツチング装置の概略
説明図、第2図は本考案によるプラズマエツチン
グ装置用電極に用いた多孔質積層体の斜視図、第
3図は従来のプラズマエツチング装置用電極を配
設したプラズマエツチング装置の概略説明図、第
4図は従来の他のプラズマエツチング装置用電極
の要部の断面図である。
1,21……ケーシング、2,22……エツチ
ング室、3,23,43……上部電極、4,24
……下部電極、5,25,45……反応性ガス、
6,26,46…導入口、7,27,47……中
空部、8,48……流出口、9……多孔質積層体
、9a……多孔質体(通気率小)、9b……多孔
質体(通気率大)、10,29……基板、11,
30……高周波電源、12,31……排気口、2
8……小孔、49……多孔質体。
Fig. 1 is a schematic explanatory diagram of a plasma etching apparatus equipped with an electrode for a plasma etching apparatus according to the present invention, Fig. 2 is a perspective view of a porous laminate used for an electrode for a plasma etching apparatus according to the present invention, and Fig. 3 4 is a schematic explanatory diagram of a plasma etching apparatus equipped with a conventional plasma etching apparatus electrode, and FIG. 4 is a sectional view of a main part of another conventional plasma etching apparatus electrode. 1, 21... Casing, 2, 22... Etching chamber, 3, 23, 43... Upper electrode, 4, 24
... lower electrode, 5, 25, 45 ... reactive gas,
6, 26, 46... Inlet, 7, 27, 47... Hollow part, 8, 48... Outlet, 9... Porous laminate, 9a... Porous body (low air permeability), 9b... Porous body (high air permeability), 10, 29...Substrate, 11,
30... High frequency power supply, 12, 31... Exhaust port, 2
8...Small pore, 49...Porous body.
Claims (1)
に、その内部から反応性ガスを流出する上部電極
と、該上部電極に対向して配設するとともにその
面上に基板を載置する下部電極とを具え、前記両
電極間に高周波電圧を印加し、前記下部電極上に
載置した基板をエツチングするプラズマエツチン
グ装置に使用するためのプラズマエツチング装置
用電極であつて、このプラズマエツチング用電極
の上部電極は、反応性ガスの流出口に、通気率の
異なる多孔質体を少なくとも2層積層した多孔質
積層体を配設し、この多孔質積層体の下部電極に
面した側の多孔質体の通気率を、それより内側の
多孔質体の通気率よく大きくしたことを特徴とす
るプラズマエツチング装置用電極。 An upper electrode is disposed inside the casing and has a hollow shape, and a reactive gas flows out from inside the casing, and a lower electrode is disposed opposite to the upper electrode and a substrate is placed on the surface of the upper electrode. An electrode for a plasma etching apparatus for use in a plasma etching apparatus for etching a substrate placed on the lower electrode by applying a high frequency voltage between the two electrodes, the upper electrode of the plasma etching electrode In this method, a porous laminate in which at least two layers of porous bodies with different air permeability are laminated is provided at the outlet of the reactive gas, and the porous body on the side facing the lower electrode of this porous laminate is ventilated. An electrode for a plasma etching device, characterized in that the permeability of a porous body inside the electrode is increased to have a good permeability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6168289U JPH031965U (en) | 1989-05-26 | 1989-05-26 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6168289U JPH031965U (en) | 1989-05-26 | 1989-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH031965U true JPH031965U (en) | 1991-01-10 |
Family
ID=31590148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6168289U Pending JPH031965U (en) | 1989-05-26 | 1989-05-26 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH031965U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62210623A (en) * | 1986-03-11 | 1987-09-16 | Hitachi Electronics Eng Co Ltd | Electrode for vapor phase reactor |
-
1989
- 1989-05-26 JP JP6168289U patent/JPH031965U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62210623A (en) * | 1986-03-11 | 1987-09-16 | Hitachi Electronics Eng Co Ltd | Electrode for vapor phase reactor |