JPH0319541B2 - - Google Patents
Info
- Publication number
- JPH0319541B2 JPH0319541B2 JP56050657A JP5065781A JPH0319541B2 JP H0319541 B2 JPH0319541 B2 JP H0319541B2 JP 56050657 A JP56050657 A JP 56050657A JP 5065781 A JP5065781 A JP 5065781A JP H0319541 B2 JPH0319541 B2 JP H0319541B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- photoconductor layer
- substrate
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000031700 light absorption Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 56
- 230000001427 coherent effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 nigrosine Chemical compound 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/10—Bases for charge-receiving or other layers
- G03G5/102—Bases for charge-receiving or other layers consisting of or comprising metals
Description
【発明の詳細な説明】
本発明は電子写真記録装置に係り、特に半導体
レーザ光で多層光導電体層を感光する記録装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic recording device, and more particularly to a recording device that exposes a multilayer photoconductor layer with semiconductor laser light.
第１図は本発明を適用する従来のレーザビーム
プリンタの構成図である。多層光導電記録体であ
る感光ドラム１は図示せざる駆動源によつて矢印
イ方向に回転させられ、その表面は帯電器２によ
つて一様に帯電される。レーザ光３はドラム表面
を軸方向に走査するように照射され、ドラム表面
を感光して帯電を消失して電荷潜像を形成する。
このようにして作られた電荷潜像を現像器４で現
像することによつてトナー像が形成される。トナ
ー像が形成されたドラム表面に記録紙５を接触さ
せ、転写器６で転写用コロナ電荷を作用させるこ
とによつてトナー像が記録紙５に転写される。ト
ナー像転写後のドラム表面はランプ７で一様に露
光して残像電荷を消去し、残留するトナー像をク
リーナ８で清掃する。 FIG. 1 is a block diagram of a conventional laser beam printer to which the present invention is applied. A photosensitive drum 1, which is a multilayer photoconductive recording medium, is rotated in the direction of arrow A by a drive source (not shown), and its surface is uniformly charged by a charger 2. The laser beam 3 is irradiated so as to scan the drum surface in the axial direction, and the drum surface is exposed to light to eliminate the charge and form a charge latent image.
A toner image is formed by developing the charge latent image thus created with a developing device 4. The toner image is transferred onto the recording paper 5 by bringing the recording paper 5 into contact with the drum surface on which the toner image is formed, and applying a transfer corona charge by the transfer device 6 . After the toner image has been transferred, the surface of the drum is uniformly exposed with a lamp 7 to erase residual image charges, and the remaining toner image is cleaned with a cleaner 8.
このようなレーザビームプリンタにおいて、レ
ーザ光３は可干渉性単色光であるので、光導電体
層内で干渉して光の縞模様を形成するため、この
レーザ光３によつて作られた電荷潜像にも縞模様
が重畳される。従つて現像されたトナー像も濃淡
の模様が重畳されるが、この縞模様は中間調部や
背景部に生じやすい。トナー像にこのような縞模
様が発生しないようにするには、現像特性を硬調
とし、オーバ露光する方法が考えられるが、中間
調の再現性が悪くなつたり、細線が飛んでしまう
などの欠点があつた。また現像方法も正規現像方
法は縞模様が発生しやすいので反転現像方法を採
用しなければならなかつた。 In such a laser beam printer, since the laser beam 3 is coherent monochromatic light, it interferes within the photoconductor layer and forms a striped pattern of light, so the electric charge created by the laser beam 3 is A striped pattern is also superimposed on the latent image. Therefore, the developed toner image also has a superimposed pattern of light and shade, but this striped pattern tends to occur in halftone areas and background areas. In order to prevent this kind of striped pattern from occurring in the toner image, it is possible to increase the contrast of the development characteristics and use overexposure, but this method has drawbacks such as poor midtone reproducibility and skipped thin lines. It was hot. Further, as for the developing method, since the regular developing method tends to cause striped patterns, a reversal developing method had to be adopted.
本発明の目的は、可干渉性光によつて光導電体
層を感光しても光の干渉による縞模様の発生を軽
減または防止できる光導電記録体を有する電子写
真記録装置を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide an electrophotographic recording apparatus having a photoconductive recording material that can reduce or prevent the occurrence of striped patterns due to light interference even when a photoconductive layer is exposed to coherent light. be.
この目的を達成するため、本発明は、多層光導
電記録体層を透過した可干渉性光が反射して干渉
するのを軽減または防止したことを特徴とする。 To achieve this object, the present invention is characterized in that reflection and interference of coherent light transmitted through a multilayer photoconductive recording layer is reduced or prevented.
第２図〜第４図で種々の多層光導電記録体にレ
ーザ光などの可干渉性光を照射した場合に干渉縞
が発生する理由を説明する。 The reason why interference fringes occur when various multilayer photoconductive recording bodies are irradiated with coherent light such as laser light will be explained with reference to FIGS. 2 to 4.
第２図の光導電体層の中間部に主感光層をもつ
多層光導電記録体の例で、基板９上に第１光導電
体層１０、第２光導電体層１１、第３光導電体層
１２が積層してある。この光導電記録体の主感光
層は第２光導電体層１１である。例えば鏡面仕上
げしたAl基板９上に、50μmの厚さにSe光導電体
層１０を蒸着し、その上に内部で入射する半導体
レーザ光と基板９表面で反射する半導体レーザ光
とが干渉して、光の強弱縞模様をつくり得る程度
の厚さ（例えば1μm）にSe−Te光導電体層１１
を蒸着し、更にその上に2μmの厚さにSe光導電
体層１２を蒸着したものであるとき、第２光導電
体層１１のTeの含有量を５〜20原子％とすると
600〜900nmの波長の光に高感度をもち、第１光
導電体層１０、第３光導電体層１２は600nm以上
の波長を良く透過する光導電記録体となる。かか
る光導電記録体に例えば780nmの波長の半導体レ
ーザ光を照射すると、同一レーザビームスポツト
内のレーザ光l1〜l4は第３光導電体層１２を透過
して第２光導電体層１１で吸光されこれを感光す
るが、その一部は更に透過する。この透過光の一
部は第２光導電体層１１と第１光導電体層１０の
境界面で反射して反射光l1′となり、他の一部は第
１光導電体層１０を透過して基板９の表面で反射
して反射光l1″となつて再び第１光導電体層１０、
第２光導電体層１１を透過する。反射光l1″は第
３光導電体層１２の表面で再反射して再反射光l1
となつて第１〜第３光導電体層１０〜１２を透
過する。l1はレーザ光を吸収し、感度を有する
光導電体層１１を２回透過し更に光導体１２の表
面で反射したものであるので微弱である。このと
き反射光l1′と入射光l2，l1″とl3，l1とl4などがレ
ーザ光の同一レーザスポツト内で干渉して第２光
導電体層１１の内部で光の強弱縞模様をつくり、
第２光導電体層１１を感光するため、電荷潜像は
この干渉縞模様が重畳したものとなる。実際には
更に多くの反射光が存在して干渉縞を形成する原
因となるが、入射光l3と反射光l1″との干渉が特に
強い。 FIG. 2 is an example of a multilayer photoconductive recording material having a main photoconductive layer in the middle of the photoconductor layers. Body layers 12 are laminated. The main photosensitive layer of this photoconductive recording medium is the second photoconductor layer 11. For example, a Se photoconductor layer 10 is deposited to a thickness of 50 μm on a mirror-finished Al substrate 9, and the semiconductor laser light incident inside the layer and the semiconductor laser light reflected from the surface of the substrate 9 interfere with each other. , the Se-Te photoconductor layer 11 has a thickness (for example, 1 μm) that can create a striped pattern of light intensity.
is vapor-deposited, and a Se photoconductor layer 12 is further vapor-deposited on top of it to a thickness of 2 μm, and if the Te content of the second photoconductor layer 11 is 5 to 20 atomic%.
The first photoconductor layer 10 and the third photoconductor layer 12 are highly sensitive to light having a wavelength of 600 to 900 nm, and form a photoconductive recording medium that transmits wavelengths of 600 nm or more well. When such a photoconductive recording medium is irradiated with a semiconductor laser beam having a wavelength of, for example, 780 nm, the laser beams l 1 to l 4 within the same laser beam spot are transmitted through the third photoconductor layer 12 and are transferred to the second photoconductor layer 11 . It absorbs light and exposes it to light, but some of it is further transmitted. A part of this transmitted light is reflected at the interface between the second photoconductor layer 11 and the first photoconductor layer 10 and becomes reflected light l 1 ', and the other part is transmitted through the first photoconductor layer 10. The light is reflected from the surface of the substrate 9 and becomes reflected light l 1 ″, which is then transmitted to the first photoconductor layer 10 again.
It passes through the second photoconductor layer 11. The reflected light l 1 ″ is re-reflected on the surface of the third photoconductor layer 12 and becomes re-reflected light l 1
The light then passes through the first to third photoconductor layers 10 to 12. Since l 1 absorbs the laser light, passes through the sensitive photoconductor layer 11 twice, and is further reflected by the surface of the photoconductor 12, it is weak. At this time, the reflected light l 1 ′ and the incident lights l 2 , l 1 ″ and l 3 , l 1 and l 4 , etc. interfere within the same laser spot of the laser beam, and the light is emitted inside the second photoconductor layer 11. Create a strong and weak striped pattern,
Since the second photoconductor layer 11 is exposed to light, the charge latent image becomes a superimposed pattern of interference fringes. In reality, even more reflected light exists and causes the formation of interference fringes, but the interference between the incident light l 3 and the reflected light l 1 ″ is particularly strong.
第３図、第４図は基板９上に第１、第２の光導
電体層１５，１６を設け、第１光導電体層１５を
感光層とし、第２光導電体層１６を電荷搬送層と
した光導電記録体を示す。これ等の場合、感光層
１５内で入射光l1，l2と基板９表面で反射したl3
の反射光とで干渉を起し、光の強弱模様が生じ、
画像に濃淡のムラとなつて干渉縞が現われる。し
かし、いずれの場合も走査露光しているレーザビ
ームスポツト内で生ずる。 3 and 4, first and second photoconductor layers 15 and 16 are provided on a substrate 9, with the first photoconductor layer 15 serving as a photosensitive layer and the second photoconductor layer 16 serving as a charge transporting layer. Figure 3 shows a layered photoconductive recording material. In these cases, the incident light l 1 , l 2 in the photosensitive layer 15 and the l 3 reflected on the surface of the substrate 9
Interference occurs with the reflected light of the light, creating a pattern of light intensity and weakness.
Interference fringes appear in the image as uneven shading. However, in both cases, this occurs within the laser beam spot that is being scanned and exposed.
以上のように光導電体層内に侵入した光は光導
電体層内部で干渉したり、その外に表面保護層、
表面絶縁層、下地層内で干渉してその光が光導電
体層を感光して縞模様を形成する。 As described above, the light that has entered the photoconductor layer may interfere with the inside of the photoconductor layer, or may be exposed to the surface protective layer or the like.
The light interferes within the surface insulating layer and the underlayer and exposes the photoconductor layer to form a striped pattern.
発明者らは種々の実験によつて、この干渉縞模
様の発生が基板９の表面での反射光に最も大きく
影響されることを発見した。 Through various experiments, the inventors discovered that the generation of this interference fringe pattern is most influenced by the light reflected on the surface of the substrate 9.
以下本発明の実施例を第５図、第６図を参照し
て説明する。 Embodiments of the present invention will be described below with reference to FIGS. 5 and 6.
第５図は光導電記録体として基板９の表面に光
吸収性の下地層１８を設けて光導電体層１７を透
過した光が基板９の表面で反射しないようにした
ものである。下地層１８は照射されるレーザ光を
吸収し、電荷を著積しないように1013Ωcm程度以
下の体積抵抗をもつものがよい。例えばAl基板
９の表面を黒色アルマイト処理して下地層１８を
形成すれば目的を達成することができる。また、
樹脂中にカーボン、着色顔料、染料を混入したも
のを基板９の表面に塗工すること、あるいは無機
顔料金属などを基板９の表面に蒸着することによ
つても目的に沿つた下地層１８が形成できる。使
用するレーザ光が半導体レーザ光のごとく近赤外
〜赤外光の場合には、青色〜黒色系の顔料、染料
を用いて下地層１８を形成すると特に効果的であ
る。その例としては、カーボン、ニグロシン、メ
チレンブルー、銅フタロシアニンなどをポリカー
ボネイト、ポリビニルアルコール、ポリビニルバ
ゾール、アクリル、アクリルブチル、スチレンな
どのプラスチツクに分散したものを0.1〜0.5μmの
厚さに塗工するとよい。 FIG. 5 shows a photoconductive recording medium in which a light-absorbing underlayer 18 is provided on the surface of a substrate 9 so that light transmitted through the photoconductor layer 17 is not reflected on the surface of the substrate 9. The base layer 18 preferably has a volume resistivity of about 10 13 Ωcm or less so as to absorb the irradiated laser beam and prevent significant accumulation of charges. For example, the objective can be achieved by treating the surface of the Al substrate 9 with black alumite to form the base layer 18. Also,
A desired base layer 18 can also be formed by coating the surface of the substrate 9 with a mixture of carbon, coloring pigments, or dyes in a resin, or by vapor-depositing an inorganic pigment metal on the surface of the substrate 9. Can be formed. When the laser light used is near infrared to infrared light such as semiconductor laser light, it is particularly effective to form the base layer 18 using a blue to black pigment or dye. For example, carbon, nigrosine, methylene blue, copper phthalocyanine, etc., may be dispersed in a plastic such as polycarbonate, polyvinyl alcohol, polyvinylbazole, acrylic, acrylic butyl, styrene, etc., and then applied to a thickness of 0.1 to 0.5 μm. .
そしてこれらの場合、基板９の表面または下地
層１８の表面を無光沢表面として表面での反射光
の集中をなくすることにより一層よい結果が得ら
れる。 In these cases, better results can be obtained by making the surface of the substrate 9 or the surface of the underlayer 18 a matte surface to eliminate concentration of reflected light on the surface.
また基板９そのものを光吸収性物質例えばカー
ボンを混入した樹脂でモールド成形して基板と下
地層を一体化してもよい。 Alternatively, the substrate 9 itself may be molded with a resin mixed with a light-absorbing substance, such as carbon, to integrate the substrate and the base layer.
第６図は第２図に示した多層構造の光導電記録
体に本発明を適用した例を示す。下地層１８は上
記実施例と同様であり、更に第２光導電体層１１
の境界面での光の反射を軽減するために、第２光
導電体層１１の境界における光学的性質（屈折
率）が除々に変化するように工夫した例である。
このようにすると、第２図で説明した反射光の干
渉を更に軽減することができる。第２光導電体層
１１がSe−Te層である場合には蒸着時にTeの蒸
発量を制御してTeの含有量を徐々に変化させる
ことにより屈折率が徐々に変化するようになる。 FIG. 6 shows an example in which the present invention is applied to the multilayered photoconductive recording medium shown in FIG. The base layer 18 is the same as that in the above embodiment, and the second photoconductor layer 11
This is an example in which the optical properties (refractive index) at the boundary of the second photoconductor layer 11 are gradually changed in order to reduce the reflection of light at the boundary surface of the second photoconductor layer 11.
In this way, the interference of reflected light explained with reference to FIG. 2 can be further reduced. When the second photoconductor layer 11 is a Se--Te layer, the refractive index is gradually changed by controlling the amount of Te evaporated during deposition and gradually changing the Te content.
このように下地層によつて基板表面での光の反
射量を軽減すること、光学的性質を徐々に変化さ
せて境界面での光反射量を軽減することは、第３
図、第４図に示した光導電記録体にも同様に適用
できる。 In this way, reducing the amount of light reflected on the substrate surface by using the underlayer and gradually changing the optical properties to reduce the amount of light reflected at the interface is the third method.
The present invention can be similarly applied to the photoconductive recording medium shown in FIGS.
そしてこのような光導電記録体に用いて、第１
図に示すように、帯電、露光、現像、転写工程を
実施すれば、半導体レーザ光などの可干渉光が光
導電体層の一部または全部を透過しても、電荷潜
像に干渉縞模様が発生しないので良画質の電子写
真記録が得られる。 Then, when used in such a photoconductive recording medium, the first
As shown in the figure, if the charging, exposure, development, and transfer steps are performed, even if coherent light such as semiconductor laser light passes through part or all of the photoconductor layer, interference fringes will appear on the latent charge image. Electrophotographic records of high image quality can be obtained since no blemishes occur.
以上のように本発明は、多層光導電記録体の基
板表面を光吸収層とすることにより、光導電体層
を透過した光が基板表面で反射して干渉し光導電
体層を縞模様に感光するのを軽減または防止し、
良画質の記録画像が得られる効果がある。 As described above, in the present invention, by using the substrate surface of a multilayer photoconductive recording material as a light absorption layer, light transmitted through the photoconductor layer is reflected on the substrate surface and interferes, causing the photoconductor layer to have a striped pattern. reduce or prevent exposure to light;
This has the effect of producing recorded images of good quality.
第１図は本発明を適用するレーザビームプリン
タの構造図、第２図〜第４図は多層の光導電記録
体の干渉縞発生現象説明図、第５図、第６図は本
発明になる記録装置の光導電記録体の縦断面図で
ある。
９……基板、１７……光導電体層、１８……光
吸収性下地層。
Fig. 1 is a structural diagram of a laser beam printer to which the present invention is applied, Figs. 2 to 4 are illustrations of the phenomenon of interference fringe generation in a multilayer photoconductive recording medium, and Figs. 5 and 6 are according to the present invention. FIG. 2 is a longitudinal cross-sectional view of a photoconductive recording medium of the recording device. 9...Substrate, 17...Photoconductor layer, 18...Light-absorbing base layer.
Claims (1)
の表面に半導体レーザ光を照射し光導電体層を感
光して電荷潜像を形成する電子写真記録装置にお
いて、前記光導電体層は、前記半導体レーザ光を
実質的に吸光せずに透過する第１光導電体層と、
前記半導体レーザ光の一部を吸光し他を透過し、
内部で入射する半導体レーザ光と前記光導電記録
体の基板表面で反射する半導体レーザ光とが干渉
して、光の強弱縞模様をつくり得る程度の厚さの
第２光導電体層とが積層されて形成され、前記光
導電体層を透過した半導体レーザ光を吸収する光
吸収層を前記光導電記録体の基板表面に設けたこ
とを特徴とする電子写真記録装置。1. In an electrophotographic recording device in which a surface of a photoconductive recording medium having a photoconductor layer formed on a substrate is irradiated with semiconductor laser light to expose the photoconductor layer to form a charge latent image, the photoconductor layer is , a first photoconductor layer that transmits the semiconductor laser light without substantially absorbing it;
absorbing a part of the semiconductor laser light and transmitting the other part,
A second photoconductor layer is laminated with a thickness such that a semiconductor laser light incident therein and a semiconductor laser light reflected on the substrate surface of the photoconductive recording body interfere with each other to create a striped pattern of light intensity. 1. An electrophotographic recording apparatus, characterized in that a light absorption layer is provided on the surface of the substrate of the photoconductive recording body, the light absorption layer being formed by the photoconductive layer and absorbing the semiconductor laser light transmitted through the photoconductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5065781A JPS57165845A (en) | 1981-04-06 | 1981-04-06 | Electrophotographic recorder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5065781A JPS57165845A (en) | 1981-04-06 | 1981-04-06 | Electrophotographic recorder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57165845A JPS57165845A (en) | 1982-10-13 |
| JPH0319541B2 true JPH0319541B2 (en) | 1991-03-15 |
Family
ID=12865015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5065781A Granted JPS57165845A (en) | 1981-04-06 | 1981-04-06 | Electrophotographic recorder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57165845A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58171057A (en) * | 1982-02-24 | 1983-10-07 | リツエンツイア・パテント−フエルヴアルツングス−ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Electrophotographic recording material for monocolor light source |
| US4675263A (en) | 1984-03-12 | 1987-06-23 | Canon Kabushiki Kaisha | Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate |
| US4678733A (en) | 1984-10-15 | 1987-07-07 | Canon Kabushiki Kaisha | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
| JPS61107248A (en) * | 1984-10-31 | 1986-05-26 | Canon Inc | Laminate type electrophotographic sensitive body |
| JPS6289064A (en) | 1985-10-16 | 1987-04-23 | Canon Inc | Light receiving material |
| JPS6290663A (en) | 1985-10-17 | 1987-04-25 | Canon Inc | Light receiving member |
| JPS62106468A (en) | 1985-11-01 | 1987-05-16 | Canon Inc | Light receiving member |
| JPS62106470A (en) | 1985-11-02 | 1987-05-16 | Canon Inc | Light receiving member |
| JPH0282263A (en) * | 1988-09-20 | 1990-03-22 | Canon Inc | Electrophotographic sensitive body |
| JPH03109569A (en) * | 1989-09-25 | 1991-05-09 | Fuji Xerox Co Ltd | Electrophotographic sensitive body and manufacture of the same |
| EP0810099A3 (en) * | 1996-05-28 | 1998-07-22 | Eastman Kodak Company | A laser-absorbent imaging drum for scanners |
| US6034714A (en) * | 1997-04-11 | 2000-03-07 | Eastman Kodak Company | Method and apparatus for preventing transient oscillations in a focusing beam of scanners |
| JP3157784B2 (en) | 1998-08-19 | 2001-04-16 | 新潟日本電気株式会社 | Electrophotographic photoreceptor and method of manufacturing the same |
| JP4488470B2 (en) | 2000-04-17 | 2010-06-23 | 株式会社リコー | Image forming system, image forming apparatus, and electrophotographic photosensitive member |
| KR20000072787A (en) * | 2000-09-27 | 2000-12-05 | 박광서 | method of aluminum sensitive drum |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107247A (en) * | 1980-01-31 | 1981-08-26 | Ricoh Co Ltd | Image recording method |
-
1981
- 1981-04-06 JP JP5065781A patent/JPS57165845A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107247A (en) * | 1980-01-31 | 1981-08-26 | Ricoh Co Ltd | Image recording method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57165845A (en) | 1982-10-13 |
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