JPH0210948B2 - - Google Patents

Info

Publication number
JPH0210948B2
JPH0210948B2 JP56046548A JP4654881A JPH0210948B2 JP H0210948 B2 JPH0210948 B2 JP H0210948B2 JP 56046548 A JP56046548 A JP 56046548A JP 4654881 A JP4654881 A JP 4654881A JP H0210948 B2 JPH0210948 B2 JP H0210948B2
Authority
JP
Japan
Prior art keywords
light
photoconductor
recording medium
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56046548A
Other languages
Japanese (ja)
Other versions
JPS57161869A (en
Inventor
Masayasu Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koki Holdings Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Koki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Koki Co Ltd filed Critical Hitachi Ltd
Priority to JP4654881A priority Critical patent/JPS57161869A/en
Publication of JPS57161869A publication Critical patent/JPS57161869A/en
Publication of JPH0210948B2 publication Critical patent/JPH0210948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Description

【発明の詳細な説明】 本発明は電子写真法にかかり特に電気的潜像を
形成する光導電体とその記録法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to electrophotography, and more particularly to a photoconductor for forming an electrical latent image and a recording method thereof.

第1図は本発明が適用されうるレーザビームプ
リンタの構成を示したものである。光導電ドラム
1を帯電器2にて一様に帯電する。次に、レーザ
ビーム光像3をドラム軸と平行に走査しながら照
射する。こうして作られたドラム上の電荷潜像を
現像器4にて現像し、トナー像をドラム上に形成
する。次にこれを記録紙5に転写器6による転写
用のコロナ電荷を作用せしめながら転写する。転
写後消去ランプにて残像を消去した後、ドラム上
に残留するトナー像をクリーナにて清掃する。
FIG. 1 shows the configuration of a laser beam printer to which the present invention can be applied. A photoconductive drum 1 is uniformly charged with a charger 2. Next, the laser beam image 3 is irradiated while scanning in parallel to the drum axis. The charge latent image thus created on the drum is developed by a developing device 4 to form a toner image on the drum. Next, this is transferred onto the recording paper 5 while a transfer device 6 applies a corona charge for transfer. After the afterimage is erased using a post-transfer erasing lamp, the toner image remaining on the drum is cleaned using a cleaner.

以上の如くにして形成されたトナー像は、ドラ
ム上の電荷像に対応したものが得られるが、使用
する光像がレーザビームで代表される可干渉性単
色光であるため不都合が生ずる。すなわち、レー
ザビーム光をドラムに照射した際レーザ光が光導
電体層の感光部で干渉を起し、光の縞模様を形成
するため、光照射により作られた電荷潜像も縞模
様となる。そのため、現像転写されたトナー像も
濃淡の模様が重畳したものとなる。この模様は、
像の中間調や背景部に生じやすい。こうして生じ
た模様をなくすには従来現像を便調となし、露光
オーバにする手段がとられたが、中間調の再現が
乏しくなつたり、細線が飛んでしまう等の欠点が
あつた。また、現像方法も、このような模様がで
きにくい反転現像(露光した部分にトナーを付着
させる)をとり、正規現像方法を用いることはさ
けざるを得なかつた。
Although the toner image formed in the manner described above corresponds to the charge image on the drum, a problem arises because the optical image used is coherent monochromatic light, typically a laser beam. In other words, when the drum is irradiated with laser beam light, the laser light causes interference in the photosensitive area of the photoconductor layer, forming a striped pattern of light, so the latent charge image created by the light irradiation also becomes a striped pattern. . Therefore, the developed and transferred toner image also has a superimposed pattern of light and shade. This pattern is
This tends to occur in the midtones and background areas of images. In order to eliminate the pattern thus generated, conventional methods have been used to adjust the development and overexpose the image, but these methods have had drawbacks such as poor reproduction of intermediate tones and the loss of fine lines. Further, as for the development method, it was necessary to use reversal development (adhering toner to the exposed area), which is less likely to produce such a pattern, and to avoid using the regular development method.

本発明はかかる不都合が生じないような光導電
体とその記録方法を提供することを目的とし、そ
のために、光導電体層内におけるレーザビーム光
の干渉を減少または防止するようにしたものであ
る。
An object of the present invention is to provide a photoconductor and a recording method therefor that do not cause such inconvenience, and for this purpose, interference of laser beam light within the photoconductor layer is reduced or prevented. .

第2図〜5図は、従来の種々の光導電体の例と
干渉縞の出来る様子を示したものである。
FIGS. 2 to 5 show examples of various conventional photoconductors and how interference fringes are formed.

第2図は光導体層の中間部に主感光層をもつ構
造になつているもので、基板9上に10,11,
12の光導電体,,が積層してある。この
光導体の主感光層は光導電体層11である。例え
ば鏡面仕上したAl基板上に、光導層10とし
てSe50μ、光導電層11としてSe―Te1μ、光
導電層12としてSe2μを蒸着したもので、光
導電層のSe―Teを5〜20原子%を含むものを
用いると600〜900nmの光に高感度をも光導電体
となる。しかも、光導電体層,は600nm以上
の光を良く通すものとなる。かかる構成の光導電
体に例えば780nmの半導体レーザ光l1 l2を照射す
ると、レーザ光l1 l2は光導電層を通過し、光導
電層で1部は吸光され感光するが、1部は通過
し、1部は光導電層との境界面で反射する。
光導電層を通過し、光導電層を通過したレー
ザビーム光は基板9で反射し、再び光導電層を
通り、光導電層へと進む。このとき反射光l1′と
l2″,l3′とl1とが干渉し、光導電層の内部で光
の強弱縞模様をつくる。この光の強弱縞模様で光
導電層を感光するため、電荷潜像はこれに対応
したものとなる。上の説明では縞模様を形成する
代表的な光の経路を示したが、他にも光導電層の
境界面での反射光が存在し干渉縞を形成する原因
となる。
FIG. 2 shows a structure having a main photosensitive layer in the middle of the photoconductor layer, with 10, 11,
Twelve photoconductors, , are stacked. The main photosensitive layer of this photoconductor is the photoconductor layer 11. For example, on a mirror-finished Al substrate, 50μ of Se for the photoconductive layer 10, 1μ of Se-Te for the photoconductive layer 11, and 2μ of Se for the photoconductive layer 12 are deposited. When used, it becomes a photoconductor with high sensitivity to light of 600 to 900 nm. Moreover, the photoconductor layer can easily transmit light of 600 nm or more. When a photoconductor having such a structure is irradiated with semiconductor laser light l 1 l 2 of, for example, 780 nm, the laser light l 1 l 2 passes through the photoconductive layer, and part of it is absorbed and exposed to light by the photoconductive layer, but part of it is passes through, and a portion is reflected at the interface with the photoconductive layer.
The laser beam light that has passed through the photoconductive layer is reflected by the substrate 9, passes through the photoconductive layer again, and advances to the photoconductive layer. At this time, the reflected light l 1 ′ and
l 2 ″, l 3 ′ and l 1 interfere, creating a pattern of light intensity stripes inside the photoconductive layer. Since the photoconductive layer is exposed to this light intensity pattern, a latent charge image is formed by this. The above explanation shows a typical path of light that forms a striped pattern, but there are other types of reflected light at the interface of the photoconductive layer that also cause the formation of interference fringes. .

第3図は基板9上に光導電層()13、光導
電層()14を形成し、光導電層()が感光
層として働き、光導電層()は電荷を搬送する
機能を持たせた光導電体を示す図である。第3図
においてレーザ光l1は光導電層()内で反射
し、レーザ光l2と干渉する。
In FIG. 3, a photoconductive layer ( ) 13 and a photoconductive layer ( ) 14 are formed on a substrate 9, the photoconductive layer ( ) acts as a photosensitive layer, and the photoconductive layer ( ) has a function of transporting charges. FIG. 3 is a diagram showing a photoconductor. In FIG. 3, laser light l 1 is reflected within the photoconductive layer ( ) and interferes with laser light l 2 .

以上のようにして光導電体内で干渉を起した
り、上記説明以外に光導電体を含む記録体の構成
要素である表面保護層、表面絶縁層、下地層内で
干渉を起しその光が光導電層を感光するので前述
した縞模様が画像に発生する。
As described above, interference may occur within the photoconductor, or in addition to the above explanation, interference may occur within the surface protective layer, surface insulating layer, and underlayer, which are the constituent elements of the recording medium including the photoconductor. Since the photoconductive layer is exposed to light, the above-mentioned striped pattern occurs in the image.

本発明はかかる干渉縞模様を減少、除去するた
めのもので、第2,3図における多層感光層の境
界面での反射を減少、除去することで、上記目的
を達成する方法を提供するものである。干渉は多
層構造の層の境界での反射あるいは基板での反射
があるために生じるものである。基板との反射に
基づく干渉を防ぐには 基板を光吸収体にする。
The present invention is intended to reduce and eliminate such interference fringe patterns, and provides a method for achieving the above object by reducing and eliminating reflections at the interfaces of multilayer photosensitive layers as shown in FIGS. 2 and 3. It is. Interference occurs due to reflections at the boundaries of layers in a multilayer structure or reflections at the substrate. To prevent interference due to reflection with the substrate, make the substrate a light absorber.

基板の表面を光散乱性にする。 Make the surface of the substrate light scattering.

ことが考えられる。しかし、層間の境界面での反
射は、この互いに隣接する光導電体層の境界での
屈折率の急激な変化がある場合(たとえば、隣接
する層の組成物が異なる場合)に生じるものであ
るから、この反射をなくすには境界面での屈折率
を急激に変化させずに、反射が起こらない程度に
徐々に変化させることである。このための方法と
しては、層を蒸着する際に、金属の蒸発量を制御
すること、すなわち、層の界面での組成を徐々に
変えることがある。第4図〜第6図は本発明の実
施例である。
It is possible that However, reflections at interlayer interfaces occur when there is an abrupt change in the refractive index at the boundaries of adjacent photoconductor layers (e.g., when adjacent layers have different compositions). Therefore, in order to eliminate this reflection, the refractive index at the interface should not be changed suddenly, but should be changed gradually to the extent that no reflection occurs. One way to do this is to control the amount of metal evaporated while depositing the layer, ie to gradually change the composition at the interface of the layer. 4 to 6 show embodiments of the present invention.

第4図において光導電体層()11の境界に
おける光学的性質(屈折率)が徐々に変化するよ
うになし、境界面での反射を抑え第2図における
l1′l2″の干渉を減少せしめたものである。第2図
の具体例としてあげたSe―Te層である場合、Te
の含有量を光導電層の境界面で徐々に変わる様、
蒸着時にTeの蒸発量を抑制することにより得ら
れる。この方法を第3図の光導電体層()14
にも適用すると、光導電体層()13と光導電
体層()14との境界での反射を減少させるこ
とができる。
In FIG. 4, the optical properties (refractive index) at the boundary of the photoconductor layer ( ) 11 are gradually changed to suppress reflection at the boundary surface, and as shown in FIG.
This reduces the interference of
The content of
This can be obtained by suppressing the amount of Te evaporated during vapor deposition. This method is applied to the photoconductor layer ( ) 14 in FIG.
When applied to this method, reflection at the boundary between the photoconductor layer ( ) 13 and the photoconductor layer ( ) 14 can be reduced.

第5図は、第4図の方法に基板9での反射を防
止するため、光吸収層15を設ける方法を併用し
たものである。光吸収層15は例えばAl基板を
黒色アルマイト処理(酸化皮膜処理)や、樹脂中
にカーボン、着色顔料、染料を混入したものを
0.1〜1μm程度に塗工しても良い。かかる方法を
併用すれば、干渉縞は全く発生しなくなる。
FIG. 5 shows a method in which a method of providing a light absorption layer 15 to prevent reflection on the substrate 9 is combined with the method of FIG. The light absorption layer 15 is made of, for example, an Al substrate treated with black alumite treatment (oxidized film treatment), or a resin mixed with carbon, color pigments, or dyes.
It may be applied to a thickness of about 0.1 to 1 μm. If such methods are used in combination, no interference fringes will occur at all.

第6図は、第4図の方法に基板9として光散乱
性表面をもつものを用い、基板表面での反射光を
散乱せしむることで干渉をなくす方法を併用した
もので、かかる表面は、梨地処理仕上げ、サンド
ブラスト仕上げ等により得ることができる。
FIG. 6 shows the method of FIG. 4 combined with a method of eliminating interference by using a substrate 9 having a light-scattering surface and scattering the reflected light on the substrate surface. , satin finish, sandblasting, etc.

かかる、第5,6図の方法は、第3図の如き構
成の光導電体の場合にも適用できる。
The methods shown in FIGS. 5 and 6 can also be applied to the photoconductor having the structure shown in FIG.

本発明では以上の如く、干渉が発生しない様多
層光導電体の境界における反射を減少、除去した
電子写真用光導電記録体を用い、記録体の1部又
は全部を透過する可干渉性光像を上述記録体に照
射し、電荷潜像を形成するものであるから、画像
中に干渉性縞状の像が生じないので良画像が得ら
れる。
As described above, the present invention uses a photoconductive recording material for electrophotography in which reflections at the boundaries of a multilayer photoconductor are reduced or eliminated so that interference does not occur, and a coherent optical image is transmitted through part or all of the recording material. Since the above-mentioned recording medium is irradiated with a charge latent image to form a charge latent image, a good image can be obtained since interference striped images are not generated in the image.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はレーザビームプリンタの説明図、第
2,3図はレーザビームによる干渉縞が生ずる例
を説明する図、第4〜6図は本発明の実施例であ
る。 9…基板、10〜12…光導電層〜。
FIG. 1 is an explanatory diagram of a laser beam printer, FIGS. 2 and 3 are diagrams illustrating an example in which interference fringes are produced by a laser beam, and FIGS. 4 to 6 are examples of the present invention. 9...Substrate, 10-12...Photoconductive layer.

Claims (1)

【特許請求の範囲】 1 記録体に可干渉性光による光像を照射し、電
気的潜像を形成する電子写真法において、 可干渉性光として、記録体を透過する波長の光
を用い、 記録体として、多層構造の光導電体を用い、互
いに隣接する光導電体の境界における屈折率を
徐々に変化せしめた光導電体を用い、かつ基板と
前記光導電体との境界に光吸収層を設けて電荷潜
像を形成することを特徴とする電子写真法。 2 記録体に可干渉性光による光像を照射し、電
気的潜像を形成する電子写真法において、 可干渉性光として、記録体を透過する波長の光
を用い、 記録体として、多層構造の光導電体を用い、互
いに隣接する光導電体の境界における屈折率を
徐々に変化せしめた光導電体を用い、かつ基板の
光導電体層側の表面を光散乱性表面として電荷潜
像を形成することを特徴とする電子写真法。
[Claims] 1. In an electrophotographic method in which a recording medium is irradiated with an optical image of coherent light to form an electrical latent image, light having a wavelength that passes through the recording medium is used as the coherent light, As a recording medium, a multilayered photoconductor is used, in which the refractive index is gradually changed at the boundaries between adjacent photoconductors, and a light absorption layer is provided at the boundary between the substrate and the photoconductor. An electrophotographic method characterized by forming a charge latent image. 2 In electrophotography, in which a recording medium is irradiated with an optical image of coherent light to form an electrical latent image, light of a wavelength that passes through the recording medium is used as the coherent light, and the recording medium has a multilayer structure. A photoconductor is used in which the refractive index at the boundary between adjacent photoconductors is gradually changed, and the surface of the substrate on the photoconductor layer side is used as a light-scattering surface to form a charge latent image. An electrophotographic method characterized by forming.
JP4654881A 1981-03-31 1981-03-31 Electrophotographic method Granted JPS57161869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4654881A JPS57161869A (en) 1981-03-31 1981-03-31 Electrophotographic method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4654881A JPS57161869A (en) 1981-03-31 1981-03-31 Electrophotographic method

Publications (2)

Publication Number Publication Date
JPS57161869A JPS57161869A (en) 1982-10-05
JPH0210948B2 true JPH0210948B2 (en) 1990-03-12

Family

ID=12750360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4654881A Granted JPS57161869A (en) 1981-03-31 1981-03-31 Electrophotographic method

Country Status (1)

Country Link
JP (1) JPS57161869A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60112049A (en) * 1983-11-22 1985-06-18 Shindengen Electric Mfg Co Ltd Electrophotographic sensitive body

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166648A (en) * 1979-06-15 1980-12-25 Hitachi Ltd Photosensitive film and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166648A (en) * 1979-06-15 1980-12-25 Hitachi Ltd Photosensitive film and its production

Also Published As

Publication number Publication date
JPS57161869A (en) 1982-10-05

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