JPH03193467A - Manufacture of thermal head - Google Patents

Manufacture of thermal head

Info

Publication number
JPH03193467A
JPH03193467A JP33685289A JP33685289A JPH03193467A JP H03193467 A JPH03193467 A JP H03193467A JP 33685289 A JP33685289 A JP 33685289A JP 33685289 A JP33685289 A JP 33685289A JP H03193467 A JPH03193467 A JP H03193467A
Authority
JP
Japan
Prior art keywords
layer
chip
thermal head
common electrode
solder dam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33685289A
Other languages
Japanese (ja)
Inventor
Toshitaka Tamura
敏隆 田村
Hiroshi Suzuki
宏 鈴木
Masato Kawanishi
真人 川西
Mitsuhiko Yoshikawa
吉川 光彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP33685289A priority Critical patent/JPH03193467A/en
Publication of JPH03193467A publication Critical patent/JPH03193467A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the manufacturing cost by a method wherein an heat accumulation layer of a heating element and a solder dam for face down bonding of an IC chip are formed simultaneously of a same material. CONSTITUTION:After forming a conductor layer film on a substrate 1 made of ceramic and high heat resistant resin, an individual electrode 2a and a common electrode 2b are formed by patterning. Then, after applying polyimide resin having high heat resistance and high adhesion all over to an upper material of those electrodes 2a, 2b, a heat accumulation layer 4a is formed in a clearance between the individual electrode 2a and the common electrode 2b, and solder dam 4b is formed around a connection part of face down bonding of an IC chip respectively by specified dimensions simultaneously within a same process, which are cured. A heating element layer 5 is formed thereon by a vapor deposition method, a sputtering method, or a plasma CVD method, and a protective film 6 is formed to a part other than the face down bonding part of the IC chip. Since a forming process of the heat accumulation layer and a forming process of the solder dam are performed in the same processing, a fixed yield may be improved at a low cost.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 この発明は、ファクシミリや各種プリンター等に使用さ
れる感熱記録用のサーマルヘッドに係り、さらに詳しく
は、複数の発熱抵抗体素子を同一絶縁基板上に配置し、
印字すべき情報に合わせて、この発熱抵抗体素子を通電
発熱させて感熱記録紙を発色印字させたりあるいは熱転
写リボンを介して普通紙に転写記録させるサーマルヘッ
ドの製造方法に関する。
Detailed Description of the Invention (a) Industrial Application Field This invention relates to a thermal head for heat-sensitive recording used in facsimile machines, various printers, etc. Place it on the board,
The present invention relates to a method for manufacturing a thermal head that energizes the heating resistor element to generate heat in accordance with the information to be printed, thereby printing in color on thermal recording paper or transferring and recording onto plain paper via a thermal transfer ribbon.

(ロ)従来の技術 従来のサーマルヘッドにおいて、発熱抵抗体駆動用IC
チップと、各発熱抵抗体に接続される個別電極との電気
的接続方法は、ワイヤーボンディング法と、はんだバン
プによるフェイスダウンボンディング法の2種類の方法
がある。このフェイスダウンボンディング法では、IC
チップ側に形成されたはんだバンプと絶縁基板上に形成
されたリード電極とをはんだ溶融によって接合して電気
的に接続しているが、はんだバンプの直径が約100μ
―と小さく、また接続端子数も各ICチップ1個に対し
約90ケ所ある為、サーマルヘッド全体では8ドツト/
R11の場合、A4サイズ用で約2000ケ所、B4サ
イズ用で約3000ケ所の接続ポイント数となる。この
櫟に寸法が小さ(数の多いはんだ付けを確実に接続する
為には、接続用リードI!極のはんだ接続を均一に良好
な状態に保つと同時に、tCチップ上のはんだバンブが
溶融して不必要な電極上にはんだ付けされない様にする
ためにはんだダムが必要となる。このはんだダムの材料
としては、はんだ付は温度以上の耐熱性とファインパタ
ーン加工性さらに基板および導体材料に対して高い密着
性が要求される。
(b) Conventional technology In a conventional thermal head, an IC for driving a heating resistor is used.
There are two methods for electrically connecting the chip and the individual electrodes connected to each heating resistor: a wire bonding method and a face-down bonding method using solder bumps. In this face-down bonding method, the IC
The solder bumps formed on the chip side and the lead electrodes formed on the insulating substrate are joined and electrically connected by melting the solder, but the diameter of the solder bumps is approximately 100 μm.
-, and the number of connection terminals is approximately 90 for each IC chip, so the entire thermal head has 8 dots/
In the case of R11, the number of connection points is approximately 2000 for A4 size and approximately 3000 for B4 size. This wire has small dimensions (in order to reliably connect a large number of solders, it is necessary to keep the solder connections of the connecting leads I! poles uniformly in good condition, and at the same time prevent the solder bumps on the tC chip from melting. A solder dam is required to prevent soldering onto unnecessary electrodes.The material for this solder dam must have heat resistance above the soldering temperature, fine pattern processability, and compatibility with substrate and conductor materials. High adhesion is required.

第2図は従来法による薄膜サーマルヘッドの一例を示す
断面図である。ここで7はアルミナ等のセラミック基板
や金属基板が用いられる。その上層の8は蓄熱層として
の、ガラスグレーズであり基材の上に印刷法等により焼
成して形成されている。これらの基板の上にサーマルヘ
ッドの発熱体となる抵抗層9をスパッタ法、蒸着法ある
いはプラズマCVD法等により形成し、続いてアルミニ
ウムや金等でできた電極層10を同じ(スパッタ法や蒸
着法にて形成し、フォトリソグラフィ技術によりサーマ
ルヘッドの発熱素子に当たる部分の電極層をエツチング
により除去した後、保護膜層11を、フェイスダウンボ
ンディングするIcチップ接続部以外に蒸着又はスパッ
タ法等で形成するか、プラズマCVD法等で全面に形成
後にICチップ接続部の上の膜をエッチングオ〕して形
成し、最終的にICチップ接続部に対しはんだダム材の
ポリイミド樹脂等を印刷法、スピンナー、ロールコータ
−等にて形成し、はんだ接続部をエツチングオフしては
んだダム12を形成している。
FIG. 2 is a sectional view showing an example of a conventional thin film thermal head. Here, 7 is a ceramic substrate made of alumina or the like or a metal substrate. The upper layer 8 is a glass glaze serving as a heat storage layer, and is formed by firing on the base material by a printing method or the like. On these substrates, a resistive layer 9 that becomes the heating element of the thermal head is formed by sputtering, vapor deposition, plasma CVD, etc., and then an electrode layer 10 made of aluminum, gold, etc. is formed using the same method (sputtering, vapor deposition, etc.). After removing the electrode layer corresponding to the heating element of the thermal head by etching using a photolithography technique, a protective film layer 11 is formed by vapor deposition or sputtering on the area other than the IC chip connection area to be face-down bonded. Alternatively, after forming the film on the entire surface using a plasma CVD method or the like, etching the film above the IC chip connection part, and finally applying a solder dam material such as polyimide resin to the IC chip connection part using a printing method or a spinner. , a roll coater or the like, and the solder connection portion is etched off to form the solder dam 12.

(ハ)発明が解決しようとする課題 このように、従来の薄膜サーマルヘッドにおいては、ア
ルミナ等の絶縁基板上に、印刷法等で形成されたガラス
グレーズ層の蓄熱層上に、薄膜抵抗体を形成し、その上
部に電極層および保護膜層を形成し、発熱抵抗体駆動用
ICチップ接続部は、電極層の上にはんだダム材として
のポリイミド樹脂を形成しているため、フェイスダウン
ボンディング法で駆動用ICを接続する場合、はんだダ
ムを形成するための専用の繁雑な工程が必要であった。
(c) Problems to be Solved by the Invention As described above, in conventional thin film thermal heads, a thin film resistor is placed on a heat storage layer of a glass glaze layer formed by a printing method etc. on an insulating substrate such as alumina. An electrode layer and a protective film layer are formed on top of the electrode layer, and the connection part of the IC chip for driving the heat generating resistor is formed using the face-down bonding method because polyimide resin is formed as a solder dam material on the electrode layer. When connecting a driving IC using a conventional method, a dedicated and complicated process for forming a solder dam was required.

この発明はこのような事情を考慮してなされたしので、
蓄熱層の形成工程とはんだダム形成工程と同一工程で行
う事により低コストで工程歩留りを向上させろことが可
能なサーマルヘッドの製造方法を提供するものである。
This invention was made taking these circumstances into consideration, so
The present invention provides a method of manufacturing a thermal head that can improve the process yield at low cost by performing the heat storage layer forming step and the solder dam forming step in the same step.

(ニ)ts、題を解決するための手段 この発明は、基板上に発熱抵抗体層と、発熱抵抗体層に
通電するための個別電極および共通電極を設け、個別電
極に発熱抵抗体駆動用ICをフェイスダウンボンド法に
より接続するランドを設けたサーマルヘッドの製造方法
であって、まず、基板上に個別電極および共通電極を形
成し、次に、個別電極と共通電極間に蓄熱層を、個別X
極のランド近傍にはんだダムを、同一樹脂を用いて同一
工程で形成し、次に、蓄熱層の上に個別電極から共通電
極にわたる発熱抵抗体層を形成し、さらに、発熱抵抗層
を覆う保護層を形成することを特徴とするサーマルヘッ
ドの製造方法である。
(d) TS, Means for Solving the Problem This invention provides a heating resistor layer on a substrate, an individual electrode for supplying current to the heating resistor layer, and a common electrode, and the individual electrodes are used for driving the heating resistor. A method for manufacturing a thermal head provided with a land for connecting ICs by face-down bonding, in which first, individual electrodes and a common electrode are formed on a substrate, and then a heat storage layer is formed between the individual electrodes and the common electrode. Individual X
A solder dam is formed near the land of the pole using the same resin in the same process. Next, a heat generating resistor layer is formed on the heat storage layer from the individual electrodes to the common electrode, and a protection layer is further formed to cover the heat generating resistor layer. This is a method for manufacturing a thermal head characterized by forming a layer.

(ホ)作用 蓄熱層とはんだダムが、同一材料、同一工程で形成され
るため、サーマルヘッドの製作工作が低減し、歩留りが
向上する。
(e) Since the functional heat storage layer and the solder dam are formed using the same material and in the same process, the manufacturing work of the thermal head is reduced and the yield is improved.

(へ)実施例 以下、図面に示す実施例に基づいてこの発明を説明する
(f) Examples The present invention will be described below based on examples shown in the drawings.

第1図は、この発明の一実施例を示すサーマルヘッドの
断面図である。lは基板であり、これにはアルミナ等の
セラミック絶縁基板や高耐熱樹脂基板が使用される。基
板lの上に、導体層を成膜した後、パターンニングして
個別電極2aと共通iI極2bを形成する。個別電極2
aの少なくともICチップをフェイスダウンボンディン
グする端子部分についてははんだ付可能な金属、例えば
金、ニッケル、銅、スズ、鉛又は銀等にて形成される。
FIG. 1 is a sectional view of a thermal head showing an embodiment of the present invention. 1 is a substrate, and a ceramic insulating substrate such as alumina or a high heat-resistant resin substrate is used for this. After forming a conductor layer on the substrate l, it is patterned to form individual electrodes 2a and common iI electrodes 2b. Individual electrode 2
At least the terminal portion a for face-down bonding the IC chip is made of a solderable metal such as gold, nickel, copper, tin, lead, or silver.

この実施例では、電極2a、2b全体に金メツキ層3を
無電解メツキ法にて形成する。このように形成された電
極2a、2bの上部に高信頼性、高耐熱性および高密着
性を有するポリイミド樹脂を全体に塗布後、フォトリソ
グラフィー法により、個別電極2aと共通電極2bの間
隙に蓄熱層4λを、ICチップをフェイスダウンボンデ
ィングする接続部(ランド)の周りにはんだダム4bを
、それぞれ所定の寸法で同時に同−工捏内で形成し、硬
化させる。その上に、発熱体としての発熱抵抗体層5を
従来と同様に蒸着法、スパッタ法又はプラズマC’V 
D法にて形成し、最終的に保護膜6をICチップのフェ
イスダウンボンディング部分以外に形成してサーマルヘ
ッドが完成する。
In this embodiment, a gold plating layer 3 is formed over the entire electrodes 2a and 2b by electroless plating. After applying a polyimide resin having high reliability, high heat resistance, and high adhesion to the entire upper part of the electrodes 2a and 2b formed in this way, heat is stored in the gap between the individual electrodes 2a and the common electrode 2b using a photolithography method. In the layer 4λ, solder dams 4b are simultaneously formed in the same mold around the connecting portions (lands) where the IC chip is face-down bonded, each having a predetermined dimension, and cured. On top of that, a heating resistor layer 5 as a heating element is formed by vapor deposition, sputtering or plasma C'V as in the past.
The thermal head is completed by forming the protective film 6 by the D method and finally forming the protective film 6 on the area other than the face-down bonding portion of the IC chip.

(ト)発明の効果 この発明によれば、発熱抵抗体の蓄熱層とICチップの
フェイスダウンボンディング用はんだダムを同一材料に
て同時に形成する事により、製造コストを低く歩留りを
向上させることが可能となり、安価なサーマルヘッドを
提供することができる。
(G) Effects of the Invention According to this invention, by simultaneously forming the heat storage layer of the heating resistor and the solder dam for face-down bonding of the IC chip from the same material, it is possible to lower manufacturing costs and improve yield. Therefore, an inexpensive thermal head can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例を示すサーマルヘッドの構
成説明図、第2図は従来例の第1図対応図である。 1・・・・・・基板、    2a・・・・・・個別電
極、2b・・・・・・共通電極、 4a・・・・・・蓄熱層、 4b・・・・・・はんだダム、 5・・・・・・発熱抵抗体層、 3・・・・・・金メツキ層、 6・・・・・・保護膜。
FIG. 1 is an explanatory diagram of the configuration of a thermal head showing an embodiment of the present invention, and FIG. 2 is a diagram corresponding to FIG. 1 of a conventional example. 1...Substrate, 2a...Individual electrode, 2b...Common electrode, 4a...Heat storage layer, 4b...Solder dam, 5 ...Heating resistor layer, 3...Gold plating layer, 6...Protective film.

Claims (1)

【特許請求の範囲】[Claims] 1、基板上に発熱抵抗体層と、発熱抵抗体層に通電する
ための個別電極および共通電極を設け、個別電極に発熱
抵抗体駆動用ICフェイスダウンボンド法により接続す
るランドを設けたサーマルヘッドの製造方法であって、
まず、基板上に個別電極および共通電極を形成し、次に
、個別電極と共通電極間に蓄熱層を、個別電極のランド
近傍にはんだダムを、同一樹脂を用いて同一工程で形成
し、次に、蓄熱層の上に個別電極から共通電極にわたる
発熱抵抗体層を形成し、さらに、発熱抵抗層を覆う保護
層を形成することを特徴とするサーマルヘッドの製造方
法。
1. A thermal head in which a heating resistor layer, individual electrodes and a common electrode for energizing the heating resistor layer are provided on a substrate, and a land is provided on each individual electrode to connect to the IC face-down bonding method for driving the heating resistor. A method of manufacturing,
First, individual electrodes and common electrodes are formed on the substrate, then a heat storage layer is formed between the individual electrodes and the common electrode, and a solder dam is formed near the lands of the individual electrodes using the same resin in the same process. A method for manufacturing a thermal head, comprising: forming a heat generating resistor layer extending from the individual electrodes to the common electrode on the heat storage layer; and further forming a protective layer covering the heat generating resistor layer.
JP33685289A 1989-12-25 1989-12-25 Manufacture of thermal head Pending JPH03193467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33685289A JPH03193467A (en) 1989-12-25 1989-12-25 Manufacture of thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33685289A JPH03193467A (en) 1989-12-25 1989-12-25 Manufacture of thermal head

Publications (1)

Publication Number Publication Date
JPH03193467A true JPH03193467A (en) 1991-08-23

Family

ID=18303254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33685289A Pending JPH03193467A (en) 1989-12-25 1989-12-25 Manufacture of thermal head

Country Status (1)

Country Link
JP (1) JPH03193467A (en)

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