JPH0319299B2 - - Google Patents

Info

Publication number
JPH0319299B2
JPH0319299B2 JP56044350A JP4435081A JPH0319299B2 JP H0319299 B2 JPH0319299 B2 JP H0319299B2 JP 56044350 A JP56044350 A JP 56044350A JP 4435081 A JP4435081 A JP 4435081A JP H0319299 B2 JPH0319299 B2 JP H0319299B2
Authority
JP
Japan
Prior art keywords
film
gas
reaction
substrate
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56044350A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57158369A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP4435081A priority Critical patent/JPS57158369A/ja
Publication of JPS57158369A publication Critical patent/JPS57158369A/ja
Publication of JPH0319299B2 publication Critical patent/JPH0319299B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
JP4435081A 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method Granted JPS57158369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4435081A JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4435081A JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Publications (2)

Publication Number Publication Date
JPS57158369A JPS57158369A (en) 1982-09-30
JPH0319299B2 true JPH0319299B2 (cs) 1991-03-14

Family

ID=12689060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4435081A Granted JPS57158369A (en) 1981-03-26 1981-03-26 Formation of dielectric film by plasma vapor phase method

Country Status (1)

Country Link
JP (1) JPS57158369A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506978B2 (ja) * 1988-08-22 1996-06-12 松下電器産業株式会社 チタン酸鉛薄膜の製造方法
JP3500787B2 (ja) * 1995-08-22 2004-02-23 ソニー株式会社 ビスマス化合物の製造方法とビスマス化合物の誘電体物質
CN104651805B (zh) * 2015-02-04 2017-05-03 昆明理工大学 一种超声波喷雾微波管式炉及运用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128600A (ja) * 1974-09-05 1976-03-10 Kitasato Gakuen Kayoseipurushianburuunoseizohoho
LU71343A1 (cs) * 1974-11-22 1976-03-17
US4252838A (en) * 1978-09-11 1981-02-24 Honeywell Inc. Glow discharge fabrication of transparent conductive coatings

Also Published As

Publication number Publication date
JPS57158369A (en) 1982-09-30

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