JPH03190215A - Coating method for resist film - Google Patents
Coating method for resist filmInfo
- Publication number
- JPH03190215A JPH03190215A JP33170889A JP33170889A JPH03190215A JP H03190215 A JPH03190215 A JP H03190215A JP 33170889 A JP33170889 A JP 33170889A JP 33170889 A JP33170889 A JP 33170889A JP H03190215 A JPH03190215 A JP H03190215A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- substrate
- resist
- processed
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 38
- 239000007788 liquid Substances 0.000 abstract description 24
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 239000007888 film coating Substances 0.000 description 13
- 238000009501 film coating Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 10
- 238000000926 separation method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 241001062872 Cleyera japonica Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
レジスト膜の塗布方法、特にスピンコード法により方形
状の被処理基板上にレジスト膜を均一な厚さに塗布する
方法に関し、
スピンコード法によるレジスト液塗布時における方形状
基板上の回転方向の縁端部に余剰のレジスト液が残留し
、その部分のレジスト膜が厚く盛り上がる現象を無くし
て均一な膜厚のレジスト膜を形成可能にすることを目的
とし、
スピンホルダーに設置した方形状の被処理基板上にレジ
スト液を滴下し、該スピンホルダーを回転せしめてレジ
スト膜を塗布する方法において、上記方形状の被処理基
板は、その一辺の縁端部を傾斜状に切除し、前記スピン
ホルダー上の回転中心と周縁部との間に前記傾斜した一
辺を回転方向に向けた状態に設置するように構成する。[Detailed Description of the Invention] [Summary] Regarding a method for applying a resist film, particularly a method for applying a resist film to a uniform thickness on a rectangular substrate to be processed using a spin code method, the present invention relates to a method for applying a resist film using a spin code method. The purpose of this technology is to eliminate the phenomenon in which excess resist liquid remains at the edges of a rectangular substrate in the rotating direction, causing the resist film to thicken and bulge in that area, thereby making it possible to form a resist film with a uniform thickness. In a method in which a resist solution is dropped onto a rectangular substrate to be processed placed on a spin holder and a resist film is applied by rotating the spin holder, the rectangular to be processed substrate has an edge portion on one side thereof. is cut out in an inclined shape and installed between the center of rotation and the peripheral edge on the spin holder with one inclined side facing the direction of rotation.
本発明はレジスト膜の塗布方法に係り、特にスピンコー
ド法により平行な一対の辺が他の一対の辺よりも長い方
形状の被処理基板上に、レジスト膜を均一な厚さに塗布
する方法に関するものである。The present invention relates to a method for applying a resist film, and in particular, a method for applying a resist film to a uniform thickness on a rectangular processing target substrate in which a pair of parallel sides are longer than the other pair of sides using a spin code method. It is related to.
基板上に所望のパターンを形成するために不必要な部分
を光学的及び化学的な処理により選択的に除去するフォ
トリソグラフィは、そのパターニング精度が高く、生産
性が高効率であるため、磁気ディスク装置における薄膜
磁気ヘッドの製造工程、或いは半導体装置の製造工程等
に広く用いられている。Photolithography, which selectively removes unnecessary parts by optical and chemical processing to form a desired pattern on a substrate, has high patterning accuracy and high productivity, so it is used for magnetic disks. It is widely used in the manufacturing process of thin film magnetic heads in devices, the manufacturing process of semiconductor devices, etc.
基板上に所望のパターンを高精度に形成するためには、
該基板上に均一な膜厚のパターニング用のマスクを形成
するレジスト膜を形成することが要求されるが、スピン
コード法により方形状の基板上にレジスト膜を形成する
場合、スピンホルダーに設置した基板の回転方向に向い
た端縁部上にレジスト液が溜り、形成されたレジスト膜
の膜厚が不均一になる傾向がある。このため、そのよう
なレジスト膜の膜厚の不均一を容易に解消し得るレジス
ト膜の塗布方法が必要とされている。In order to form a desired pattern on a substrate with high precision,
It is required to form a resist film that forms a patterning mask with a uniform film thickness on the substrate, but when forming a resist film on a rectangular substrate by the spin code method, it is necessary to form a resist film that forms a patterning mask with a uniform thickness. Resist liquid tends to accumulate on the edge of the substrate facing in the rotational direction, and the thickness of the formed resist film tends to be non-uniform. Therefore, there is a need for a resist film coating method that can easily eliminate such non-uniformity in the thickness of the resist film.
従来、例えば磁気ディスク装置に用いる薄膜磁気ヘント
スライダの製造においては、第7図(a)に示すように
スライダとなるセラミックからなるブロック基板1上に
多数対の薄膜磁気ヘッドパターン2をフォトリソグラフ
ィ工程により一括形成し、かかるブロック基板1を前記
薄膜磁気ヘッドパターン2の横列単位に切り離し、その
切り離した方形状の分離ブロック基板3のスライダ浮上
面を形成すべき加工面3aにレジスト膜を塗布形成し、
該レジスト膜を選択的に露光及び現像して所定のマスク
パターンを形成し、そのマスクパターンより露出する基
板面を選択的にエツチングすることにより、各薄膜磁気
ヘッドパターン2に対応する複数のスライダ浮上面4を
形成する、その後、該分離ブロック基板3を薄膜磁気ヘ
ッドパターン2と対応のスライダ浮上面4を有するヘッ
ドスライダ単位にそれぞれ切断分離して多数個の薄膜磁
気へラドスライダ5を形成する。Conventionally, in manufacturing a thin film magnetic hent slider used in a magnetic disk device, for example, as shown in FIG. 7(a), a large number of pairs of thin film magnetic head patterns 2 are formed on a block substrate 1 made of ceramic, which becomes a slider, by a photolithography process. The block substrate 1 is separated into row units of the thin film magnetic head pattern 2, and a resist film is applied and formed on the processed surface 3a of the separated rectangular separated block substrate 3 on which the slider air bearing surface is to be formed. ,
By selectively exposing and developing the resist film to form a predetermined mask pattern, and selectively etching the substrate surface exposed from the mask pattern, a plurality of sliders corresponding to each thin film magnetic head pattern 2 are levitated. After forming the surface 4, the separation block substrate 3 is cut and separated into head slider units each having a slider air bearing surface 4 corresponding to the thin film magnetic head pattern 2, thereby forming a large number of thin film magnetic RAD sliders 5.
ところで上記した方形状の分離ブロック基板3のスライ
ダ浮上面4を形成すべき加工面3aにスピンコード法に
よりレジスト膜を形成する場合、第8図に示すように真
空チャック機構(図示省略)を備えたスピンホルダー1
1上の中心に、前記方形状の分離ブロック基板3をその
スライダ浮上面を形成すべき加工面3aを上向きにして
吸着固定した後、該面3a上に所定量のレジスト液を滴
下し、スピンホルダー11を矢印で示す回転方向Aに高
速回転させてレジスト液を中央部から周辺部へ遠心力に
より拡散させると共に、余剰のレジスト液を周辺部から
外部へ飛散させることによってレジスト膜を形成してい
る。By the way, when forming a resist film by the spin code method on the processing surface 3a on which the slider air bearing surface 4 of the rectangular separation block substrate 3 described above is to be formed, a vacuum chuck mechanism (not shown) is provided as shown in FIG. spin holder 1
1, the rectangular separation block substrate 3 is suctioned and fixed with the processed surface 3a, which is to form the slider flying surface, facing upward, and then a predetermined amount of resist liquid is dropped onto the surface 3a, and the substrate is spun. A resist film is formed by rotating the holder 11 at high speed in the rotational direction A indicated by the arrow to diffuse the resist solution from the center to the periphery by centrifugal force and scattering the excess resist solution from the periphery to the outside. There is.
ところがそのような平行な一対の辺が他の一対の辺より
も長い方形状の分離ブロック基板3の前記加工面3a上
にスピンコード法によりレジスト液を塗布する方法にあ
っては、第9図に示すように回転する分離ブロック基板
3の加工面3a上に塗布されるレジスト液はその表面張
力と遠心力とのバランスにより該加工面3a上の回転方
向へ〇縁端部に主に余剰のレジスト液が残留し、その領
域Bが厚(盛り上がった膜厚を有する不均一な膜厚のレ
ジスト膜6が形成される欠点があった。However, in such a method of applying a resist liquid onto the processing surface 3a of the rectangular separation block substrate 3 in which one pair of parallel sides is longer than the other pair of sides, the resist liquid is applied by a spin code method, as shown in FIG. As shown in the figure, the resist liquid applied onto the processed surface 3a of the rotating separation block substrate 3 moves in the rotating direction on the processed surface 3a due to the balance between its surface tension and centrifugal force. There was a drawback that the resist solution remained and a resist film 6 with an uneven thickness was formed in the region B (having a raised film thickness).
このため、かかるレジスト膜6を露光する際に、該レジ
スト膜6上にフォトマスクを密着配置することが困難と
なり、露光の解像度が低下すると共に、露光後のレジス
ト膜6のバターニング精度も著しく低下する問題があっ
た。For this reason, when exposing the resist film 6, it becomes difficult to place a photomask in close contact with the resist film 6, which reduces the resolution of exposure and significantly reduces the patterning accuracy of the resist film 6 after exposure. There was a problem with the decline.
本発明は上記した従来の問題点に鑑み、スピンコード法
によるレジスト液塗布時における方形状基板上の回転方
向の縁端部に余剰のレジスト液が残留し、その部分のレ
ジスト膜が厚く盛り上がる現象を無くして均一な膜厚の
レジスト膜を形成可能とした新規なレジスト膜の塗布方
法を提供することを目的とするものである。In view of the above-mentioned conventional problems, the present invention has been developed to address the phenomenon in which excess resist solution remains at the edges of a rectangular substrate in the rotational direction when applying a resist solution using a spin code method, and the resist film in that area thickens and swells. It is an object of the present invention to provide a novel method for coating a resist film, which makes it possible to form a resist film with a uniform thickness by eliminating the process.
本発明は上記した目的を達成するため、スピンホルダー
に設置した方形状の被処理基板上にレジスト液を滴下し
、該スピンホルダーを回転せしめてレジスト膜を塗布す
る方法において、上記方形状の被処理基板は、その一辺
の縁端部を傾斜状に切除し、前記スピンホルダー上の回
転中心と周縁部との間に前記傾斜した一辺を回転方向に
向けた状態に設置するように構成する。In order to achieve the above object, the present invention provides a method for applying a resist film by dropping a resist solution onto a rectangular substrate placed on a spin holder and rotating the spin holder. The processing substrate is configured such that the edge of one side thereof is cut out in an inclined shape, and the substrate is placed between the rotation center on the spin holder and the peripheral edge with the inclined one side facing in the direction of rotation.
本発明では、方形状の被処理基板の一辺の縁端部を傾斜
状に切除し、かかる被処理基板をスピンホルダー上の回
転中心と周縁部との間に、前記傾斜した一辺、即ち傾斜
面を該スピンホルダーの回転方向に向けた状態に設置し
た後、該被処理基板上にレジスト液を滴下してスピンホ
ルダーを回転させることにより、該レジスト液が回転遠
心力により被処理基板上の全面に広がって塗布され、余
剰のレジスト液は周縁部から外部へ飛散されるが、この
時、前記被処理基板の回転方向の一辺の縁端部へ流れて
きたレジスト液は傾斜面より外部へ飛散され、レジスト
液の塗布面より突出しない程度に僅かに残留した状態と
なる。In the present invention, the edge of one side of a rectangular substrate to be processed is cut out in an inclined shape, and the substrate to be processed is placed between the rotation center and the peripheral edge on the spin holder. After setting the spin holder in a direction facing the rotation direction of the spin holder, the resist solution is dropped onto the substrate to be processed and the spin holder is rotated, so that the resist solution spreads over the entire surface of the substrate due to rotational centrifugal force. The excess resist liquid is scattered from the periphery to the outside, but at this time, the resist liquid that has flowed to the edge of one side in the rotational direction of the substrate to be processed is scattered to the outside from the inclined surface. The resist liquid is left on the surface of the coating surface, and a small amount remains so as not to protrude from the surface on which the resist solution is applied.
即ち、前記被処理基板の傾斜面にはレジスト液が残留さ
れ難り、寧ろ外部へ飛散され易くなるので、この傾斜面
でのレジスト膜の盛り上がりは解消され、該被処理基板
上の傾斜面を除く全表面に均一な膜厚のレジスト膜を容
易に形成することができる。従って、その後の露光・現
像によるレジスト膜のパターニング精度も著しく向上す
る。That is, the resist liquid is difficult to remain on the sloped surface of the substrate to be processed, and is more likely to be scattered to the outside, so that the swelling of the resist film on the sloped surface is eliminated, and the sloped surface of the substrate to be processed is removed. A resist film having a uniform thickness can be easily formed on the entire surface except for the resist film. Therefore, the patterning accuracy of the resist film by subsequent exposure and development is also significantly improved.
以下図面を用いて本発明の実施例について詳細に説明す
る。Embodiments of the present invention will be described in detail below with reference to the drawings.
第1図は本発明に係るレジスト膜の塗布方法に用いる被
処理基板の一実施例を示す斜視図、第2図は本発明に係
るレジスト膜の塗布方法の一実施例を説明するための平
面図である。FIG. 1 is a perspective view showing an embodiment of a substrate to be processed used in the resist film coating method according to the present invention, and FIG. 2 is a plan view for explaining an embodiment of the resist film coating method according to the present invention. It is a diagram.
本実施例では第1図に示すようにレジスト膜を塗布すべ
き基板、例えば従来の如き平行な一対の辺が他の一対の
辺よりも長い薄膜磁気へ・ノドスライダとなる方形状の
被処理基板21の短い一辺の縁端部を15〜30度程度
の小さい角度で傾斜状に切除して傾斜面21aを形成し
、かかる被処理基板21を第2図に示すように真空チャ
ック機構(図示省略)を備えたスピンホルダー23上の
回転中心と周縁部との間に、前記傾斜面21aを該スピ
ンホルダー23の回転方向Aに向けた状態に設置する。In this embodiment, as shown in FIG. 1, a substrate to be coated with a resist film is used, for example, a rectangular substrate to be processed, which is used as a thin film magnetic nod slider, in which one pair of parallel sides is longer than the other pair of sides, as in the conventional case. The edge of one short side of the substrate 21 is cut off in an inclined shape at a small angle of about 15 to 30 degrees to form an inclined surface 21a. ) The inclined surface 21a is installed between the center of rotation and the peripheral edge of the spin holder 23 provided with the spin holder 23, with the inclined surface 21a facing in the rotation direction A of the spin holder 23.
その後、該被処理基板2工上に所定量のレジスト液を滴
下してスピンホルダー23を、例えば2000〜300
0rpmの回転速度で回転させ、レジスト液を該被処理
基板21上の表面の中央部から周辺部へ回転遠心力によ
り拡散させると共に、余剰のレジスト液を周辺部より外
部へ飛散させる。この時、前記被処理基板21の回転方
向へ向けた傾斜面21aへ流れてきたレジスト液は傾斜
面21aより外部へ飛散されてレジスト液の塗布面より
突出しない程度に僅かに残留した状態となり、この傾斜
面21aでのレジスト膜の盛り上がりが無くなる。Thereafter, a predetermined amount of resist liquid is dropped onto the substrate 2 to be processed, and the spin holder 23 is heated to a
It is rotated at a rotational speed of 0 rpm to diffuse the resist solution from the center to the periphery of the surface of the substrate 21 to be processed by rotational centrifugal force, and scatter the excess resist solution from the periphery to the outside. At this time, the resist liquid that has flowed to the inclined surface 21a facing the rotational direction of the substrate 21 to be processed is scattered to the outside from the inclined surface 21a, and remains slightly to the extent that it does not protrude from the surface on which the resist liquid is applied. The rise of the resist film on this inclined surface 21a is eliminated.
従って、第3図に示すように該被処理基板21上の傾斜
面21aを除く全表面に均一な膜厚のレジスト膜22を
容易に形成することが可能となる。Therefore, as shown in FIG. 3, it is possible to easily form a resist film 22 having a uniform thickness on the entire surface of the substrate 21 to be processed except for the inclined surface 21a.
なお、第2図に示すようにスピンホルダー23上の回転
中心と周縁部との間に、複数個の前記傾斜面21aを設
けた被処理基板21を、同様に傾斜面21aを該スピン
ホルダー23の回転方向Aに向けた状態に設置してレジ
スト液を回転塗布することにより、−度に複数個の被処
理基板21上に均一な膜厚のレジスト膜22を容易に形
成することができる。As shown in FIG. 2, the substrate 21 to be processed is provided with a plurality of inclined surfaces 21a between the rotation center and the peripheral edge of the spin holder 23. By installing the resist liquid in the rotational direction A and applying the resist solution by rotation, it is possible to easily form a resist film 22 with a uniform thickness on a plurality of substrates 21 to be processed at the same time.
更に第4図は本発明に係るレジスト膜の塗布方法に用い
る被処理基板の他の実施例を示す斜視図、第5図は本発
明に係るレジスト膜の塗布方法の他の実施例を説明する
ための平面図であり、第1図及び第2図と同等部分には
同一符号を付している。Furthermore, FIG. 4 is a perspective view showing another embodiment of the substrate to be processed used in the resist film coating method according to the present invention, and FIG. 5 explains another embodiment of the resist film coating method according to the present invention. 1, and parts equivalent to those in FIGS. 1 and 2 are given the same reference numerals.
これらの図で示す実施例が第1図及び第2図の実施例と
異なる点は、第4図に示すようにレジスト膜を塗布すべ
き基板、例えば平行な一対の辺が他の一対の辺よりも長
い方形状の被処理基板31の長い一辺の縁端部を15〜
30度程度の小さい角度で傾斜状に切除して傾斜面31
aを形成し、かかる被処理基板31の複数個を第5図に
示すように真空チャック機構(図示省略)を備えたスピ
ンホルダー23上の回転中心と周縁部との間に、前記傾
斜面31aを該スピンホルダー23の回転方向Aに向け
た状態で、一定間隔を隔てて放射状に設置したことてあ
る。The difference between the embodiment shown in these figures and the embodiment shown in FIGS. 1 and 2 is that, as shown in FIG. The edge of one long side of the rectangular substrate 31 that is longer than
Cut the inclined surface 31 at a small angle of about 30 degrees.
a, and as shown in FIG. 5, a plurality of substrates 31 to be processed are placed on the spin holder 23 equipped with a vacuum chuck mechanism (not shown) between the center of rotation and the peripheral edge thereof. The spin holder 23 is oriented in the rotational direction A, and the spin holders 23 are arranged radially at regular intervals.
そしてこれら複数個の被処理基板31上にそれぞれ所定
量のレジスト液を滴下してスピンホルダー23を、例え
ば2000〜3000rpmの回転速度で回転させてレ
ジスト液を該被処理基板31上の表面の中央部から周辺
部へ回転遠心力により拡散させると共に、余剰のレジス
ト液を周辺部より外部へ飛散させて塗布することにより
、該被処理基板31の回転方向へ向けた傾斜面31aへ
流れてきたレジスト液は該傾斜面31aより外部へ飛散
されてレジスト液の塗布面より突出しない程度に僅かに
残留した状態となり、前記した第2図及び第3図による
実施例と同様に、第6図に示すように該被処理基板31
上の傾斜面31aを除く全表面に均一な膜厚のレジスト
膜32を容易に形成することが可能となる。Then, a predetermined amount of resist liquid is dropped onto each of the plurality of substrates 31 to be processed, and the spin holder 23 is rotated at a rotation speed of, for example, 2000 to 3000 rpm, so that the resist liquid is applied to the center of the surface of the substrate 31 to be processed. By spreading the resist liquid from the peripheral part to the peripheral part by rotational centrifugal force and scattering the excess resist liquid from the peripheral part to the outside, the resist that has flowed to the inclined surface 31a facing the rotation direction of the substrate 31 to be processed is removed. The liquid is scattered to the outside from the inclined surface 31a and remains slightly to the extent that it does not protrude from the surface to which the resist liquid is applied, as shown in FIG. 6, similar to the embodiment shown in FIGS. 2 and 3 described above. The substrate to be processed 31
It becomes possible to easily form the resist film 32 with a uniform thickness on the entire surface except the upper inclined surface 31a.
従って、レジスト膜を塗布すべき被処理基板として、例
えば従来の如き平行な一対の辺が他の一対の辺よりも長
く、かつ複数の薄膜磁気ヘッドパターンが列設された第
7図(a)に示す方形状の分離ブロック基板3のスライ
ダ浮上面を形成すべき加工面3aにレジスト膜を形成す
る場合には、該加工面3aの前記薄膜磁気ヘッドパター
ンが列設された側とは反対側の縁端部をスライダ浮上時
の気流流入部として15〜30度程度の浅い角度で傾斜
状に切除して前記被処理基板31上の傾斜面31aと同
様な位置に傾斜面を形成しているので、この傾斜面を利
用して前記方形状の分離ブロック基板3のスライダ浮上
面を形成すべき加工面3aに第5図による実施例によっ
てレジスト液を塗布することにより均一な膜厚のレジス
ト膜を容易に形成することが可能となる。Therefore, as a substrate to be processed to which a resist film is applied, for example, as in the conventional case, a pair of parallel sides is longer than the other pair of sides, and a plurality of thin film magnetic head patterns are arranged in a row, as shown in FIG. 7(a). When forming a resist film on the processed surface 3a on which the slider air bearing surface of the rectangular separation block substrate 3 shown in FIG. The edge of the slider is cut off at a shallow angle of about 15 to 30 degrees to form an inclined surface at the same position as the inclined surface 31a on the substrate 31 to be processed, as an airflow inflow part when the slider floats. Therefore, by utilizing this inclined surface and applying a resist solution to the processed surface 3a of the rectangular separation block substrate 3 on which the slider air bearing surface is to be formed, according to the embodiment shown in FIG. 5, a resist film having a uniform thickness can be obtained. can be easily formed.
なお、以上の実施例ではスピンコード法により平行な一
対の辺が他の一対の辺よりも長い方形状の被処理基板上
にレジスト液を塗布する場合の例について説明したが、
本発明はこの例に限定されるものではなく、例えば四辺
の長さが等しい方形状の被処理基板上にレジスト液を塗
布する場合にも同様の効果が得られる。In addition, in the above embodiment, an example in which a resist solution is applied by a spin code method onto a rectangular substrate to be processed in which one pair of parallel sides is longer than the other pair of sides has been described.
The present invention is not limited to this example, and similar effects can be obtained, for example, when the resist solution is applied to a rectangular substrate to be processed whose four sides are equal in length.
また、以上の実施例では方形状の被処理基板の一辺の縁
端部を15〜30度程度の小さい角度で傾斜7て傾斜面
を形成しているが、この傾斜りに、前記縁端部を8面取
り、或いはCの面取り加工を施しても同様な作用効果が
得られる。Further, in the above embodiment, the edge of one side of the rectangular substrate to be processed is inclined 7 at a small angle of about 15 to 30 degrees to form an inclined surface. Similar effects can be obtained by chamfering 8 chamfers or C chamfering.
以上の説明から明らかなように、本発明に係るレジスト
膜の塗布方法によれば、スピンコード法により平行な一
対の辺が他の一対の辺よりも長い方形状の被処理基板上
、或いは四辺の長さが等しい方形状の被処理基板上に、
均一な膜厚のレジスト膜を容易に塗布形成することが可
能となる優れた利点を有し、またその後のレジスト膜の
露光・現像によるバターニング精度が向上する。As is clear from the above description, according to the resist film coating method according to the present invention, it is possible to apply a resist film on a substrate having a rectangular shape in which a pair of parallel sides are longer than the other pair of sides, or On a rectangular processing substrate with equal lengths,
This method has an excellent advantage of being able to easily form a resist film with a uniform thickness by coating, and improves the patterning accuracy of the subsequent exposure and development of the resist film.
従って、方形状の被処理基板上にレジスト膜を塗布形成
する工程、そのような工程を用いる磁気へラドスライダ
の製造に適用して極めて有利である。Therefore, the present invention is extremely advantageous when applied to the process of coating and forming a resist film on a rectangular substrate to be processed, and the manufacture of a magnetic rad slider using such a process.
第1図は本発明に係るレジスト膜の塗布方法に用いる被
処理基板の一実施例を示す斜
視図、
第2図は本発明に係るレジスト膜の塗布方法の一実施例
を説明するための平面図、
第3図は本発明の一実施例によるレジスト膜の塗布状態
を説明する斜視図、
第4図は本発明に係るレジスト膜の塗布方法に用いる被
処理基板の他の実施例を示す
斜視図、
第5図は本発明に係るレジスト膜の塗布方法の他の実施
例を説明するための平面図、
第6図は本発明の他の実施例によるレジスト膜の塗布状
態を説明する斜視図、
第7図(a)〜(C)はレジスト膜の塗布工程を用いた
薄膜磁気へラドスライダの製造工程の
一部を説明する概略斜視図、
第8図は従来のレジスト膜の塗布方法を説明するための
平面図、
第9図は従来のレジスト膜の塗布方法による問照点を説
明するための斜視図である。
第1図〜第6図において、
21.31は被処理基板、
21a、 31aは傾斜面、
22.32はレジスト膜、
23はスピンホルダー
をそれぞれ示す。
矛発鳴ぼZI−繞/lt)す珈セ禮差剥り−1j舶丑諺
5 図
榊心室オをeづt=rシU)スU馬を亭#む紅岬1】す
子翅図第 6 図
第
ワ
斗発研−ば7F絣哨髄方〕k−一笑於倒セ訝明を吊動の
第 2 図
H1aii/+−宍フ台4f’J l:j5 LYスL
#q;#f=g 態’=tlBEnt”H1ln第3図
第
図FIG. 1 is a perspective view showing an embodiment of a substrate to be processed used in the resist film coating method according to the present invention, and FIG. 2 is a plan view for explaining an embodiment of the resist film coating method according to the present invention. 3 is a perspective view illustrating a state of coating a resist film according to an embodiment of the present invention, and FIG. 4 is a perspective view illustrating another embodiment of a substrate to be processed used in the method of coating a resist film according to the present invention. FIG. 5 is a plan view for explaining another embodiment of the resist film coating method according to the present invention, and FIG. 6 is a perspective view for explaining a resist film coating state according to another embodiment of the present invention. , FIGS. 7(a) to (C) are schematic perspective views illustrating a part of the manufacturing process of a thin film magnetic radar slider using a resist film coating process, and FIG. 8 is a diagram illustrating a conventional resist film coating method. FIG. 9 is a perspective view for explaining the points of interest in the conventional resist film coating method. 1 to 6, 21.31 is a substrate to be processed, 21a and 31a are inclined surfaces, 22.32 is a resist film, and 23 is a spin holder. 5. Sakaki ventricle O = r shi U) Su U horse # Benmisaki 1] Suko wing Figure 6 Figure 6 Wato Hakken-Ba 7F Kasuri Sensei-kata] k-Ichisho 於Se question hanging 2nd Figure
#q; #f=g State'=tlBEnt"H1lnFigure 3Figure
Claims (1)
(21)上にレジスト液を滴下し、該スピンホルダー(
23)を回転せしめてレジスト膜を塗布する方法におい
て、 上記方形状の被処理基板(21)は、その一辺の縁端部
を傾斜状に切除し、前記スピンホルダー(23)上の回
転中心と周縁部との間に前記傾斜した一辺を回転方向に
向けた状態に設置することを特徴とするレジスト膜の塗
布方法。[Claims] A resist solution is dropped onto a rectangular substrate to be processed (21) placed on a spin holder (23), and the spin holder (23) is
In the method of applying a resist film by rotating the substrate (23), the rectangular substrate to be processed (21) has one edge thereof cut off in an inclined manner, and the center of rotation on the spin holder (23) is A method for applying a resist film, the method comprising: installing the resist film between the resist film and the peripheral edge so that the inclined side faces in the direction of rotation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33170889A JPH03190215A (en) | 1989-12-20 | 1989-12-20 | Coating method for resist film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33170889A JPH03190215A (en) | 1989-12-20 | 1989-12-20 | Coating method for resist film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03190215A true JPH03190215A (en) | 1991-08-20 |
Family
ID=18246701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33170889A Pending JPH03190215A (en) | 1989-12-20 | 1989-12-20 | Coating method for resist film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03190215A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037007A (en) * | 1994-08-05 | 2000-03-14 | Tdk Corporation | Method of forming a uniform photoresist film using gas flow |
US6094805A (en) * | 1995-12-28 | 2000-08-01 | Tdk Corporation | Method for manufacturing magnetic head |
WO2007069313A1 (en) * | 2005-12-14 | 2007-06-21 | Fujitsu Limited | Resist application method |
-
1989
- 1989-12-20 JP JP33170889A patent/JPH03190215A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037007A (en) * | 1994-08-05 | 2000-03-14 | Tdk Corporation | Method of forming a uniform photoresist film using gas flow |
US6094805A (en) * | 1995-12-28 | 2000-08-01 | Tdk Corporation | Method for manufacturing magnetic head |
WO2007069313A1 (en) * | 2005-12-14 | 2007-06-21 | Fujitsu Limited | Resist application method |
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