JPS6074624A - Formation of resist film - Google Patents
Formation of resist filmInfo
- Publication number
- JPS6074624A JPS6074624A JP18206583A JP18206583A JPS6074624A JP S6074624 A JPS6074624 A JP S6074624A JP 18206583 A JP18206583 A JP 18206583A JP 18206583 A JP18206583 A JP 18206583A JP S6074624 A JPS6074624 A JP S6074624A
- Authority
- JP
- Japan
- Prior art keywords
- spin
- resist
- substrate
- film
- striae
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Abstract
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は高粘度のレジストを脈理を少くしてスピンコー
ドする方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for spin-coding a high viscosity resist with reduced striae.
(b) 技術の背景
現在半導体結晶基板や誘電体結晶基板上に微細な電子回
路を形成する方法としてホトレジストを用いた写真蝕刻
技術(ホトリソグラフィ)が広く用いられている。(b) Background of the Technology Currently, photolithography using photoresist is widely used as a method for forming fine electronic circuits on semiconductor crystal substrates and dielectric crystal substrates.
この技術は微細パターンを形成せんとする基板上にホト
レジストを塗布して塗膜を作り、これにホトマスクを通
して紫外線を投影露光することによりホトレジストを部
分的に感光せしめ次に現像処理してエツチングすべき対
象パターンを露出せしめこれに化学エツチング或はイオ
ンエツチングのような物理的なエツチングを行うことに
より微細パターンを形成するものである。This technique involves applying photoresist onto a substrate on which a fine pattern is to be formed to form a coating film, projecting and exposing the photoresist to ultraviolet light through a photomask to partially expose the photoresist, and then developing and etching the film. A fine pattern is formed by exposing a target pattern and subjecting it to physical etching such as chemical etching or ion etching.
こ\でホトレジストを基板上に塗布する方法としてスピ
ンナ法、スプレィ法、浸漬法などがあるが均一で薄い塗
膜を作るにはスピンナ法が最も適している。There are several methods for applying photoresist onto a substrate, including the spinner method, spray method, and dipping method, but the spinner method is most suitable for creating a uniform and thin coating film.
本発明は高粘度のレジスト液を均一に塗布する方法に関
するものである。The present invention relates to a method for uniformly applying a high viscosity resist solution.
(e) 従来技術と問題点
第1図はレジスト膜を塗布した基板の平面図、第2図は
スピンナの断面図である。(e) Prior Art and Problems FIG. 1 is a plan view of a substrate coated with a resist film, and FIG. 2 is a sectional view of a spinner.
先にtkLしたように写真蝕刻技術は微細バターyを形
成する方法として総ゆる分野に用いられてい6 る。As previously mentioned, photo-etching technology is used in all fields as a method for forming fine butter.
こ\で透明石英或はガラスからなる基板にホトマスクを
形成する場合を例として説明すると次のようになる。The following is an example of the case where a photomask is formed on a substrate made of transparent quartz or glass.
この実施例において使用した基板1は厚さは約25〔■
〕で大きさは直径6〔インチ〕或は7〔インチ〕のディ
スク状のものまた一辺の長さが5〔インチ〕の方形のも
のなど各種のものがあり、この上に0.1〔μm〕の厚
さにクローム(cr )を蒸着し、このcr膜をエツチ
ングして高精度のパターンからなるホトマスクが作られ
る。すなわち第2図に示すように真壁チャック機構を備
えたスピンナ2のヘッド3の上に基板1を置き、回転軸
4の軸芯を貫いて設けられている減圧吸引機構により基
板1を吸着させた後基板1の中心部に液状のレジストを
滴下しモータ5により回転軸を高速回転させる。The thickness of the substrate 1 used in this example is approximately 25 [■
], and there are various sizes, such as disc-shaped ones with a diameter of 6 [inches] or 7 [inches], and rectangular ones with a side length of 5 [inches]. A photomask consisting of a highly accurate pattern is produced by depositing chromium (Cr) to a thickness of 100 mL and etching the Cr film. That is, as shown in FIG. 2, the substrate 1 was placed on the head 3 of a spinner 2 equipped with a Makabe chuck mechanism, and the substrate 1 was attracted by a vacuum suction mechanism provided through the axis of the rotating shaft 4. A liquid resist is dropped onto the center of the rear substrate 1, and the rotating shaft is rotated at high speed by the motor 5.
こ\で基板1が吸着しているヘッド3は基板1の大きさ
に比例して各種あり回転軸4に挿抜可能に形成されネジ
6により固定されている。またヘッド3の回転数は約1
200〜3000[rpm)の範囲で任意に設定できる
よう構成されている。The head 3 on which the substrate 1 is attracted is formed so as to be inserted into and removed from the rotating shaft 4, which has various types in proportion to the size of the substrate 1, and is fixed with screws 6. Also, the number of rotations of head 3 is approximately 1
It is configured so that it can be set arbitrarily within the range of 200 to 3000 [rpm].
次にレジスト液は種類および使用条件に応じて4〜70
〔cp〕と各種の粘度のものがあり、基板1の中心部に
滴下されたレジストは基板10回転に従って遠心力を受
け均等に拡がり不必要なレジストは飛散して均一な膜厚
のレジストが被検される。Next, the resist solution is 4 to 70% depending on the type and usage conditions.
There are [cp] and various viscosities, and the resist dropped onto the center of the substrate 1 is spread evenly by the centrifugal force as the substrate rotates 10 times, and unnecessary resist is scattered to form a resist with a uniform thickness. be inspected.
こ\で必要とするレジストの膜厚は5000〜1500
0[:A)であり、この厚さは使用目的により異りレジ
スト液の粘度と回転数に依存し次式で表わされる。The thickness of the resist required here is 5000 to 1500.
0[:A), and this thickness varies depending on the purpose of use and depends on the viscosity of the resist liquid and the rotation speed, and is expressed by the following equation.
t=KP2/rw ・・・・・・・・・・・・・・・・
・・・・・・・・・・(1)こ\で t・・・・・・
レジストの膜厚K・・・・・・定数
W・・・・・・回転数
P・・・・・・濃度
なお膜厚の均一性はスピンナの回転の立上りが大きい程
良好である。t=KP2/rw ・・・・・・・・・・・・・・・
・・・・・・・・・・・・(1) Here t・・・・・・
Resist film thickness K...Constant W...Rotation speed P...Concentration The uniformity of the film thickness is better as the rise of the rotation of the spinner is larger.
このようにしてスピンコードされる塗膜の膜厚は解像力
の点からは薄い方がよいが、薄いとピンホールの発生確
率が多くなり、1だ耐薬品性が悪くなる。捷たイオンエ
ツチングなどを行う場合にはパターンが作られる1でレ
ジストが残っていることが必要でこのため成る程度厚め
のレジスト膜が必要となる。The thinner the coating film spin-coded in this way is, the better from the viewpoint of resolution, but the thinner the coating, the more likely pinholes will occur, and the chemical resistance will be worse. When performing ion etching or the like, it is necessary that some resist remains in the pattern 1, and for this reason, a resist film that is thick enough is required.
然し高粘厩のレジスト液を用いる場合は第1図に示すよ
うにレジスト膜7に多数の脈理8を生じパターン相反を
著しく低下させる。However, when a highly viscous resist solution is used, a large number of striae 8 are produced in the resist film 7 as shown in FIG. 1, which significantly reduces pattern conflict.
すなわち脈理はピッチが1〔醪〕未満で1000(A)
程度の凹凸からなり中心より外側に向う模様で粘度の高
いレジスト液を用いる程脈理8は明瞭に現われパターン
形成の障害となっていた。In other words, striae have a pitch of less than 1 [moromi] and are 1000 (A).
The striae 8 appeared more clearly and became an obstacle to pattern formation when a resist liquid with a higher viscosity was used, and the pattern consisted of unevenness of some degree and moved outward from the center.
(d) 発明の目的
本発明は基板にスピンコードを行う際高粘度のレジスト
液を用いるに拘わらす脈理の発生が少い塗膜形成方法を
提供することを目的とする。(d) Object of the Invention It is an object of the present invention to provide a coating film forming method in which striae are less likely to occur even though a highly viscous resist solution is used when spin-coding a substrate.
(e) 発明の構成
本発明の目的はスピンコード法により被処理基鈑上にレ
ジスト膜を塗布する際回転速度が定速に達して設定時間
経過後回転方向を逆にして塗膜形成を行う方法をとるこ
とにより達成することができる。(e) Structure of the Invention The purpose of the present invention is to apply a resist film onto a substrate to be processed using a spin code method, and after the rotation speed reaches a constant speed and a set time has elapsed, the direction of rotation is reversed to form a coating film. This can be achieved by using a method.
(f) 発明の実施例
本発明はスピンコード法によるレジストの塗布は初めの
数秒間の塗布条件により決る点に着目してなされたもの
である。(f) Embodiments of the Invention The present invention has been developed by focusing on the fact that resist coating by the spin code method is determined by coating conditions for the first few seconds.
すなわち、スピンコード法により塗膜を形成する場合、
薄い塗膜を形成する際には経験上基板1を約15〔秒〕
はど回転させ一方厚い塗膜を作る場合は高粘度のレジス
ト液を用いて約90(秒〕に亘って回転さゼて作るのが
普通である。That is, when forming a coating film by the spin code method,
When forming a thin coating film, based on experience, the substrate 1 should be heated for about 15 seconds.
If a thick coating film is to be produced by rotating the resist, it is common to use a high viscosity resist solution and rotating the resist for about 90 seconds.
然し実験の結果塗膜の膜厚は初めの数秒で決るものであ
って、それ以後の回転は塗膜中の溶剤をピンホールを形
成することなく揮発させ乾燥させるにすぎないことを見
出した。However, as a result of experiments, it was found that the thickness of the coating film is determined within the first few seconds, and that subsequent rotation merely evaporates and dries the solvent in the coating film without forming pinholes.
そこで本発明はレジスト液を滴下し、基板1を回転し定
速に達して例えば5〔秒〕過ぎ膜厚が決った状態でモー
タ5を逆回転させる。この状態では塗膜7に脈理8を生
じているが未だ乾燥は始っていない。Therefore, in the present invention, the resist solution is dropped, the substrate 1 is rotated, and after reaching a constant speed, for example, 5 seconds have elapsed, the motor 5 is rotated in the reverse direction with the film thickness determined. In this state, striae 8 is formed in the coating film 7, but drying has not yet begun.
なお市販のスピンナは回転の立上りを良くするためモー
タ5はヘッド3を直接駆動ゼずクラッチを通して高速(
ロ)転している回転軸に瞬時にチャック部分を結合する
構造がとられているのでヘッド3の逆回転もそれ程無理
なく行うことができ回転方向に彎曲して生じていた脈理
8は逆回転により減殺されて消滅が始まり同時に乾燥が
進行して脈理が殆んど無い状態で固まることになる。In addition, in commercially available spinners, in order to improve the start-up of rotation, the motor 5 does not directly drive the head 3, but drives the head 3 at high speed (
b) Since the structure is such that the chuck part is instantly connected to the rotating shaft, the head 3 can be rotated in the opposite direction without much difficulty, and the striae 8 that was caused by curving in the direction of rotation can be reversed. It is reduced by rotation and begins to disappear, and at the same time, drying progresses and it hardens with almost no striae.
こ\でヘッド3を逆転する最適のタイミングはレジスト
液の粘度と回転数により決り一定ではないが、厚さ1〔
μm〕のポジレジストを形成する実施例においては約5
〔秒〕が適当であった。The optimal timing for reversing the head 3 depends on the viscosity of the resist liquid and the number of revolutions, but it is not constant when the head 3 is reversed.
In the example of forming a positive resist of about 5 μm]
[Seconds] was appropriate.
このようにレジスト液が遠心力により周囲に拡散しその
膜厚が決った状態で反転させれば脈理8はその形成条件
が逆となるので崩れ、逆方向に脈理を生ずる暇なく溶剤
が揮発し流動性を失うこと\なる。In this way, if the resist solution is diffused into the surrounding area by centrifugal force and reversed with a fixed film thickness, striae 8 will collapse because the formation conditions will be reversed, and the solvent will disappear without any time to form striae in the opposite direction. It evaporates and loses liquidity.
(g) 発明の効果
本発明はスピンコード法でレジスト膜を形成する場合は
多数の脈理を生じこの凹凸によりパターン精度が損われ
るのを改善するためになされたもので基板を逆回転させ
る。本発明の実施により高粘度のレンス+−aを使用す
る場合でも脈理の発生を殆んど無くすることができる。(g) Effects of the Invention The present invention has been made in order to improve the problem that when a resist film is formed by the spin code method, a large number of striae are generated and pattern accuracy is impaired due to these irregularities, and the substrate is rotated in the opposite direction. By carrying out the present invention, it is possible to almost eliminate the occurrence of striae even when using a highly viscous lens +-a.
第1図はレジスト膜を塗布した基板の平面図また第2図
はスピンナの断面図である。
図において、1は基板、2はスピンナ、3はヘッド、5
はモータ、7はレジスト膜、8は脈理。FIG. 1 is a plan view of a substrate coated with a resist film, and FIG. 2 is a sectional view of a spinner. In the figure, 1 is a substrate, 2 is a spinner, 3 is a head, and 5
is the motor, 7 is the resist film, and 8 is the striae.
Claims (1)
する際回転速度が定速に達して設定時間経過後回転方向
を逆にして塗膜形成を行うことを特徴とするレジスト膜
の形成方法。A method for forming a resist film, which comprises applying a resist film onto a substrate to be processed using a spin code method, and forming a coating film by rotating the rotation direction in the opposite direction after a set time has elapsed after the rotation speed reaches a constant speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18206583A JPS6074624A (en) | 1983-09-30 | 1983-09-30 | Formation of resist film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18206583A JPS6074624A (en) | 1983-09-30 | 1983-09-30 | Formation of resist film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6074624A true JPS6074624A (en) | 1985-04-26 |
Family
ID=16111729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18206583A Pending JPS6074624A (en) | 1983-09-30 | 1983-09-30 | Formation of resist film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6074624A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62121675A (en) * | 1985-11-19 | 1987-06-02 | Hoya Corp | Method for applying resist |
JPH02270415A (en) * | 1989-04-12 | 1990-11-05 | Tdk Corp | Piezoelectric vibrator and frequency adjustment method |
US4971931A (en) * | 1990-02-12 | 1990-11-20 | Eastman Kodak Company | Diffuser features for spin-coated films |
EP0653683A1 (en) * | 1993-11-12 | 1995-05-17 | Semiconductor Systems, Inc. | Oscillatory chuck method and apparatus for coating flat substrates |
JP2015000356A (en) * | 2013-06-13 | 2015-01-05 | シャープ株式会社 | Coating film forming method |
-
1983
- 1983-09-30 JP JP18206583A patent/JPS6074624A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62121675A (en) * | 1985-11-19 | 1987-06-02 | Hoya Corp | Method for applying resist |
JPH02270415A (en) * | 1989-04-12 | 1990-11-05 | Tdk Corp | Piezoelectric vibrator and frequency adjustment method |
US4971931A (en) * | 1990-02-12 | 1990-11-20 | Eastman Kodak Company | Diffuser features for spin-coated films |
EP0653683A1 (en) * | 1993-11-12 | 1995-05-17 | Semiconductor Systems, Inc. | Oscillatory chuck method and apparatus for coating flat substrates |
US5798140A (en) * | 1993-11-12 | 1998-08-25 | Semiconductor Systems, Inc. | Oscillatory chuck method and apparatus for coating flat substrates |
JP2015000356A (en) * | 2013-06-13 | 2015-01-05 | シャープ株式会社 | Coating film forming method |
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