JPH0318734B2 - - Google Patents

Info

Publication number
JPH0318734B2
JPH0318734B2 JP60063556A JP6355685A JPH0318734B2 JP H0318734 B2 JPH0318734 B2 JP H0318734B2 JP 60063556 A JP60063556 A JP 60063556A JP 6355685 A JP6355685 A JP 6355685A JP H0318734 B2 JPH0318734 B2 JP H0318734B2
Authority
JP
Japan
Prior art keywords
crucible
heater
heater support
heat shield
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60063556A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61224311A (ja
Inventor
Norio Kanai
Naoyuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6355685A priority Critical patent/JPS61224311A/ja
Publication of JPS61224311A publication Critical patent/JPS61224311A/ja
Publication of JPH0318734B2 publication Critical patent/JPH0318734B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6355685A 1985-03-29 1985-03-29 分子線源 Granted JPS61224311A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6355685A JPS61224311A (ja) 1985-03-29 1985-03-29 分子線源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6355685A JPS61224311A (ja) 1985-03-29 1985-03-29 分子線源

Publications (2)

Publication Number Publication Date
JPS61224311A JPS61224311A (ja) 1986-10-06
JPH0318734B2 true JPH0318734B2 (en, 2012) 1991-03-13

Family

ID=13232607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6355685A Granted JPS61224311A (ja) 1985-03-29 1985-03-29 分子線源

Country Status (1)

Country Link
JP (1) JPS61224311A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433587B2 (ja) * 2019-06-20 2024-02-20 Ｏｒｂｒａｙ株式会社 ヒーターサポート及びヒーター装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121831U (ja) * 1983-02-04 1984-08-16 日本真空技術株式会社 分子線エピタキシ−用蒸発源熱シ−ルド

Also Published As

Publication number Publication date
JPS61224311A (ja) 1986-10-06

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